DE102012019782A1 - Elektrisches Kontakt-Pad - Google Patents

Elektrisches Kontakt-Pad Download PDF

Info

Publication number
DE102012019782A1
DE102012019782A1 DE102012019782.9A DE102012019782A DE102012019782A1 DE 102012019782 A1 DE102012019782 A1 DE 102012019782A1 DE 102012019782 A DE102012019782 A DE 102012019782A DE 102012019782 A1 DE102012019782 A1 DE 102012019782A1
Authority
DE
Germany
Prior art keywords
contact pad
electrical
electrical contact
regions
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102012019782.9A
Other languages
English (en)
Inventor
Erwin Johann Vogl
Markus Zundel
Markus Winkler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE102012019782.9A priority Critical patent/DE102012019782A1/de
Priority to CN201310466705.8A priority patent/CN103779301A/zh
Priority to US14/049,265 priority patent/US20140096998A1/en
Publication of DE102012019782A1 publication Critical patent/DE102012019782A1/de
Ceased legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04034Bonding areas specifically adapted for strap connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05551Shape comprising apertures or cavities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1302Disposition
    • H01L2224/13026Disposition relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body
    • H01L2224/13028Disposition relative to the bonding area, e.g. bond pad, of the semiconductor or solid-state body the bump connector being disposed on at least two separate bonding areas, e.g. bond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001Core members of the connector
    • H01L2224/37099Material
    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754Coating
    • H01L2224/37599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45014Ribbon connectors, e.g. rectangular cross-section
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48647Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48824Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48799Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48847Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • H01L2224/85207Thermosonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Die vorliegende Erfindung bezieht sich auf ein Elektrisches Kontakt-Pad, wobei das Elektrische Kontakt-Pad in wenigstens zwei elektrisch voneinander getrennte Bereiche unterteilt ist.

