KR101108894B1 - 스퍼터링용 타겟 및 이 타겟을 이용한 스퍼터링 방법 - Google Patents

스퍼터링용 타겟 및 이 타겟을 이용한 스퍼터링 방법 Download PDF

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Publication number
KR101108894B1
KR101108894B1 KR1020050035023A KR20050035023A KR101108894B1 KR 101108894 B1 KR101108894 B1 KR 101108894B1 KR 1020050035023 A KR1020050035023 A KR 1020050035023A KR 20050035023 A KR20050035023 A KR 20050035023A KR 101108894 B1 KR101108894 B1 KR 101108894B1
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South Korea
Prior art keywords
target
sputtering
sputter
inclined surface
plasma
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KR1020050035023A
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English (en)
Korean (ko)
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KR20060047524A (ko
Inventor
마코토 아라이
사토루 이시바시
타카시 코마추
노리아키 타니
주냐 키요타
아추시 오타
이사오 수기우라
큐조 나카무라
Original Assignee
가부시키가이샤 알박
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Publication of KR101108894B1 publication Critical patent/KR101108894B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020050035023A 2004-04-30 2005-04-27 스퍼터링용 타겟 및 이 타겟을 이용한 스퍼터링 방법 Expired - Lifetime KR101108894B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00136145 2004-04-30
JP2004136145A JP4959118B2 (ja) 2004-04-30 2004-04-30 スパッタリング装置及びスパッタリング装置用のターゲット

Publications (2)

Publication Number Publication Date
KR20060047524A KR20060047524A (ko) 2006-05-18
KR101108894B1 true KR101108894B1 (ko) 2012-01-31

Family

ID=35220135

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050035023A Expired - Lifetime KR101108894B1 (ko) 2004-04-30 2005-04-27 스퍼터링용 타겟 및 이 타겟을 이용한 스퍼터링 방법

Country Status (5)

Country Link
JP (1) JP4959118B2 (https=)
KR (1) KR101108894B1 (https=)
CN (1) CN1693531B (https=)
DE (1) DE102005019456A1 (https=)
TW (1) TWI414621B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
GB0613877D0 (en) * 2006-07-13 2006-08-23 Teer Coatings Ltd Coating apparatus and coating for an article
JP5264231B2 (ja) 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
JP4537479B2 (ja) * 2008-11-28 2010-09-01 キヤノンアネルバ株式会社 スパッタリング装置
JP5414340B2 (ja) * 2009-04-24 2014-02-12 株式会社アルバック スパッタリング方法
CN103348035B (zh) * 2011-04-18 2015-08-12 吉坤日矿日石金属株式会社 溅射靶
WO2013088600A1 (ja) * 2011-12-12 2013-06-20 キヤノンアネルバ株式会社 スパッタリング装置、ターゲットおよびシールド
CN102586744B (zh) * 2011-12-30 2014-05-07 余姚康富特电子材料有限公司 靶材及其形成方法
CN103938164B (zh) * 2013-01-22 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Ito薄膜溅射工艺方法及ito薄膜溅射设备
CN105039915B (zh) * 2015-07-28 2018-01-05 东莞市汇成真空科技有限公司 一种放电弧斑满布靶面的真空阴极电弧源
EP3880862B1 (en) 2018-11-14 2024-06-05 Applied Materials, Inc. Tilted magnetron in a pvd sputtering deposition chamber

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06248444A (ja) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp スパッタリング用ターゲット
JP2000345330A (ja) * 1999-06-02 2000-12-12 Sony Corp スパッタリングターゲット
JP2002146528A (ja) * 2000-11-01 2002-05-22 Anelva Corp スパッタ成膜方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2030599U (zh) * 1987-12-17 1989-01-11 成都电讯工程学院 一种平面磁控溅射靶
JP3442831B2 (ja) * 1993-10-04 2003-09-02 株式会社日立製作所 半導体装置の製造方法
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
JP3628554B2 (ja) * 1999-07-15 2005-03-16 株式会社日鉱マテリアルズ スパッタリングターゲット
JP3791829B2 (ja) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット
JP2002302762A (ja) * 2001-04-04 2002-10-18 Tosoh Corp Ｉｔｏスパッタリングターゲット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06248444A (ja) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp スパッタリング用ターゲット
JP2000345330A (ja) * 1999-06-02 2000-12-12 Sony Corp スパッタリングターゲット
JP2002146528A (ja) * 2000-11-01 2002-05-22 Anelva Corp スパッタ成膜方法

Also Published As

Publication number Publication date
TWI414621B (zh) 2013-11-11
CN1693531B (zh) 2014-09-17
DE102005019456A1 (de) 2005-11-24
TW200538570A (en) 2005-12-01
JP4959118B2 (ja) 2012-06-20
JP2005314773A (ja) 2005-11-10
KR20060047524A (ko) 2006-05-18
CN1693531A (zh) 2005-11-09

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