DE102018127379A8 - Ein zum Reduzieren einer Schreiblatenz fähiges Verfahren zum Betreiben einer resistiven Speichervorrichtung - Google Patents
Ein zum Reduzieren einer Schreiblatenz fähiges Verfahren zum Betreiben einer resistiven Speichervorrichtung Download PDFInfo
- Publication number
- DE102018127379A8 DE102018127379A8 DE102018127379.7A DE102018127379A DE102018127379A8 DE 102018127379 A8 DE102018127379 A8 DE 102018127379A8 DE 102018127379 A DE102018127379 A DE 102018127379A DE 102018127379 A8 DE102018127379 A8 DE 102018127379A8
- Authority
- DE
- Germany
- Prior art keywords
- operating
- memory device
- resistive memory
- write latency
- reducing write
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0061—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0076—Write operation performed depending on read result
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2018-0023899 | 2018-02-27 | ||
| KR1020180023899A KR102452623B1 (ko) | 2018-02-27 | 2018-02-27 | 기입 레이턴시를 줄일 수 있는 저항성 메모리 장치의 동작 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102018127379A1 DE102018127379A1 (de) | 2019-08-29 |
| DE102018127379A8 true DE102018127379A8 (de) | 2019-12-12 |
Family
ID=67550264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102018127379.7A Pending DE102018127379A1 (de) | 2018-02-27 | 2018-11-02 | Ein zum Reduzieren einer Schreiblatenz fähiges Verfahren zum Betreiben einerresistiven Speichervorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10629262B2 (de) |
| KR (1) | KR102452623B1 (de) |
| CN (1) | CN110197687A (de) |
| DE (1) | DE102018127379A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210081049A (ko) * | 2019-12-23 | 2021-07-01 | 에스케이하이닉스 주식회사 | 저항성 메모리 장치 및 그의 동작 방법 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6545907B1 (en) | 2001-10-30 | 2003-04-08 | Ovonyx, Inc. | Technique and apparatus for performing write operations to a phase change material memory device |
| KR100827702B1 (ko) | 2006-11-01 | 2008-05-07 | 삼성전자주식회사 | 가변저항 반도체 메모리 장치 |
| JP4309421B2 (ja) | 2006-12-25 | 2009-08-05 | エルピーダメモリ株式会社 | 半導体記憶装置とその書き込み制御方法 |
| KR100819061B1 (ko) * | 2007-03-06 | 2008-04-03 | 한국전자통신연구원 | 쓰기 전력 계산 및 데이터 반전 기능을 통한 상 변화메모리에서의 데이터 쓰기 장치 및 방법 |
| US8332575B2 (en) * | 2007-06-20 | 2012-12-11 | Samsung Electronics Co., Ltd. | Data management systems, methods and computer program products using a phase-change random access memory for selective data maintenance |
| DE102007036989B4 (de) | 2007-08-06 | 2015-02-26 | Qimonda Ag | Verfahren zum Betrieb einer Speichervorrichtung, Speichereinrichtung und Speichervorrichtung |
| KR20090016195A (ko) * | 2007-08-10 | 2009-02-13 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치 |
| KR101411499B1 (ko) * | 2008-05-19 | 2014-07-01 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그것의 관리 방법 |
| JP5474327B2 (ja) * | 2008-10-02 | 2014-04-16 | ピーエスフォー ルクスコ エスエイアールエル | 半導体記憶装置及びこれを備えるデータ処理システム |
| US9208835B2 (en) | 2009-12-29 | 2015-12-08 | Micron Technology, Inc. | Timing violation handling in a synchronous interface memory |
| US8184487B2 (en) | 2010-08-30 | 2012-05-22 | Micron Technology, Inc. | Modified read operation for non-volatile memory |
| KR20130134608A (ko) * | 2012-05-31 | 2013-12-10 | 에스케이하이닉스 주식회사 | 가변 저항 메모리 장치 및 그것을 포함하는 데이터 저장 장치 |
| WO2014013595A1 (ja) * | 2012-07-19 | 2014-01-23 | 株式会社日立製作所 | 半導体装置 |
| CN102831929B (zh) * | 2012-09-04 | 2015-07-22 | 中国科学院上海微系统与信息技术研究所 | 一种相变存储器的读写转换系统及方法 |
| WO2014058994A2 (en) | 2012-10-11 | 2014-04-17 | Everspin Technologies, Inc. | Memory device with timing overlap mode |
| CN104142892B (zh) * | 2013-05-09 | 2017-08-11 | 华为技术有限公司 | 一种数据读写方法、装置及系统 |
| KR20150020477A (ko) | 2013-08-16 | 2015-02-26 | 삼성전자주식회사 | 메모리 장치, 이를 포함하는 메모리 시스템 및 그 동작 방법 |
| KR20150044475A (ko) * | 2013-10-16 | 2015-04-27 | 에스케이하이닉스 주식회사 | 저항성 메모리 장치 및 동작 방법 방법과 이를 포함하는 시스템 |
| US9239788B2 (en) * | 2013-10-24 | 2016-01-19 | Qualcomm Incorporated | Split write operation for resistive memory cache |
