DE102012019782A1 - Elektrisches Kontakt-Pad - Google Patents
Elektrisches Kontakt-Pad Download PDFInfo
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- DE102012019782A1 DE102012019782A1 DE102012019782.9A DE102012019782A DE102012019782A1 DE 102012019782 A1 DE102012019782 A1 DE 102012019782A1 DE 102012019782 A DE102012019782 A DE 102012019782A DE 102012019782 A1 DE102012019782 A1 DE 102012019782A1
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- contact pad
- electrical
- electrical contact
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Abstract
Die vorliegende Erfindung bezieht sich auf ein Elektrisches Kontakt-Pad, wobei das Elektrische Kontakt-Pad in wenigstens zwei elektrisch voneinander getrennte Bereiche unterteilt ist.
Description
- Die vorliegende Erfindung bezieht sich auf ein elektrisches Kontakt-Pad.
- Die bei einem elektronischen Schaltkreis oder Halbleiter Gehäuse außen sichtbaren Anschlüsse (Pins) sind über Bonddrähte im Innern des Gehäuses mit den Chip-Anschlüssen (Bondinseln oder Pads) verbunden. Die Pads sind ihrerseits metallische Kontakte, welche mittels ohmscher Kontakte elektrisch mit dem Halbleiter verbunden sind. Die Aufgabe des Bonddrahtes ist die elektrische Verbindung zwischen der eigentlichen integrierten Schaltung bzw. dem nackten Bauteil und dem Gehäuse. Während und nach der Herstellung eines Chips ist es erforderlich den Chip zu testen. Beim Testen werden erforderlich Spezialmessungen am Chip durchgeführt, um seine fehlerfreie Arbeitsweise zu überprüfen. Hierfür sind häufig getrennte Potentiale zur Messung notwendig, die jedoch später im „regulären” Betrieb des Chips nicht mehr benötigt werden. Hierfür werden in der Regel zusätzliche Bond-Pads bereitgestellt, welche dann nach dem Testen beispielsweise mit einem Bonddraht verbunden und somit elektrisch kurzgeschlossen werden. Diese Lösung hat den Nachteil, dass wenigstens zwei Bond-Pads und ein Bonddraht bereitgestellt werden müssen. Dies bedingt einen höheren Bedarf an Chipfläche und höhere Materialkosten.
- Daher ist es die Aufgabe der vorliegenden Erfindung diese Nachteile zu überwinden und somit ein elektrisches Kontakt-Pad bereitzustellen, durch das Chipfläche und Kosten eingespart werden kann.
- Diese Aufgabe wird durch den Gegenstand des unabhängigen Anspruchs 1 gelöst. Die abhängigen Ansprüche beschreiben jeweils vorteilhafte Ausführungsformen der vorliegenden Erfindung.
- In einer vorteilhaften Ausführungsform ist das elektrische Kontakt-Pad in wenigstens zwei elektrisch voneinander getrennte Bereiche unterteilt. Die Bereiche können zunächst auf unterschiedlichen Potentialen liegen. Durch Aufbringen eines Bonddrahtes oder Clips werden die Potentialhälften wieder kurzgeschlossen. Ein Vorteil dieser Lösung besteht darin, dass der Chip in seiner produktiven Anwendung keine zwei oder mehr Kontakt-Pads, auch als Bond-Pads bekannt, benötigt, die dann mittels eines Bonddrahtes kurzgeschlossen werden. Dadurch lässt sich die benötigte Chipfläche erheblich reduzieren und Materialkosten lassen sich einsparen.
- In einer weiteren Ausführungsform sind die wenigstens zwei voneinander getrennten Bereiche des elektrischen Kontakt-Pads mittels eines elektrischen Leiters in Kontaktgebieten miteinander kontaktierbar. Kontaktgebiete bilden sich vorzugsweise entlang einer topographischen Trennungslinie der wenigstens zwei Bereiche des elektrischen Kontakt-Pads, da dort die getrennten Bereiche eng beieinander liegen und somit sehr leicht überbrückt werden können und somit elektrisch kontaktierbar sind.
- In einer weiteren Ausführungsform ist der elektrische Leiter zur Kontaktierung der elektrisch getrennten Bereiche des elektrischen Kontakt-Pads ein Bonddraht. Bonddrähte sind leicht beschaffbar und kostengünstig herstellbar. Bonddrähte bestehen meist aus Gold oder auch legiertem oder dotiertem Gold, aber auch Aluminium mit (geringem) Siliziumanteil (AlSi1) und Kupfer finden Verwendung.