Description

  • Die vorliegende Erfindung bezieht sich auf ein elektrisches Kontakt-Pad.
  • Die bei einem elektronischen Schaltkreis oder Halbleiter Gehäuse außen sichtbaren Anschlüsse (Pins) sind über Bonddrähte im Innern des Gehäuses mit den Chip-Anschlüssen (Bondinseln oder Pads) verbunden. Die Pads sind ihrerseits metallische Kontakte, welche mittels ohmscher Kontakte elektrisch mit dem Halbleiter verbunden sind. Die Aufgabe des Bonddrahtes ist die elektrische Verbindung zwischen der eigentlichen integrierten Schaltung bzw. dem nackten Bauteil und dem Gehäuse. Während und nach der Herstellung eines Chips ist es erforderlich den Chip zu testen. Beim Testen werden erforderlich Spezialmessungen am Chip durchgeführt, um seine fehlerfreie Arbeitsweise zu überprüfen. Hierfür sind häufig getrennte Potentiale zur Messung notwendig, die jedoch später im „regulären” Betrieb des Chips nicht mehr benötigt werden. Hierfür werden in der Regel zusätzliche Bond-Pads bereitgestellt, welche dann nach dem Testen beispielsweise mit einem Bonddraht verbunden und somit elektrisch kurzgeschlossen werden. Diese Lösung hat den Nachteil, dass wenigstens zwei Bond-Pads und ein Bonddraht bereitgestellt werden müssen. Dies bedingt einen höheren Bedarf an Chipfläche und höhere Materialkosten.
  • Daher ist es die Aufgabe der vorliegenden Erfindung diese Nachteile zu überwinden und somit ein elektrisches Kontakt-Pad bereitzustellen, durch das Chipfläche und Kosten eingespart werden kann.
  • Diese Aufgabe wird durch den Gegenstand des unabhängigen Anspruchs 1 gelöst. Die abhängigen Ansprüche beschreiben jeweils vorteilhafte Ausführungsformen der vorliegenden Erfindung.
  • In einer vorteilhaften Ausführungsform ist das elektrische Kontakt-Pad in wenigstens zwei elektrisch voneinander getrennte Bereiche unterteilt. Die Bereiche können zunächst auf unterschiedlichen Potentialen liegen. Durch Aufbringen eines Bonddrahtes oder Clips werden die Potentialhälften wieder kurzgeschlossen. Ein Vorteil dieser Lösung besteht darin, dass der Chip in seiner produktiven Anwendung keine zwei oder mehr Kontakt-Pads, auch als Bond-Pads bekannt, benötigt, die dann mittels eines Bonddrahtes kurzgeschlossen werden. Dadurch lässt sich die benötigte Chipfläche erheblich reduzieren und Materialkosten lassen sich einsparen.
  • In einer weiteren Ausführungsform sind die wenigstens zwei voneinander getrennten Bereiche des elektrischen Kontakt-Pads mittels eines elektrischen Leiters in Kontaktgebieten miteinander kontaktierbar. Kontaktgebiete bilden sich vorzugsweise entlang einer topographischen Trennungslinie der wenigstens zwei Bereiche des elektrischen Kontakt-Pads, da dort die getrennten Bereiche eng beieinander liegen und somit sehr leicht überbrückt werden können und somit elektrisch kontaktierbar sind.
  • In einer weiteren Ausführungsform ist der elektrische Leiter zur Kontaktierung der elektrisch getrennten Bereiche des elektrischen Kontakt-Pads ein Bonddraht. Bonddrähte sind leicht beschaffbar und kostengünstig herstellbar. Bonddrähte bestehen meist aus Gold oder auch legiertem oder dotiertem Gold, aber auch Aluminium mit (geringem) Siliziumanteil (AlSi1) und Kupfer finden Verwendung.
  • In einer weiteren Ausführungsform bildet der Bonddraht beim Bonden eine Kontaktfläche auf der Oberfläche des Kontakt-Pad, welche Kontaktfläche die wenigstens zwei voneinander getrennten elektrischen Bereiche elektrisch miteinander verbindet. Die verschiedenen Verfahrensvarianten bei der sequentiellen Kontaktierung bzw. Bonden von Halbleiterbauelementen können das Thermokompressionsbonden (TC-Bonden), das Thermosonic-Ball-Wedge-Bonden (TS-Bonden) und/oder das Ultraschall-Wedge-Wedge-Bonden (US-Bonden) sein. Die zuerst genannten Verfahren arbeiten in der Regel mit Golddraht, das US-Bonden kann mit Aluminium bzw. Aluminium-Silizium-Draht (AlSi1) durchgeführt werden. Eine weitere Vorteilhafte Variante des Bondens ist das Bonden im Double Stich Verfahren. Dabei wird der Bonddraht an einem Kontakt beispielsweise eines IC's befestigt, wird dann zu einem weiteren Kontakt des IC's gezogen und dort ebenfalls befestigt und wird dann vom IC weg auf einen äußeren Kontakt gezogen und befestigt.
