SG137837A1 - Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection - Google Patents

Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

Info

Publication number
SG137837A1
SG137837A1 SG200704055-3A SG2007040553A SG137837A1 SG 137837 A1 SG137837 A1 SG 137837A1 SG 2007040553 A SG2007040553 A SG 2007040553A SG 137837 A1 SG137837 A1 SG 137837A1
Authority
SG
Singapore
Prior art keywords
silicon nitride
compositions
mechanical polishing
chemical mechanical
endpoint detection
Prior art date
Application number
SG200704055-3A
Other languages
English (en)
Inventor
Brian L Mueller
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of SG137837A1 publication Critical patent/SG137837A1/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200704055-3A 2006-06-05 2007-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection SG137837A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/446,936 US7297633B1 (en) 2006-06-05 2006-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

Publications (1)

Publication Number Publication Date
SG137837A1 true SG137837A1 (en) 2007-12-28

Family

ID=38650726

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200704055-3A SG137837A1 (en) 2006-06-05 2007-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

Country Status (8)

Country Link
US (1) US7297633B1 (https=)
JP (1) JP2007324606A (https=)
KR (1) KR20070116543A (https=)
CN (1) CN101085902B (https=)
DE (1) DE102007024142A1 (https=)
FR (1) FR2901802B1 (https=)
SG (1) SG137837A1 (https=)
TW (1) TW200804577A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2090400A4 (en) * 2006-09-15 2010-11-03 Hitachi Chemical Co Ltd MEANS FOR CHEMICAL-MECHANICAL POLISHING (CMP), ADDITIVE SOLUTION FOR THE CMP POLISHERS AND METHOD FOR POLISHING A SUBSTRATE THROUGH THE USE OF THE POLISHING AGENT AND THE ADDITIVE SOLUTION
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
EP2460176A1 (de) 2009-12-18 2012-06-06 RENA GmbH Verfahren zum abtragen von substratschichten
US8671685B2 (en) * 2010-03-08 2014-03-18 Tma Power, Llc Microturbine Sun Tracker
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子(上海)有限公司 一种化学机械抛光液及其应用
JP2012146974A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
WO2023145572A1 (ja) * 2022-01-28 2023-08-03 Agc株式会社 研磨剤、研磨剤用添加液および研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
JP3449600B2 (ja) * 1998-05-06 2003-09-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 化学反応による終点の検出
US6126848A (en) * 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6228280B1 (en) * 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
EP0957086A3 (en) * 1998-05-14 2003-02-12 Haldor Topsoe A/S Process for the removal of metal compounds from an aqueous acid solution
US6021679A (en) * 1998-08-04 2000-02-08 International Business Machines Corporation Probe for slurry gas sampling
US6899784B1 (en) * 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride

Also Published As

Publication number Publication date
FR2901802A1 (fr) 2007-12-07
KR20070116543A (ko) 2007-12-10
CN101085902A (zh) 2007-12-12
CN101085902B (zh) 2010-09-08
FR2901802B1 (fr) 2012-11-30
JP2007324606A (ja) 2007-12-13
US20070281483A1 (en) 2007-12-06
DE102007024142A1 (de) 2007-12-06
US7297633B1 (en) 2007-11-20
TW200804577A (en) 2008-01-16

Similar Documents

Publication Publication Date Title
SG137837A1 (en) Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
TW200736375A (en) Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
WO2009142692A3 (en) Stable, high rate silicon slurry
TW200730615A (en) Compositions and methods for chemical mechanical polishing interlevel dielectric layers
TW200611966A (en) Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
TW200633041A (en) Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride
TW200718763A (en) Polymeric barrier removal polishing slurry
JP6530401B2 (ja) 窒化ケイ素の選択的な除去のためのcmp組成物及び方法
EP1535979A3 (en) Compositions and methods for chemical mechanical polishing silica and silicon nitride
WO2011034808A3 (en) Composition and method for polishing bulk silicon
MY150866A (en) Compositions and methods for polishing silicon nitride materials
WO2006099171A3 (en) NOVEL GeSiSn-BASED COMPOUNDS, TEMPLATES, AND SEMICONDUCTOR STRUCTURES
TW200801168A (en) Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for preparing aqueous dispersion for chemical mechanical polishing
JP2007116105A5 (https=)
TWI347969B (en) Polishing composition
JP2008283203A5 (https=)
SG157354A1 (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
SG162680A1 (en) Wet clean compositions for cowp and porous dielectrics
DE60330971D1 (de) Halbleiterschleif prozess zu seiner herstellung und polierverfahren
WO2009011100A1 (ja) Iii族窒化物半導体基板およびその洗浄方法
TWI774944B (zh) 釕材之化學機械研磨組成物
WO2008132983A1 (ja) 研磨剤組成物および半導体集積回路装置の製造方法
WO2008036823A3 (en) Uric acid additive for cleaning formulations
WO2007111813A3 (en) Iodate-containing chemical-mechanical polishing compositions and methods
JP2006191078A5 (https=)