- In einer weiteren Ausführungsform bildet der Bonddraht beim Bonden eine Kontaktfläche auf der Oberfläche des Kontakt-Pad, welche Kontaktfläche die wenigstens zwei voneinander getrennten elektrischen Bereiche elektrisch miteinander verbindet. Die verschiedenen Verfahrensvarianten bei der sequentiellen Kontaktierung bzw. Bonden von Halbleiterbauelementen können das Thermokompressionsbonden (TC-Bonden), das Thermosonic-Ball-Wedge-Bonden (TS-Bonden) und/oder das Ultraschall-Wedge-Wedge-Bonden (US-Bonden) sein. Die zuerst genannten Verfahren arbeiten in der Regel mit Golddraht, das US-Bonden kann mit Aluminium bzw. Aluminium-Silizium-Draht (AlSi1) durchgeführt werden. Eine weitere Vorteilhafte Variante des Bondens ist das Bonden im Double Stich Verfahren. Dabei wird der Bonddraht an einem Kontakt beispielsweise eines IC's befestigt, wird dann zu einem weiteren Kontakt des IC's gezogen und dort ebenfalls befestigt und wird dann vom IC weg auf einen äußeren Kontakt gezogen und befestigt.
- In einer weiteren Ausführungsform sind die wenigstens zwei elektrisch voneinander getrennten Bereiche topographisch durch eine gerade Linie und/oder durch eine mäanderartig bzw. schlangenlinienförmig verlaufende Linie innerhalb der kein leitendes Material angeordnet ist, voneinander elektrisch getrennt. Diese Anordnung bietet den Vorteil, dass die Anzahl der potentiellen Kontaktgebiete zwischen den Bereichen des elektrischen Kontakt-Pads mittels des Linienverlaufs des Trennbereiches (keine Metallisierung, also nichtleitend) einstellbar ist.
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1 zeigt ein elektrisches Kontakt-Pad, wobei eine Linie die elektrische Trennung zwischen den zwei Bereichen zeigt. Dabei ist die Linie beispielsweise gerade ausgeführt, oder zusätzlich mit einer Kurve. -
2 zeigt ein elektrisches Kontakt-Pad, wobei eine Linie die elektrische Trennung zwischen den zwei Bereichen zeigt. - Dabei ist die Linie beispielsweise kurvenförmig mit mehreren Kurven ausgeführt.
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3 unterscheidet sich im Wesentlichen von den1 und2 dadurch, dass in dieser Ausführungsform die Linie mäanderförmig oder schlangenförmig mit sehr vielen Windungen und/oder Kurven ausgeführt ist. - Ausführungsbeispiele der Erfindung werden nachfolgend, Bezug nehmend auf die beiliegenden Figuren, näher erläutert. Die Erfindung ist jedoch nicht auf die konkret beschriebenen Ausführungsformen beschränkt, sondern kann in geeigneter Weise modifiziert und abgewandelt werden. Es liegt im Rahmen der Erfindung, einzelnen Merkmale und Merkmalskombinationen einer Ausführungsform mit Merkmalen und Merkmalskombinationen einer anderen Ausführungsform geeignet zu kombinieren, um zu weiteren erfindungsgemäßen Ausführungsformen zu gelangen.
- Bevor im Folgenden die Ausführungsbeispiele der vorliegenden Erfindung an Hand der Figuren näher erläutert werden, wird darauf hingewiesen, dass gleiche Elemente in den Figuren mit den gleichen oder ähnlichen Bezugszeichen versehen sind und dass eine wiederholte Beschreibung dieser Elemente weggelassen wird. Ferner sind die Figuren nicht notwendigerweise maßstabsgerecht. Der Schwerpunkt liegt vielmehr auf der Erläuterung des Grundprinzips.
