DE102020110616B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE102020110616B4
DE102020110616B4 DE102020110616.5A DE102020110616A DE102020110616B4 DE 102020110616 B4 DE102020110616 B4 DE 102020110616B4 DE 102020110616 A DE102020110616 A DE 102020110616A DE 102020110616 B4 DE102020110616 B4 DE 102020110616B4
Authority
DE
Germany
Prior art keywords
semiconductor element
resin
semiconductor device
casting resin
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102020110616.5A
Other languages
German (de)
English (en)
Other versions
DE102020110616A1 (de
Inventor
Akira Kosugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102020110616A1 publication Critical patent/DE102020110616A1/de
Application granted granted Critical
Publication of DE102020110616B4 publication Critical patent/DE102020110616B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/479Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/811Multiple chips on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/251Organics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/778Auxiliary members characterised by their shape in encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/421Shapes or dispositions
    • H10W70/424Cross-sectional shapes
    • H10W70/427Bent parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/481Encapsulations, e.g. protective coatings characterised by their materials comprising semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE102020110616.5A 2019-04-26 2020-04-20 Halbleitervorrichtung Active DE102020110616B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019084802A JP7134131B2 (ja) 2019-04-26 2019-04-26 半導体装置
JP2019-084802 2019-04-26

Publications (2)

Publication Number Publication Date
DE102020110616A1 DE102020110616A1 (de) 2020-10-29
DE102020110616B4 true DE102020110616B4 (de) 2026-01-15

Family

ID=72840145

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102020110616.5A Active DE102020110616B4 (de) 2019-04-26 2020-04-20 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US11164812B2 (https=)
JP (1) JP7134131B2 (https=)
CN (1) CN111863742B (https=)
DE (1) DE102020110616B4 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7649171B2 (ja) * 2021-03-17 2025-03-19 ローム株式会社 半導体装置
JP7594950B2 (ja) * 2021-03-17 2024-12-05 ローム株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040089928A1 (en) 2002-11-11 2004-05-13 Mitsubishi Denki Kabushiki Kaisha Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer
DE102008025705A1 (de) 2007-08-31 2009-03-05 Mitsubishi Electric Corp. Halbleitervorrichtung
DE112014006142T5 (de) 2014-01-10 2016-09-29 Mitsubishi Electric Corporation Leistungshalbleiteranordnung
DE112018003419T5 (de) 2017-07-03 2020-08-20 Mitsubishi Electric Corporation Halbleiterbauelement

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536745A (ja) 1991-08-01 1993-02-12 Shinko Electric Ind Co Ltd 封止金型及び封止方法
JPH0595014A (ja) 1991-10-02 1993-04-16 Hitachi Ltd 封止体形成方法
JP3345241B2 (ja) * 1995-11-30 2002-11-18 三菱電機株式会社 半導体装置
JP3572833B2 (ja) * 1996-12-19 2004-10-06 株式会社デンソー 樹脂封止型半導体装置の製造方法
JP3390661B2 (ja) * 1997-11-13 2003-03-24 三菱電機株式会社 パワーモジュール
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
JP2004063688A (ja) * 2002-07-26 2004-02-26 Mitsubishi Electric Corp 半導体装置及び半導体アセンブリモジュール
JP4089636B2 (ja) * 2004-02-19 2008-05-28 三菱電機株式会社 熱伝導性樹脂シートの製造方法およびパワーモジュールの製造方法
KR101204564B1 (ko) * 2011-09-30 2012-11-23 삼성전기주식회사 전력 모듈 패키지 및 그 제조 방법
JP5863599B2 (ja) * 2012-08-21 2016-02-16 三菱電機株式会社 パワーモジュール
JP6797002B2 (ja) * 2016-11-18 2020-12-09 三菱電機株式会社 半導体装置および半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040089928A1 (en) 2002-11-11 2004-05-13 Mitsubishi Denki Kabushiki Kaisha Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer
DE102008025705A1 (de) 2007-08-31 2009-03-05 Mitsubishi Electric Corp. Halbleitervorrichtung
DE112014006142T5 (de) 2014-01-10 2016-09-29 Mitsubishi Electric Corporation Leistungshalbleiteranordnung
DE112018003419T5 (de) 2017-07-03 2020-08-20 Mitsubishi Electric Corporation Halbleiterbauelement

Also Published As

Publication number Publication date
CN111863742A (zh) 2020-10-30
JP2020181917A (ja) 2020-11-05
US11164812B2 (en) 2021-11-02
US20200343173A1 (en) 2020-10-29
JP7134131B2 (ja) 2022-09-09
CN111863742B (zh) 2024-06-07
DE102020110616A1 (de) 2020-10-29

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Legal Events

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R016 Response to examination communication
R084 Declaration of willingness to licence
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0023280000

Ipc: H10W0074000000