DE102011100241A8 - Nitridhalbleiterbauteil - Google Patents
Nitridhalbleiterbauteil Download PDFInfo
- Publication number
- DE102011100241A8 DE102011100241A8 DE102011100241A DE102011100241A DE102011100241A8 DE 102011100241 A8 DE102011100241 A8 DE 102011100241A8 DE 102011100241 A DE102011100241 A DE 102011100241A DE 102011100241 A DE102011100241 A DE 102011100241A DE 102011100241 A8 DE102011100241 A8 DE 102011100241A8
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- DE
- Germany
- Prior art keywords
- nitridhalbleiterbauteil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-107296 | 2010-05-07 | ||
JP2010-107298 | 2010-05-07 | ||
JP2010107296A JP5706102B2 (ja) | 2010-05-07 | 2010-05-07 | 窒化物半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102011100241A1 DE102011100241A1 (de) | 2011-12-01 |
DE102011100241A8 true DE102011100241A8 (de) | 2012-03-01 |
Family
ID=44887870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102011100241A Withdrawn DE102011100241A1 (de) | 2010-05-07 | 2011-05-02 | Nitride Semiconductor Device |
Country Status (4)
Country | Link |
---|---|
US (1) | US8405064B2 (de) |
JP (1) | JP5706102B2 (de) |
CN (1) | CN102237403A (de) |
DE (1) | DE102011100241A1 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI514568B (zh) * | 2009-04-08 | 2015-12-21 | Efficient Power Conversion Corp | 增強模式氮化鎵高電子遷移率電晶體元件及其製造方法 |
EP2581929A4 (de) | 2010-06-08 | 2014-04-02 | Ngk Insulators Ltd | Epitaktisches substrat und verfahren zur herstellung des epitaktischen substrats |
JP5781292B2 (ja) * | 2010-11-16 | 2015-09-16 | ローム株式会社 | 窒化物半導体素子および窒化物半導体パッケージ |
JP5919703B2 (ja) * | 2011-06-24 | 2016-05-18 | サンケン電気株式会社 | 半導体装置 |
JP5319810B2 (ja) * | 2012-03-08 | 2013-10-16 | 株式会社東芝 | 窒化物半導体層の製造方法 |
JP6239499B2 (ja) * | 2012-03-16 | 2017-11-29 | 古河電気工業株式会社 | 半導体積層基板、半導体素子、およびその製造方法 |
CN102664188B (zh) * | 2012-05-10 | 2014-07-23 | 电子科技大学 | 一种具有复合缓冲层的氮化镓基高电子迁移率晶体管 |
JP5892014B2 (ja) * | 2012-09-14 | 2016-03-23 | 沖電気工業株式会社 | 窒化物半導体装置及びその作製条件特定方法 |
JP2014072429A (ja) * | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 半導体装置 |
JP5462377B1 (ja) * | 2013-01-04 | 2014-04-02 | Dowaエレクトロニクス株式会社 | Iii族窒化物エピタキシャル基板およびその製造方法 |
US8633569B1 (en) * | 2013-01-16 | 2014-01-21 | Translucent, Inc. | AlN inter-layers in III-N material grown on REO/silicon substrate |
CN105431931A (zh) * | 2013-07-30 | 2016-03-23 | 住友化学株式会社 | 半导体基板以及半导体基板的制造方法 |
TWI574407B (zh) * | 2013-08-16 | 2017-03-11 | 晶元光電股份有限公司 | 半導體功率元件 |
JP2015060987A (ja) * | 2013-09-19 | 2015-03-30 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6183145B2 (ja) * | 2013-10-23 | 2017-08-23 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP6534791B2 (ja) | 2013-12-16 | 2019-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2015181648A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | An optoelectronic device |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
KR102427203B1 (ko) | 2014-05-27 | 2022-07-29 | 실라나 유브이 테크놀로지스 피티이 리미티드 | n-형 및 p-형 초격자를 포함하는 전자 디바이스 |
WO2015181657A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | Advanced electronic device structures using semiconductor structures and superlattices |
FR3028670B1 (fr) * | 2014-11-18 | 2017-12-22 | Commissariat Energie Atomique | Structure semi-conductrice a couche de semi-conducteur du groupe iii-v ou ii-vi comprenant une structure cristalline a mailles cubiques ou hexagonales |
US10109736B2 (en) * | 2015-02-12 | 2018-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Superlattice buffer structure for gallium nitride transistors |
TWI552948B (zh) * | 2015-06-05 | 2016-10-11 | 環球晶圓股份有限公司 | 半導體元件 |
JP2017054955A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社東芝 | 半導体装置 |
CN105609603A (zh) * | 2016-03-02 | 2016-05-25 | 厦门乾照光电股份有限公司 | 一种具有复合结构的氮化物缓冲层 |
CN105762247A (zh) * | 2016-03-02 | 2016-07-13 | 厦门乾照光电股份有限公司 | 一种具有复合结构的氮化物缓冲层制作方法 |
FR3049762B1 (fr) * | 2016-04-05 | 2022-07-29 | Exagan | Structure semi-conductrice a base de materiau iii-n |
CA3132525A1 (en) * | 2016-05-26 | 2017-11-30 | Robbie Jorgenson | Group iiia nitride growth method and system |
