DE102011011911A1 - Polierzusammensetzung und diese verwendendes Polierverfahren - Google Patents

Polierzusammensetzung und diese verwendendes Polierverfahren Download PDF

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Publication number
DE102011011911A1
DE102011011911A1 DE102011011911A DE102011011911A DE102011011911A1 DE 102011011911 A1 DE102011011911 A1 DE 102011011911A1 DE 102011011911 A DE102011011911 A DE 102011011911A DE 102011011911 A DE102011011911 A DE 102011011911A DE 102011011911 A1 DE102011011911 A1 DE 102011011911A1
Authority
DE
Germany
Prior art keywords
polishing composition
less
composition according
polishing
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102011011911A
Other languages
German (de)
English (en)
Inventor
Shuhei Takahashi
Hitoshi Morinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of DE102011011911A1 publication Critical patent/DE102011011911A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/04Aqueous dispersions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102011011911A 2010-03-02 2011-02-21 Polierzusammensetzung und diese verwendendes Polierverfahren Withdrawn DE102011011911A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-045676 2010-03-02
JP2010045676A JP5492603B2 (ja) 2010-03-02 2010-03-02 研磨用組成物及びそれを用いた研磨方法

Publications (1)

Publication Number Publication Date
DE102011011911A1 true DE102011011911A1 (de) 2011-12-01

Family

ID=43859479

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011011911A Withdrawn DE102011011911A1 (de) 2010-03-02 2011-02-21 Polierzusammensetzung und diese verwendendes Polierverfahren

Country Status (8)

Country Link
US (1) US20110217845A1 (US20040106767A1-20040603-C00005.png)
JP (1) JP5492603B2 (US20040106767A1-20040603-C00005.png)
KR (1) KR20110099627A (US20040106767A1-20040603-C00005.png)
CN (1) CN102190961A (US20040106767A1-20040603-C00005.png)
DE (1) DE102011011911A1 (US20040106767A1-20040603-C00005.png)
GB (1) GB2478396A (US20040106767A1-20040603-C00005.png)
SG (1) SG173972A1 (US20040106767A1-20040603-C00005.png)
TW (1) TW201137095A (US20040106767A1-20040603-C00005.png)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY163201A (en) * 2011-01-21 2017-08-15 Cabot Microelectronics Corp Silicon polishing compositions with improved psd performance
JP6013828B2 (ja) * 2012-08-10 2016-10-25 株式会社フジミインコーポレーテッド 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法
JP2014038906A (ja) * 2012-08-13 2014-02-27 Fujimi Inc 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子(上海)有限公司 一种碱性化学机械抛光液
DE102013218880A1 (de) 2012-11-20 2014-05-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe, umfassend das gleichzeitige Polieren einer Vorderseite und einer Rückseite einer Substratscheibe
US20150376464A1 (en) * 2013-02-13 2015-12-31 Fujimi Incorporated Polishing composition, method for producing polishing composition and method for producing polished article
JP6306383B2 (ja) * 2014-03-17 2018-04-04 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
WO2017150158A1 (ja) * 2016-03-01 2017-09-08 株式会社フジミインコーポレーテッド シリコン基板の研磨方法および研磨用組成物セット
JP6891107B2 (ja) * 2017-12-27 2021-06-18 ニッタ・デュポン株式会社 研磨用組成物
JP7166819B2 (ja) 2018-07-13 2022-11-08 Cmcマテリアルズ株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
CN113122143B (zh) * 2019-12-31 2024-03-08 安集微电子(上海)有限公司 一种化学机械抛光液及其在铜抛光中的应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212861A (ja) 1990-12-06 1992-08-04 Mitsubishi Heavy Ind Ltd インキ膜厚・含水率計測装置
JPH10245545A (ja) 1997-03-05 1998-09-14 Asahi Denka Kogyo Kk シリコンウェハー用研磨助剤
JP2001110760A (ja) 1999-10-04 2001-04-20 Asahi Denka Kogyo Kk シリコンウェハー用研磨助剤
JP2005085858A (ja) 2003-09-05 2005-03-31 Fujimi Inc 研磨用組成物

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US3959165A (en) * 1972-09-15 1976-05-25 Colgate-Palmolive Company Biodegradable, non-polluting, heavy duty synthetic organic detergent composition
US4169337A (en) * 1978-03-30 1979-10-02 Nalco Chemical Company Process for polishing semi-conductor materials
US4462188A (en) * 1982-06-21 1984-07-31 Nalco Chemical Company Silica sol compositions for polishing silicon wafers
US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US6071816A (en) * 1997-08-29 2000-06-06 Motorola, Inc. Method of chemical mechanical planarization using a water rinse to prevent particle contamination
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
US6340602B1 (en) * 1999-12-10 2002-01-22 Sensys Instruments Method of measuring meso-scale structures on wafers
US6510395B2 (en) * 2000-08-11 2003-01-21 Sensys Instruments Corporation Method of detecting residue on a polished wafer
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6685757B2 (en) * 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
JP2004128069A (ja) * 2002-09-30 2004-04-22 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
JP4593064B2 (ja) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
KR20050071677A (ko) * 2002-11-08 2005-07-07 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 린싱용 조성물
US20050133376A1 (en) * 2003-12-19 2005-06-23 Opaskar Vincent C. Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom
JP2005209800A (ja) * 2004-01-21 2005-08-04 Fujitsu Ltd 半導体装置の製造方法
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
JP4012180B2 (ja) * 2004-08-06 2007-11-21 株式会社東芝 Cmp用スラリー、研磨方法、および半導体装置の製造方法
JP2007214205A (ja) * 2006-02-07 2007-08-23 Fujimi Inc 研磨用組成物
JP2008004621A (ja) * 2006-06-20 2008-01-10 Toshiba Corp Cu膜CMP用スラリー、研磨方法および半導体装置の製造方法
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US20080135520A1 (en) * 2006-12-12 2008-06-12 Tao Sun Chemical composition for chemical mechanical planarization
JP5444625B2 (ja) * 2008-03-05 2014-03-19 日立化成株式会社 Cmp研磨液、基板の研磨方法及び電子部品
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212861A (ja) 1990-12-06 1992-08-04 Mitsubishi Heavy Ind Ltd インキ膜厚・含水率計測装置
JPH10245545A (ja) 1997-03-05 1998-09-14 Asahi Denka Kogyo Kk シリコンウェハー用研磨助剤
JP2001110760A (ja) 1999-10-04 2001-04-20 Asahi Denka Kogyo Kk シリコンウェハー用研磨助剤
JP2005085858A (ja) 2003-09-05 2005-03-31 Fujimi Inc 研磨用組成物

Also Published As

Publication number Publication date
GB2478396A (en) 2011-09-07
US20110217845A1 (en) 2011-09-08
SG173972A1 (en) 2011-09-29
JP2011181765A (ja) 2011-09-15
KR20110099627A (ko) 2011-09-08
GB201102674D0 (en) 2011-03-30
CN102190961A (zh) 2011-09-21
TW201137095A (en) 2011-11-01
JP5492603B2 (ja) 2014-05-14

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Legal Events

Date Code Title Description
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130903