DE102014210882B4 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung Download PDF

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Publication number
DE102014210882B4
DE102014210882B4 DE102014210882.9A DE102014210882A DE102014210882B4 DE 102014210882 B4 DE102014210882 B4 DE 102014210882B4 DE 102014210882 A DE102014210882 A DE 102014210882A DE 102014210882 B4 DE102014210882 B4 DE 102014210882B4
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DE
Germany
Prior art keywords
developing solution
film
semiconductor device
film thickness
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102014210882.9A
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German (de)
English (en)
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DE102014210882A1 (de
Inventor
Sunao Aya
Shozo Shikama
Hideaki YUKI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of DE102014210882A1 publication Critical patent/DE102014210882A1/de
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Publication of DE102014210882B4 publication Critical patent/DE102014210882B4/de
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE102014210882.9A 2013-06-13 2014-06-06 Verfahren zur Herstellung einer Halbleitervorrichtung Active DE102014210882B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013124352A JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法
JP2013-124352 2013-06-13

Publications (2)

Publication Number Publication Date
DE102014210882A1 DE102014210882A1 (de) 2014-12-18
DE102014210882B4 true DE102014210882B4 (de) 2019-11-14

Family

ID=52009962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102014210882.9A Active DE102014210882B4 (de) 2013-06-13 2014-06-06 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US9188872B2 (https=)
JP (1) JP5940022B2 (https=)
KR (2) KR20140145550A (https=)
CN (1) CN104238280B (https=)
DE (1) DE102014210882B4 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JPH10339956A (ja) * 1997-06-06 1998-12-22 Nec Kyushu Ltd ウエハのレジスト現像方法
US5897982A (en) * 1996-03-05 1999-04-27 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
JP2001044115A (ja) * 1999-08-04 2001-02-16 Nec Corp 半導体の製造装置とその製造方法
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
JP2002184679A (ja) * 2000-12-18 2002-06-28 Sharp Corp 半導体装置の製造方法
US20040043329A1 (en) * 2002-09-04 2004-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for photoresist development with improved CD
JP2009004597A (ja) * 2007-06-22 2009-01-08 Sokudo:Kk 基板現像方法および現像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929838A (https=) * 1972-07-15 1974-03-16
JP2652481B2 (ja) * 1991-10-25 1997-09-10 大日本スクリーン製造株式会社 基板の現像処理方法
JPH06349725A (ja) * 1993-06-08 1994-12-22 Dainippon Screen Mfg Co Ltd 現像装置
JPH10232498A (ja) * 1997-02-19 1998-09-02 Nec Kyushu Ltd 現像装置
JPH11329960A (ja) * 1998-02-23 1999-11-30 Toshiba Corp 基板処理方法及び基板処理装置
JP3492546B2 (ja) * 1999-05-06 2004-02-03 東京エレクトロン株式会社 液処理装置及びその方法
US6159662A (en) * 1999-05-17 2000-12-12 Taiwan Semiconductor Manufacturing Company Photoresist development method with reduced cycle time and improved performance
US6706321B2 (en) 2000-06-13 2004-03-16 Tokyo Electron Limited Developing treatment method and developing treatment unit
JP3704059B2 (ja) * 2000-06-13 2005-10-05 東京エレクトロン株式会社 現像処理方法及び現像処理装置
JP2007305864A (ja) * 2006-05-12 2007-11-22 Matsushita Electric Ind Co Ltd 現像方法及びそれを用いた半導体装置の製造方法
JP5836021B2 (ja) 2011-09-02 2015-12-24 昭和電工株式会社 厚膜レジストの現像方法、及び半導体デバイスの製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5897982A (en) * 1996-03-05 1999-04-27 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JPH10339956A (ja) * 1997-06-06 1998-12-22 Nec Kyushu Ltd ウエハのレジスト現像方法
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
JP2001044115A (ja) * 1999-08-04 2001-02-16 Nec Corp 半導体の製造装置とその製造方法
JP2002184679A (ja) * 2000-12-18 2002-06-28 Sharp Corp 半導体装置の製造方法
US20040043329A1 (en) * 2002-09-04 2004-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for photoresist development with improved CD
JP2009004597A (ja) * 2007-06-22 2009-01-08 Sokudo:Kk 基板現像方法および現像装置

Also Published As

Publication number Publication date
US20140370445A1 (en) 2014-12-18
JP2015002184A (ja) 2015-01-05
JP5940022B2 (ja) 2016-06-29
CN104238280A (zh) 2014-12-24
CN104238280B (zh) 2017-11-28
DE102014210882A1 (de) 2014-12-18
KR20160007460A (ko) 2016-01-20
KR20140145550A (ko) 2014-12-23
US9188872B2 (en) 2015-11-17

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