JP4959118B2 - スパッタリング装置及びスパッタリング装置用のターゲット - Google Patents

スパッタリング装置及びスパッタリング装置用のターゲット Download PDF

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Publication number
JP4959118B2
JP4959118B2 JP2004136145A JP2004136145A JP4959118B2 JP 4959118 B2 JP4959118 B2 JP 4959118B2 JP 2004136145 A JP2004136145 A JP 2004136145A JP 2004136145 A JP2004136145 A JP 2004136145A JP 4959118 B2 JP4959118 B2 JP 4959118B2
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Japan
Prior art keywords
target
sputtering
sputtering apparatus
processing substrate
peripheral edge
Prior art date
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Expired - Fee Related
Application number
JP2004136145A
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English (en)
Japanese (ja)
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JP2005314773A5 (https=
JP2005314773A (ja
Inventor
新井　　真
暁 石橋
孝 小松
典明 谷
淳也 清田
淳 太田
功 杉浦
久三 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2004136145A priority Critical patent/JP4959118B2/ja
Priority to TW094111373A priority patent/TWI414621B/zh
Priority to DE102005019456A priority patent/DE102005019456A1/de
Priority to KR1020050035023A priority patent/KR101108894B1/ko
Priority to CN200510068427.6A priority patent/CN1693531B/zh
Publication of JP2005314773A publication Critical patent/JP2005314773A/ja
Publication of JP2005314773A5 publication Critical patent/JP2005314773A5/ja
Application granted granted Critical
Publication of JP4959118B2 publication Critical patent/JP4959118B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2004136145A 2004-04-30 2004-04-30 スパッタリング装置及びスパッタリング装置用のターゲット Expired - Fee Related JP4959118B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004136145A JP4959118B2 (ja) 2004-04-30 2004-04-30 スパッタリング装置及びスパッタリング装置用のターゲット
TW094111373A TWI414621B (zh) 2004-04-30 2005-04-11 Sputtering target and sputtering method using the target
DE102005019456A DE102005019456A1 (de) 2004-04-30 2005-04-25 Target für das Sputtern und ein Sputterverfahren unter Verwendung dieses Targets
KR1020050035023A KR101108894B1 (ko) 2004-04-30 2005-04-27 스퍼터링용 타겟 및 이 타겟을 이용한 스퍼터링 방법
CN200510068427.6A CN1693531B (zh) 2004-04-30 2005-04-29 溅射靶及使用该靶的溅射方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004136145A JP4959118B2 (ja) 2004-04-30 2004-04-30 スパッタリング装置及びスパッタリング装置用のターゲット

Publications (3)

Publication Number Publication Date
JP2005314773A JP2005314773A (ja) 2005-11-10
JP2005314773A5 JP2005314773A5 (https=) 2007-04-05
JP4959118B2 true JP4959118B2 (ja) 2012-06-20

Family

ID=35220135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004136145A Expired - Fee Related JP4959118B2 (ja) 2004-04-30 2004-04-30 スパッタリング装置及びスパッタリング装置用のターゲット

Country Status (5)

Country Link
JP (1) JP4959118B2 (https=)
KR (1) KR101108894B1 (https=)
CN (1) CN1693531B (https=)
DE (1) DE102005019456A1 (https=)
TW (1) TWI414621B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
GB0613877D0 (en) * 2006-07-13 2006-08-23 Teer Coatings Ltd Coating apparatus and coating for an article
JP5264231B2 (ja) 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
JP4537479B2 (ja) * 2008-11-28 2010-09-01 キヤノンアネルバ株式会社 スパッタリング装置
JP5414340B2 (ja) * 2009-04-24 2014-02-12 株式会社アルバック スパッタリング方法
CN103348035B (zh) * 2011-04-18 2015-08-12 吉坤日矿日石金属株式会社 溅射靶
WO2013088600A1 (ja) * 2011-12-12 2013-06-20 キヤノンアネルバ株式会社 スパッタリング装置、ターゲットおよびシールド
CN102586744B (zh) * 2011-12-30 2014-05-07 余姚康富特电子材料有限公司 靶材及其形成方法
CN103938164B (zh) * 2013-01-22 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Ito薄膜溅射工艺方法及ito薄膜溅射设备
CN105039915B (zh) * 2015-07-28 2018-01-05 东莞市汇成真空科技有限公司 一种放电弧斑满布靶面的真空阴极电弧源
EP3880862B1 (en) 2018-11-14 2024-06-05 Applied Materials, Inc. Tilted magnetron in a pvd sputtering deposition chamber

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2030599U (zh) * 1987-12-17 1989-01-11 成都电讯工程学院 一种平面磁控溅射靶
JPH06248444A (ja) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp スパッタリング用ターゲット
JP3442831B2 (ja) * 1993-10-04 2003-09-02 株式会社日立製作所 半導体装置の製造方法
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
JP2000345330A (ja) * 1999-06-02 2000-12-12 Sony Corp スパッタリングターゲット
JP3628554B2 (ja) * 1999-07-15 2005-03-16 株式会社日鉱マテリアルズ スパッタリングターゲット
JP3791829B2 (ja) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット
JP4290323B2 (ja) * 2000-11-01 2009-07-01 キヤノンアネルバ株式会社 スパッタ成膜方法
JP2002302762A (ja) * 2001-04-04 2002-10-18 Tosoh Corp Ｉｔｏスパッタリングターゲット

Also Published As

Publication number Publication date
TWI414621B (zh) 2013-11-11
KR101108894B1 (ko) 2012-01-31
CN1693531B (zh) 2014-09-17
DE102005019456A1 (de) 2005-11-24
TW200538570A (en) 2005-12-01
JP2005314773A (ja) 2005-11-10
KR20060047524A (ko) 2006-05-18
CN1693531A (zh) 2005-11-09

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