DE1066549B - Verfahren zur Herstellung von chemischen Verbindungen von hohem Reinheitsgrad - Google Patents
Verfahren zur Herstellung von chemischen Verbindungen von hohem ReinheitsgradInfo
- Publication number
- DE1066549B DE1066549B DENDAT1066549D DE1066549DA DE1066549B DE 1066549 B DE1066549 B DE 1066549B DE NDAT1066549 D DENDAT1066549 D DE NDAT1066549D DE 1066549D A DE1066549D A DE 1066549DA DE 1066549 B DE1066549 B DE 1066549B
- Authority
- DE
- Germany
- Prior art keywords
- reaction chamber
- production
- volatile
- hydrogen
- chemical compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 10
- 150000001875 compounds Chemical class 0.000 title claims description 8
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- 239000003039 volatile agent Substances 0.000 claims description 3
- 239000008246 gaseous mixture Substances 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 239000001294 propane Substances 0.000 description 6
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000005049 silicon tetrachloride Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
- C01B21/0763—Preparation from titanium, zirconium or hafnium halides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
- C01B21/0643—Preparation from boron halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR892132X | 1957-07-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1066549B true DE1066549B (de) | 1959-10-08 |
Family
ID=9389425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DENDAT1066549D Pending DE1066549B (de) | 1957-07-17 | Verfahren zur Herstellung von chemischen Verbindungen von hohem Reinheitsgrad |
Country Status (4)
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB928853A (en) * | 1958-07-14 | 1963-06-19 | Berghaus Elektrophysik Anst | Method of producing elements from their halides |
| US3152056A (en) * | 1960-05-05 | 1964-10-06 | Berghaus Bernhard | Method of producing nu-h compounds, particularly hydrazine compounds |
| US3232706A (en) * | 1961-05-01 | 1966-02-01 | Carborundum Co | Method of making submicron size nitrides and carbides |
| US3257296A (en) * | 1964-05-08 | 1966-06-21 | Berghaus Bernhard | Process for obtaining metals by fusion electrolysis |
| US3451840A (en) * | 1965-10-06 | 1969-06-24 | Us Air Force | Wire coated with boron nitride and boron |
| JPS4945079B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-01-07 | 1974-12-02 | ||
| US4546372A (en) * | 1983-04-11 | 1985-10-08 | United Technologies Corporation | Phosphorous-nitrogen based glasses for the passivation of III-V semiconductor materials |
| JPS59206042A (ja) * | 1983-05-07 | 1984-11-21 | Sumitomo Electric Ind Ltd | 微粉末の製造方法及び製造装置 |
| US4443489A (en) * | 1983-05-10 | 1984-04-17 | United Technologies Corporation | Method for the formation of phosphorous-nitrogen based glasses useful for the passivation of III-V semiconductor materials |
| GB8809651D0 (en) * | 1988-04-23 | 1988-05-25 | Tioxide Group Plc | Nitrogen compounds |
| GB8913106D0 (en) * | 1989-06-07 | 1989-07-26 | Tioxide Group Plc | Production of nitrogen compounds |
| GB9306802D0 (en) * | 1993-04-01 | 1993-05-26 | Tioxide Specialties Ltd | Process for the production of silicon nitride |
| EP0910468A1 (en) * | 1996-07-11 | 1999-04-28 | University of Cincinnati | Electrically assisted synthesis of particles and films with precisely controlled characteristics |
| GB0005756D0 (en) * | 2000-03-11 | 2000-05-03 | Banham Patent Locks Ltd | Lock |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US789440A (en) * | 1905-02-25 | 1905-05-09 | Frederick Darlington | Process of treating phosphate-rock and producing phosphorus chlorids and alkali-metal cyanids. |
| US1576275A (en) * | 1924-03-13 | 1926-03-09 | Carborundum Co | Zirconium carbide |
| US2089966A (en) * | 1931-12-09 | 1937-08-17 | Kassner Ernst Eduard Wilheim | Process for altering the energy content of dipolar substances |
| US2257177A (en) * | 1937-07-17 | 1941-09-30 | Standard Oil Dev Co | Polymerization by means of a high frequency electric discharge |
-
0
- BE BE569429D patent/BE569429A/xx unknown
- DE DENDAT1066549D patent/DE1066549B/de active Pending
-
1958
- 1958-07-15 US US748677A patent/US2952599A/en not_active Expired - Lifetime
- 1958-07-17 GB GB23008/58A patent/GB892132A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2952599A (en) | 1960-09-13 |
| GB892132A (en) | 1962-03-21 |
| BE569429A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1066549B (de) | Verfahren zur Herstellung von chemischen Verbindungen von hohem Reinheitsgrad | |
| EP0799212A1 (de) | Verfahren zur herstellung von hochreinem melamin | |
| EP1250305A2 (de) | Abwasserreinigung beim verfahren zur herstellung von wasserfreier ameisensäure | |
| DE102018001359A1 (de) | Reinigungssystem für Trichlorsilan und Silicumkristall | |
| DE2814800A1 (de) | Verfahren zur herstellung von guanidin | |
| DE1518505A1 (de) | Verfahren zur Abtrennung von Kohlendioxyd und Ammoniak aus ihren Gemischen mit Wasser | |
| DE1012138B (de) | Verfahren und Vorrichtung zum Beizen von Metallen, insbesondere Eisen und Stahl, unter gleichzeitiger Rueckgewinnung der Beizsaeure | |
| DE1047180B (de) | Verfahren zur Herstellung von sehr reinem kristallinem Siliciumcarbid | |
| DE1100023B (de) | Verfahren und Vorrichtung zur Aktivierung von zur Herstellung von organischen Aluminiumverbindungen dienendem metallischem Aluminium | |
| DE10314492B4 (de) | Verfahren zur Herstellung einer wässrigen Lösung von Hydroxylamin | |
| DE69530446T2 (de) | Ozonisator und seine Verwendung | |
| DE19725851A1 (de) | Verfahren zur Herstellung hochreiner, wässriger Hydroxylaminlösungen | |
| DE1567575B2 (de) | Verfahren zur Herstellung von Chlor | |
| DE1134973B (de) | Verfahren zur Herstellung von hochreinen Siliciumhalogeniden | |
| DE1082883B (de) | Verfahren zur Herstellung von hochreinem Bor, Silicium oder Germanium bzw. Gemischendieser Substanzen | |
| DE484055C (de) | Verfluessigung und Trennung von Gasgemischen bei tiefer Temperatur | |
| DE1072815B (de) | Verfahren zur Herstellung von Metal'len und anderen chemischen Elementen metallischen Charakters von hohem Reinheitsgrad | |
| DE1124507B (de) | Verfahren zur Herstellung von reinem adipinsaurem Hexamethylendiamin | |
| DD234410A1 (de) | Verfahren zur hochreinigung leichtfluechtiger substanzen | |
| DE556140C (de) | Thermische Zerlegung von Aluminiumnitrat | |
| DE440607C (de) | Verfahren und Vorrichtung zur synthetischen Herstellung von Ammoniak | |
| AT229876B (de) | Verfahren zur Herstellung von sehr reinem Melamin | |
| DE2614546A1 (de) | Verfahren zur verminderung des chloratgehaltes einer waessrigen, chlorathaltigen alkalimetall-hydroxidloesung | |
| DE971577C (de) | Verfahren zum Nitrieren von Toluol in einem Arbeitsgang zu Di- oder Trinitrotoluol | |
| DE937824C (de) | Verfahren zum Reinigen von Edelgasen von Stickstoffspuren |