TWI414621B - Sputtering target and sputtering method using the target - Google Patents

Sputtering target and sputtering method using the target Download PDF

Info

Publication number
TWI414621B
TWI414621B TW094111373A TW94111373A TWI414621B TW I414621 B TWI414621 B TW I414621B TW 094111373 A TW094111373 A TW 094111373A TW 94111373 A TW94111373 A TW 94111373A TW I414621 B TWI414621 B TW I414621B
Authority
TW
Taiwan
Prior art keywords
target
sputtering
outer peripheral
inclined surface
processing substrate
Prior art date
Application number
TW094111373A
Other languages
English (en)
Chinese (zh)
Other versions
TW200538570A (en
Inventor
Makoto Arai
Satoru Ishibashi
Takashi Komatsu
Noriaki Tani
Junya Kiyota
Atsushi Ota
Isao Sugiura
Kyuzo Nakamura
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200538570A publication Critical patent/TW200538570A/zh
Application granted granted Critical
Publication of TWI414621B publication Critical patent/TWI414621B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW094111373A 2004-04-30 2005-04-11 Sputtering target and sputtering method using the target TWI414621B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004136145A JP4959118B2 (ja) 2004-04-30 2004-04-30 スパッタリング装置及びスパッタリング装置用のターゲット

Publications (2)

Publication Number Publication Date
TW200538570A TW200538570A (en) 2005-12-01
TWI414621B true TWI414621B (zh) 2013-11-11

Family

ID=35220135

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111373A TWI414621B (zh) 2004-04-30 2005-04-11 Sputtering target and sputtering method using the target

Country Status (5)

Country Link
JP (1) JP4959118B2 (https=)
KR (1) KR101108894B1 (https=)
CN (1) CN1693531B (https=)
DE (1) DE102005019456A1 (https=)
TW (1) TWI414621B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
GB0613877D0 (en) * 2006-07-13 2006-08-23 Teer Coatings Ltd Coating apparatus and coating for an article
JP5264231B2 (ja) 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
JP4537479B2 (ja) * 2008-11-28 2010-09-01 キヤノンアネルバ株式会社 スパッタリング装置
JP5414340B2 (ja) * 2009-04-24 2014-02-12 株式会社アルバック スパッタリング方法
CN103348035B (zh) * 2011-04-18 2015-08-12 吉坤日矿日石金属株式会社 溅射靶
WO2013088600A1 (ja) * 2011-12-12 2013-06-20 キヤノンアネルバ株式会社 スパッタリング装置、ターゲットおよびシールド
CN102586744B (zh) * 2011-12-30 2014-05-07 余姚康富特电子材料有限公司 靶材及其形成方法
CN103938164B (zh) * 2013-01-22 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Ito薄膜溅射工艺方法及ito薄膜溅射设备
CN105039915B (zh) * 2015-07-28 2018-01-05 东莞市汇成真空科技有限公司 一种放电弧斑满布靶面的真空阴极电弧源
EP3880862B1 (en) 2018-11-14 2024-06-05 Applied Materials, Inc. Tilted magnetron in a pvd sputtering deposition chamber

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06248444A (ja) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp スパッタリング用ターゲット
JPH07102367A (ja) * 1993-10-04 1995-04-18 Hitachi Ltd スパッタターゲット及び半導体装置の製造方法
JP2000345330A (ja) * 1999-06-02 2000-12-12 Sony Corp スパッタリングターゲット
JP2002146528A (ja) * 2000-11-01 2002-05-22 Anelva Corp スパッタ成膜方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2030599U (zh) * 1987-12-17 1989-01-11 成都电讯工程学院 一种平面磁控溅射靶
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
JP3628554B2 (ja) * 1999-07-15 2005-03-16 株式会社日鉱マテリアルズ スパッタリングターゲット
JP3791829B2 (ja) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット
JP2002302762A (ja) * 2001-04-04 2002-10-18 Tosoh Corp Ｉｔｏスパッタリングターゲット

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06248444A (ja) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp スパッタリング用ターゲット
JPH07102367A (ja) * 1993-10-04 1995-04-18 Hitachi Ltd スパッタターゲット及び半導体装置の製造方法
JP2000345330A (ja) * 1999-06-02 2000-12-12 Sony Corp スパッタリングターゲット
JP2002146528A (ja) * 2000-11-01 2002-05-22 Anelva Corp スパッタ成膜方法

Also Published As

Publication number Publication date
KR101108894B1 (ko) 2012-01-31
CN1693531B (zh) 2014-09-17
DE102005019456A1 (de) 2005-11-24
TW200538570A (en) 2005-12-01
JP4959118B2 (ja) 2012-06-20
JP2005314773A (ja) 2005-11-10
KR20060047524A (ko) 2006-05-18
CN1693531A (zh) 2005-11-09

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