FR1232137A - Dispositif à semi-conducteurs, à émetteur de rendement élevé - Google Patents

Dispositif à semi-conducteurs, à émetteur de rendement élevé

Info

Publication number
FR1232137A
FR1232137A FR802428A FR802428A FR1232137A FR 1232137 A FR1232137 A FR 1232137A FR 802428 A FR802428 A FR 802428A FR 802428 A FR802428 A FR 802428A FR 1232137 A FR1232137 A FR 1232137A
Authority
FR
France
Prior art keywords
semiconductor device
high efficiency
emitter semiconductor
efficiency emitter
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR802428A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1232137A publication Critical patent/FR1232137A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
FR802428A 1958-09-05 1959-08-08 Dispositif à semi-conducteurs, à émetteur de rendement élevé Expired FR1232137A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES59705A DE1090329B (de) 1958-09-05 1958-09-05 Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor

Publications (1)

Publication Number Publication Date
FR1232137A true FR1232137A (fr) 1960-10-05

Family

ID=7493517

Family Applications (1)

Application Number Title Priority Date Filing Date
FR802428A Expired FR1232137A (fr) 1958-09-05 1959-08-08 Dispositif à semi-conducteurs, à émetteur de rendement élevé

Country Status (5)

Country Link
CH (1) CH379641A (fr)
DE (1) DE1090329B (fr)
FR (1) FR1232137A (fr)
GB (1) GB906036A (fr)
NL (1) NL242787A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
JPS5147584B2 (fr) * 1972-12-29 1976-12-15
US4027324A (en) * 1972-12-29 1977-05-31 Sony Corporation Bidirectional transistor
US4032957A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
DE2513458A1 (de) * 1974-03-28 1975-10-02 Sony Corp Halbleiterbauelement
JPS5754969B2 (fr) * 1974-04-04 1982-11-20
JPS5753672B2 (fr) * 1974-04-10 1982-11-13
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
JPS57658B2 (fr) * 1974-04-16 1982-01-07
JPS5711147B2 (fr) * 1974-05-07 1982-03-02
JPS5712303B2 (fr) * 1974-05-09 1982-03-10
JPS5648983B2 (fr) * 1974-05-10 1981-11-19
JPS5646267B2 (fr) * 1974-05-10 1981-10-31
GB8817459D0 (en) * 1988-07-22 1988-08-24 Gen Electric Semiconductor devices
FR2640814B1 (fr) * 1988-12-16 1991-03-15 Radiotechnique Compelec Circuit integre presentant un transistor vertical
FR2640813A1 (fr) * 1988-12-16 1990-06-22 Radiotechnique Compelec Circuit integre presentant un transistor vertical

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (fr) * 1948-06-26
BE509110A (fr) * 1951-05-05
NL96809C (fr) * 1954-07-21
NL202409A (fr) * 1954-11-30
NL103476C (fr) * 1955-04-21

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor

Also Published As

Publication number Publication date
GB906036A (en) 1962-09-19
NL242787A (fr)
CH379641A (de) 1964-07-15
DE1090329B (de) 1960-10-06

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