DE102012215421B4 - Verfahren zur Herstellung von Kern/Schale-Nanopartikeln - Google Patents

Verfahren zur Herstellung von Kern/Schale-Nanopartikeln Download PDF

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Publication number
DE102012215421B4
DE102012215421B4 DE102012215421.3A DE102012215421A DE102012215421B4 DE 102012215421 B4 DE102012215421 B4 DE 102012215421B4 DE 102012215421 A DE102012215421 A DE 102012215421A DE 102012215421 B4 DE102012215421 B4 DE 102012215421B4
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shell
core
nanoparticles
reaction zone
tubular reactor
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German (de)
English (en)
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DE102012215421A1 (de
Inventor
Van Huong Schmidtke-Tran
Daniel Ness
Prof. Dr. Weller Horst
Steffen Jan Niehaus
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Centrum fuer Angewandte Nanotechnologie CAN GmbH
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Centrum fuer Angewandte Nanotechnologie CAN GmbH
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Priority to DE102012215421.3A priority Critical patent/DE102012215421B4/de
Application filed by Centrum fuer Angewandte Nanotechnologie CAN GmbH filed Critical Centrum fuer Angewandte Nanotechnologie CAN GmbH
Priority to JP2015529027A priority patent/JP6410107B2/ja
Priority to CA2883045A priority patent/CA2883045A1/en
Priority to ES13753331T priority patent/ES2891648T3/es
Priority to CN201380056181.3A priority patent/CN104736234B/zh
Priority to EP13753331.1A priority patent/EP2890485B1/de
Priority to KR1020157007860A priority patent/KR102141505B1/ko
Priority to US14/425,017 priority patent/US10147846B2/en
Priority to PCT/EP2013/067898 priority patent/WO2014033213A2/de
Publication of DE102012215421A1 publication Critical patent/DE102012215421A1/de
Priority to US16/192,230 priority patent/US20190165211A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/02—Making microcapsules or microballoons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B01J19/2475—Membrane reactors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/24—Salt bath containing the element to be diffused
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00099—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor the reactor being immersed in the heat exchange medium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Luminescent Compositions (AREA)
  • Manufacturing Of Micro-Capsules (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Glanulating (AREA)
DE102012215421.3A 2012-08-30 2012-08-30 Verfahren zur Herstellung von Kern/Schale-Nanopartikeln Active DE102012215421B4 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102012215421.3A DE102012215421B4 (de) 2012-08-30 2012-08-30 Verfahren zur Herstellung von Kern/Schale-Nanopartikeln
PCT/EP2013/067898 WO2014033213A2 (de) 2012-08-30 2013-08-29 Verfahren zur herstellung von kern/schale-nanopartikeln und kern-schale-nanopartikel
ES13753331T ES2891648T3 (es) 2012-08-30 2013-08-29 Procedimiento para la fabricación de nanopartículas de núcleo/recubrimiento y nanopartículas de núcleo/recubrimie
CN201380056181.3A CN104736234B (zh) 2012-08-30 2013-08-29 核‑壳纳米颗粒的制备方法和核‑壳纳米颗粒
EP13753331.1A EP2890485B1 (de) 2012-08-30 2013-08-29 Verfahren zur herstellung von kern/schale-nanopartikeln und kern-schale-nanopartikel
KR1020157007860A KR102141505B1 (ko) 2012-08-30 2013-08-29 코어/쉘 나노입자의 제조방법 및 코어/쉘 나노입자
JP2015529027A JP6410107B2 (ja) 2012-08-30 2013-08-29 コア／シェルナノ粒子の製造プロセス及びコア／シェルナノ粒子
CA2883045A CA2883045A1 (en) 2012-08-30 2013-08-29 Method for producing core/shell nanoparticles and core/shell nanoparticles
US14/425,017 US10147846B2 (en) 2012-08-30 2013-08-29 Method for producing core/shell nanoparticles and core/shell nanoparticles
US16/192,230 US20190165211A1 (en) 2012-08-30 2018-11-15 Method for producing core/shell nanoparticles and core/shell nanoparticles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012215421.3A DE102012215421B4 (de) 2012-08-30 2012-08-30 Verfahren zur Herstellung von Kern/Schale-Nanopartikeln

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DE102012215421A1 DE102012215421A1 (de) 2014-03-06
DE102012215421B4 true DE102012215421B4 (de) 2019-08-29

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US (2) US10147846B2 (cg-RX-API-DMAC10.html)
EP (1) EP2890485B1 (cg-RX-API-DMAC10.html)
JP (1) JP6410107B2 (cg-RX-API-DMAC10.html)
KR (1) KR102141505B1 (cg-RX-API-DMAC10.html)
CN (1) CN104736234B (cg-RX-API-DMAC10.html)
CA (1) CA2883045A1 (cg-RX-API-DMAC10.html)
DE (1) DE102012215421B4 (cg-RX-API-DMAC10.html)
ES (1) ES2891648T3 (cg-RX-API-DMAC10.html)
WO (1) WO2014033213A2 (cg-RX-API-DMAC10.html)

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CN112011327A (zh) * 2019-05-28 2020-12-01 苏州星烁纳米科技有限公司 核壳结构量子点的制备方法及由其制备的产品
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Publication number Publication date
US20150214433A1 (en) 2015-07-30
EP2890485B1 (de) 2021-06-02
CN104736234A (zh) 2015-06-24
WO2014033213A3 (de) 2014-05-08
EP2890485A2 (de) 2015-07-08
DE102012215421A1 (de) 2014-03-06
US10147846B2 (en) 2018-12-04
US20190165211A1 (en) 2019-05-30
KR102141505B1 (ko) 2020-08-05
KR20150079572A (ko) 2015-07-08
CN104736234B (zh) 2017-07-14
ES2891648T3 (es) 2022-01-28
JP2015533630A (ja) 2015-11-26
CA2883045A1 (en) 2014-03-06
JP6410107B2 (ja) 2018-10-24
WO2014033213A2 (de) 2014-03-06

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