DE1036392B - Transistor mit Mehrstoffemitter - Google Patents
Transistor mit MehrstoffemitterInfo
- Publication number
- DE1036392B DE1036392B DEN10247A DEN0010247A DE1036392B DE 1036392 B DE1036392 B DE 1036392B DE N10247 A DEN10247 A DE N10247A DE N0010247 A DEN0010247 A DE N0010247A DE 1036392 B DE1036392 B DE 1036392B
- Authority
- DE
- Germany
- Prior art keywords
- transistor according
- alloy
- emitter
- collector
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title 1
- 239000000956 alloy Substances 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 26
- 229910052732 germanium Inorganic materials 0.000 claims description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C11/00—Alloys based on lead
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL337946X | 1954-02-27 | ||
| NL240654X | 1954-06-24 | ||
| NL140954X | 1954-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1036392B true DE1036392B (de) | 1958-08-14 |
Family
ID=27351258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN10247A Pending DE1036392B (de) | 1954-02-27 | 1955-02-23 | Transistor mit Mehrstoffemitter |
Country Status (7)
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1128047B (de) * | 1959-11-30 | 1962-04-19 | Akad Wissenschaften Ddr | Verfahren zum Herstellen von sperrschicht-freien Kontakten auf einem Kristall aus einer halbleitenden A B-Verbindung durch Aufdampfen von Aluminium |
| DE1129623B (de) * | 1959-11-27 | 1962-05-17 | Gen Electric Co Ltd | Verfahren zum Herstellen von Flaechentransistoren |
| DE1163977B (de) * | 1962-05-15 | 1964-02-27 | Intermetall | Sperrfreier Kontakt an einer Zone des Halbleiterkoerpers eines Halbleiterbauelementes |
| DE1178520B (de) * | 1961-08-24 | 1964-09-24 | Philips Patentverwaltung | Legierungsverfahren zur Herstellung von Halbleiteranordnungen |
| DE1178948B (de) * | 1960-10-20 | 1964-10-01 | Philips Patentverwaltung | Verfahren zur Herstellung einer Halbleiter-anordnung mit Breitbandelektrode |
| DE1182354B (de) * | 1958-09-02 | 1964-11-26 | Texas Instruments Inc | Transistor |
| DE1214326B (de) * | 1961-10-31 | 1966-04-14 | Philips Nv | Verfahren zur Herstellung eines Halbleiterbauelementes mit Tunneleffekt |
| DE1237690B (de) * | 1961-02-16 | 1967-03-30 | Gen Motors Corp | Verfahren zur Herstellung eines Halbleiterbauelementes |
| DE1248167B (de) * | 1959-07-24 | 1967-08-24 | Philco Fort Corp Eine Ges Nach | Verfahren zur Herstellung eines Halbleiterbauelements durch Einlegieren einer Elektrode in einen Halbleiterkoerper aus Germanium |
| DE1292258B (de) * | 1962-09-21 | 1969-04-10 | Siemens Ag | Verfahren zum Herstellen eines hoeheren Dotierungsgrades in Halbleitermaterialien, als ihn die Loeslichkeit eines Fremdstoffes im Halbleitermaterial zulaesst |
| DE1295697B (de) * | 1962-05-23 | 1969-05-22 | Walter Brandt Gmbh | Halbleiterbauelement und Verfahren zu seiner Herstellung |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE575988A (US07534539-20090519-C00280.png) * | 1958-02-22 | |||
| NL251987A (US07534539-20090519-C00280.png) * | 1960-05-25 | |||
| GB985864A (en) * | 1960-08-05 | 1965-03-10 | Telefunken Patent | A semiconductor device |
| US3240980A (en) * | 1961-01-03 | 1966-03-15 | Sylvania Electric Prod | Spark gap socket |
| US3258371A (en) * | 1962-02-01 | 1966-06-28 | Semiconductor Res Found | Silicon semiconductor device for high frequency, and method of its manufacture |
| US3307088A (en) * | 1962-03-13 | 1967-02-28 | Fujikawa Kyoichi | Silver-lead alloy contacts containing dopants for semiconductors |
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
| GB1074283A (en) * | 1963-01-09 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| NL290930A (US07534539-20090519-C00280.png) * | 1963-03-29 | |||
| US3255056A (en) * | 1963-05-20 | 1966-06-07 | Rca Corp | Method of forming semiconductor junction |
| US3354365A (en) * | 1964-10-29 | 1967-11-21 | Texas Instruments Inc | Alloy contact containing aluminum and tin |
| US3416979A (en) * | 1964-08-31 | 1968-12-17 | Matsushita Electric Ind Co Ltd | Method of making a variable capacitance silicon diode with hyper abrupt junction |
| US3515953A (en) * | 1967-03-21 | 1970-06-02 | Rca Corp | Adaptive diode having mobile doping impurities |
| US4891284A (en) * | 1988-09-27 | 1990-01-02 | International Lead Zinc Research Organization, Inc. | Lead-aluminum material |
| US5248476A (en) * | 1992-04-30 | 1993-09-28 | The Indium Corporation Of America | Fusible alloy containing bismuth, indium, lead, tin and gallium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2589658A (en) * | 1948-06-17 | 1952-03-18 | Bell Telephone Labor Inc | Semiconductor amplifier and electrode structures therefor |
| US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material |
| US2697269A (en) * | 1950-07-24 | 1954-12-21 | Bell Telephone Labor Inc | Method of making semiconductor translating devices |
| US2836522A (en) * | 1952-11-15 | 1958-05-27 | Rca Corp | Junction type semiconductor device and method of its manufacture |
| BE525428A (US07534539-20090519-C00280.png) * | 1952-12-30 | |||
| US2719253A (en) * | 1953-02-11 | 1955-09-27 | Bradley Mining Company | Nonlinear conduction elements |
| US2781480A (en) * | 1953-07-31 | 1957-02-12 | Rca Corp | Semiconductor rectifiers |
| US2802159A (en) * | 1953-10-20 | 1957-08-06 | Hughes Aircraft Co | Junction-type semiconductor devices |
| US2784300A (en) * | 1954-12-29 | 1957-03-05 | Bell Telephone Labor Inc | Method of fabricating an electrical connection |
-
0
- NL NL98710D patent/NL98710C/xx active
- NL NL98717D patent/NL98717C/xx active
- NL NL94467D patent/NL94467C/xx active
- NL NLAANVRAGE7704331,A patent/NL185470B/xx unknown
- NL NL98718D patent/NL98718C/xx active
- NL NL98719D patent/NL98719C/xx active
- NL NL190762D patent/NL190762A/xx unknown
- BE BE536020D patent/BE536020A/xx unknown
- NL NL190761D patent/NL190761A/xx unknown
- NL NLAANVRAGE8801151,A patent/NL188679B/xx unknown
- NL NL190760D patent/NL190760A/xx unknown
-
1955
- 1955-02-21 US US489644A patent/US3078397A/en not_active Expired - Lifetime
- 1955-02-23 DE DEN10247A patent/DE1036392B/de active Pending
- 1955-02-24 GB GB5558/55A patent/GB803017A/en not_active Expired
- 1955-02-25 FR FR1128423D patent/FR1128423A/fr not_active Expired
- 1955-02-25 CH CH337946D patent/CH337946A/de unknown
- 1955-03-23 US US496278A patent/US3078195A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1182354B (de) * | 1958-09-02 | 1964-11-26 | Texas Instruments Inc | Transistor |
| DE1248167B (de) * | 1959-07-24 | 1967-08-24 | Philco Fort Corp Eine Ges Nach | Verfahren zur Herstellung eines Halbleiterbauelements durch Einlegieren einer Elektrode in einen Halbleiterkoerper aus Germanium |
| DE1129623B (de) * | 1959-11-27 | 1962-05-17 | Gen Electric Co Ltd | Verfahren zum Herstellen von Flaechentransistoren |
| DE1128047B (de) * | 1959-11-30 | 1962-04-19 | Akad Wissenschaften Ddr | Verfahren zum Herstellen von sperrschicht-freien Kontakten auf einem Kristall aus einer halbleitenden A B-Verbindung durch Aufdampfen von Aluminium |
| DE1178948B (de) * | 1960-10-20 | 1964-10-01 | Philips Patentverwaltung | Verfahren zur Herstellung einer Halbleiter-anordnung mit Breitbandelektrode |
| DE1237690B (de) * | 1961-02-16 | 1967-03-30 | Gen Motors Corp | Verfahren zur Herstellung eines Halbleiterbauelementes |
| DE1178520B (de) * | 1961-08-24 | 1964-09-24 | Philips Patentverwaltung | Legierungsverfahren zur Herstellung von Halbleiteranordnungen |
| DE1214326B (de) * | 1961-10-31 | 1966-04-14 | Philips Nv | Verfahren zur Herstellung eines Halbleiterbauelementes mit Tunneleffekt |
| DE1163977B (de) * | 1962-05-15 | 1964-02-27 | Intermetall | Sperrfreier Kontakt an einer Zone des Halbleiterkoerpers eines Halbleiterbauelementes |
| DE1295697B (de) * | 1962-05-23 | 1969-05-22 | Walter Brandt Gmbh | Halbleiterbauelement und Verfahren zu seiner Herstellung |
| DE1292258B (de) * | 1962-09-21 | 1969-04-10 | Siemens Ag | Verfahren zum Herstellen eines hoeheren Dotierungsgrades in Halbleitermaterialien, als ihn die Loeslichkeit eines Fremdstoffes im Halbleitermaterial zulaesst |
Also Published As
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