DE102007024142A1 - Zusammensetzung zum chemisch-mechanischen Polieren von Siliziumoxid und Siliziumnitrid mit verbesserter Endpunkt-Detektion - Google Patents

Zusammensetzung zum chemisch-mechanischen Polieren von Siliziumoxid und Siliziumnitrid mit verbesserter Endpunkt-Detektion Download PDF

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Publication number
DE102007024142A1
DE102007024142A1 DE102007024142A DE102007024142A DE102007024142A1 DE 102007024142 A1 DE102007024142 A1 DE 102007024142A1 DE 102007024142 A DE102007024142 A DE 102007024142A DE 102007024142 A DE102007024142 A DE 102007024142A DE 102007024142 A1 DE102007024142 A1 DE 102007024142A1
Authority
DE
Germany
Prior art keywords
hydroxide
composition
polishing
carboxylic acid
ammonia
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102007024142A
Other languages
German (de)
English (en)
Inventor
Brian L. Middletown Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102007024142A1 publication Critical patent/DE102007024142A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102007024142A 2006-06-05 2007-05-24 Zusammensetzung zum chemisch-mechanischen Polieren von Siliziumoxid und Siliziumnitrid mit verbesserter Endpunkt-Detektion Withdrawn DE102007024142A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/446,936 US7297633B1 (en) 2006-06-05 2006-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
US11/446,936 2006-06-05

Publications (1)

Publication Number Publication Date
DE102007024142A1 true DE102007024142A1 (de) 2007-12-06

Family

ID=38650726

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007024142A Withdrawn DE102007024142A1 (de) 2006-06-05 2007-05-24 Zusammensetzung zum chemisch-mechanischen Polieren von Siliziumoxid und Siliziumnitrid mit verbesserter Endpunkt-Detektion

Country Status (8)

Country Link
US (1) US7297633B1 (https=)
JP (1) JP2007324606A (https=)
KR (1) KR20070116543A (https=)
CN (1) CN101085902B (https=)
DE (1) DE102007024142A1 (https=)
FR (1) FR2901802B1 (https=)
SG (1) SG137837A1 (https=)
TW (1) TW200804577A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011072706A1 (de) 2009-12-18 2011-06-23 Rena Gmbh Verfahren zum abtragen von substratschichten

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2090400A4 (en) * 2006-09-15 2010-11-03 Hitachi Chemical Co Ltd MEANS FOR CHEMICAL-MECHANICAL POLISHING (CMP), ADDITIVE SOLUTION FOR THE CMP POLISHERS AND METHOD FOR POLISHING A SUBSTRATE THROUGH THE USE OF THE POLISHING AGENT AND THE ADDITIVE SOLUTION
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US8671685B2 (en) * 2010-03-08 2014-03-18 Tma Power, Llc Microturbine Sun Tracker
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
JP2012146974A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
WO2023145572A1 (ja) * 2022-01-28 2023-08-03 Ａｇｃ株式会社 研磨剤、研磨剤用添加液および研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
JP3449600B2 (ja) * 1998-05-06 2003-09-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 化学反応による終点の検出
US6126848A (en) * 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6228280B1 (en) * 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
EP0957086A3 (en) * 1998-05-14 2003-02-12 Haldor Topsoe A/S Process for the removal of metal compounds from an aqueous acid solution
US6021679A (en) * 1998-08-04 2000-02-08 International Business Machines Corporation Probe for slurry gas sampling
US6899784B1 (en) * 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011072706A1 (de) 2009-12-18 2011-06-23 Rena Gmbh Verfahren zum abtragen von substratschichten

Also Published As

Publication number Publication date
FR2901802A1 (fr) 2007-12-07
KR20070116543A (ko) 2007-12-10
CN101085902A (zh) 2007-12-12
SG137837A1 (en) 2007-12-28
CN101085902B (zh) 2010-09-08
FR2901802B1 (fr) 2012-11-30
JP2007324606A (ja) 2007-12-13
US20070281483A1 (en) 2007-12-06
US7297633B1 (en) 2007-11-20
TW200804577A (en) 2008-01-16

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20131203