DE102009015589A1 - Phasenverschiebungsmaskenrohling und Verfahren zum Herstellen einer Phasenverschiebungsmaske - Google Patents

Phasenverschiebungsmaskenrohling und Verfahren zum Herstellen einer Phasenverschiebungsmaske Download PDF

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Publication number
DE102009015589A1
DE102009015589A1 DE102009015589A DE102009015589A DE102009015589A1 DE 102009015589 A1 DE102009015589 A1 DE 102009015589A1 DE 102009015589 A DE102009015589 A DE 102009015589A DE 102009015589 A DE102009015589 A DE 102009015589A DE 102009015589 A1 DE102009015589 A1 DE 102009015589A1
Authority
DE
Germany
Prior art keywords
layer
mask
phase shift
etching
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102009015589A
Other languages
German (de)
English (en)
Inventor
Atsushi Kominato
Toshiyuki Suzuki
Yasushi Okubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE102009015589A1 publication Critical patent/DE102009015589A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
DE102009015589A 2008-04-02 2009-03-30 Phasenverschiebungsmaskenrohling und Verfahren zum Herstellen einer Phasenverschiebungsmaske Withdrawn DE102009015589A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008-095924 2008-04-02
JP2008095924 2008-04-02
JP2009-034480 2009-02-17
JP2009034480A JP5323526B2 (ja) 2008-04-02 2009-02-17 位相シフトマスクブランク及び位相シフトマスクの製造方法

Publications (1)

Publication Number Publication Date
DE102009015589A1 true DE102009015589A1 (de) 2009-10-22

Family

ID=41078854

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009015589A Withdrawn DE102009015589A1 (de) 2008-04-02 2009-03-30 Phasenverschiebungsmaskenrohling und Verfahren zum Herstellen einer Phasenverschiebungsmaske

Country Status (5)

Country Link
US (1) US8043771B2 (https=)
JP (1) JP5323526B2 (https=)
KR (1) KR101575697B1 (https=)
DE (1) DE102009015589A1 (https=)
TW (1) TWI453529B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220075258A1 (en) * 2018-12-26 2022-03-10 S&S Tech Co., Ltd. Blankmask and photomask

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2209048B1 (en) * 2009-01-15 2013-09-04 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a photomask, and dry etching method
KR101663173B1 (ko) * 2009-10-09 2016-10-07 삼성전자주식회사 알카리 세정에 내성을 갖는 위상 반전 마스크 및 위상 반전 마스크의 제조 방법
JP2011123426A (ja) * 2009-12-14 2011-06-23 Toppan Printing Co Ltd フォトマスクブランク及びフォトマスクの製造方法
JP5704754B2 (ja) 2010-01-16 2015-04-22 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法
KR101151685B1 (ko) * 2011-04-22 2012-07-20 주식회사 에스앤에스텍 블랭크 마스크 및 포토마스크
SG185228A1 (en) * 2011-04-25 2012-11-29 Ultratech Inc Phase-shift mask with assist phase regions
JP5541266B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 パターン形成膜のエッチング条件の評価方法
JP5541265B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 エッチングマスク膜の評価方法
US8715890B2 (en) 2012-01-31 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor mask blanks with a compatible stop layer
KR102046729B1 (ko) * 2013-09-24 2019-11-19 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법
JP6364813B2 (ja) * 2014-02-27 2018-08-01 大日本印刷株式会社 フォトマスクの製造方法
JP6612326B2 (ja) * 2015-03-19 2019-11-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6780550B2 (ja) * 2017-03-10 2020-11-04 信越化学工業株式会社 フォトマスクブランク
JP6753375B2 (ja) * 2017-07-28 2020-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法
US10739671B2 (en) 2017-11-10 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing phase shift photo masks

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1069055A (ja) 1996-08-28 1998-03-10 Sharp Corp フォトマスクの製造方法
JP2003322947A (ja) 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
WO2004090635A1 (ja) 2003-04-09 2004-10-21 Hoya Corporation フォトマスクの製造方法及びフォトマスクブランク
US7011910B2 (en) 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
JP2008095924A (ja) 2006-10-16 2008-04-24 Denso Corp シール装置
JP2009034480A (ja) 2007-07-31 2009-02-19 Topcon Corp 眼科情報処理装置及び眼科検査装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749558A (ja) * 1993-08-05 1995-02-21 Sony Corp 位相シフトマスクの作製方法
JP2002251000A (ja) 2001-02-26 2002-09-06 Semiconductor Leading Edge Technologies Inc 位相シフトマスクの製造方法、位相シフトマスク、位相シフトマスクブランクス及び半導体装置の製造方法
US6924070B2 (en) * 2003-03-19 2005-08-02 Intel Corporation Composite patterning integration
JP4413828B2 (ja) * 2004-10-22 2010-02-10 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
US8293430B2 (en) * 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP2009063638A (ja) * 2007-09-04 2009-03-26 Fujitsu Microelectronics Ltd フォトマスクの製造方法及び半導体装置の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1069055A (ja) 1996-08-28 1998-03-10 Sharp Corp フォトマスクの製造方法
US5851702A (en) 1996-08-28 1998-12-22 Sharp Kabushiki Kaisha Method for producing a photomask
JP2003322947A (ja) 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US7011910B2 (en) 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
WO2004090635A1 (ja) 2003-04-09 2004-10-21 Hoya Corporation フォトマスクの製造方法及びフォトマスクブランク
US7314690B2 (en) 2003-04-09 2008-01-01 Hoya Corporation Photomask producing method and photomask blank
JP2008095924A (ja) 2006-10-16 2008-04-24 Denso Corp シール装置
JP2009034480A (ja) 2007-07-31 2009-02-19 Topcon Corp 眼科情報処理装置及び眼科検査装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220075258A1 (en) * 2018-12-26 2022-03-10 S&S Tech Co., Ltd. Blankmask and photomask

Also Published As

Publication number Publication date
KR20090105850A (ko) 2009-10-07
TWI453529B (zh) 2014-09-21
US20090253054A1 (en) 2009-10-08
KR101575697B1 (ko) 2015-12-08
TW201003296A (en) 2010-01-16
JP5323526B2 (ja) 2013-10-23
US8043771B2 (en) 2011-10-25
JP2009265620A (ja) 2009-11-12

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Legal Events

Date Code Title Description
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: G03F0001080000

Ipc: G03F0001300000

Effective date: 20120112

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20131001