DE102006008734A1 - Verfahren zum Herstellen eines transparenten Maskenrohlingsubstrats, Verfahren zum Herstellen eines Maskenrohlings und Verfahren zum Herstellen einer Belichtungsmaske - Google Patents
Verfahren zum Herstellen eines transparenten Maskenrohlingsubstrats, Verfahren zum Herstellen eines Maskenrohlings und Verfahren zum Herstellen einer Belichtungsmaske Download PDFInfo
- Publication number
- DE102006008734A1 DE102006008734A1 DE102006008734A DE102006008734A DE102006008734A1 DE 102006008734 A1 DE102006008734 A1 DE 102006008734A1 DE 102006008734 A DE102006008734 A DE 102006008734A DE 102006008734 A DE102006008734 A DE 102006008734A DE 102006008734 A1 DE102006008734 A1 DE 102006008734A1
- Authority
- DE
- Germany
- Prior art keywords
- transparent substrate
- mask
- area
- shape information
- flatness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 181
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000004088 simulation Methods 0.000 claims abstract description 53
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 238000005259 measurement Methods 0.000 claims abstract description 26
- 238000004364 calculation method Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000005540 biological transmission Effects 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 25
- 239000010408 film Substances 0.000 description 12
- 230000010363 phase shift Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 230000005484 gravity Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007689 inspection Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005050936A JP5153998B2 (ja) | 2005-02-25 | 2005-02-25 | マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法 |
| JP2005-50936 | 2005-02-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102006008734A1 true DE102006008734A1 (de) | 2006-09-28 |
Family
ID=36932293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102006008734A Withdrawn DE102006008734A1 (de) | 2005-02-25 | 2006-02-24 | Verfahren zum Herstellen eines transparenten Maskenrohlingsubstrats, Verfahren zum Herstellen eines Maskenrohlings und Verfahren zum Herstellen einer Belichtungsmaske |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7901840B2 (https=) |
| JP (1) | JP5153998B2 (https=) |
| KR (1) | KR101170851B1 (https=) |
| CN (1) | CN1862376B (https=) |
| DE (1) | DE102006008734A1 (https=) |
| TW (1) | TWI454835B (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4856798B2 (ja) * | 2006-10-18 | 2012-01-18 | Ｈｏｙａ株式会社 | 反射型マスクブランクの製造方法及び反射型マスクの製造方法、並びに半導体装置の製造方法 |
| CN101681092B (zh) * | 2007-05-09 | 2012-07-25 | 株式会社尼康 | 光罩用基板、光罩用基板的成形构件、光罩用基板的制造方法、光罩、及使用光罩的曝光方法 |
| JP5222660B2 (ja) * | 2008-08-07 | 2013-06-26 | Ｈｏｙａ株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法 |
| JP5331638B2 (ja) * | 2008-11-04 | 2013-10-30 | Ｈｏｙａ株式会社 | 表示装置製造用フォトマスクの製造方法及び描画装置 |
| WO2010061828A1 (ja) * | 2008-11-26 | 2010-06-03 | Hoya株式会社 | マスクブランク用基板 |
| JP4728414B2 (ja) | 2009-03-25 | 2011-07-20 | Ｈｏｙａ株式会社 | マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法 |
| FR2955654B1 (fr) * | 2010-01-25 | 2012-03-30 | Soitec Silicon Insulator Technologies | Systeme et procede d'evaluation de deformations inhomogenes dans des plaques multicouches |
| JP5683930B2 (ja) | 2010-01-29 | 2015-03-11 | Hoya株式会社 | マスクブランク用基板、マスクブランク、転写用マスク及び半導体デバイスの製造方法 |
| CN102822743B (zh) * | 2010-03-30 | 2014-09-03 | Hoya株式会社 | 掩模坯料用基板的制造方法、掩模坯料的制造方法、转印用掩模的制造方法以及半导体器件的制造方法 |
| EP2434345B1 (en) * | 2010-09-27 | 2013-07-03 | Imec | Method and system for evaluating euv mask flatness |
| KR101343292B1 (ko) * | 2011-04-12 | 2013-12-18 | 호야 가부시키가이샤 | 포토마스크용 기판, 포토마스크 및 패턴 전사 방법 |