US20200251563A1 (en) * | 2016-06-14 | 2020-08-06 | Chih-Shu Huang | Epitaxial structure of ga-face group iii nitride, active device, and method for fabricating the same |
US9954089B2 (en) | 2016-06-20 | 2018-04-24 | Infineon Technologies Americas Corp. | Low dislocation density III-nitride semiconductor component |
CN106653839A (zh) * | 2016-09-27 | 2017-05-10 | 华南理工大学 | 具有调制碳掺杂氮化镓高阻层的hemt结构及其制备方法 |
CN108346694B (zh) * | 2017-01-23 | 2020-10-02 | Imec 非营利协会 | 用于电力电子器件的基于iii-n的基材及其制造方法 |
TWI762467B (zh) * | 2017-02-22 | 2022-05-01 | 晶元光電股份有限公司 | 氮化物半導體磊晶疊層結構及其功率元件 |
TWI649873B (zh) * | 2017-07-26 | 2019-02-01 | 財團法人工業技術研究院 | 三族氮化物半導體結構 |
EP3451364B1 (de) * | 2017-08-28 | 2020-02-26 | Siltronic AG | Heteroepitaxialwafer und verfahren zur herstellung eines heteroepitaxialwafers |
EP3714482A1 (de) * | 2017-11-22 | 2020-09-30 | IQE Plc. | Spannungsausgeglichene halbleiterstruktur |
JP6812333B2 (ja) * | 2017-12-08 | 2021-01-13 | エア・ウォーター株式会社 | 化合物半導体基板 |
CN108732652A (zh) * | 2018-05-25 | 2018-11-02 | 厦门大学 | 一种氮化物光子晶体及其制备方法 |
EP3576132A1 (de) * | 2018-05-28 | 2019-12-04 | IMEC vzw | Iii-n-halbleiterstruktur und verfahren zur formung einer iii-n-halbleiterstruktur |
CN109616401B (zh) * | 2018-10-17 | 2021-03-02 | 华灿光电(苏州)有限公司 | 一种AlN模板及其制备方法、发光二极管外延片 |
DE102018132263A1 (de) * | 2018-12-14 | 2020-06-18 | Aixtron Se | Verfahren zum Abscheiden einer Heterostruktur und nach dem Verfahren abgeschiedene Heterostruktur |
CN112820773A (zh) * | 2019-11-18 | 2021-05-18 | 联华电子股份有限公司 | 一种高电子迁移率晶体管 |
TWI735212B (zh) * | 2020-04-24 | 2021-08-01 | 環球晶圓股份有限公司 | 具有超晶格疊層體的磊晶結構 |
WO2022141190A1 (en) | 2020-12-30 | 2022-07-07 | Innoscience (suzhou) Semiconductor Co., Ltd. | Epitaxial layers with discontinued aluminium content for iii-nitride semiconductor |
CN113793868B (zh) * | 2021-08-27 | 2023-05-12 | 聚能晶源(青岛)半导体材料有限公司 | GaN基HEMT器件、器件外延结构及其制备方法 |
CN114361302B (zh) * | 2022-03-17 | 2022-06-17 | 江西兆驰半导体有限公司 | 一种发光二极管外延片、发光二极管缓冲层及其制备方法 |
CN116581018B (zh) * | 2023-07-12 | 2023-10-20 | 江西兆驰半导体有限公司 | 复合缓冲层及其制备方法、外延片、高电子迁移率晶体管 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100753147B1 (ko) * | 1998-03-12 | 2007-08-30 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자 |
JP2000277441A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 半導体構造とそれを備えた半導体素子及び結晶成長方法 |
JP2003059948A (ja) | 2001-08-20 | 2003-02-28 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
KR100641989B1 (ko) * | 2003-10-15 | 2006-11-02 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 |
JP4826703B2 (ja) * | 2004-09-29 | 2011-11-30 | サンケン電気株式会社 | 半導体素子の形成に使用するための板状基体 |
JP5309451B2 (ja) | 2007-02-19 | 2013-10-09 | サンケン電気株式会社 | 半導体ウエーハ及び半導体素子及び製造方法 |
JP5309452B2 (ja) | 2007-02-28 | 2013-10-09 | サンケン電気株式会社 | 半導体ウエーハ及び半導体素子及び製造方法 |
JP2008311355A (ja) | 2007-06-13 | 2008-12-25 | Rohm Co Ltd | 窒化物半導体素子 |
JP5466505B2 (ja) * | 2007-06-27 | 2014-04-09 | ルネサスエレクトロニクス株式会社 | 電界効果トランジスタ、ならびに、該電界効果トランジスタの作製に供される多層エピタキシャル膜 |
JP5117283B2 (ja) * | 2008-05-29 | 2013-01-16 | 古河電気工業株式会社 | 半導体電子デバイス |
JP5383059B2 (ja) | 2008-02-26 | 2014-01-08 | ローム株式会社 | 電界効果トランジスタ |
JP2010107296A (ja) | 2008-10-29 | 2010-05-13 | Yokogawa Electric Corp | 半導体試験装置、プローバおよびヘッド旋回装置 |
EP2538434B1 (de) * | 2010-02-16 | 2018-05-02 | NGK Insulators, Ltd. | Epitaktisches substrat und herstellungsverfahren dafür |
JPWO2011135963A1 (ja) * | 2010-04-28 | 2013-07-18 | 日本碍子株式会社 | エピタキシャル基板およびエピタキシャル基板の製造方法 |
-
2010
- 2010-05-07 JP JP2010107296A patent/JP5706102B2/ja active Active
-
2011
- 2011-04-28 CN CN2011101129923A patent/CN102237403A/zh active Pending
- 2011-05-02 DE DE102011100241A patent/DE102011100241A1/de not_active Withdrawn
- 2011-05-04 US US13/067,042 patent/US8405064B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102011100241A1 (de) | 2011-12-01 |
JP5706102B2 (ja) | 2015-04-22 |
US8405064B2 (en) | 2013-03-26 |
US20110272665A1 (en) | 2011-11-10 |
CN102237403A (zh) | 2011-11-09 |
JP2011238685A (ja) | 2011-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20131203 |