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1 zeigt ein elektrisches Kontakt-Pad100 , wobei eine Linie150 die elektrische Trennung zwischen den zwei Bereichen110 ,120 zeigt. Die Trennung des elektrischen Kontakt Pad erfolgt vorteilhafterweise im Front-End bei der Fertigung von integrierten Schaltkreisen. Dort können dann an den getrennten Kontakt-Pads100 Spezialmessungen durchgeführt werden. Da diese Spezialmessungen später nicht mehr durchgeführt werden müssen, können die Bereiche110 ,120 des elektrischen Kontakt Pad's100 wieder kurzgeschlossen werden. Dabei können die Bereiche110 ,120 des elektrischen Kontakt-Pad's100 auf gleichen oder unterschiedlichen Potentialen liegen, die dann kurzgeschlossen werden. Die Linie150 oder auch als Spalt bezeichenbar, zeigt das Fehlen eines leitenden Materials an. Vorzugsweise kann dieser Bereich Polyimide, Imide oder Oxide aufweisen oder mit Mold Compound zumindest teilweise gefüllt sein. Alternativ kann dieser Zwischenbereich oder Spaltbereich einen Hohlraum aufweisen. Die Linie150 bzw. der Spalt kann vorzugsweise eine Breite von einigen nm bis zu 100 μm aufweisen. Vorteilhafterweise kann die Linie150 eine Breite im Bereich von 1 μm bis 2 μm aufweisen, oder die Linie150 kann eine Breite im Bereich von 2 μm bis 5 μm aufweisen, oder die Linie150 kann eine Breite im Bereich von 5 μm bis 10 μm aufweisen, oder die Linie150 kann eine Breite im Bereich von 10 μm bis 20 μm aufweisen, oder die Linie150 kann eine Breite im Bereich von 20 μm bis 50 μm aufweisen, oder die Linie150 kann eine Breite im Bereich von über 50 μm aufweisen. Dabei ist die Linie beispielsweise gerade ausgeführt, oder zusätzlich mit einer Kurve. Ferner zeigt die1 ein Beispiel eines Kontaktgebietes300 zur elektrischen Kontaktierung der beiden Bereiche110 ,120 des Kontakt-Pads. Die Kontaktgebiete300 erstrecken sich entlang des Linienverlaufes150 und können dabei unterschiedliche Größen und/oder Formen aufweisen. In dieser Ausführungsform werden nur wenige potentiellen Kontaktgebiete300 bereitgestellt. Die Gefahr, dass ein Bonddraht außerhalb des Kontaktgebietes gebondet wird305 und es somit die Bereiche110 ,120 des elektrischen Kontakt-Pads nicht elektrisch kontaktiert sind, ist hoch. Bonddraht bzw. Clip's weisen meist Gold oder auch legiertes oder dotiertes Gold auf, aber auch Aluminium mit Siliziumanteil (AlSi1) und Kupfer finden Verwendung. Dabei erlauben dünnere Bonddrähte engere Pad-Geometrien und daher höhere Packungsdichten. Im Bereich der Leistungselektronik kommen reine (99,99% Al-Anteil und höher) Aluminium-Materialien zur Anwendung, bei diskreten Halbleitern (Dioden, Transistoren) wird zumeist hochreines Gold verwendet (Kupferdrähte befinden sich zurzeit in der Testphase). Bei Leistungshalbleitern zur Verwendung hoher Stromlasten werden Dickdrähte mit Durchmesser zwischen 100 μm und 500 μm oder Dickdraht-Bändchen verwendet. Reicht das nicht aus, wird mehrfach gebondet. -
2 zeigt ein elektrisches Kontakt-Pad100 , wobei eine Linie150 die Trennung zwischen den zwei Bereichen110 ,120 zeigt. Dabei ist die Linie150 beispielsweise kurvenförmig mit mehreren Kurven ausgeführt. Ferner zeigt die2 ein Beispiel eines Kontaktgebietes zur elektrischen Kontaktierung der beiden Bereiche110 ,120 des Kontakt-Pads. Kontakt-Pads können vorteilhafterweise Kupfer, Kupferlegierungen, Gold, Goldlegierungen, Aluminium, Aluminiumlegierungen aufweisen. Die Kontaktgebiete300 erstrecken sich auch hier entlang des Linienverlaufes150 . In dieser Ausführungsform sind wesentlich mehr potentielle Kontaktgebiete300 zur elektrischen Kontaktierung der Bereiche110 ,120 bereitgestellt. Die Gefahr, dass ein Bonddraht keinen Kurzschluss305 zwischen den beiden Bereichen110 ,120 des elektrischen Kontakt-Pads verursacht ist reduziert. -
3 unterscheidet sich im Wesentlichen von den1 und2 dadurch, dass in dieser Ausführungsform die Linie150 mäanderförmig oder schlangen förmig mit sehr vielen Windungen und/oder Kurven ausgeführt ist. Die Kontaktgebiete300 erstrecken sich auch hier entlang des Linienverlaufes150 . In dieser Ausführungsform ist somit die Anzahl der potentielle Kontaktgebiete300 zur elektrischen Kontaktierung der Bereiche110 ,120 nahezu maximiert. Die Gefahr, dass ein Bonddraht keinen Kurzschluss zwischen den beiden Bereichen110 ,120 des elektrischen Kontakt-Pads verursacht ist nahezu minimiert. Auch das Kontaktgebiet310 bewirkt eine elektrische Kontaktierung der Bereiche110 ,120 . Besonders vorteilhaft ist das Benutzen eines elektrischen Kontakt-Pads, welches zumindest zur Hälfte schon auf dem angezielten Potential liegt, beispielsweise Sourcepotenzial bei einem MOSFET und als Source-Sensor Abgriff bereits am Chip installiert ist. Nach der elektrischen Kontaktierung der Bereiche110 ,120 liegt der gesamte Bereich auf Sourcepotential. Somit sind keine zusätzlichen Chipflächen zur Kontaktierung notwendig. Das hier beschriebene in Bereiche unterteilte Kontakt-Pad kann ferner vorteilhafterweise dort eingesetzt werden, wo verschiedene Metallleitungen miteinander elektrisch kurzgeschlossen werden sollen. Insbesondere bei Sensorstrukturen die auf einem Chip realisiert sind (ON-Chip), bei mehreren Elektroden im Trench (3 Polys oder mehr pro Trench) oder bei gezielt gewollten Verbindungen von Trench zu Trench können elektrische Verbindungen mittels der elektrischer Kontaktierung von Bereichen110 ,120 eines elektrischen Kontakt Pads100 geschaffen werden. Das elektrische Kontakt Pad100 mit elektrisch voneinander getrennten Bereichen110 ,120 kann bei den unterschiedlichsten Bauelementarten Verwendung finden, beispielsweise bei Dioden, MOS, IGBT's, IC's aber auch bei lateral leitenden MOS oder planaren Transistoren oder bei Trench Transistoren mit einem oder mehreren Elektroden im Trench. Auch bei Dual-Poly und Trench MOSFETs ist der Einsatz bzw. die Verwendung besonders vorteilhaft.