| FR3015103B1 (fr) * | 2013-12-12 | 2017-05-26 | Commissariat Energie Atomique | Systeme d'ecriture de donnees dans une memoire |
| KR102144779B1 (ko) * | 2014-02-04 | 2020-08-14 | 삼성전자 주식회사 | 저항체를 이용한 비휘발성 메모리 장치의 구동 방법 |
| US9257167B2 (en) | 2014-03-13 | 2016-02-09 | Katsuyuki Fujita | Resistance change memory |
| KR102131324B1 (ko) * | 2014-07-08 | 2020-07-07 | 삼성전자 주식회사 | 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법 |
| US20170229176A1 (en) * | 2014-09-19 | 2017-08-10 | Hitach, Ltd. | Semiconductor storage device, and storage device using same |
| KR20170055786A (ko) | 2015-11-12 | 2017-05-22 | 삼성전자주식회사 | 데이터 기입 및 독출 레이턴시를 제어하는 레이턴시 제어 회로를 갖는 메모리 장치 |
| US9761306B1 (en) | 2016-03-08 | 2017-09-12 | Toshiba Memory Corporation | Resistive memory device and method of programming the same |
| US9859003B1 (en) * | 2016-10-26 | 2018-01-02 | Arm Limited | Selective writes in a storage element |
-
2018
- 2018-02-27 KR KR1020180023899A patent/KR102452623B1/ko active IP Right Grant
- 2018-08-29 US US16/116,141 patent/US10629262B2/en active Active
- 2018-11-02 DE DE102018127379.7A patent/DE102018127379A1/de active Pending
-
2019
- 2019-02-20 CN CN201910125513.8A patent/CN110197687A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20190267084A1 (en) | 2019-08-29 |
| KR102452623B1 (ko) | 2022-10-07 |
| DE102018127379A1 (de) | 2019-08-29 |
| CN110197687A (zh) | 2019-09-03 |
| KR20190102870A (ko) | 2019-09-04 |
| US10629262B2 (en) | 2020-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE102020100101B8 (de) | Verfahren zum ausbilden einer halbleitervorrichtungsstruktur | |
| DE112018003423A5 (de) | Verfahren zum Steuern eines Parkvorgangs | |
| EP3520107A4 (de) | Verfahren zum schreiben von daten auf eine speichervorrichtung mit dynamischen redundanzregistern | |
| GB201411193D0 (en) | A device controller and method for performing a plurality of write transactions automatically within a non-volatile data storage device | |
| DE102011055714B8 (de) | Verfahren zum Programmieren einer nicht-flüchtigen Speichervorrichtung | |
| DE112016003158A5 (de) | Reinigungseinrichtung sowie Verfahren zum Reinigen einer Fläche | |
| DE112014001805A5 (de) | Dämpfereinrichtung für ein Fahrzeug sowie Verfahren zum Auslegen einer Dämpfereinrichtung | |
| DE102015122967A8 (de) | Verfahren zum Einstellen einer Kühlergrillverschlussöffnung | |
| UA42026S (uk) | Ручка для письма | |
| DE112018000313A5 (de) | Verfahren zum Erstellen einer fusionierten Freiraumkarte, elektronische Steuerungsvorrichtung und Speichermedium | |
| DE112016002595A5 (de) | Verfahren zum betrieb eines umdrehungssensors und entsprechender umdrehungssensor | |
| DE112014004309A5 (de) | Verfahren zum versorgen eines steuergeräts | |
| DE112017007232A5 (de) | Verfahren zum Betreiben einer Dampferzeugungsvorrichtung | |
| DE112016000151A5 (de) | Steuervorrichtung für ein Fahrzeug und Verfahren | |
| DE102016204626A8 (de) | Arraysubstrat und verfahren zum bilden desselben, verfahren zum erfassen einer berührungssteuerungsoperation einer berührungssteuerungsanzeigevorrichtung | |
| DE102018127379A8 (de) | Ein zum Reduzieren einer Schreiblatenz fähiges Verfahren zum Betreiben einer resistiven Speichervorrichtung | |
| DE112020001568A5 (de) | Elektronisches Steuergerät für eine Heizeinrichtung | |
| DE112016007502A5 (de) | Temperiervorrichtung zum Temperieren eines Bauteils | |
| DE102019006748A8 (de) | Roboterlehrvorrichtung, roboterlehrverfahren und verfahren zum speichern einer betriebsanweisung | |
| DE112017003171A5 (de) | Verfahren zum Ermitteln einer Zeit | |
| DE112018001456A5 (de) | Verfahren zum erhitzen eines mediums | |
| DE112019004953A5 (de) | Verfahren zum Erfassen von Nutzungsdaten von Walzen | |
| DE112018000979A5 (de) | Verfahren zum Betreiben einer Beleuchtungseinrichtung | |
| DE112018007486A5 (de) | Verfahren zum Herstellen einer Kontaktierungseinrichtung | |
| DE112015006283A5 (de) | Magnetostriktive Wegmessvorrichtung und Verfahren zum Betreiben einer magnetostriktiven Wegmessvorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication |