CN101085902B - 具有改进的终点检测能力、用来对二氧化硅和氮化硅进行化学机械抛光的组合物 - Google Patents

具有改进的终点检测能力、用来对二氧化硅和氮化硅进行化学机械抛光的组合物 Download PDF

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Publication number
CN101085902B
CN101085902B CN2007101098948A CN200710109894A CN101085902B CN 101085902 B CN101085902 B CN 101085902B CN 2007101098948 A CN2007101098948 A CN 2007101098948A CN 200710109894 A CN200710109894 A CN 200710109894A CN 101085902 B CN101085902 B CN 101085902B
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China
Prior art keywords
hydroxide
weight
aqueous solution
polishing
carboxylic acid
Prior art date
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Expired - Fee Related
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CN2007101098948A
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English (en)
Chinese (zh)
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CN101085902A (zh
Inventor
B·L·穆勒
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ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN101085902A publication Critical patent/CN101085902A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2007101098948A 2006-06-05 2007-06-05 具有改进的终点检测能力、用来对二氧化硅和氮化硅进行化学机械抛光的组合物 Expired - Fee Related CN101085902B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/446,936 US7297633B1 (en) 2006-06-05 2006-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
US11/446,936 2006-06-05

Publications (2)

Publication Number Publication Date
CN101085902A CN101085902A (zh) 2007-12-12
CN101085902B true CN101085902B (zh) 2010-09-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101098948A Expired - Fee Related CN101085902B (zh) 2006-06-05 2007-06-05 具有改进的终点检测能力、用来对二氧化硅和氮化硅进行化学机械抛光的组合物

Country Status (8)

Country Link
US (1) US7297633B1 (https=)
JP (1) JP2007324606A (https=)
KR (1) KR20070116543A (https=)
CN (1) CN101085902B (https=)
DE (1) DE102007024142A1 (https=)
FR (1) FR2901802B1 (https=)
SG (1) SG137837A1 (https=)
TW (1) TW200804577A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2090400A4 (en) * 2006-09-15 2010-11-03 Hitachi Chemical Co Ltd MEANS FOR CHEMICAL-MECHANICAL POLISHING (CMP), ADDITIVE SOLUTION FOR THE CMP POLISHERS AND METHOD FOR POLISHING A SUBSTRATE THROUGH THE USE OF THE POLISHING AGENT AND THE ADDITIVE SOLUTION
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
EP2460176A1 (de) 2009-12-18 2012-06-06 RENA GmbH Verfahren zum abtragen von substratschichten
US8671685B2 (en) * 2010-03-08 2014-03-18 Tma Power, Llc Microturbine Sun Tracker
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
JP2012146974A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
WO2023145572A1 (ja) * 2022-01-28 2023-08-03 Ａｇｃ株式会社 研磨剤、研磨剤用添加液および研磨方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1637100A (zh) * 2003-11-26 2005-07-13 Cmp罗姆和哈斯电子材料控股公司 用于化学机械抛光氧化硅和氮化硅的组合物和方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
JP3449600B2 (ja) * 1998-05-06 2003-09-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 化学反応による終点の検出
US6126848A (en) * 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6228280B1 (en) * 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
EP0957086A3 (en) * 1998-05-14 2003-02-12 Haldor Topsoe A/S Process for the removal of metal compounds from an aqueous acid solution
US6021679A (en) * 1998-08-04 2000-02-08 International Business Machines Corporation Probe for slurry gas sampling
US6899784B1 (en) * 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1637100A (zh) * 2003-11-26 2005-07-13 Cmp罗姆和哈斯电子材料控股公司 用于化学机械抛光氧化硅和氮化硅的组合物和方法

Also Published As

Publication number Publication date
FR2901802A1 (fr) 2007-12-07
KR20070116543A (ko) 2007-12-10
CN101085902A (zh) 2007-12-12
SG137837A1 (en) 2007-12-28
FR2901802B1 (fr) 2012-11-30
JP2007324606A (ja) 2007-12-13
US20070281483A1 (en) 2007-12-06
DE102007024142A1 (de) 2007-12-06
US7297633B1 (en) 2007-11-20
TW200804577A (en) 2008-01-16

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Granted publication date: 20100908

Termination date: 20130605