DE102011087561B4 - Verfahren zur Herstellung einer elektronischen Vorrichtung und dielektrische Zusammensetzungen - Google Patents

Verfahren zur Herstellung einer elektronischen Vorrichtung und dielektrische Zusammensetzungen Download PDF

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Publication number
DE102011087561B4
DE102011087561B4 DE102011087561.1A DE102011087561A DE102011087561B4 DE 102011087561 B4 DE102011087561 B4 DE 102011087561B4 DE 102011087561 A DE102011087561 A DE 102011087561A DE 102011087561 B4 DE102011087561 B4 DE 102011087561B4
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Prior art keywords
dielectric
dielectric material
silane group
composition
phase
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Expired - Fee Related
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DE102011087561.1A
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German (de)
English (en)
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DE102011087561A1 (de
Inventor
Yiliang Wu
Ping Liu
Anthony Wiggelsworth
Nan-Xing Hu
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Xerox Corp
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Xerox Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/306—Polyimides or polyesterimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/42—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes polyesters; polyethers; polyacetals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H01B3/447—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from acrylic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
DE102011087561.1A 2010-12-01 2011-12-01 Verfahren zur Herstellung einer elektronischen Vorrichtung und dielektrische Zusammensetzungen Expired - Fee Related DE102011087561B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/957,445 US8623447B2 (en) 2010-12-01 2010-12-01 Method for coating dielectric composition for fabricating thin-film transistors
US12/957,445 2010-12-01

Publications (2)

Publication Number Publication Date
DE102011087561A1 DE102011087561A1 (de) 2012-06-06
DE102011087561B4 true DE102011087561B4 (de) 2023-10-05

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Country Status (3)

Country Link
US (2) US8623447B2 (https=)
JP (1) JP5775426B2 (https=)
DE (1) DE102011087561B4 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103325943A (zh) * 2013-05-16 2013-09-25 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法
WO2015076358A1 (ja) * 2013-11-21 2015-05-28 株式会社ニコン 配線パターンの製造方法およびトランジスタの製造方法
KR101680433B1 (ko) * 2014-11-25 2016-11-29 순천대학교 산학협력단 롤대롤 그라비아 인쇄기반 박막트랜지스터 제조방법, 박막트랜지스터 백플랜 제조방법, 백플랜 압력센서 및 스마트 장판의 제조방법
US10115785B1 (en) 2017-06-01 2018-10-30 Xerox Corporation Memory cells and devices
JP6926939B2 (ja) * 2017-10-23 2021-08-25 東京エレクトロン株式会社 半導体装置の製造方法

