KR20140145550A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR20140145550A
KR20140145550A KR1020140066775A KR20140066775A KR20140145550A KR 20140145550 A KR20140145550 A KR 20140145550A KR 1020140066775 A KR1020140066775 A KR 1020140066775A KR 20140066775 A KR20140066775 A KR 20140066775A KR 20140145550 A KR20140145550 A KR 20140145550A
Authority
KR
South Korea
Prior art keywords
developer
film
semiconductor substrate
semiconductor device
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020140066775A
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English (en)
Korean (ko)
Inventor
수나오 아야
소조 시카마
히데아키 유키
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20140145550A publication Critical patent/KR20140145550A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020140066775A 2013-06-13 2014-06-02 반도체장치의 제조방법 Ceased KR20140145550A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013124352A JP5940022B2 (ja) 2013-06-13 2013-06-13 半導体装置の製造方法
JPJP-P-2013-124352 2013-06-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020150188082A Division KR20160007460A (ko) 2013-06-13 2015-12-29 반도체장치의 제조방법

Publications (1)

Publication Number Publication Date
KR20140145550A true KR20140145550A (ko) 2014-12-23

Family

ID=52009962

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020140066775A Ceased KR20140145550A (ko) 2013-06-13 2014-06-02 반도체장치의 제조방법
KR1020150188082A Ceased KR20160007460A (ko) 2013-06-13 2015-12-29 반도체장치의 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020150188082A Ceased KR20160007460A (ko) 2013-06-13 2015-12-29 반도체장치의 제조방법

Country Status (5)

Country Link
US (1) US9188872B2 (https=)
JP (1) JP5940022B2 (https=)
KR (2) KR20140145550A (https=)
CN (1) CN104238280B (https=)
DE (1) DE102014210882B4 (https=)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929838A (https=) * 1972-07-15 1974-03-16
JP2652481B2 (ja) * 1991-10-25 1997-09-10 大日本スクリーン製造株式会社 基板の現像処理方法
JPH06349725A (ja) * 1993-06-08 1994-12-22 Dainippon Screen Mfg Co Ltd 現像装置
US5897982A (en) * 1996-03-05 1999-04-27 Kabushiki Kaisha Toshiba Resist develop process having a post develop dispense step
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
JPH10232498A (ja) * 1997-02-19 1998-09-02 Nec Kyushu Ltd 現像装置
JPH10339956A (ja) * 1997-06-06 1998-12-22 Nec Kyushu Ltd ウエハのレジスト現像方法
US6265323B1 (en) * 1998-02-23 2001-07-24 Kabushiki Kaisha Toshiba Substrate processing method and apparatus
JPH11329960A (ja) * 1998-02-23 1999-11-30 Toshiba Corp 基板処理方法及び基板処理装置
JP3492546B2 (ja) * 1999-05-06 2004-02-03 東京エレクトロン株式会社 液処理装置及びその方法
US6159662A (en) * 1999-05-17 2000-12-12 Taiwan Semiconductor Manufacturing Company Photoresist development method with reduced cycle time and improved performance
JP2001044115A (ja) * 1999-08-04 2001-02-16 Nec Corp 半導体の製造装置とその製造方法
US6706321B2 (en) 2000-06-13 2004-03-16 Tokyo Electron Limited Developing treatment method and developing treatment unit
JP3704059B2 (ja) * 2000-06-13 2005-10-05 東京エレクトロン株式会社 現像処理方法及び現像処理装置
JP3708433B2 (ja) * 2000-12-18 2005-10-19 シャープ株式会社 半導体装置の製造方法
US6811955B2 (en) * 2002-09-04 2004-11-02 Taiwan Semiconductor Manufacturing Co., Ltd Method for photoresist development with improved CD
JP2007305864A (ja) * 2006-05-12 2007-11-22 Matsushita Electric Ind Co Ltd 現像方法及びそれを用いた半導体装置の製造方法
JP2009004597A (ja) 2007-06-22 2009-01-08 Sokudo:Kk 基板現像方法および現像装置
JP5836021B2 (ja) 2011-09-02 2015-12-24 昭和電工株式会社 厚膜レジストの現像方法、及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
US20140370445A1 (en) 2014-12-18
JP2015002184A (ja) 2015-01-05
JP5940022B2 (ja) 2016-06-29
DE102014210882B4 (de) 2019-11-14
CN104238280A (zh) 2014-12-24
CN104238280B (zh) 2017-11-28
DE102014210882A1 (de) 2014-12-18
KR20160007460A (ko) 2016-01-20
US9188872B2 (en) 2015-11-17

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