DE10303942B4 - Herstellungsverfahren für eine PN-Sperrschicht-Diodenvorrichtung, und eine PN-Sperrschicht-Diodenvorrichtung - Google Patents

Herstellungsverfahren für eine PN-Sperrschicht-Diodenvorrichtung, und eine PN-Sperrschicht-Diodenvorrichtung Download PDF

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Publication number
DE10303942B4
DE10303942B4 DE10303942A DE10303942A DE10303942B4 DE 10303942 B4 DE10303942 B4 DE 10303942B4 DE 10303942 A DE10303942 A DE 10303942A DE 10303942 A DE10303942 A DE 10303942A DE 10303942 B4 DE10303942 B4 DE 10303942B4
Authority
DE
Germany
Prior art keywords
layer
ions
cathode layer
area
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10303942A
Other languages
German (de)
English (en)
Other versions
DE10303942A1 (de
Inventor
Shinichi Ishizawa
Yoshifumi Tomomatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10303942A1 publication Critical patent/DE10303942A1/de
Application granted granted Critical
Publication of DE10303942B4 publication Critical patent/DE10303942B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/912—Displacing pn junction

Landscapes

  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE10303942A 2002-01-31 2003-01-31 Herstellungsverfahren für eine PN-Sperrschicht-Diodenvorrichtung, und eine PN-Sperrschicht-Diodenvorrichtung Expired - Fee Related DE10303942B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002023676A JP4146645B2 (ja) 2002-01-31 2002-01-31 ｐｎ接合ダイオードの製造方法及びｐｎ接合ダイオード
JP2002/023676 2002-01-31

Publications (2)

Publication Number Publication Date
DE10303942A1 DE10303942A1 (de) 2003-08-21
DE10303942B4 true DE10303942B4 (de) 2007-12-06

Family

ID=27606411

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10303942A Expired - Fee Related DE10303942B4 (de) 2002-01-31 2003-01-31 Herstellungsverfahren für eine PN-Sperrschicht-Diodenvorrichtung, und eine PN-Sperrschicht-Diodenvorrichtung

Country Status (4)

Country Link
US (1) US6709914B2 (https=)
JP (1) JP4146645B2 (https=)
CH (1) CH696374A5 (https=)
DE (1) DE10303942B4 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108346A (ja) * 2004-10-05 2006-04-20 Matsushita Electric Ind Co Ltd チップ型半導体素子とその製造方法
CN100361316C (zh) * 2005-10-28 2008-01-09 冯守华 原子级p-n结单晶整流器及其应用
JP5374883B2 (ja) 2008-02-08 2013-12-25 富士電機株式会社 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261874B1 (en) * 2000-06-14 2001-07-17 International Rectifier Corp. Fast recovery diode and method for its manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2963204B2 (ja) 1990-12-12 1999-10-18 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタの製造方法
JPH10116998A (ja) 1996-10-14 1998-05-06 Toyota Motor Corp 半導体装置およびその製造方法
GB9709642D0 (en) 1997-05-14 1997-07-02 Plessey Semiconductors Ltd Improvements in or relating to semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261874B1 (en) * 2000-06-14 2001-07-17 International Rectifier Corp. Fast recovery diode and method for its manufacture

Also Published As

Publication number Publication date
US20030141513A1 (en) 2003-07-31
DE10303942A1 (de) 2003-08-21
CH696374A5 (de) 2007-05-15
US6709914B2 (en) 2004-03-23
JP4146645B2 (ja) 2008-09-10
JP2003224134A (ja) 2003-08-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee