DE102005019456A1 - Target für das Sputtern und ein Sputterverfahren unter Verwendung dieses Targets - Google Patents

Target für das Sputtern und ein Sputterverfahren unter Verwendung dieses Targets Download PDF

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Publication number
DE102005019456A1
DE102005019456A1 DE102005019456A DE102005019456A DE102005019456A1 DE 102005019456 A1 DE102005019456 A1 DE 102005019456A1 DE 102005019456 A DE102005019456 A DE 102005019456A DE 102005019456 A DE102005019456 A DE 102005019456A DE 102005019456 A1 DE102005019456 A1 DE 102005019456A1
Authority
DE
Germany
Prior art keywords
target
sputtering
substrate
plasma
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102005019456A
Other languages
German (de)
English (en)
Inventor
Makoto Arai
Satoru Ishibashi
Takashi Komatsu
Noriaki Tani
Junya Kiyoto
Atsushi Ota
Isao Sugiura
Kyuzo Chigasaki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE102005019456A1 publication Critical patent/DE102005019456A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE102005019456A 2004-04-30 2005-04-25 Target für das Sputtern und ein Sputterverfahren unter Verwendung dieses Targets Withdrawn DE102005019456A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004/136145 2004-04-30
JP2004136145A JP4959118B2 (ja) 2004-04-30 2004-04-30 スパッタリング装置及びスパッタリング装置用のターゲット

Publications (1)

Publication Number Publication Date
DE102005019456A1 true DE102005019456A1 (de) 2005-11-24

Family

ID=35220135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005019456A Withdrawn DE102005019456A1 (de) 2004-04-30 2005-04-25 Target für das Sputtern und ein Sputterverfahren unter Verwendung dieses Targets

Country Status (5)

Country Link
JP (1) JP4959118B2 (https=)
KR (1) KR101108894B1 (https=)
CN (1) CN1693531B (https=)
DE (1) DE102005019456A1 (https=)
TW (1) TWI414621B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009014067B4 (de) * 2008-03-21 2014-02-13 Tokyo Electron Limited Plasmabearbeitungsvorrichtung

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
GB0613877D0 (en) * 2006-07-13 2006-08-23 Teer Coatings Ltd Coating apparatus and coating for an article
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
JP4537479B2 (ja) * 2008-11-28 2010-09-01 キヤノンアネルバ株式会社 スパッタリング装置
JP5414340B2 (ja) * 2009-04-24 2014-02-12 株式会社アルバック スパッタリング方法
CN103348035B (zh) * 2011-04-18 2015-08-12 吉坤日矿日石金属株式会社 溅射靶
WO2013088600A1 (ja) * 2011-12-12 2013-06-20 キヤノンアネルバ株式会社 スパッタリング装置、ターゲットおよびシールド
CN102586744B (zh) * 2011-12-30 2014-05-07 余姚康富特电子材料有限公司 靶材及其形成方法
CN103938164B (zh) * 2013-01-22 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Ito薄膜溅射工艺方法及ito薄膜溅射设备
CN105039915B (zh) * 2015-07-28 2018-01-05 东莞市汇成真空科技有限公司 一种放电弧斑满布靶面的真空阴极电弧源
EP3880862B1 (en) 2018-11-14 2024-06-05 Applied Materials, Inc. Tilted magnetron in a pvd sputtering deposition chamber

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2030599U (zh) * 1987-12-17 1989-01-11 成都电讯工程学院 一种平面磁控溅射靶
JPH06248444A (ja) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp スパッタリング用ターゲット
JP3442831B2 (ja) * 1993-10-04 2003-09-02 株式会社日立製作所 半導体装置の製造方法
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
JP2000345330A (ja) * 1999-06-02 2000-12-12 Sony Corp スパッタリングターゲット
JP3628554B2 (ja) * 1999-07-15 2005-03-16 株式会社日鉱マテリアルズ スパッタリングターゲット
JP3791829B2 (ja) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット
JP4290323B2 (ja) * 2000-11-01 2009-07-01 キヤノンアネルバ株式会社 スパッタ成膜方法
JP2002302762A (ja) * 2001-04-04 2002-10-18 Tosoh Corp Ｉｔｏスパッタリングターゲット

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009014067B4 (de) * 2008-03-21 2014-02-13 Tokyo Electron Limited Plasmabearbeitungsvorrichtung
US8651049B2 (en) 2008-03-21 2014-02-18 Tokyo Electron Limited Plasma processing apparatus

Also Published As

Publication number Publication date
TWI414621B (zh) 2013-11-11
KR101108894B1 (ko) 2012-01-31
CN1693531B (zh) 2014-09-17
TW200538570A (en) 2005-12-01
JP4959118B2 (ja) 2012-06-20
JP2005314773A (ja) 2005-11-10
KR20060047524A (ko) 2006-05-18
CN1693531A (zh) 2005-11-09

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Legal Events

Date Code Title Description
R012 Request for examination validly filed

Effective date: 20120216

R016 Response to examination communication
R016 Response to examination communication
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee