TWI453529B - 相偏移光罩基底及相偏移光罩之製造方法 - Google Patents

相偏移光罩基底及相偏移光罩之製造方法 Download PDF

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Publication number
TWI453529B
TWI453529B TW098110215A TW98110215A TWI453529B TW I453529 B TWI453529 B TW I453529B TW 098110215 A TW098110215 A TW 098110215A TW 98110215 A TW98110215 A TW 98110215A TW I453529 B TWI453529 B TW I453529B
Authority
TW
Taiwan
Prior art keywords
film
mask
etching
phase shift
pattern
Prior art date
Application number
TW098110215A
Other languages
English (en)
Chinese (zh)
Other versions
TW201003296A (en
Inventor
小湊淳志
鈴木壽幸
大久保靖
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201003296A publication Critical patent/TW201003296A/zh
Application granted granted Critical
Publication of TWI453529B publication Critical patent/TWI453529B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
TW098110215A 2008-04-02 2009-03-27 相偏移光罩基底及相偏移光罩之製造方法 TWI453529B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008095924 2008-04-02
JP2009034480A JP5323526B2 (ja) 2008-04-02 2009-02-17 位相シフトマスクブランク及び位相シフトマスクの製造方法

Publications (2)

Publication Number Publication Date
TW201003296A TW201003296A (en) 2010-01-16
TWI453529B true TWI453529B (zh) 2014-09-21

Family

ID=41078854

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098110215A TWI453529B (zh) 2008-04-02 2009-03-27 相偏移光罩基底及相偏移光罩之製造方法

Country Status (5)

Country Link
US (1) US8043771B2 (https=)
JP (1) JP5323526B2 (https=)
KR (1) KR101575697B1 (https=)
DE (1) DE102009015589A1 (https=)
TW (1) TWI453529B (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2209048B1 (en) * 2009-01-15 2013-09-04 Shin-Etsu Chemical Co., Ltd. Method for manufacturing a photomask, and dry etching method
KR101663173B1 (ko) * 2009-10-09 2016-10-07 삼성전자주식회사 알카리 세정에 내성을 갖는 위상 반전 마스크 및 위상 반전 마스크의 제조 방법
JP2011123426A (ja) * 2009-12-14 2011-06-23 Toppan Printing Co Ltd フォトマスクブランク及びフォトマスクの製造方法
JP5704754B2 (ja) 2010-01-16 2015-04-22 Hoya株式会社 マスクブランク及び転写用マスクの製造方法
JP2011215197A (ja) * 2010-03-31 2011-10-27 Hoya Corp フォトマスク及びその製造方法
KR101151685B1 (ko) * 2011-04-22 2012-07-20 주식회사 에스앤에스텍 블랭크 마스크 및 포토마스크
SG185228A1 (en) * 2011-04-25 2012-11-29 Ultratech Inc Phase-shift mask with assist phase regions
JP5541266B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 パターン形成膜のエッチング条件の評価方法
JP5541265B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 エッチングマスク膜の評価方法
US8715890B2 (en) 2012-01-31 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor mask blanks with a compatible stop layer
KR102046729B1 (ko) * 2013-09-24 2019-11-19 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법
JP6364813B2 (ja) * 2014-02-27 2018-08-01 大日本印刷株式会社 フォトマスクの製造方法
JP6612326B2 (ja) * 2015-03-19 2019-11-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6780550B2 (ja) * 2017-03-10 2020-11-04 信越化学工業株式会社 フォトマスクブランク
JP6753375B2 (ja) * 2017-07-28 2020-09-09 信越化学工業株式会社 フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法
US10739671B2 (en) 2017-11-10 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing phase shift photo masks
US20220075258A1 (en) * 2018-12-26 2022-03-10 S&S Tech Co., Ltd. Blankmask and photomask

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI259329B (en) * 2003-04-09 2006-08-01 Hoya Corp Method of manufacturing a photomask, and photomask blank
JP2006209126A (ja) * 2005-01-27 2006-08-10 Applied Materials Inc フォトマスク製作に適したモリブデン層をエッチングするための方法
US20070212618A1 (en) * 2006-03-10 2007-09-13 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749558A (ja) * 1993-08-05 1995-02-21 Sony Corp 位相シフトマスクの作製方法
JP3539652B2 (ja) * 1996-08-28 2004-07-07 シャープ株式会社 フォトマスクの製造方法
JP2002251000A (ja) 2001-02-26 2002-09-06 Semiconductor Leading Edge Technologies Inc 位相シフトマスクの製造方法、位相シフトマスク、位相シフトマスクブランクス及び半導体装置の製造方法
JP2003322947A (ja) * 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US7011910B2 (en) 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
US6924070B2 (en) * 2003-03-19 2005-08-02 Intel Corporation Composite patterning integration
JP4413828B2 (ja) * 2004-10-22 2010-02-10 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP2008095924A (ja) 2006-10-16 2008-04-24 Denso Corp シール装置
US7641339B2 (en) 2007-07-31 2010-01-05 Kabushiki Kaisha Topcon Ophthalmologic information processing apparatus and ophthalmologic examination apparatus
JP2009063638A (ja) * 2007-09-04 2009-03-26 Fujitsu Microelectronics Ltd フォトマスクの製造方法及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI259329B (en) * 2003-04-09 2006-08-01 Hoya Corp Method of manufacturing a photomask, and photomask blank
JP2006209126A (ja) * 2005-01-27 2006-08-10 Applied Materials Inc フォトマスク製作に適したモリブデン層をエッチングするための方法
US20070212618A1 (en) * 2006-03-10 2007-09-13 Shin-Etsu Chemical Co., Ltd. Photomask blank and photomask

Also Published As

Publication number Publication date
KR20090105850A (ko) 2009-10-07
US20090253054A1 (en) 2009-10-08
KR101575697B1 (ko) 2015-12-08
DE102009015589A1 (de) 2009-10-22
TW201003296A (en) 2010-01-16
JP5323526B2 (ja) 2013-10-23
US8043771B2 (en) 2011-10-25
JP2009265620A (ja) 2009-11-12

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