CH379641A - Halbleitervorrichtung mit mindestens einem als Emitter wirksamen pn-Übergang - Google Patents
Halbleitervorrichtung mit mindestens einem als Emitter wirksamen pn-ÜbergangInfo
- Publication number
- CH379641A CH379641A CH7763459A CH7763459A CH379641A CH 379641 A CH379641 A CH 379641A CH 7763459 A CH7763459 A CH 7763459A CH 7763459 A CH7763459 A CH 7763459A CH 379641 A CH379641 A CH 379641A
- Authority
- CH
- Switzerland
- Prior art keywords
- emitter
- junction
- acts
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES59705A DE1090329B (de) | 1958-09-05 | 1958-09-05 | Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH379641A true CH379641A (de) | 1964-07-15 |
Family
ID=7493517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH7763459A CH379641A (de) | 1958-09-05 | 1959-09-01 | Halbleitervorrichtung mit mindestens einem als Emitter wirksamen pn-Übergang |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH379641A (fi) |
| DE (1) | DE1090329B (fi) |
| FR (1) | FR1232137A (fi) |
| GB (1) | GB906036A (fi) |
| NL (1) | NL242787A (fi) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404304A (en) * | 1964-04-30 | 1968-10-01 | Texas Instruments Inc | Semiconductor junction device for generating optical radiation |
| US4007474A (en) * | 1972-12-29 | 1977-02-08 | Sony Corporation | Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion |
| US4032958A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Semiconductor device |
| US4032957A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Semiconductor device |
| JPS5147584B2 (fi) * | 1972-12-29 | 1976-12-15 | ||
| US4032956A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Transistor circuit |
| US4027324A (en) * | 1972-12-29 | 1977-05-31 | Sony Corporation | Bidirectional transistor |
| GB1503570A (en) * | 1974-03-28 | 1978-03-15 | Sony Corp | Semiconductor devices |
| JPS5754969B2 (fi) * | 1974-04-04 | 1982-11-20 | ||
| GB1502165A (en) * | 1974-04-10 | 1978-02-22 | Sony Corp | Semiconductor devices |
| JPS5753672B2 (fi) * | 1974-04-10 | 1982-11-13 | ||
| JPS57658B2 (fi) * | 1974-04-16 | 1982-01-07 | ||
| JPS5711147B2 (fi) * | 1974-05-07 | 1982-03-02 | ||
| JPS5712303B2 (fi) * | 1974-05-09 | 1982-03-10 | ||
| JPS5648983B2 (fi) * | 1974-05-10 | 1981-11-19 | ||
| JPS5646267B2 (fi) * | 1974-05-10 | 1981-10-31 | ||
| US4750025A (en) * | 1981-12-04 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Depletion stop transistor |
| GB8817459D0 (en) * | 1988-07-22 | 1988-08-24 | Gen Electric | Semiconductor devices |
| FR2640813A1 (fr) * | 1988-12-16 | 1990-06-22 | Radiotechnique Compelec | Circuit integre presentant un transistor vertical |
| FR2640814B1 (fr) * | 1988-12-16 | 1991-03-15 | Radiotechnique Compelec | Circuit integre presentant un transistor vertical |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE489418A (fi) * | 1948-06-26 | |||
| BE509110A (fi) * | 1951-05-05 | |||
| NL96809C (fi) * | 1954-07-21 | |||
| NL202409A (fi) * | 1954-11-30 | |||
| NL103476C (fi) * | 1955-04-21 |
-
0
- NL NL242787D patent/NL242787A/xx unknown
-
1958
- 1958-09-05 DE DES59705A patent/DE1090329B/de active Pending
-
1959
- 1959-08-08 FR FR802428A patent/FR1232137A/fr not_active Expired
- 1959-09-01 CH CH7763459A patent/CH379641A/de unknown
- 1959-09-04 GB GB3027859A patent/GB906036A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1232137A (fr) | 1960-10-05 |
| GB906036A (en) | 1962-09-19 |
| DE1090329B (de) | 1960-10-06 |
| NL242787A (fi) |
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