JP5775426B2 - 電子機器を製造するプロセス - Google Patents

電子機器を製造するプロセス Download PDF

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Publication number
JP5775426B2
JP5775426B2 JP2011253306A JP2011253306A JP5775426B2 JP 5775426 B2 JP5775426 B2 JP 5775426B2 JP 2011253306 A JP2011253306 A JP 2011253306A JP 2011253306 A JP2011253306 A JP 2011253306A JP 5775426 B2 JP5775426 B2 JP 5775426B2
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JP
Japan
Prior art keywords
dielectric
dielectric material
phase
low
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2011253306A
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English (en)
Japanese (ja)
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JP2012119679A (ja
JP2012119679A5 (https=
Inventor
イリアン・ウー
ピン・リウ
アンソニー・ウィグルスワース
ナン−シン・フー
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Xerox Corp
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Xerox Corp
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Publication of JP2012119679A publication Critical patent/JP2012119679A/ja
Publication of JP2012119679A5 publication Critical patent/JP2012119679A5/ja
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/306—Polyimides or polyesterimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/42—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes polyesters; polyethers; polyacetals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
    • H01B3/447—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from acrylic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electroluminescent Light Sources (AREA)
JP2011253306A 2010-12-01 2011-11-18 電子機器を製造するプロセス Expired - Fee Related JP5775426B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/957,445 US8623447B2 (en) 2010-12-01 2010-12-01 Method for coating dielectric composition for fabricating thin-film transistors
US12/957,445 2010-12-01

Publications (3)

Publication Number Publication Date
JP2012119679A JP2012119679A (ja) 2012-06-21
JP2012119679A5 JP2012119679A5 (https=) 2015-01-08
JP5775426B2 true JP5775426B2 (ja) 2015-09-09

Family

ID=46083117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011253306A Expired - Fee Related JP5775426B2 (ja) 2010-12-01 2011-11-18 電子機器を製造するプロセス

Country Status (3)

Country Link
US (2) US8623447B2 (https=)
JP (1) JP5775426B2 (https=)
DE (1) DE102011087561B4 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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CN103325943A (zh) * 2013-05-16 2013-09-25 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法
WO2015076358A1 (ja) * 2013-11-21 2015-05-28 株式会社ニコン 配線パターンの製造方法およびトランジスタの製造方法
KR101680433B1 (ko) * 2014-11-25 2016-11-29 순천대학교 산학협력단 롤대롤 그라비아 인쇄기반 박막트랜지스터 제조방법, 박막트랜지스터 백플랜 제조방법, 백플랜 압력센서 및 스마트 장판의 제조방법
US10115785B1 (en) 2017-06-01 2018-10-30 Xerox Corporation Memory cells and devices
JP6926939B2 (ja) * 2017-10-23 2021-08-25 東京エレクトロン株式会社 半導体装置の製造方法

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US6107117A (en) 1996-12-20 2000-08-22 Lucent Technologies Inc. Method of making an organic thin film transistor
US5883219A (en) 1997-05-29 1999-03-16 International Business Machines Corporation Integrated circuit device and process for its manufacture
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US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6440642B1 (en) 1999-09-15 2002-08-27 Shipley Company, L.L.C. Dielectric composition
US6949762B2 (en) 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
US6770904B2 (en) 2002-01-11 2004-08-03 Xerox Corporation Polythiophenes and electronic devices generated therefrom
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Also Published As

Publication number Publication date
DE102011087561A1 (de) 2012-06-06
US20140114002A1 (en) 2014-04-24
DE102011087561B4 (de) 2023-10-05
JP2012119679A (ja) 2012-06-21
US20120142515A1 (en) 2012-06-07
US8623447B2 (en) 2014-01-07
US9058981B2 (en) 2015-06-16

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