DE102013109297B4 - Halbleitervorrichtungen mit Stützmustern in Zwischenraumbereichen zwischen leitfähigen Mustern und Verfahren zum Herstellen derselben - Google Patents

Halbleitervorrichtungen mit Stützmustern in Zwischenraumbereichen zwischen leitfähigen Mustern und Verfahren zum Herstellen derselben

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Publication number
DE102013109297B4
DE102013109297B4 DE102013109297.7A DE102013109297A DE102013109297B4 DE 102013109297 B4 DE102013109297 B4 DE 102013109297B4 DE 102013109297 A DE102013109297 A DE 102013109297A DE 102013109297 B4 DE102013109297 B4 DE 102013109297B4
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Prior art keywords
conductive patterns
layer
pattern
support pattern
cover layer
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Active
Application number
DE102013109297.7A
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German (de)
English (en)
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DE102013109297A1 (de
Inventor
Kyu-hee Han
Sanghoon Ahn
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
DE102013109297.7A 2012-09-05 2013-08-28 Halbleitervorrichtungen mit Stützmustern in Zwischenraumbereichen zwischen leitfähigen Mustern und Verfahren zum Herstellen derselben Active DE102013109297B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0098464 2012-09-05
KR1020120098464A KR102002815B1 (ko) 2012-09-05 2012-09-05 반도체 장치 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
DE102013109297A1 DE102013109297A1 (de) 2014-03-13
DE102013109297B4 true DE102013109297B4 (de) 2026-01-15

Family

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Application Number Title Priority Date Filing Date
DE102013109297.7A Active DE102013109297B4 (de) 2012-09-05 2013-08-28 Halbleitervorrichtungen mit Stützmustern in Zwischenraumbereichen zwischen leitfähigen Mustern und Verfahren zum Herstellen derselben

Country Status (6)

Country Link
US (2) US9337150B2 (https=)
JP (1) JP6356396B2 (https=)
KR (1) KR102002815B1 (https=)
CN (1) CN103681600B (https=)
DE (1) DE102013109297B4 (https=)
TW (1) TWI588871B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102119829B1 (ko) * 2013-09-27 2020-06-05 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US9312168B2 (en) * 2013-12-16 2016-04-12 Applied Materials, Inc. Air gap structure integration using a processing system
US9330969B2 (en) * 2014-02-12 2016-05-03 Sandisk Technologies Inc. Air gap formation between bit lines with top protection
FR3018951B1 (fr) * 2014-03-18 2017-06-09 Commissariat Energie Atomique Procede de gravure d'un materiau dielectrique poreux
US9583380B2 (en) * 2014-07-17 2017-02-28 Globalfoundries Inc. Anisotropic material damage process for etching low-K dielectric materials
KR102201092B1 (ko) * 2014-09-16 2021-01-11 삼성전자주식회사 반도체 장치 제조 방법
CN104327850B (zh) * 2014-11-03 2016-04-06 天津理工大学 一种氮化物荧光粉的低温等离子体制备方法
US10483160B2 (en) * 2015-09-23 2019-11-19 Intel Corporation Ultra thin helmet dielectric layer for maskless air gap and replacement ILD processes
US9449871B1 (en) * 2015-11-18 2016-09-20 International Business Machines Corporation Hybrid airgap structure with oxide liner
US9865616B2 (en) 2016-02-09 2018-01-09 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US9887134B2 (en) * 2016-02-10 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices
US10504915B2 (en) 2016-03-03 2019-12-10 Toshiba Memory Corporation Integrated circuit device having an air gap between interconnects and method for manufacturing the same
KR102658192B1 (ko) * 2016-07-27 2024-04-18 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
CN107394007B (zh) * 2017-07-31 2019-06-14 渤海大学 一种适用于superstrate结构薄膜太阳电池硫化或硒化的方法
US10644013B2 (en) * 2018-08-15 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Cell boundary structure for embedded memory
EP3654372B1 (en) * 2018-11-13 2021-04-21 IMEC vzw Method of forming an integrated circuit with airgaps and corresponding integrated circuit
CN113632208B (zh) * 2019-04-05 2025-11-18 东京毅力科创株式会社 用于高度选择性氧化硅/氮化硅蚀刻的蚀刻和钝化气体组分的独立控制
US12575143B2 (en) 2020-07-23 2026-03-10 Nanya Technology Corporation Semiconductor device with air gap and boron nitride cap and method for preparing the same
US11380758B2 (en) 2020-07-23 2022-07-05 Nanya Technology Corporation Semiconductor device with air gap and boron nitride cap and method for forming the same
CN114695270B (zh) * 2020-12-30 2024-11-01 长鑫存储技术有限公司 半导体器件的制备方法及半导体器件
US12381113B2 (en) * 2021-08-27 2025-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device structure having air gap and methods of forming the same
JPWO2024134907A1 (https=) * 2022-12-23 2024-06-27
DE102023133538B4 (de) 2023-11-30 2025-12-31 Infineon Technologies Ag Leistungs-halbleiterbauelement mit metallstrukturpassivierung und verfahren zur herstellung des leistungs-halbleiterbauelements