  • In einer weiteren Ausführungsform sind die wenigstens zwei elektrisch voneinander getrennten Bereiche topographisch durch eine gerade Linie und/oder durch eine mäanderartig bzw. schlangenlinienförmig verlaufende Linie innerhalb der kein leitendes Material angeordnet ist, voneinander elektrisch getrennt. Diese Anordnung bietet den Vorteil, dass die Anzahl der potentiellen Kontaktgebiete zwischen den Bereichen des elektrischen Kontakt-Pads mittels des Linienverlaufs des Trennbereiches (keine Metallisierung, also nichtleitend) einstellbar ist.
  • 1 zeigt ein elektrisches Kontakt-Pad, wobei eine Linie die elektrische Trennung zwischen den zwei Bereichen zeigt. Dabei ist die Linie beispielsweise gerade ausgeführt, oder zusätzlich mit einer Kurve.
  • 2 zeigt ein elektrisches Kontakt-Pad, wobei eine Linie die elektrische Trennung zwischen den zwei Bereichen zeigt.
  • Dabei ist die Linie beispielsweise kurvenförmig mit mehreren Kurven ausgeführt.
  • 3 unterscheidet sich im Wesentlichen von den 1 und 2 dadurch, dass in dieser Ausführungsform die Linie mäanderförmig oder schlangenförmig mit sehr vielen Windungen und/oder Kurven ausgeführt ist.
  • Ausführungsbeispiele der Erfindung werden nachfolgend, Bezug nehmend auf die beiliegenden Figuren, näher erläutert. Die Erfindung ist jedoch nicht auf die konkret beschriebenen Ausführungsformen beschränkt, sondern kann in geeigneter Weise modifiziert und abgewandelt werden. Es liegt im Rahmen der Erfindung, einzelnen Merkmale und Merkmalskombinationen einer Ausführungsform mit Merkmalen und Merkmalskombinationen einer anderen Ausführungsform geeignet zu kombinieren, um zu weiteren erfindungsgemäßen Ausführungsformen zu gelangen.
  • Bevor im Folgenden die Ausführungsbeispiele der vorliegenden Erfindung an Hand der Figuren näher erläutert werden, wird darauf hingewiesen, dass gleiche Elemente in den Figuren mit den gleichen oder ähnlichen Bezugszeichen versehen sind und dass eine wiederholte Beschreibung dieser Elemente weggelassen wird. Ferner sind die Figuren nicht notwendigerweise maßstabsgerecht. Der Schwerpunkt liegt vielmehr auf der Erläuterung des Grundprinzips.
  • 1 zeigt ein elektrisches Kontakt-Pad 100, wobei eine Linie 150 die elektrische Trennung zwischen den zwei Bereichen 110, 120 zeigt. Die Trennung des elektrischen Kontakt Pad erfolgt vorteilhafterweise im Front-End bei der Fertigung von integrierten Schaltkreisen. Dort können dann an den getrennten Kontakt-Pads 100 Spezialmessungen durchgeführt werden. Da diese Spezialmessungen später nicht mehr durchgeführt werden müssen, können die Bereiche 110, 120 des elektrischen Kontakt Pad's 100 wieder kurzgeschlossen werden. Dabei können die Bereiche 110, 120 des elektrischen Kontakt-Pad's 100 auf gleichen oder unterschiedlichen Potentialen liegen, die dann kurzgeschlossen werden. Die Linie 150 oder auch als Spalt bezeichenbar, zeigt das Fehlen eines leitenden Materials an. Vorzugsweise kann dieser Bereich Polyimide, Imide oder Oxide aufweisen oder mit Mold Compound zumindest teilweise gefüllt sein. Alternativ kann dieser Zwischenbereich oder Spaltbereich einen Hohlraum aufweisen. Die Linie 150 bzw. der Spalt kann vorzugsweise eine Breite von einigen nm bis zu 100 μm aufweisen. Vorteilhafterweise kann die Linie 150 eine Breite im Bereich von 1 μm bis 2 μm aufweisen, oder die Linie 150 kann eine Breite im Bereich von 2 μm bis 5 μm aufweisen, oder die Linie 150 kann eine Breite im Bereich von 5 μm bis 10 μm aufweisen, oder die Linie 150 kann eine Breite im Bereich von 10 μm bis 20 μm aufweisen, oder die Linie 150 kann eine Breite im Bereich von 20 μm bis 50 μm aufweisen, oder die Linie 150 kann eine Breite im Bereich von über 50 μm aufweisen. Dabei ist die Linie beispielsweise gerade ausgeführt, oder zusätzlich mit einer Kurve. Ferner zeigt die 1 ein Beispiel eines Kontaktgebietes 300 zur elektrischen Kontaktierung der beiden Bereiche 110, 120 des Kontakt-Pads. Die