DE102007020903A1 - Integriertes Halbleiterschmelzsicherungsbauelement und Herstellungsverfahren - Google Patents

Integriertes Halbleiterschmelzsicherungsbauelement und Herstellungsverfahren Download PDF

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Publication number
DE102007020903A1
DE102007020903A1 DE102007020903A DE102007020903A DE102007020903A1 DE 102007020903 A1 DE102007020903 A1 DE 102007020903A1 DE 102007020903 A DE102007020903 A DE 102007020903A DE 102007020903 A DE102007020903 A DE 102007020903A DE 102007020903 A1 DE102007020903 A1 DE 102007020903A1
Authority
DE
Germany
Prior art keywords
doped polysilicon
polysilicon region
further characterized
region
fuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102007020903A
Other languages
German (de)
English (en)
Inventor
Young-Gun Ko
Ja-Hum Seongnam Ku
Min-Chul Sun
Robert Weiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Infineon Technologies North America Corp
Original Assignee
Samsung Electronics Co Ltd
Infineon Technologies North America Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Infineon Technologies North America Corp filed Critical Samsung Electronics Co Ltd
Publication of DE102007020903A1 publication Critical patent/DE102007020903A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE102007020903A 2006-04-26 2007-04-25 Integriertes Halbleiterschmelzsicherungsbauelement und Herstellungsverfahren Withdrawn DE102007020903A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/411,341 US7576407B2 (en) 2006-04-26 2006-04-26 Devices and methods for constructing electrically programmable integrated fuses for low power applications
US11/411,341 2006-04-26

Publications (1)

Publication Number Publication Date
DE102007020903A1 true DE102007020903A1 (de) 2007-10-31

Family

ID=38542581

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007020903A Withdrawn DE102007020903A1 (de) 2006-04-26 2007-04-25 Integriertes Halbleiterschmelzsicherungsbauelement und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US7576407B2 (https=)
JP (1) JP5165272B2 (https=)
KR (1) KR100872882B1 (https=)
CN (1) CN101068015B (https=)
DE (1) DE102007020903A1 (https=)

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US20070284693A1 (en) * 2006-06-09 2007-12-13 International Business Machines Corporation Electrically programmable fuse with asymmetric structure
JP2008166441A (ja) * 2006-12-27 2008-07-17 Spansion Llc 半導体装置およびその製造方法
US7732898B2 (en) * 2007-02-02 2010-06-08 Infineon Technologies Ag Electrical fuse and associated methods
US7732893B2 (en) * 2007-03-07 2010-06-08 International Business Machines Corporation Electrical fuse structure for higher post-programming resistance
US7851885B2 (en) * 2007-03-07 2010-12-14 International Business Machines Corporation Methods and systems involving electrically programmable fuses
US7888771B1 (en) * 2007-05-02 2011-02-15 Xilinx, Inc. E-fuse with scalable filament link
US7759766B2 (en) * 2007-08-22 2010-07-20 International Business Machines Corporation Electrical fuse having a thin fuselink
US7619295B2 (en) * 2007-10-10 2009-11-17 Fairchild Semiconductor Corporation Pinched poly fuse
KR100967037B1 (ko) * 2007-10-17 2010-06-29 주식회사 하이닉스반도체 퓨즈 박스 및 그 형성 방법
US8791547B2 (en) * 2008-01-21 2014-07-29 Infineon Technologies Ag Avalanche diode having an enhanced defect concentration level and method of making the same
US8829645B2 (en) * 2008-06-12 2014-09-09 International Business Machines Corporation Structure and method to form e-fuse with enhanced current crowding
US9892221B2 (en) 2009-02-20 2018-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of generating a layout including a fuse layout pattern
US8519507B2 (en) * 2009-06-29 2013-08-27 International Business Machines Corporation Electrically programmable fuse using anisometric contacts and fabrication method
DE102009055368A1 (de) * 2009-12-29 2012-03-29 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Siliziumbasiertes Halbleiterbauelement mit E-Sicherungen, die durch eine eingebettete Halbleiterlegierung hergestellt sind
DE102009055439A1 (de) * 2009-12-31 2011-07-07 GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG, 01109 Halbleiterbauelement mit halbleiterbasierten e-Sicherungen mit besserer Programmiereffizienz durch erhöhte Metallagglomeration und/oder Hohlraumbildung
US8987102B2 (en) * 2011-07-27 2015-03-24 Applied Materials, Inc. Methods of forming a metal silicide region in an integrated circuit
US8981523B2 (en) * 2012-03-14 2015-03-17 International Business Machines Corporation Programmable fuse structure and methods of forming
CN102760720B (zh) * 2012-07-27 2015-05-20 上海华力微电子有限公司 电子可编程熔丝空置有源区添加方法以及电子可编程熔丝
CN102738075A (zh) * 2012-07-27 2012-10-17 上海华力微电子有限公司 电子可编程熔丝空置接触孔添加方法以及电子可编程熔丝
CN103915410B (zh) * 2013-01-08 2017-06-13 中芯国际集成电路制造(上海)有限公司 半导体器件和半导体器件的制作方法
US9305879B2 (en) * 2013-05-09 2016-04-05 Globalfoundries Inc. E-fuse with hybrid metallization
US9171801B2 (en) 2013-05-09 2015-10-27 Globalfoundries U.S. 2 Llc E-fuse with hybrid metallization
US9536830B2 (en) 2013-05-09 2017-01-03 Globalfoundries Inc. High performance refractory metal / copper interconnects to eliminate electromigration
CN105826238A (zh) * 2015-01-06 2016-08-03 中芯国际集成电路制造(上海)有限公司 电可编程熔丝结构及其形成方法
US9754903B2 (en) * 2015-10-29 2017-09-05 Globalfoundries Inc. Semiconductor structure with anti-efuse device
US10811354B2 (en) 2016-06-30 2020-10-20 Intel Corporation Fuse array for integrated circuit
KR102573736B1 (ko) 2016-09-19 2023-09-04 에스케이하이닉스 주식회사 퓨즈 구조체 및 그것의 제조방법
CN109937275B (zh) 2016-12-26 2021-01-08 学校法人金泽工业大学 经染色的聚丙烯纤维结构物和使用其的服装
WO2018125223A1 (en) * 2016-12-30 2018-07-05 Intel Corporation Fuse lines and plugs for semiconductor devices
US10615119B2 (en) * 2017-12-12 2020-04-07 International Business Machines Corporation Back end of line electrical fuse structure and method of fabrication
JP2024015652A (ja) * 2022-07-25 2024-02-06 ルネサスエレクトロニクス株式会社 半導体装置