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056112A (ja) * 2008-08-26 2010-03-11 Fujitsu Microelectronics Ltd 半導体装置の製造方法
US20100270677A1 (en) * 2009-04-24 2010-10-28 Nec Electronics Corporation Semiconductor device and method of manufacturing semiconductor device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093634A (en) * 1999-07-26 2000-07-25 United Microelectronics Corp. Method of forming a dielectric layer on a semiconductor wafer
US6252290B1 (en) 1999-10-25 2001-06-26 Chartered Semiconductor Manufacturing Ltd. Method to form, and structure of, a dual damascene interconnect device
JP2001217310A (ja) * 2000-02-02 2001-08-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6917109B2 (en) 2002-11-15 2005-07-12 United Micorelectronics, Corp. Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device
KR100508538B1 (ko) 2003-02-04 2005-08-17 동부아남반도체 주식회사 반도체 금속 라인 제조 공정에서의 에어 갭 형성 방법
CN1795553A (zh) * 2003-05-26 2006-06-28 皇家飞利浦电子股份有限公司 制造具有多孔电介质层和气隙的衬底的方法以及衬底
KR100772835B1 (ko) 2006-07-12 2007-11-01 동부일렉트로닉스 주식회사 에어갭을 포함하는 반도체 소자 및 그 제조방법
US7803713B2 (en) * 2006-09-21 2010-09-28 Taiwan Semiconductor Manufacturing Co. Ltd. Method for fabricating air gap for semiconductor device
JP2008294335A (ja) * 2007-05-28 2008-12-04 Panasonic Corp 半導体装置の製造方法
US7868455B2 (en) 2007-11-01 2011-01-11 Taiwan Semiconductor Manufacturing Company, Ltd. Solving via-misalignment issues in interconnect structures having air-gaps
US20090121356A1 (en) 2007-11-12 2009-05-14 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP2009123775A (ja) * 2007-11-12 2009-06-04 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2009212218A (ja) * 2008-03-03 2009-09-17 Toshiba Corp 半導体記憶装置及びその製造方法
US7754601B2 (en) 2008-06-03 2010-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor interconnect air gap formation process
KR101005669B1 (ko) 2008-09-03 2011-01-05 주식회사 동부하이텍 반도체 소자의 에어갭 제조 방법
KR101517851B1 (ko) 2009-03-26 2015-05-06 삼성전자 주식회사 반도체 소자의 제조 방법
US8298911B2 (en) * 2009-03-26 2012-10-30 Samsung Electronics Co., Ltd. Methods of forming wiring structures
KR20100122700A (ko) 2009-05-13 2010-11-23 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR20110013162A (ko) 2009-07-31 2011-02-09 주식회사 하이닉스반도체 반도체 장치 제조 방법
US8390079B2 (en) * 2010-10-28 2013-03-05 International Business Machines Corporation Sealed air gap for semiconductor chip
JP2012109450A (ja) * 2010-11-18 2012-06-07 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US8182682B1 (en) 2011-02-25 2012-05-22 Pall Corporation Fluid treatment elements and assemblies
JP2012204537A (ja) * 2011-03-24 2012-10-22 Toshiba Corp 半導体記憶装置およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056112A (ja) * 2008-08-26 2010-03-11 Fujitsu Microelectronics Ltd 半導体装置の製造方法
US20100270677A1 (en) * 2009-04-24 2010-10-28 Nec Electronics Corporation Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
KR20140033579A (ko) 2014-03-19
US20140061926A1 (en) 2014-03-06
JP6356396B2 (ja) 2018-07-11
KR102002815B1 (ko) 2019-07-23
TWI588871B (zh) 2017-06-21
US9337150B2 (en) 2016-05-10
TW201417144A (zh) 2014-05-01
US20160225658A1 (en) 2016-08-04
DE102013109297A1 (de) 2014-03-13
JP2014053612A (ja) 2014-03-20
CN103681600A (zh) 2014-03-26
CN103681600B (zh) 2017-12-12
US9741608B2 (en) 2017-08-22

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