DE102009035429A1 - Leuchtdiodenchip - Google Patents

Leuchtdiodenchip Download PDF

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Publication number
DE102009035429A1
DE102009035429A1 DE102009035429A DE102009035429A DE102009035429A1 DE 102009035429 A1 DE102009035429 A1 DE 102009035429A1 DE 102009035429 A DE102009035429 A DE 102009035429A DE 102009035429 A DE102009035429 A DE 102009035429A DE 102009035429 A1 DE102009035429 A1 DE 102009035429A1
Authority
DE
Germany
Prior art keywords
semiconductor body
trench
area
led chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009035429A
Other languages
German (de)
English (en)
Inventor
Markus Dr. Maute
Tony Dr. Albrecht
Anna Kasprzak-Zablocka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102009035429A priority Critical patent/DE102009035429A1/de
Priority to US13/388,265 priority patent/US20120267662A1/en
Priority to PCT/EP2010/060077 priority patent/WO2011012446A1/de
Priority to CN2010800340821A priority patent/CN102473797A/zh
Priority to EP10732957.5A priority patent/EP2460190B1/de
Priority to JP2012522085A priority patent/JP2013501350A/ja
Priority to KR1020127005143A priority patent/KR101754435B1/ko
Priority to TW099123071A priority patent/TWI446581B/zh
Publication of DE102009035429A1 publication Critical patent/DE102009035429A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE102009035429A 2009-07-31 2009-07-31 Leuchtdiodenchip Withdrawn DE102009035429A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102009035429A DE102009035429A1 (de) 2009-07-31 2009-07-31 Leuchtdiodenchip
US13/388,265 US20120267662A1 (en) 2009-07-31 2010-07-13 Light-emitting diode chip
PCT/EP2010/060077 WO2011012446A1 (de) 2009-07-31 2010-07-13 Leuchtdiodenchip
CN2010800340821A CN102473797A (zh) 2009-07-31 2010-07-13 发光二极管芯片
EP10732957.5A EP2460190B1 (de) 2009-07-31 2010-07-13 Leuchtdiodenchip
JP2012522085A JP2013501350A (ja) 2009-07-31 2010-07-13 発光ダイオードチップ
KR1020127005143A KR101754435B1 (ko) 2009-07-31 2010-07-13 발광다이오드칩
TW099123071A TWI446581B (zh) 2009-07-31 2010-07-14 發光二極體晶片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009035429A DE102009035429A1 (de) 2009-07-31 2009-07-31 Leuchtdiodenchip

Publications (1)

Publication Number Publication Date
DE102009035429A1 true DE102009035429A1 (de) 2011-02-03

Family

ID=42983717

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009035429A Withdrawn DE102009035429A1 (de) 2009-07-31 2009-07-31 Leuchtdiodenchip

Country Status (8)

Country Link
US (1) US20120267662A1 (https=)
EP (1) EP2460190B1 (https=)
JP (1) JP2013501350A (https=)
KR (1) KR101754435B1 (https=)
CN (1) CN102473797A (https=)
DE (1) DE102009035429A1 (https=)
TW (1) TWI446581B (https=)
WO (1) WO2011012446A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017085200A1 (de) * 2015-11-19 2017-05-26 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872830A (zh) * 2010-06-10 2010-10-27 厦门市三安光电科技有限公司 自带短路保护功能的垂直发光二极管
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
TWI723886B (zh) * 2013-03-18 2021-04-01 晶元光電股份有限公司 發光元件
CN103996773B (zh) * 2014-06-06 2016-09-28 厦门市三安光电科技有限公司 一种倒装发光二极管结构及其制作方法
JP6537883B2 (ja) 2015-05-14 2019-07-03 スタンレー電気株式会社 半導体発光素子および半導体発光素子アレイ
WO2017217308A1 (ja) 2016-06-17 2017-12-21 株式会社村田製作所 電子部品、振動板、電子機器および電子部品の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070221613A1 (en) * 2006-03-23 2007-09-27 Gutsche Martin U Structure for stopping mechanical cracks in a substrate wafer, use of the structure and a method for producing the structure
US20070228393A1 (en) * 2006-03-31 2007-10-04 Nichia Corporation Light emitting device and fabrication method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07131070A (ja) * 1993-10-28 1995-05-19 Victor Co Of Japan Ltd 半導体発光素子及び半導体発光素子アレイ
DE4427840A1 (de) * 1994-07-28 1996-02-01 Osa Elektronik Gmbh Verfahren zur Effizienzerhöhung von A¶I¶¶I¶¶I¶B¶V¶ - Halbleiter-Chips
JP3241976B2 (ja) * 1995-10-16 2001-12-25 株式会社東芝 半導体発光素子
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
JP4050444B2 (ja) * 2000-05-30 2008-02-20 信越半導体株式会社 発光素子及びその製造方法
JP2002280602A (ja) * 2001-03-21 2002-09-27 Toshiba Corp 垂直共振器型発光ダイオード及びその発光ダイオードを用いた光送信モジュール
JP4116387B2 (ja) * 2002-09-30 2008-07-09 株式会社東芝 半導体発光素子
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
JP2007081010A (ja) * 2005-09-13 2007-03-29 Matsushita Electric Ind Co Ltd 発光素子
JP2007123436A (ja) * 2005-10-26 2007-05-17 Toshiba Corp 半導体発光素子およびその製造方法
JP5250999B2 (ja) * 2006-06-08 2013-07-31 ソニー株式会社 面発光型半導体レーザ
JP2008004587A (ja) * 2006-06-20 2008-01-10 Sharp Corp 半導体発光素子及びその製造方法並びに化合物半導体発光ダイオード
CN101244533B (zh) * 2007-02-16 2010-09-15 香港应用科技研究院有限公司 超平坦化学机械抛光技术之方法及使用该方法制造的半导体组件
JP2009105123A (ja) * 2007-10-22 2009-05-14 Showa Denko Kk 発光ダイオードおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070221613A1 (en) * 2006-03-23 2007-09-27 Gutsche Martin U Structure for stopping mechanical cracks in a substrate wafer, use of the structure and a method for producing the structure
US20070228393A1 (en) * 2006-03-31 2007-10-04 Nichia Corporation Light emitting device and fabrication method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017085200A1 (de) * 2015-11-19 2017-05-26 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips
US10580938B2 (en) 2015-11-19 2020-03-03 Osram Oled Gmbh Light-emitting diode chip, and method for manufacturing a light-emitting diode chip

Also Published As

Publication number Publication date
KR20120043030A (ko) 2012-05-03
EP2460190A1 (de) 2012-06-06
TWI446581B (zh) 2014-07-21
TW201115786A (en) 2011-05-01
KR101754435B1 (ko) 2017-07-05
US20120267662A1 (en) 2012-10-25
WO2011012446A1 (de) 2011-02-03
JP2013501350A (ja) 2013-01-10
CN102473797A (zh) 2012-05-23
EP2460190B1 (de) 2017-03-15

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OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
R012 Request for examination validly filed
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee