CN101872830A - 自带短路保护功能的垂直发光二极管 - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 238000002955 isolation Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 abstract description 4
- 230000004888 barrier function Effects 0.000 abstract 3
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000012858 packaging process Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
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Abstract
自带短路保护功能的垂直发光二极管，在第一电极上依次叠层有散热基板、第二电极、焊接金属和第三电极，在第三电极上形成半导体发光叠层，在半导体发光叠层上蚀刻一隔离槽至第三电极，则在半导体发光叠层位于第三电极中央区域，形成一环绕半导体发光叠层四周并以隔离槽间隔开的半导体发光叠层护栏，该半导体发光叠层护栏具有与半导体发光叠层完全相同的结构，隔离槽底部为第三电极；一第四电极形成于半导体发光叠层上；通过半导体发光叠层护栏间隔环绕于半导体发光叠层周围，能够有效阻隔芯片切割的金属粉末或封装过程的导电胶到达半导体发光叠层，对半导体发光叠层起到短路保护的功能，以使本发明的垂直发光二极管具有较好的可靠性。
Description
技术领域
本发明涉及一种垂直发光二极管，特别是一种自带短路保护功能的垂直发光二极管。
背景技术
目前大多数的发光二极管的GaN基外延主要是生长在蓝宝石衬底上，由于蓝宝石导电性能差，普通的GaN基发光器件采用横向结构，即两个电极在器件的同一侧，由于电流在n-GaN层中横向流动距离不等，导致电流堵塞，影响发光器件可靠性；另外，蓝宝石衬底的导热性能低，因此限制了GaN基器件的发光功率及效率，因此将蓝宝石衬底去除将发光器件做成垂直结构可以有效解决散热、出光以及抗静电等问题。
对于垂直发光二极管，n型半导体导电层成为上发光面，p型半导体层成为下发光面，并通过导电金属焊接在散热基板上，p型半导体导电层的厚度通常很薄，约200-800nm，因此形成于p型半导体导电层上的活性层与散热基板上的导电金属的间距很小，甚至有些是采用金属衬底如Mo、Cu、WCu等作为散热基板，因此在芯片切割过程产生的金属粉末容易喷溅至量子阱半导体发光层侧壁导致发光二极管产生漏电而失效，封装过程导电胶容易延伸至半导体发光层导致发光二极管产生漏电而失效，芯粒的夹取过程也很容易因伤及半导体发光叠层而导致漏电，等等。为了避免垂直发光二极管受以上因素影响发生短路，现有的技术是在半导体发光叠层侧壁引入SiO2等绝缘材料保护。
如图1a、图1b所示现有的一种垂直发光二极管结构，其中散热基板10形成于底部第一电极11上，散热基板10可以是GaAs、Ge、Si、Mo、Cu、WCu其中任一种材料，第二电极12形成于散热基板10上，焊接金属13形成于第二电极12上，第三电极14形成于焊接金属13上中央区域，半导体发光叠层20形成于第三电极14上，此半导体发光叠层包括由GaN构成的n型导电层、InGaN构成的活性层、InGaN或AlGaN构成的p型限制层及由GaN构成的p型导电层，第四电极15形成于半导体发光叠层20上，电绝缘层16形成于半导体发光叠层20上表面边缘并延伸至其侧壁，此电绝缘层包括SiO2、SiN或Al2O3构成的材料群组中的任一材料。此现有技术的垂直发光二极管的特征在于采用SiO2、SiN或Al2O3电绝缘材料起短路保护作用，此技术的缺点是：SiO2等绝缘薄膜通常是在一定温度下通过有机气相化学沉积方式(PECVD)形成于半导体发光叠层表面及侧壁，沉积的SiO2薄膜本身具有比较大的应力，且与半导体发光叠层的黏附性不佳，因此SiO2薄膜容易裂开或崩落导致其失去短路保护功能。
发明内容
为解决上述现有技术中因SiO2绝缘薄膜容易裂开或崩落导致垂直发光二极管失去短路保护而影响其可靠性，本发明创新地提出一种自带短路保护功能的垂直发光二极管。
本发明是这样子实现的，自带短路保护功能的垂直发光二极管，
一第一电极；
一散热基板，形成于第一电极上；
一第二电极，形成于散热基板上；
一焊接金属，形成于第二电极上；
一第三电极，形成于焊接金属上；
一半导体发光叠层形成于第三电极上的中央区域，此半导体发光叠层提供发光作用；
一半导体发光叠层护栏形成于第三电极上并位于第三电极外围区域，半导体发光叠层护栏间隔环绕于半导体发光叠层的四周；此半导体发光叠层护栏具有与半导体发光叠层完全相同的结构，间隔的半导体发光叠层护栏与半导体发光叠层之间的为一隔离槽；隔离槽底部为第三电极，半导体发光叠层护栏对半导体发光叠层起短路保护作用；
一第四电极，形成于半导体发光叠层上
半导体发光叠层护栏是本发明的创新设计，通过蚀刻隔离槽方式去除部分的半导体发光叠层形成半导体发光叠层护栏，此半导体发光叠层护栏环绕在半导体发光叠层周围，能够有效阻隔芯片切割的金属粉末或封装过程的导电胶到达半导体发光叠层，对半导体发光叠层起到短路保护的作用，以使本发明的垂直发光二极管具有较好的可靠性。
本发明其中，散热基板的制备材料选自GaAs、Ge、Si、Mo、Cu或WCu；半导体发光叠层包括由GaN构成的第一导电性半导体层、InGaN构成的活性层、InGaN或AlGaN构成的第二导电性限制层以及由GaN构成的第二导电性半导体层；半导体发光叠层护栏与半导体发光叠层之间的隔离槽通过蚀刻方式形成，即通过在半导体发光叠层上四周蚀刻隔离槽至与其底部连接的第三电极，使得半导体发光叠层外侧间隔环绕有与其相同叠层的结构半导体发光叠层护栏。
本发明的有益效果是：半导体发光叠层护栏间隔环绕在半导体发光叠层周围，能够有效阻隔芯片切割的金属粉末或封装过程的导电胶到达半导体发光叠层，对半导体发光叠层起到短路保护的功能，以使本发明的垂直发光二极管具有较好的可靠性。
附图说明
图1a：现有技术的垂直发光二极管的俯视图；
图1b：沿图1a中A-A剖面线的剖面示意图；
图2a：本发明自带短路保护功能的垂直发光二极管的俯视图；
图2b：沿图2a中B-B剖面线的剖面示意图；
附图中：
10：散热基板； 11：第一电极；
12：第二电极； 13：焊接金属
14：第三电极； 15：第四电极；
16：电绝缘层； 20：半导体发光叠层；
30：半导体发光叠层护栏； 31：隔离槽。
具体实施方式
下面结合附图和实施例对本发明进一步说明。
如图2a、图2b所示的自带短路保护功能的垂直发光二极管，在GaAs材料制得的散热基板10底面形成第一电极11，第二电极12形成于散热基板10上，第三电极14形成于焊接金属13上，半导体发光叠层20形成于第三电极14上，焊接金属13形成于第二电极12上，半导体发光叠层20形成于第三电极14上的中央区域.，此半导体发光叠层20包括由GaN构成的n型导电层、InGaN构成的活性层、AlGaN构成的p型限制层及由GaN构成的p型导电层，半导体发光叠层20提供发光作用；第四电极15形成于半导体发光叠层20上；一半导体发光叠层护栏30形成于第三电极14上并位于第三电极14的外围区域，半导体发光叠层护栏30间隔环绕于半导体发光叠层20的四周；此半导体发光叠层护栏30具有与半导体发光叠层20完全相同的结构，间隔的半导体发光叠层护栏与半导体发光叠层之间的为一隔离槽31；隔离槽31底部为第三电极14，即半导体发光叠层护栏30与半导体发光叠层20之间裸露出第三电极14。工艺上，本发明半导体发光叠层护栏30只需将裸露的第三电极14区域的半导体发光叠层20蚀刻出隔离槽31去除即可形成，半导体发光叠层护栏30对半导体发光叠层20起短路保护作用；因此，本发明设计的垂直发光二极管有自带短路保护功能，具有较好的可靠性。
Claims (5)
1.自带短路保护功能的垂直发光二极管，
一第一电极；
一散热基板，形成于第一电极上；
一第二电极，形成于散热基板上；
一焊接金属，形成于第二电极上；
一第三电极，形成于焊接金属上；
一半导体发光叠层形成于第三电极上的中央区域，此半导体发光叠层提供发光作用；
一半导体发光叠层护栏形成于第三电极上并位于第三电极外围区域，半导体发光叠层护栏间隔环绕于半导体发光叠层的四周；此半导体发光叠层护栏具有与半导体发光叠层完全相同的结构，间隔的半导体发光叠层护栏与半导体发光叠层之间的为一隔离槽；隔离槽底部为第三电极，半导体发光叠层护栏对半导体发光叠层起短路保护作用；
一第四电极，形成于半导体发光叠层上。
2.如权利要求1所述的自带短路保护功能的垂直发光二极管，其特征在于：散热基板的制备材料选自GaAs、Ge、Si、Mo、Cu或WCu。
3.如权利要求1所述的自带短路保护功能的垂直发光二极管，其特征在于：所述的半导体发光叠层护栏与半导体发光叠层之间的隔离槽通过蚀刻方式形成。
4.如权利要求1所述的自带短路保护功能的垂直发光二极管，其特征在于：半导体发光叠层依次由第一导电性的半导体层、活性层、第二导电性的半导体层叠层连接构成。
5.如权利要求1、3或4所述的自带短路保护功能的垂直发光二极管，其特征在于：半导体发光叠层护栏中，第一导电性半导体层材料包括GaN，活性层材料包括InGaN，第二导电性半导体层材料包括GaN；在活性层与第二导电性半导体层之间还形成一第二导电性限制层，第二导电性限制层材料包括InGaN或AlGaN。
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| WO2015196340A1 (zh) * | 2014-06-23 | 2015-12-30 | 华为技术有限公司 | 一种芯片散热结构和终端设备 |
| WO2020019326A1 (zh) * | 2018-07-27 | 2020-01-30 | 天津三安光电有限公司 | 一种半导体发光元件 |
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| JP5792694B2 (ja) * | 2012-08-14 | 2015-10-14 | 株式会社東芝 | 半導体発光素子 |
| US10804360B2 (en) * | 2017-04-14 | 2020-10-13 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device, electric power conversion device, method for producing silicon carbide semiconductor device, and method for producing electric power conversion device |
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| KR100721150B1 (ko) * | 2005-11-24 | 2007-05-22 | 삼성전기주식회사 | 수직 구조 질화갈륨계 발광다이오드 소자 |
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2010
- 2010-06-10 CN CN201010205490A patent/CN101872830A/zh active Pending
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- 2011-06-09 US US13/157,000 patent/US8653555B2/en active Active - Reinstated
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| US6255129B1 (en) * | 2000-09-07 | 2001-07-03 | Highlink Technology Corporation | Light-emitting diode device and method of manufacturing the same |
| US20030143772A1 (en) * | 2002-01-30 | 2003-07-31 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
| WO2009117848A1 (en) * | 2008-03-26 | 2009-10-01 | Lattice Power (Jiangxi) Corporation | Method for fabricating robust light-emitting diodes |
| WO2011012446A1 (de) * | 2009-07-31 | 2011-02-03 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015196340A1 (zh) * | 2014-06-23 | 2015-12-30 | 华为技术有限公司 | 一种芯片散热结构和终端设备 |
| WO2020019326A1 (zh) * | 2018-07-27 | 2020-01-30 | 天津三安光电有限公司 | 一种半导体发光元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8653555B2 (en) | 2014-02-18 |
| US20110303895A1 (en) | 2011-12-15 |
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