DE1039045B - Verfahren zur Herstellung von Siliciumcarbidkristallen durch Sublimation - Google Patents

Verfahren zur Herstellung von Siliciumcarbidkristallen durch Sublimation

Info

Publication number
DE1039045B
DE1039045B DEN10366A DEN0010366A DE1039045B DE 1039045 B DE1039045 B DE 1039045B DE N10366 A DEN10366 A DE N10366A DE N0010366 A DEN0010366 A DE N0010366A DE 1039045 B DE1039045 B DE 1039045B
Authority
DE
Germany
Prior art keywords
sublimation
silicon carbide
crystals
protective gas
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN10366A
Other languages
German (de)
English (en)
Inventor
Jan Anthony Lely
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1039045B publication Critical patent/DE1039045B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
DEN10366A 1954-03-19 1955-03-17 Verfahren zur Herstellung von Siliciumcarbidkristallen durch Sublimation Pending DE1039045B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL346864X 1954-03-19

Publications (1)

Publication Number Publication Date
DE1039045B true DE1039045B (de) 1958-09-18

Family

ID=19784917

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN10366A Pending DE1039045B (de) 1954-03-19 1955-03-17 Verfahren zur Herstellung von Siliciumcarbidkristallen durch Sublimation

Country Status (6)

Country Link
US (1) US2854364A (en:Method)
CH (1) CH346864A (en:Method)
DE (1) DE1039045B (en:Method)
FR (1) FR1138273A (en:Method)
GB (1) GB772691A (en:Method)
NL (1) NL87348C (en:Method)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL108185C (en:Method) * 1958-08-27
NL244520A (en:Method) * 1958-10-23
US2996783A (en) * 1958-11-24 1961-08-22 Horizons Inc Method of shaping sic by vaporization and condensation
US3025192A (en) * 1959-01-02 1962-03-13 Norton Co Silicon carbide crystals and processes and furnaces for making them
NL246971A (en:Method) * 1959-01-02 1900-01-01
NL249549A (en:Method) * 1959-03-27 1900-01-01
US3154439A (en) * 1959-04-09 1964-10-27 Sprague Electric Co Method for forming a protective skin for transistor
US3082126A (en) * 1959-06-19 1963-03-19 Westinghouse Electric Corp Producing diffused junctions in silicon carbide
US3129125A (en) * 1959-07-01 1964-04-14 Westinghouse Electric Corp Preparation of silicon carbide materials
US2996415A (en) * 1959-10-05 1961-08-15 Transitron Electronic Corp Method of purifying silicon carbide
US3053635A (en) * 1960-09-26 1962-09-11 Clevite Corp Method of growing silicon carbide crystals
NL267879A (en:Method) * 1960-09-26
US3166380A (en) * 1961-05-01 1965-01-19 Carborundum Co Process for the production of submicron silicon carbide
BE624959A (en:Method) * 1961-11-20
US3161473A (en) * 1962-06-06 1964-12-15 Corning Glass Works Method of making beta-silicon carbide fibers
US3236780A (en) * 1962-12-19 1966-02-22 Gen Electric Luminescent silicon carbide and preparation thereof
NL293275A (en:Method) * 1963-05-27
US3236673A (en) * 1963-06-03 1966-02-22 Ionics Colloidal silicon carbide and the method of making the same
US3275415A (en) * 1964-02-27 1966-09-27 Westinghouse Electric Corp Apparatus for and preparation of silicon carbide single crystals
GB1052587A (en:Method) * 1964-06-30
US3470107A (en) * 1965-10-15 1969-09-30 Gen Electric Silicon carbide phosphors
US3962406A (en) * 1967-11-25 1976-06-08 U.S. Philips Corporation Method of manufacturing silicon carbide crystals
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
GB2061002B (en) * 1979-10-11 1983-10-19 Matsushita Electric Industrial Co Ltd Method for making a carbide thin film thermistor
US4536379A (en) * 1983-06-02 1985-08-20 Graphite Sales, Inc. Production of silicon carbide
US4556436A (en) * 1984-08-22 1985-12-03 The United States Of America As Represented By The Secretary Of The Navy Method of preparing single crystalline cubic silicon carbide layers
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4912063A (en) * 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
US4990295A (en) * 1988-10-06 1991-02-05 Benchmark Structural Ceramics Corporation Process for making a silicon carbide composition
WO1990003956A1 (en) * 1988-10-06 1990-04-19 Benchmark Structural Ceramics Corporation Process for making a silicon carbide composition
US4957885A (en) * 1988-10-06 1990-09-18 Benchmark Structural Ceramics Corporation Process for making a silicon carbide composition
US4948761A (en) * 1988-12-02 1990-08-14 Benchmark Structural Ceramics Corporation Process for making a silicon carbide composition
US5032332A (en) * 1988-10-06 1991-07-16 Benchmark Structural Ceramics Corporation Process for making a silicon carbide whisker reinforced alumina ceramic composite precursor
US5071797A (en) * 1988-10-06 1991-12-10 Benchmark Structural Ceramics Corporation Titanium carbide/alumina composite material
US5143668A (en) * 1988-10-06 1992-09-01 Benchmark Structural Ceramics Corporation Process for making a reaction-sintered carbide-based composite body with controlled combustion synthesis
US5006290A (en) * 1988-10-06 1991-04-09 Benchmark Structural Ceramics Corporation Process for making a silicon carbide whisker reinforced alumina ceramic composite precursor
US5211801A (en) * 1989-06-20 1993-05-18 Siemens Aktiengesellschaft Method for manufacturing single-crystal silicon carbide
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
CA2113336C (en) * 1993-01-25 2001-10-23 David J. Larkin Compound semi-conductors and controlled doping thereof
US5441011A (en) * 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
DE4310744A1 (de) * 1993-04-01 1994-10-06 Siemens Ag Vorrichtung zum Herstellen von SiC-Einkristallen
US5510630A (en) * 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
DE4427857C2 (de) * 1994-08-05 2001-04-12 Siemens Ag Verfahren zum Herstellen eines mit Aluminium dotierten Siliciumcarbid-Einkristalls
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5989340A (en) * 1995-11-14 1999-11-23 Siemens Aktiengesellschaft Process and device for sublimation growing of silicon carbide monocrystals
US5746827A (en) * 1995-12-27 1998-05-05 Northrop Grumman Corporation Method of producing large diameter silicon carbide crystals
RU2094547C1 (ru) * 1996-01-22 1997-10-27 Юрий Александрович Водаков Сублимационный способ выращивания монокристаллов карбида кремния и источник карбида кремния для осуществления способа
US6547877B2 (en) 1996-01-22 2003-04-15 The Fox Group, Inc. Tantalum crucible fabrication and treatment
US6562130B2 (en) 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
ATE217368T1 (de) 1997-01-22 2002-05-15 Yury Alexandrovich Vodakov Züchtung von siliziumkarbid einkristallen
US6537371B2 (en) 1997-01-22 2003-03-25 The Fox Group, Inc. Niobium crucible fabrication and treatment
US5937317A (en) * 1997-05-08 1999-08-10 Northrop Grumman Corporation Method of making a low resistivity silicon carbide boule
US6562131B2 (en) 1999-07-20 2003-05-13 The Fox Group, Inc. Method for growing single crystal silicon carbide
US7220313B2 (en) * 2003-07-28 2007-05-22 Cree, Inc. Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US20040144301A1 (en) * 2003-01-24 2004-07-29 Neudeck Philip G. Method for growth of bulk crystals by vapor phase epitaxy
US7056383B2 (en) * 2004-02-13 2006-06-06 The Fox Group, Inc. Tantalum based crucible
US7294324B2 (en) 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7422634B2 (en) 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
US20070110657A1 (en) * 2005-11-14 2007-05-17 Hunter Charles E Unseeded silicon carbide single crystals
US7449065B1 (en) 2006-12-02 2008-11-11 Ohio Aerospace Institute Method for the growth of large low-defect single crystals
US8409351B2 (en) * 2007-08-08 2013-04-02 Sic Systems, Inc. Production of bulk silicon carbide with hot-filament chemical vapor deposition
KR101566020B1 (ko) 2007-12-12 2015-11-04 다우 코닝 코포레이션 승화 및 응결 공정을 통한 대형의 균일한 실리콘 탄화물 주괴의 제조방법
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
WO2015012954A1 (en) * 2013-07-26 2015-01-29 Ii-Vi Incorporated Method for synthesizing ultrahigh-purity silicon carbide
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
WO2016126554A1 (en) 2015-02-05 2016-08-11 Dow Corning Corporation Furnace for seeded sublimation of wide band gap crystals
CN114000197B (zh) 2015-09-24 2025-01-10 帕里杜斯有限公司 气相沉积装置以及使用高纯度聚合物衍生的碳化硅的技术
JP7113658B2 (ja) * 2018-05-11 2022-08-05 昭和電工株式会社 遮蔽部材及びそれを備えた単結晶成長装置
JP7268299B2 (ja) * 2018-08-08 2023-05-08 株式会社レゾナック 遮蔽部材及び単結晶成長装置
US11066305B1 (en) 2020-11-13 2021-07-20 ionobell Inc Porous silicon manufactured from fumed silica
EP4347540A1 (en) 2021-05-25 2024-04-10 Ionobell, Inc. Silicon material and method of manufacture
DE102021123991B4 (de) 2021-09-16 2024-05-29 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
WO2023064395A1 (en) 2021-10-12 2023-04-20 Ionobell, Inc Silicon battery and method for assembly
WO2023114211A2 (en) 2021-12-13 2023-06-22 Ionobell, Inc. Porous silicon material and method of manufacture
US12057568B2 (en) 2022-07-08 2024-08-06 Ionobell, Inc. Electrode slurry and method of manufacture
DE102022123747A1 (de) 2022-09-16 2024-03-21 Pva Tepla Ag PVT-Verfahren und Apparatur zum prozesssicheren Herstellen von Einkristallen
DE102022123757B4 (de) 2022-09-16 2024-05-29 Pva Tepla Ag Apparatur, Tragrahmen für eine Apparatur und PVT-Verfahren zum prozesssicheren Herstellen von Einkristallen
KR20250068647A (ko) 2022-09-16 2025-05-16 페파우아 테플라 아게 단결정의 공정 안전 생산을 위한 pvt 방법 및 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2178773A (en) * 1935-11-13 1939-11-07 Carborundum Co Silicon carbide and manufacture thereof
US2188693A (en) * 1938-07-26 1940-01-30 Carborundum Co Manufacture of silicon carbide resistors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US913324A (en) * 1907-02-13 1909-02-23 Carborundum Co Manufacture of silicon carbid.
US992698A (en) * 1910-07-28 1911-05-16 Carborundum Co Method for the production of dense compacted silicon carbid.
US2005956A (en) * 1931-12-02 1935-06-25 Norton Co Method of making abrasive metal carbides and an apparatus therefor
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2178773A (en) * 1935-11-13 1939-11-07 Carborundum Co Silicon carbide and manufacture thereof
US2188693A (en) * 1938-07-26 1940-01-30 Carborundum Co Manufacture of silicon carbide resistors

Also Published As

Publication number Publication date
GB772691A (en) 1957-04-17
US2854364A (en) 1958-09-30
CH346864A (de) 1960-06-15
NL87348C (en:Method) 1900-01-01
FR1138273A (fr) 1957-06-12

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