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JPH04147648A (ja) * 1990-10-11 1992-05-21 Nec Ic Microcomput Syst Ltd 半導体装置
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US5708291A (en) * 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
US5783467A (en) * 1995-12-29 1998-07-21 Vlsi Technology, Inc. Method of making antifuse structures using implantation of both neutral and dopant species
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US5899707A (en) * 1996-08-20 1999-05-04 Vlsi Technology, Inc. Method for making doped antifuse structures
US5976943A (en) * 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
US5899736A (en) * 1997-09-19 1999-05-04 Siemens Aktiengesellschaft Techniques for forming electrically blowable fuses on an integrated circuit
JPH11187843A (ja) 1997-12-25 1999-07-13 Lotte Co Ltd 肥満改善用の飲食組成物およびこれを含有する飲食物
US6323535B1 (en) * 2000-06-16 2001-11-27 Infineon Technologies North America Corp. Electrical fuses employing reverse biasing to enhance programming
US6570207B2 (en) 2000-12-13 2003-05-27 International Business Machines Corporation Structure and method for creating vertical capacitor and anti-fuse in DRAM process employing vertical array device cell complex
US6707129B2 (en) * 2001-12-18 2004-03-16 United Microelectronics Corp. Fuse structure integrated wire bonding on the low k interconnect and method for making the same
US6815797B1 (en) * 2002-01-08 2004-11-09 National Semiconductor Corporation Silicide bridged anti-fuse
US6798684B2 (en) * 2002-04-04 2004-09-28 Broadcom Corporation Methods and systems for programmable memory using silicided poly-silicon fuses
US6580156B1 (en) 2002-04-04 2003-06-17 Broadcom Corporation Integrated fuse with regions of different doping within the fuse neck
JP2004228369A (ja) 2003-01-23 2004-08-12 Sony Corp 半導体装置およびフューズ溶断方法
JP2004335608A (ja) * 2003-05-02 2004-11-25 Sony Corp 半導体装置
US6806107B1 (en) * 2003-05-08 2004-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse element test structure and method
US6956277B1 (en) * 2004-03-23 2005-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Diode junction poly fuse

Also Published As

Publication number Publication date
KR20070105871A (ko) 2007-10-31
KR100872882B1 (ko) 2008-12-10
CN101068015B (zh) 2012-07-18
JP2007294961A (ja) 2007-11-08
US7576407B2 (en) 2009-08-18
US20070252237A1 (en) 2007-11-01
JP5165272B2 (ja) 2013-03-21
CN101068015A (zh) 2007-11-07

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Date Code Title Description
R005 Application deemed withdrawn due to failure to request examination

Effective date: 20140426