DE10315036B4 - Bildgebungsanordnung - Google Patents

Bildgebungsanordnung Download PDF

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Publication number
DE10315036B4
DE10315036B4 DE10315036.6A DE10315036A DE10315036B4 DE 10315036 B4 DE10315036 B4 DE 10315036B4 DE 10315036 A DE10315036 A DE 10315036A DE 10315036 B4 DE10315036 B4 DE 10315036B4
Authority
DE
Germany
Prior art keywords
layer
capacitor
tft
dielectric
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10315036.6A
Other languages
German (de)
English (en)
Other versions
DE10315036A1 (de
Inventor
Ji-Ung Lee
George Edward Possin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE10315036A1 publication Critical patent/DE10315036A1/de
Application granted granted Critical
Publication of DE10315036B4 publication Critical patent/DE10315036B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
DE10315036.6A 2002-04-03 2003-04-02 Bildgebungsanordnung Expired - Fee Related DE10315036B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/115829 2002-04-03
US10/115,829 US6559506B1 (en) 2002-04-03 2002-04-03 Imaging array and methods for fabricating same

Publications (2)

Publication Number Publication Date
DE10315036A1 DE10315036A1 (de) 2003-11-13
DE10315036B4 true DE10315036B4 (de) 2014-11-20

Family

ID=22363640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10315036.6A Expired - Fee Related DE10315036B4 (de) 2002-04-03 2003-04-02 Bildgebungsanordnung

Country Status (4)

Country Link
US (1) US6559506B1 (https=)
JP (1) JP4559036B2 (https=)
DE (1) DE10315036B4 (https=)
FR (1) FR2838240B1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740884B2 (en) * 2002-04-03 2004-05-25 General Electric Company Imaging array and methods for fabricating same
US6777685B2 (en) * 2002-04-03 2004-08-17 General Electric Company Imaging array and methods for fabricating same
US7145152B2 (en) * 2003-10-14 2006-12-05 General Electric Company Storage capacitor design for a solid state imager
US20080210939A1 (en) * 2005-02-28 2008-09-04 Jean-Baptiste Chevrier Method for Fabricating an Image Sensor Device with Reduced Pixel Cross-Talk
US8053777B2 (en) * 2005-03-31 2011-11-08 General Electric Company Thin film transistors for imaging system and method of making the same
TWI355106B (en) * 2007-05-07 2011-12-21 Chunghwa Picture Tubes Ltd Organic photodetector and fabricating method of or
JP5286691B2 (ja) * 2007-05-14 2013-09-11 三菱電機株式会社 フォトセンサー
TWI347682B (en) * 2007-09-28 2011-08-21 Prime View Int Co Ltd A photo sensor and a method for manufacturing thereof
US9318614B2 (en) * 2012-08-02 2016-04-19 Cbrite Inc. Self-aligned metal oxide TFT with reduced number of masks and with reduced power consumption
US20130240875A1 (en) * 2012-03-14 2013-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN102800750B (zh) * 2012-07-26 2015-07-01 北京京东方光电科技有限公司 一种传感器的制造方法
WO2016010292A1 (en) * 2014-07-15 2016-01-21 Vieworks Co., Ltd. Radiation detector
CN109300919B (zh) * 2018-10-15 2020-09-29 上海天马微电子有限公司 Micro LED显示基板及其制作方法、显示装置

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JPH10163463A (ja) * 1996-12-02 1998-06-19 Hosiden Corp Ｔｆｔアレイ基板とその製法
JP2000241557A (ja) * 1999-02-24 2000-09-08 Toshiba Corp Ｘ線撮像装置
US20020020875A1 (en) * 2000-05-12 2002-02-21 Tatsuya Arao Semiconductor device and manufacturing method therefor

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US4725890A (en) 1986-07-15 1988-02-16 Ovonic Imaging Systems, Inc. Flexible array of photosensitive elements
US4739414A (en) 1986-07-15 1988-04-19 Ovonic Imaging Systems, Inc. Large area array of thin film photosensitive elements for image detection
US4889983A (en) 1987-11-24 1989-12-26 Mitsubishi Denki Kabushiki Kaisha Image sensor and production method thereof
JPH0423470A (ja) 1990-05-18 1992-01-27 Fuji Xerox Co Ltd イメージセンサ
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5399884A (en) * 1993-11-10 1995-03-21 General Electric Company Radiation imager with single passivation dielectric for transistor and diode
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
US5587591A (en) 1993-12-29 1996-12-24 General Electric Company Solid state fluoroscopic radiation imager with thin film transistor addressable array
US5435608A (en) 1994-06-17 1995-07-25 General Electric Company Radiation imager with common passivation dielectric for gate electrode and photosensor
CA2193649C (en) 1994-07-27 2003-01-21 Zhong Shou Huang Radiation imaging panel
US5532180A (en) 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
US5614727A (en) 1995-06-06 1997-03-25 International Business Machines Corporation Thin film diode having large current capability with low turn-on voltages for integrated devices
US5631473A (en) 1995-06-21 1997-05-20 General Electric Company Solid state array with supplemental dielectric layer crossover structure
US6133614A (en) 1995-08-28 2000-10-17 Canon Kabushiki Kaisha Apparatus for detecting radiation and method for manufacturing such apparatus
US5610404A (en) 1995-09-05 1997-03-11 General Electric Company Flat panel imaging device with ground plane electrode
US5610403A (en) 1995-09-05 1997-03-11 General Electric Company Solid state radiation imager with gate electrode plane shield wires
US5648654A (en) 1995-12-21 1997-07-15 General Electric Company Flat panel imaging device with patterned common electrode
US5777355A (en) 1996-12-23 1998-07-07 General Electric Company Radiation imager with discontinuous dielectric
US5920070A (en) 1996-11-27 1999-07-06 General Electric Company Solid state area x-ray detector with adjustable bias
US5736732A (en) 1996-12-23 1998-04-07 General Electric Company Induced charge prevention in semiconductor imaging devices
US5838054A (en) 1996-12-23 1998-11-17 General Electric Company Contact pads for radiation imagers
US6307214B1 (en) * 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
US6167110A (en) 1997-11-03 2000-12-26 General Electric Company High voltage x-ray and conventional radiography imaging apparatus and method
US6031234A (en) 1997-12-08 2000-02-29 General Electric Company High resolution radiation imager
US6025599A (en) 1997-12-09 2000-02-15 Direct Radiography Corp. Image capture element
TWI226470B (en) * 1998-01-19 2005-01-11 Hitachi Ltd LCD device
US6243441B1 (en) 1999-07-13 2001-06-05 Edge Medical Devices Active matrix detector for X-ray imaging
US6307322B1 (en) * 1999-12-28 2001-10-23 Sarnoff Corporation Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage
JP2002033331A (ja) * 2000-05-12 2002-01-31 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10163463A (ja) * 1996-12-02 1998-06-19 Hosiden Corp Ｔｆｔアレイ基板とその製法
JP2000241557A (ja) * 1999-02-24 2000-09-08 Toshiba Corp Ｘ線撮像装置
US20020020875A1 (en) * 2000-05-12 2002-02-21 Tatsuya Arao Semiconductor device and manufacturing method therefor

Also Published As

Publication number Publication date
FR2838240B1 (fr) 2007-05-11
DE10315036A1 (de) 2003-11-13
FR2838240A1 (fr) 2003-10-10
JP4559036B2 (ja) 2010-10-06
US6559506B1 (en) 2003-05-06
JP2004006781A (ja) 2004-01-08

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20141101