| JP5937873B2 (ja) * | 2011-04-13 | 2016-06-22 | Hoya株式会社 | フォトマスク用基板セット、フォトマスクセット、及びパターン転写方法 |
| JP5688564B2 (ja) * | 2011-06-20 | 2015-03-25 | パナソニックＩｐマネジメント株式会社 | 電子部品実装用装置および電子部品実装用の作業実行方法 |
| KR101447968B1 (ko) * | 2013-04-16 | 2014-10-13 | 주식회사 고영테크놀러지 | 기판 검사를 위한 기준평면 설정방법 및 기준평면을 이용한 기판 검사방법 |
| KR101395055B1 (ko) * | 2013-05-28 | 2014-05-14 | 삼성코닝정밀소재 주식회사 | 면취 작업대 평탄도 측정 방법 |
| JP5658331B2 (ja) * | 2013-07-31 | 2015-01-21 | Hoya株式会社 | マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法 |
| KR102147237B1 (ko) * | 2013-12-27 | 2020-08-24 | 삼성전자주식회사 | 제어 장치를 서버에 등록하는 방법 및 장치 |
| JP6398927B2 (ja) * | 2015-09-18 | 2018-10-03 | 信越化学工業株式会社 | フォトマスクブランク、その製造方法及びフォトマスク |
| CN108500826A (zh) * | 2017-02-27 | 2018-09-07 | 东莞新科技术研究开发有限公司 | 晶圆背面研磨方法 |
| TWI686763B (zh) * | 2018-02-14 | 2020-03-01 | 德德知通股份有限公司 | 透過網路進行商標電子延展申請的系統、伺服端計算機裝置及計算機可讀取的儲存媒體 |
| NL2027098B1 (en) * | 2020-01-16 | 2021-10-14 | Asml Netherlands Bv | Pellicle membrane for a lithographic apparatus |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2678942B2 (ja) * | 1989-05-18 | 1997-11-19 | 東芝機械株式会社 | パターンの描画または検査方法 |
| JP3071362B2 (ja) * | 1994-07-15 | 2000-07-31 | 信越化学工業株式会社 | ＡｒＦエキシマレーザリソグラフィー用合成石英マスク基板およびその製造方法 |
| JPH08264431A (ja) * | 1995-03-28 | 1996-10-11 | Canon Inc | 走査投影露光装置 |
| JP3427141B2 (ja) * | 1995-07-18 | 2003-07-14 | 株式会社ニコン | パターン位置測定方法及び装置 |
| JP2002169265A (ja) * | 2000-12-01 | 2002-06-14 | Hoya Corp | フォトマスクブランクス及びフォトマスクブランクスの製造方法 |
| US6537844B1 (en) | 2001-05-31 | 2003-03-25 | Kabushiki Kaisha Toshiba | Manufacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server |
| JP3947154B2 (ja) * | 2001-05-31 | 2007-07-18 | 株式会社東芝 | マスク基板情報生成方法およびマスク基板の製造方法 |
| JP3572053B2 (ja) * | 2001-05-31 | 2004-09-29 | 株式会社東芝 | 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー |
| JP2003081654A (ja) * | 2001-09-06 | 2003-03-19 | Toshiba Ceramics Co Ltd | 合成石英ガラスおよびその製造方法 |
| JP2005516240A (ja) * | 2002-01-24 | 2005-06-02 | デュポン、フォウタマスクス、インク | フォトマスクおよびそれを製造する方法 |
| JP4158885B2 (ja) * | 2002-04-22 | 2008-10-01 | Ｈｏｙａ株式会社 | フォトマスクブランクの製造方法 |
| CN100545748C (zh) * | 2003-03-20 | 2009-09-30 | Hoya株式会社 | 中间掩模用基板及其制造方法和光刻掩模板及其制造方法 |
| DE102004014954A1 (de) * | 2003-03-27 | 2005-03-10 | Hoya Corp | Verfahren zur Herstellung eines Glassubstrats für einen Maskenrohling und Verfahren zur Herstellung eines Maskenrohlings |
| JP4232018B2 (ja) * | 2003-07-25 | 2009-03-04 | 信越化学工業株式会社 | フォトマスクブランク用基板の選定方法 |
-
2005
- 2005-02-25 JP JP2005050936A patent/JP5153998B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-23 KR KR1020060017553A patent/KR101170851B1/ko not_active Expired - Fee Related
- 2006-02-24 CN CN2006100514335A patent/CN1862376B/zh not_active Expired - Fee Related
- 2006-02-24 DE DE102006008734A patent/DE102006008734A1/de not_active Withdrawn
- 2006-02-24 TW TW095106197A patent/TWI454835B/zh not_active IP Right Cessation
- 2006-02-27 US US11/362,353 patent/US7901840B2/en active Active
-
2010
- 2010-10-14 US US12/904,970 patent/US8026025B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060094888A (ko) | 2006-08-30 |
| US20110027701A1 (en) | 2011-02-03 |
| US20060194126A1 (en) | 2006-08-31 |
| TWI454835B (zh) | 2014-10-01 |
| JP5153998B2 (ja) | 2013-02-27 |
| CN1862376B (zh) | 2011-05-04 |
| TW200702905A (en) | 2007-01-16 |
| KR101170851B1 (ko) | 2012-08-02 |
| US8026025B2 (en) | 2011-09-27 |
| JP2006235321A (ja) | 2006-09-07 |
| CN1862376A (zh) | 2006-11-15 |
| US7901840B2 (en) | 2011-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: G03F0001000000 Ipc: G03F0001600000 |
|
| R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: G03F0001000000 Ipc: G03F0001600000 Effective date: 20111216 |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20120901 |