Claims (6)
- Elektrisches Kontakt-Pad, wobei das elektrische Kontakt-Pad wenigstens zwei elektrisch voneinander getrennte Bereiche aufweist.
- Elektrisches Kontakt-Pad nach Anspruch 1, wobei die wenigstens zwei voneinander getrennten Bereiche mittels eines elektrischen Leiters in Kontaktgebieten miteinander kontaktiert sind.
- Elektrisches Kontakt-Pad nach Anspruch 2, wobei der elektrische Leiter ein Bonddraht oder ein Clip ist.
- Elektrisches Kontakt-Pad nach Anspruch 3, wobei der Bonddraht beim Bonden eine Kontaktfläche in dem Kontaktfeld der getrennten Bereiche bildet, welche Kontaktfläche die wenigstens zwei voneinander getrennten elektrischen Bereiche elektrisch miteinander verbindet.
- Elektrisches Kontaktpad nach einem der vorhergehenden Ansprüche, wobei die Trennung der wenigstens zwei elektrisch voneinander getrennten Bereiche topographisch im Wesentlichen durch eine gerade Linie und/oder durch eine mäanderartig verlaufende Linie und/oder durch eine schlangenlinienförmig verlaufende Linie gezeigt ist.
- Vielzahl elektrischer Kontakt-Pads gemäß einem der vorhergehenden Ansprüche, wobei die mehreren elektrischen Kontakt-Pads mittels eines elektrischen Leiters in Kontaktgebieten miteinander elektrisch kontaktiert sind.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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DE102012019782.9A DE102012019782A1 (de) | 2012-10-09 | 2012-10-09 | Elektrisches Kontakt-Pad |
CN201310466705.8A CN103779301A (zh) | 2012-10-09 | 2013-10-09 | 电接触垫 |
US14/049,265 US20140096998A1 (en) | 2012-10-09 | 2013-10-09 | Electrical Contact Pad |
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DE102012019782.9A DE102012019782A1 (de) | 2012-10-09 | 2012-10-09 | Elektrisches Kontakt-Pad |
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DE102012019782A1 true DE102012019782A1 (de) | 2014-04-10 |
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DE102012019782.9A Ceased DE102012019782A1 (de) | 2012-10-09 | 2012-10-09 | Elektrisches Kontakt-Pad |
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US (1) | US20140096998A1 (de) |
CN (1) | CN103779301A (de) |
DE (1) | DE102012019782A1 (de) |
Families Citing this family (1)
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CN108321137A (zh) * | 2017-01-17 | 2018-07-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制作方法、电子装置 |
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DE19825009C1 (de) * | 1998-06-04 | 1999-11-25 | Siemens Ag | Prüfanordnung für Bondpad |
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JP2004228314A (ja) * | 2003-01-22 | 2004-08-12 | Renesas Technology Corp | パッドを有する半導体装置 |
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- 2013-10-09 US US14/049,265 patent/US20140096998A1/en not_active Abandoned
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JPH01217976A (ja) * | 1988-02-25 | 1989-08-31 | Nec Corp | 縦型電界効果トランジスタおよびその選別・組立方法 |
DE19825009C1 (de) * | 1998-06-04 | 1999-11-25 | Siemens Ag | Prüfanordnung für Bondpad |
US6426531B1 (en) * | 1999-05-26 | 2002-07-30 | Rohm Co., Ltd. | Semiconductor integrated circuit device and a method of assembly thereof |
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Also Published As
Publication number | Publication date |
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CN103779301A (zh) | 2014-05-07 |
US20140096998A1 (en) | 2014-04-10 |
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