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6621099B2 (en) 2002-01-11 2003-09-16 Xerox Corporation Polythiophenes and devices thereof
US6706464B2 (en) 1998-12-15 2004-03-16 International Business Machines Corporation Method of fabricating circuitized structures
US6770904B2 (en) 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US6774393B2 (en) 2002-06-11 2004-08-10 Xerox Corporation Field effect transistor
DE10329262B3 (de) 2003-06-23 2004-12-16 Infineon Technologies Ag Verfahren zur Behandlung eines Substrates und ein Halbleiterbauelement
DE10330022A1 (de) 2003-07-03 2005-01-20 Degussa Ag Verfahren zur Herstellung von Iow-k dielektrischen Filmen
DE10340609A1 (de) 2003-08-29 2005-04-07 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht
US6949762B2 (en) 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
DE60032696T2 (de) 1999-09-15 2007-10-04 Shipley Co., L.L.C., Marlborough Dielektrische Zusammensetzung
JP2007258663A (ja) 2006-02-22 2007-10-04 Tokyo Ohka Kogyo Co Ltd 有機半導体素子の製造方法及びそれに用いる絶縁膜形成用組成物
US7282735B2 (en) 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
US20080237581A1 (en) 2007-04-02 2008-10-02 Xerox Corporation Device with phase-separated dielectric structure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69532491T2 (de) * 1994-07-29 2004-12-02 World Properties, Inc., Lincolnwood Fluorpolymer-Verbundmaterialien mit zwei oder mehreren keramischen Füllern zur unabhängigen Kontrolle über Dimensionsstabilität und Dielektrizitätskonstante
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US7015256B2 (en) 2002-01-28 2006-03-21 Jsr Corporation Composition for forming photosensitive dielectric material, and transfer film, dielectric material and electronic parts using the same
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP4272441B2 (ja) * 2003-02-05 2009-06-03 株式会社リコー 有機能動素子及びそれを有する表示素子
US7223517B2 (en) * 2003-08-05 2007-05-29 International Business Machines Corporation Lithographic antireflective hardmask compositions and uses thereof
DE102004005247A1 (de) * 2004-01-28 2005-09-01 Infineon Technologies Ag Imprint-Lithographieverfahren
WO2005097883A2 (en) 2004-03-26 2005-10-20 King Industries, Inc. Method of producing a crosslinked coating in the manufacture of integrated circuits
WO2008047654A1 (en) * 2006-10-12 2008-04-24 Sekisui Chemical Co., Ltd. Composition for formation of film, method for production of patterned film, and insulation film for electronic device
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
US20090093114A1 (en) 2007-10-09 2009-04-09 Sean David Burns Method of forming a dual-damascene structure using an underlayer
US8859673B2 (en) * 2008-02-25 2014-10-14 Honeywell International, Inc. Processable inorganic and organic polymer formulations, methods of production and uses thereof
US8154080B2 (en) * 2008-12-05 2012-04-10 Xerox Corporation Dielectric structure having lower-k and higher-k materials
JP5533232B2 (ja) * 2009-06-29 2014-06-25 Ｊｓｒ株式会社 ポジ型感放射線性組成物、硬化膜、層間絶縁膜、層間絶縁膜の形成方法、表示素子、及び層間絶縁膜形成用のシロキサンポリマー
US8163658B2 (en) * 2009-08-24 2012-04-24 International Business Machines Corporation Multiple patterning using improved patternable low-k dielectric materials
KR20120057467A (ko) * 2010-11-26 2012-06-05 삼성전자주식회사 실리콘 변성 그룹을 갖는 감광성 폴리이미드, 이를 포함하는 접착 조성물 및 반도체 패키지

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6706464B2 (en) 1998-12-15 2004-03-16 International Business Machines Corporation Method of fabricating circuitized structures
DE60032696T2 (de) 1999-09-15 2007-10-04 Shipley Co., L.L.C., Marlborough Dielektrische Zusammensetzung
US6949762B2 (en) 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
US6621099B2 (en) 2002-01-11 2003-09-16 Xerox Corporation Polythiophenes and devices thereof
US6770904B2 (en) 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6774393B2 (en) 2002-06-11 2004-08-10 Xerox Corporation Field effect transistor
DE10329262B3 (de) 2003-06-23 2004-12-16 Infineon Technologies Ag Verfahren zur Behandlung eines Substrates und ein Halbleiterbauelement
DE10330022A1 (de) 2003-07-03 2005-01-20 Degussa Ag Verfahren zur Herstellung von Iow-k dielektrischen Filmen
DE10340609A1 (de) 2003-08-29 2005-04-07 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht
US7282735B2 (en) 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
JP2007258663A (ja) 2006-02-22 2007-10-04 Tokyo Ohka Kogyo Co Ltd 有機半導体素子の製造方法及びそれに用いる絶縁膜形成用組成物
US20080237581A1 (en) 2007-04-02 2008-10-02 Xerox Corporation Device with phase-separated dielectric structure

Also Published As

Publication number Publication date
DE102011087561A1 (de) 2012-06-06
US20140114002A1 (en) 2014-04-24
JP2012119679A (ja) 2012-06-21
JP5775426B2 (ja) 2015-09-09
US20120142515A1 (en) 2012-06-07
US8623447B2 (en) 2014-01-07
US9058981B2 (en) 2015-06-16

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