Kontaktgebiete 300 erstrecken sich entlang des Linienverlaufes 150 und können dabei unterschiedliche Größen und/oder Formen aufweisen. In dieser Ausführungsform werden nur wenige potentiellen Kontaktgebiete 300 bereitgestellt. Die Gefahr, dass ein Bonddraht außerhalb des Kontaktgebietes gebondet wird 305 und es somit die Bereiche 110, 120 des elektrischen Kontakt-Pads nicht elektrisch kontaktiert sind, ist hoch. Bonddraht bzw. Clip's weisen meist Gold oder auch legiertes oder dotiertes Gold auf, aber auch Aluminium mit Siliziumanteil (AlSi1) und Kupfer finden Verwendung. Dabei erlauben dünnere Bonddrähte engere Pad-Geometrien und daher höhere Packungsdichten. Im Bereich der Leistungselektronik kommen reine (99,99% Al-Anteil und höher) Aluminium-Materialien zur Anwendung, bei diskreten Halbleitern (Dioden, Transistoren) wird zumeist hochreines Gold verwendet (Kupferdrähte befinden sich zurzeit in der Testphase). Bei Leistungshalbleitern zur Verwendung hoher Stromlasten werden Dickdrähte mit Durchmesser zwischen 100 μm und 500 μm oder Dickdraht-Bändchen verwendet. Reicht das nicht aus, wird mehrfach gebondet.
  • 2 zeigt ein elektrisches Kontakt-Pad 100, wobei eine Linie 150 die Trennung zwischen den zwei Bereichen 110, 120 zeigt. Dabei ist die Linie 150 beispielsweise kurvenförmig mit mehreren Kurven ausgeführt. Ferner zeigt die 2 ein Beispiel eines Kontaktgebietes zur elektrischen Kontaktierung der beiden Bereiche 110, 120 des Kontakt-Pads. Kontakt-Pads können vorteilhafterweise Kupfer, Kupferlegierungen, Gold, Goldlegierungen, Aluminium, Aluminiumlegierungen aufweisen. Die Kontaktgebiete 300 erstrecken sich auch hier entlang des Linienverlaufes 150. In dieser Ausführungsform sind wesentlich mehr potentielle Kontaktgebiete 300 zur elektrischen Kontaktierung der Bereiche 110, 120 bereitgestellt. Die Gefahr, dass ein Bonddraht keinen Kurzschluss 305 zwischen den beiden Bereichen 110, 120 des elektrischen Kontakt-Pads verursacht ist reduziert.
  • 3 unterscheidet sich im Wesentlichen von den 1 und 2 dadurch, dass in dieser Ausführungsform die Linie 150 mäanderförmig oder schlangen förmig mit sehr vielen Windungen und/oder Kurven ausgeführt ist. Die Kontaktgebiete 300 erstrecken sich auch hier entlang des Linienverlaufes 150. In dieser Ausführungsform ist somit die Anzahl der potentielle Kontaktgebiete 300 zur elektrischen Kontaktierung der Bereiche 110, 120 nahezu maximiert. Die Gefahr, dass ein Bonddraht keinen Kurzschluss zwischen den beiden Bereichen 110, 120 des elektrischen Kontakt-Pads verursacht ist nahezu minimiert. Auch das Kontaktgebiet 310 bewirkt eine elektrische Kontaktierung der Bereiche 110, 120. Besonders vorteilhaft ist das Benutzen eines elektrischen Kontakt-Pads, welches zumindest zur Hälfte schon auf dem angezielten Potential liegt, beispielsweise Sourcepotenzial bei einem MOSFET und als Source-Sensor Abgriff bereits am Chip installiert ist. Nach der elektrischen Kontaktierung der Bereiche 110, 120 liegt der gesamte Bereich auf Sourcepotential. Somit sind keine zusätzlichen Chipflächen zur Kontaktierung notwendig. Das hier beschriebene in Bereiche unterteilte Kontakt-Pad kann ferner vorteilhafterweise dort eingesetzt werden, wo verschiedene Metallleitungen miteinander elektrisch kurzgeschlossen werden sollen. Insbesondere bei Sensorstrukturen die auf einem Chip realisiert sind (ON-Chip), bei mehreren Elektroden im Trench (3 Polys oder mehr pro Trench) oder bei gezielt gewollten Verbindungen von Trench zu Trench können elektrische Verbindungen mittels der elektrischer Kontaktierung von Bereichen 110, 120 eines elektrischen Kontakt Pads 100 geschaffen werden. Das elektrische Kontakt Pad 100 mit elektrisch voneinander getrennten Bereichen 110, 120 kann bei den unterschiedlichsten Bauelementarten Verwendung finden, beispielsweise bei Dioden, MOS, IGBT's, IC's aber auch bei lateral leitenden MOS oder planaren Transistoren oder bei Trench Transistoren mit einem oder mehreren Elektroden im Trench. Auch bei Dual-Poly und Trench MOSFETs ist der Einsatz bzw. die Verwendung besonders vorteilhaft.

