JP4146645B2 - ｐｎ接合ダイオードの製造方法及びｐｎ接合ダイオード - Google Patents

ｐｎ接合ダイオードの製造方法及びｐｎ接合ダイオード Download PDF

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Publication number
JP4146645B2
JP4146645B2 JP2002023676A JP2002023676A JP4146645B2 JP 4146645 B2 JP4146645 B2 JP 4146645B2 JP 2002023676 A JP2002023676 A JP 2002023676A JP 2002023676 A JP2002023676 A JP 2002023676A JP 4146645 B2 JP4146645 B2 JP 4146645B2
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JP
Japan
Prior art keywords
region
layer
defect
junction diode
cathode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002023676A
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English (en)
Japanese (ja)
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JP2003224134A5 (https=
JP2003224134A (ja
Inventor
慎一 石澤
佳史 友松
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002023676A priority Critical patent/JP4146645B2/ja
Priority to US10/331,646 priority patent/US6709914B2/en
Priority to CH00145/03A priority patent/CH696374A5/de
Priority to DE10303942A priority patent/DE10303942B4/de
Publication of JP2003224134A publication Critical patent/JP2003224134A/ja
Publication of JP2003224134A5 publication Critical patent/JP2003224134A5/ja
Application granted granted Critical
Publication of JP4146645B2 publication Critical patent/JP4146645B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/912—Displacing pn junction

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  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2002023676A 2002-01-31 2002-01-31 ｐｎ接合ダイオードの製造方法及びｐｎ接合ダイオード Expired - Fee Related JP4146645B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2002023676A JP4146645B2 (ja) 2002-01-31 2002-01-31 ｐｎ接合ダイオードの製造方法及びｐｎ接合ダイオード
US10/331,646 US6709914B2 (en) 2002-01-31 2002-12-31 Manufacturing process of pn junction diode device and pn junction diode device
CH00145/03A CH696374A5 (de) 2002-01-31 2003-01-31 Herstellungsverfahren für eine PN-Sperrschicht-Diodenvorrichtung, und eine PN-Sperrschicht-Diodenvorrichtung.
DE10303942A DE10303942B4 (de) 2002-01-31 2003-01-31 Herstellungsverfahren für eine PN-Sperrschicht-Diodenvorrichtung, und eine PN-Sperrschicht-Diodenvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002023676A JP4146645B2 (ja) 2002-01-31 2002-01-31 ｐｎ接合ダイオードの製造方法及びｐｎ接合ダイオード

Publications (3)

Publication Number Publication Date
JP2003224134A JP2003224134A (ja) 2003-08-08
JP2003224134A5 JP2003224134A5 (https=) 2005-06-09
JP4146645B2 true JP4146645B2 (ja) 2008-09-10

Family

ID=27606411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002023676A Expired - Fee Related JP4146645B2 (ja) 2002-01-31 2002-01-31 ｐｎ接合ダイオードの製造方法及びｐｎ接合ダイオード

Country Status (4)

Country Link
US (1) US6709914B2 (https=)
JP (1) JP4146645B2 (https=)
CH (1) CH696374A5 (https=)
DE (1) DE10303942B4 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108346A (ja) * 2004-10-05 2006-04-20 Matsushita Electric Ind Co Ltd チップ型半導体素子とその製造方法
CN100361316C (zh) * 2005-10-28 2008-01-09 冯守华 原子级p-n结单晶整流器及其应用
JP5374883B2 (ja) 2008-02-08 2013-12-25 富士電機株式会社 半導体装置およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2963204B2 (ja) 1990-12-12 1999-10-18 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタの製造方法
JPH10116998A (ja) 1996-10-14 1998-05-06 Toyota Motor Corp 半導体装置およびその製造方法
GB9709642D0 (en) 1997-05-14 1997-07-02 Plessey Semiconductors Ltd Improvements in or relating to semiconductor devices
US6261874B1 (en) * 2000-06-14 2001-07-17 International Rectifier Corp. Fast recovery diode and method for its manufacture

Also Published As

Publication number Publication date
US20030141513A1 (en) 2003-07-31
DE10303942A1 (de) 2003-08-21
CH696374A5 (de) 2007-05-15
US6709914B2 (en) 2004-03-23
DE10303942B4 (de) 2007-12-06
JP2003224134A (ja) 2003-08-08

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