DE102020115120A1 - Nanosheet-feldeffekttransistor-vorrichtung und verfahren zu deren herstellung - Google Patents

Nanosheet-feldeffekttransistor-vorrichtung und verfahren zu deren herstellung Download PDF

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Publication number
DE102020115120A1
DE102020115120A1 DE102020115120.9A DE102020115120A DE102020115120A1 DE 102020115120 A1 DE102020115120 A1 DE 102020115120A1 DE 102020115120 A DE102020115120 A DE 102020115120A DE 102020115120 A1 DE102020115120 A1 DE 102020115120A1
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layer
source
semiconductor
inner spacers
drain regions
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DE102020115120.9A
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German (de)
English (en)
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Sai-Hooi Yeong
Bo-Feng YOUNG
Chien Ning Yao
Chi On Chui
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers

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  • Crystallography & Structural Chemistry (AREA)
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
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US11227956B2 (en) * 2019-12-30 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Nanosheet field-effect transistor device and method of forming
KR20210091478A (ko) * 2020-01-14 2021-07-22 삼성전자주식회사 반도체 장치
KR20210124731A (ko) * 2020-04-07 2021-10-15 삼성전자주식회사 게이트 스페이서를 갖는 반도체 소자들
KR20220077273A (ko) * 2020-12-01 2022-06-09 삼성전자주식회사 반도체 소자
US20230123484A1 (en) * 2021-10-19 2023-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure and method for forming the same
US20230138136A1 (en) * 2021-11-04 2023-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. NanoStructure Field-Effect Transistor Device and Methods of Forming
US20230187532A1 (en) * 2021-12-15 2023-06-15 International Business Machines Corporation Nanosheet device with t-shaped dual inner spacer
TWI803375B (zh) * 2022-04-19 2023-05-21 南亞科技股份有限公司 具有接觸結構之半導體元件的製備方法
US11903179B2 (en) 2022-04-19 2024-02-13 Nanya Technology Corporation Method of manufacturing semiconductor structure having contact structure
US11942425B2 (en) 2022-04-19 2024-03-26 Nanya Technology Corporation Semiconductor structure having contact structure
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US10566438B2 (en) * 2018-04-02 2020-02-18 International Business Machines Corporation Nanosheet transistor with dual inner airgap spacers
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US11227956B2 (en) 2022-01-18
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US20210202758A1 (en) 2021-07-01
US20230369512A1 (en) 2023-11-16

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