NL188679B - Inrichting voor het monteren van een stuurhefboom voor een gasveer. - Google Patents

Inrichting voor het monteren van een stuurhefboom voor een gasveer.

Info

Publication number
NL188679B
NL188679B NLAANVRAGE8801151,A NL188679DA NL188679B NL 188679 B NL188679 B NL 188679B NL 188679D A NL188679D A NL 188679DA NL 188679 B NL188679 B NL 188679B
Authority
NL
Netherlands
Prior art keywords
mounting
gas spring
steering lever
steering
lever
Prior art date
Application number
NLAANVRAGE8801151,A
Other languages
English (en)
Original Assignee
Okamura Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL188679B publication Critical patent/NL188679B/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C11/00—Alloys based on lead
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
NLAANVRAGE8801151,A 1954-02-27 Inrichting voor het monteren van een stuurhefboom voor een gasveer. NL188679B (nl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL337946X 1954-02-27
NL240654X 1954-06-24
NL140954X 1954-09-14

Publications (1)

Publication Number Publication Date
NL188679B true NL188679B (nl)

Family

ID=27351258

Family Applications (10)

Application Number Title Priority Date Filing Date
NL98710D NL98710C (nl) 1954-02-27
NLAANVRAGE8801151,A NL188679B (nl) 1954-02-27 Inrichting voor het monteren van een stuurhefboom voor een gasveer.
NL98717D NL98717C (nl) 1954-02-27
NL190760D NL190760A (nl) 1954-02-27
NL94467D NL94467C (nl) 1954-02-27
NL190762D NL190762A (nl) 1954-02-27
NL98719D NL98719C (nl) 1954-02-27
NL98718D NL98718C (nl) 1954-02-27
NL190761D NL190761A (nl) 1954-02-27
NLAANVRAGE7704331,A NL185470B (nl) 1954-02-27 Inrichting voor drukdetectie en besturing van een veiligheidskleplichaam.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL98710D NL98710C (nl) 1954-02-27

Family Applications After (8)

Application Number Title Priority Date Filing Date
NL98717D NL98717C (nl) 1954-02-27
NL190760D NL190760A (nl) 1954-02-27
NL94467D NL94467C (nl) 1954-02-27
NL190762D NL190762A (nl) 1954-02-27
NL98719D NL98719C (nl) 1954-02-27
NL98718D NL98718C (nl) 1954-02-27
NL190761D NL190761A (nl) 1954-02-27
NLAANVRAGE7704331,A NL185470B (nl) 1954-02-27 Inrichting voor drukdetectie en besturing van een veiligheidskleplichaam.

Country Status (7)

Country Link
US (2) US3078397A (nl)
BE (1) BE536020A (nl)
CH (1) CH337946A (nl)
DE (1) DE1036392B (nl)
FR (1) FR1128423A (nl)
GB (1) GB803017A (nl)
NL (10) NL185470B (nl)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131155C (nl) * 1958-02-22
NL242895A (nl) * 1958-09-02
NL252974A (nl) * 1959-07-24
NL258171A (nl) * 1959-11-27
DE1128047B (de) * 1959-11-30 1962-04-19 Akad Wissenschaften Ddr Verfahren zum Herstellen von sperrschicht-freien Kontakten auf einem Kristall aus einer halbleitenden A B-Verbindung durch Aufdampfen von Aluminium
NL251987A (nl) * 1960-05-25
GB985864A (en) * 1960-08-05 1965-03-10 Telefunken Patent A semiconductor device
NL270339A (nl) * 1960-10-20
US3240980A (en) * 1961-01-03 1966-03-15 Sylvania Electric Prod Spark gap socket
NL274847A (nl) * 1961-02-16
DE1178520B (de) * 1961-08-24 1964-09-24 Philips Patentverwaltung Legierungsverfahren zur Herstellung von Halbleiteranordnungen
BE624228A (nl) * 1961-10-31
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
DE1163977B (de) * 1962-05-15 1964-02-27 Intermetall Sperrfreier Kontakt an einer Zone des Halbleiterkoerpers eines Halbleiterbauelementes
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
DE1292258B (de) * 1962-09-21 1969-04-10 Siemens Ag Verfahren zum Herstellen eines hoeheren Dotierungsgrades in Halbleitermaterialien, als ihn die Loeslichkeit eines Fremdstoffes im Halbleitermaterial zulaesst
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
GB1074284A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
NL298354A (nl) * 1963-03-29
US3255056A (en) * 1963-05-20 1966-06-07 Rca Corp Method of forming semiconductor junction
US3354365A (en) * 1964-10-29 1967-11-21 Texas Instruments Inc Alloy contact containing aluminum and tin
US3416979A (en) * 1964-08-31 1968-12-17 Matsushita Electric Ind Co Ltd Method of making a variable capacitance silicon diode with hyper abrupt junction
US3515953A (en) * 1967-03-21 1970-06-02 Rca Corp Adaptive diode having mobile doping impurities
US4891284A (en) * 1988-09-27 1990-01-02 International Lead Zinc Research Organization, Inc. Lead-aluminum material
US5248476A (en) * 1992-04-30 1993-09-28 The Indium Corporation Of America Fusible alloy containing bismuth, indium, lead, tin and gallium

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2589658A (en) * 1948-06-17 1952-03-18 Bell Telephone Labor Inc Semiconductor amplifier and electrode structures therefor
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2697269A (en) * 1950-07-24 1954-12-21 Bell Telephone Labor Inc Method of making semiconductor translating devices
US2836522A (en) * 1952-11-15 1958-05-27 Rca Corp Junction type semiconductor device and method of its manufacture
BE525428A (nl) * 1952-12-30
US2719253A (en) * 1953-02-11 1955-09-27 Bradley Mining Company Nonlinear conduction elements
US2781480A (en) * 1953-07-31 1957-02-12 Rca Corp Semiconductor rectifiers
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
DE1012696B (de) * 1954-07-06 1957-07-25 Siemens Ag Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges
US2784300A (en) * 1954-12-29 1957-03-05 Bell Telephone Labor Inc Method of fabricating an electrical connection

Also Published As

Publication number Publication date
BE536020A (nl)
NL98718C (nl)
NL190762A (nl)
US3078195A (en) 1963-02-19
GB803017A (en) 1958-10-15
CH337946A (de) 1959-04-30
NL190761A (nl)
NL98717C (nl)
NL190760A (nl)
NL98710C (nl)
NL94467C (nl)
US3078397A (en) 1963-02-19
FR1128423A (fr) 1957-01-04
NL185470B (nl)
DE1036392B (de) 1958-08-14
NL98719C (nl)

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