Claims (6)

  1. Elektrisches Kontakt-Pad, wobei das elektrische Kontakt-Pad wenigstens zwei elektrisch voneinander getrennte Bereiche aufweist.
  2. Elektrisches Kontakt-Pad nach Anspruch 1, wobei die wenigstens zwei voneinander getrennten Bereiche mittels eines elektrischen Leiters in Kontaktgebieten miteinander kontaktiert sind.
  3. Elektrisches Kontakt-Pad nach Anspruch 2, wobei der elektrische Leiter ein Bonddraht oder ein Clip ist.
  4. Elektrisches Kontakt-Pad nach Anspruch 3, wobei der Bonddraht beim Bonden eine Kontaktfläche in dem Kontaktfeld der getrennten Bereiche bildet, welche Kontaktfläche die wenigstens zwei voneinander getrennten elektrischen Bereiche elektrisch miteinander verbindet.
  5. Elektrisches Kontaktpad nach einem der vorhergehenden Ansprüche, wobei die Trennung der wenigstens zwei elektrisch voneinander getrennten Bereiche topographisch im Wesentlichen durch eine gerade Linie und/oder durch eine mäanderartig verlaufende Linie und/oder durch eine schlangenlinienförmig verlaufende Linie gezeigt ist.
  6. Vielzahl elektrischer Kontakt-Pads gemäß einem der vorhergehenden Ansprüche, wobei die mehreren elektrischen Kontakt-Pads mittels eines elektrischen Leiters in Kontaktgebieten miteinander elektrisch kontaktiert sind.
DE102012019782.9A 2012-10-09 2012-10-09 Elektrisches Kontakt-Pad Ceased DE102012019782A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE102012019782.9A DE102012019782A1 (de) 2012-10-09 2012-10-09 Elektrisches Kontakt-Pad
CN201310466705.8A CN103779301A (zh) 2012-10-09 2013-10-09 电接触垫
US14/049,265 US20140096998A1 (en) 2012-10-09 2013-10-09 Electrical Contact Pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012019782.9A DE102012019782A1 (de) 2012-10-09 2012-10-09 Elektrisches Kontakt-Pad

Publications (1)

Publication Number Publication Date
DE102012019782A1 true DE102012019782A1 (de) 2014-04-10

Family

ID=50336798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012019782.9A Ceased DE102012019782A1 (de) 2012-10-09 2012-10-09 Elektrisches Kontakt-Pad

Country Status (3)

Country Link
US (1) US20140096998A1 (de)
CN (1) CN103779301A (de)
DE (1) DE102012019782A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108321137A (zh) * 2017-01-17 2018-07-24 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法、电子装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2004417A (en) * 1977-09-16 1979-03-28 Nippon Electric Co Semiconductor devices
JPH01217976A (ja) * 1988-02-25 1989-08-31 Nec Corp 縦型電界効果トランジスタおよびその選別・組立方法
DE19825009C1 (de) * 1998-06-04 1999-11-25 Siemens Ag Prüfanordnung für Bondpad
US6426531B1 (en) * 1999-05-26 2002-07-30 Rohm Co., Ltd. Semiconductor integrated circuit device and a method of assembly thereof
EP1681719A2 (de) * 2005-01-13 2006-07-19 Delphi Technologies, Inc. Halbleiterelement mit geteilter Anschlußfläche
US20070057350A1 (en) * 2005-09-13 2007-03-15 Ralf Otremba Semiconductor component and method of assembling the same
US20090189298A1 (en) * 2008-01-28 2009-07-30 Fu-Chung Wu Bonding pad structure and debug method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947184A (en) * 1974-11-14 1976-03-30 Xerox Corporation Imaging method
JPH04318944A (ja) * 1991-04-18 1992-11-10 Nec Corp 樹脂封止型半導体装置
JP2825085B2 (ja) * 1996-08-29 1998-11-18 日本電気株式会社 半導体装置の実装構造、実装用基板および実装状態の検査方法
JP3269475B2 (ja) * 1998-02-16 2002-03-25 日本電気株式会社 半導体装置
KR100318257B1 (ko) * 1998-11-07 2002-04-22 박종섭 인쇄회로기판및그의신호배선방법
US6102550A (en) * 1999-02-16 2000-08-15 Photronix, Llc Bracket assembly for fluorescent lighting fixture having removable, high-frequency power output ballast
US7271465B2 (en) * 2002-04-24 2007-09-18 Qualcomm Inc. Integrated circuit with low-loss primary conductor strapped by lossy secondary conductor
JP2004228314A (ja) * 2003-01-22 2004-08-12 Renesas Technology Corp パッドを有する半導体装置
US7391053B2 (en) * 2004-05-28 2008-06-24 Toshiba Matsushita Display Technology Co., Ltd. Inspection substrate for display device
DE112005003614B4 (de) * 2005-07-28 2014-08-21 Infineon Technologies Ag Halbleiterbaugruppe für ein Schaltnetzteil und Verfahren zu dessen Montage
ATE522842T1 (de) * 2007-04-17 2011-09-15 Koninkl Philips Electronics Nv Strahlformungsvorrichtung
US8067834B2 (en) * 2007-08-21 2011-11-29 Hvvi Semiconductors, Inc. Semiconductor component
WO2009093523A1 (ja) * 2008-01-24 2009-07-30 Alps Electric Co., Ltd. 磁気センサ及びその製造方法
WO2010086033A1 (en) * 2009-01-30 2010-08-05 Interuniversitair Microelektronica Centrum Vzw Stretchable electronic device
US8696159B2 (en) * 2010-09-20 2014-04-15 Cree, Inc. Multi-chip LED devices
TWI432561B (zh) * 2010-12-27 2014-04-01 私立中原大學 液晶複合材料及光電液晶顯示元件

