DE1090329B - Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor - Google Patents
Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere TransistorInfo
- Publication number
- DE1090329B DE1090329B DES59705A DES0059705A DE1090329B DE 1090329 B DE1090329 B DE 1090329B DE S59705 A DES59705 A DE S59705A DE S0059705 A DES0059705 A DE S0059705A DE 1090329 B DE1090329 B DE 1090329B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- junction
- concentration
- emitter
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000009792 diffusion process Methods 0.000 description 13
- 238000005215 recombination Methods 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 230000007704 transition Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL242787D NL242787A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1958-09-05 | ||
DES59705A DE1090329B (de) | 1958-09-05 | 1958-09-05 | Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor |
FR802428A FR1232137A (fr) | 1958-09-05 | 1959-08-08 | Dispositif à semi-conducteurs, à émetteur de rendement élevé |
CH7763459A CH379641A (de) | 1958-09-05 | 1959-09-01 | Halbleitervorrichtung mit mindestens einem als Emitter wirksamen pn-Übergang |
GB30278/59A GB906036A (en) | 1958-09-05 | 1959-09-04 | Improvements in or relating to semi-conductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES59705A DE1090329B (de) | 1958-09-05 | 1958-09-05 | Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1090329B true DE1090329B (de) | 1960-10-06 |
Family
ID=7493517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES59705A Pending DE1090329B (de) | 1958-09-05 | 1958-09-05 | Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor |
Country Status (5)
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2364753A1 (de) * | 1972-12-29 | 1974-07-18 | Sony Corp | Halbleitervorrichtung |
DE2513458A1 (de) * | 1974-03-28 | 1975-10-02 | Sony Corp | Halbleiterbauelement |
DE2515577A1 (de) * | 1974-04-10 | 1975-10-23 | Sony Corp | Schaltungsanordnung mit einem transistor hoher eingangsimpedanz |
AT374052B (de) * | 1974-04-04 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
AT374053B (de) * | 1974-04-10 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
FR2640813A1 (fr) * | 1988-12-16 | 1990-06-22 | Radiotechnique Compelec | Circuit integre presentant un transistor vertical |
FR2640814A1 (fr) * | 1988-12-16 | 1990-06-22 | Radiotechnique Compelec | Circuit integre presentant un transistor vertical |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3404304A (en) * | 1964-04-30 | 1968-10-01 | Texas Instruments Inc | Semiconductor junction device for generating optical radiation |
US4032958A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Semiconductor device |
US4032956A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Transistor circuit |
US4027324A (en) * | 1972-12-29 | 1977-05-31 | Sony Corporation | Bidirectional transistor |
US4032957A (en) * | 1972-12-29 | 1977-06-28 | Sony Corporation | Semiconductor device |
US4007474A (en) * | 1972-12-29 | 1977-02-08 | Sony Corporation | Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion |
JPS57658B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-04-16 | 1982-01-07 | ||
JPS5711147B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-05-07 | 1982-03-02 | ||
JPS5712303B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-05-09 | 1982-03-10 | ||
JPS5648983B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-05-10 | 1981-11-19 | ||
JPS5646267B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-05-10 | 1981-10-31 | ||
US4750025A (en) * | 1981-12-04 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Depletion stop transistor |
GB8817459D0 (en) * | 1988-07-22 | 1988-08-24 | Gen Electric | Semiconductor devices |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE509910A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1951-05-05 | |||
DE814487C (de) * | 1948-06-26 | 1951-09-24 | Western Electric Co | Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie |
FR1137424A (fr) * | 1954-07-21 | 1957-05-28 | Philips Nv | Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron |
FR1143171A (fr) * | 1954-11-30 | 1957-09-27 | Philips Nv | Diode semi-conductrice |
FR1153884A (fr) * | 1955-04-21 | 1958-03-28 | Philips Nv | Système d'électrodes à couche d'arrêt, en particulier transistron ou diode à cristal |
-
0
- NL NL242787D patent/NL242787A/xx unknown
-
1958
- 1958-09-05 DE DES59705A patent/DE1090329B/de active Pending
-
1959
- 1959-08-08 FR FR802428A patent/FR1232137A/fr not_active Expired
- 1959-09-01 CH CH7763459A patent/CH379641A/de unknown
- 1959-09-04 GB GB30278/59A patent/GB906036A/en not_active Expired
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE814487C (de) * | 1948-06-26 | 1951-09-24 | Western Electric Co | Feste, leitende elektrische Vorrichtung unter Verwendung von Halbleiterschichten zur Steuerung elektrischer Energie |
BE509910A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1951-05-05 | |||
FR1137424A (fr) * | 1954-07-21 | 1957-05-28 | Philips Nv | Système d'électrodes à couche d'arrêt, en particulier diode à cristal ou transistron |
FR1143171A (fr) * | 1954-11-30 | 1957-09-27 | Philips Nv | Diode semi-conductrice |
FR1153884A (fr) * | 1955-04-21 | 1958-03-28 | Philips Nv | Système d'électrodes à couche d'arrêt, en particulier transistron ou diode à cristal |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2364753A1 (de) * | 1972-12-29 | 1974-07-18 | Sony Corp | Halbleitervorrichtung |
DE2513458A1 (de) * | 1974-03-28 | 1975-10-02 | Sony Corp | Halbleiterbauelement |
AT374052B (de) * | 1974-04-04 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
DE2515577A1 (de) * | 1974-04-10 | 1975-10-23 | Sony Corp | Schaltungsanordnung mit einem transistor hoher eingangsimpedanz |
AT374053B (de) * | 1974-04-10 | 1984-03-12 | Sony Corp | Differenzverstaerker mit steuerbarer verstaerkung |
FR2640813A1 (fr) * | 1988-12-16 | 1990-06-22 | Radiotechnique Compelec | Circuit integre presentant un transistor vertical |
FR2640814A1 (fr) * | 1988-12-16 | 1990-06-22 | Radiotechnique Compelec | Circuit integre presentant un transistor vertical |
WO1990007194A1 (en) * | 1988-12-16 | 1990-06-28 | N.V. Philips' Gloeilampenfabrieken | Integrated circuit comprising a vertical transistor |
WO1990007193A1 (en) * | 1988-12-16 | 1990-06-28 | N.V. Philips' Gloeilampenfabrieken | Semiconductor device comprising an integrated circuit having a vertical transistor |
US5089873A (en) * | 1988-12-16 | 1992-02-18 | U.S. Philips Corp. | Integrated circuit having a vertical transistor |
Also Published As
Publication number | Publication date |
---|---|
NL242787A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
CH379641A (de) | 1964-07-15 |
GB906036A (en) | 1962-09-19 |
FR1232137A (fr) | 1960-10-05 |
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