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2004417A (en) * 1977-09-16 1979-03-28 Nippon Electric Co Semiconductor devices
JPH01217976A (ja) * 1988-02-25 1989-08-31 Nec Corp 縦型電界効果トランジスタおよびその選別・組立方法
DE19825009C1 (de) * 1998-06-04 1999-11-25 Siemens Ag Prüfanordnung für Bondpad
US6426531B1 (en) * 1999-05-26 2002-07-30 Rohm Co., Ltd. Semiconductor integrated circuit device and a method of assembly thereof
EP1681719A2 (de) * 2005-01-13 2006-07-19 Delphi Technologies, Inc. Halbleiterelement mit geteilter Anschlußfläche
US20070057350A1 (en) * 2005-09-13 2007-03-15 Ralf Otremba Semiconductor component and method of assembling the same
US20090189298A1 (en) * 2008-01-28 2009-07-30 Fu-Chung Wu Bonding pad structure and debug method thereof

Also Published As

Publication number Publication date
CN103779301A (zh) 2014-05-07
US20140096998A1 (en) 2014-04-10

Similar Documents

Publication Publication Date Title
DE102007016061B4 (de) Modul mit Halbleiterchip und Verfahren
DE102014109816B4 (de) Leistungshalbleitermodul und System mit mindestens zwei Leistungshalbleitermodulen
DE102016110235B4 (de) Halbleitervorrichtungen mit Clipvorrichtung und Verfahren zum Fertigen einer Halbleitervorrichtung
DE102005039165B4 (de) Draht- und streifengebondetes Halbleiterleistungsbauteil und Verfahren zu dessen Herstellung
DE102015122259B4 (de) Halbleitervorrichtungen mit einer porösen Isolationsschicht
DE102020108851B4 (de) Die-zu-leiter-verbindung in der verkapselung eines gegossenen halbleitergehäuses und verfahren zu dessen herstellung
DE102011053149B4 (de) Die-Struktur, Die-Anordnung und Verfahren zum Prozessieren eines Dies
DE102015104996B4 (de) Halbleitervorrichtungen mit Steuer- und Lastleitungen von entgegengesetzter Richtung
DE102014104497B4 (de) Halbleitergehäuse mit mehreren ebenen und verfahren zu deren herstellung
DE102015103555B4 (de) Elektronisches Bauteil
DE102020109692A1 (de) Quad-gehäuse mit an anschlüssen an der oberseite eines halbleiterchips angebrachten leitenden clips
DE10336747A1 (de) Halbleiterbauelementanordnung mit einer Nanopartikel aufweisenden Isolationsschicht
DE102011113255B4 (de) Chipmodule und Verfahren zur Herstellung eines Chipmoduls
DE102004047306B4 (de) Leistungs-Halbleiterbauteil mit mehreren Bauteilkomponenten
DE102017108172B4 (de) SMD-Package und Verfahren zur Herstellung eines SMD-Packages
DE102013110404B4 (de) Chipanordnungen und ein Verfahren zum Herstellen einer Chipanordnung
DE102013103351A1 (de) Elektronikmodul
DE102015108253A1 (de) Elektronisches Modul und Verfahren zum Herstellen desselben
DE102018207308B4 (de) Halbleiterbauteil mit integriertem shunt-widerstand und verfahren zu dessen herstellung
DE102012019782A1 (de) Elektrisches Kontakt-Pad
EP2133915A1 (de) Halbleiteranordnung mit besonders gestalteten Bondleitungen und Verfahren zum Herstellen einer solchen Anordnung
DE112018005048T5 (de) Chip mit integrierter schaltung (ic), der zwischen einem offset-leiterrahmen-chip-befestigungspad und einem diskreten chip-befestigungspad befestigt ist
DE102016122963B4 (de) Halbleitervorrichtung mit einem bidirektionalen Schalter
DE112015002596T5 (de) Halbleitervorrichtung
DE102020108846B4 (de) Chip-zu-chip-verbindung in der verkapselung eines vergossenen halbleitergehäuses und verfahren zu dessen herstellung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final