CN1693531B - 溅射靶及使用该靶的溅射方法 - Google Patents

溅射靶及使用该靶的溅射方法 Download PDF

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Publication number
CN1693531B
CN1693531B CN200510068427.6A CN200510068427A CN1693531B CN 1693531 B CN1693531 B CN 1693531B CN 200510068427 A CN200510068427 A CN 200510068427A CN 1693531 B CN1693531 B CN 1693531B
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CN
China
Prior art keywords
target
sputtering
inclined surface
magnet assembly
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN200510068427.6A
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English (en)
Chinese (zh)
Other versions
CN1693531A (zh
Inventor
新井真
石桥晓
小松孝
谷典明
清田淳也
太田淳
杉浦功
中村久三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of CN1693531A publication Critical patent/CN1693531A/zh
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Publication of CN1693531B publication Critical patent/CN1693531B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN200510068427.6A 2004-04-30 2005-04-29 溅射靶及使用该靶的溅射方法 Expired - Lifetime CN1693531B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-136145 2004-04-30
JP2004136145A JP4959118B2 (ja) 2004-04-30 2004-04-30 スパッタリング装置及びスパッタリング装置用のターゲット
JP2004136145 2004-04-30

Publications (2)

Publication Number Publication Date
CN1693531A CN1693531A (zh) 2005-11-09
CN1693531B true CN1693531B (zh) 2014-09-17

Family

ID=35220135

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200510068427.6A Expired - Lifetime CN1693531B (zh) 2004-04-30 2005-04-29 溅射靶及使用该靶的溅射方法

Country Status (5)

Country Link
JP (1) JP4959118B2 (https=)
KR (1) KR101108894B1 (https=)
CN (1) CN1693531B (https=)
DE (1) DE102005019456A1 (https=)
TW (1) TWI414621B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
GB0613877D0 (en) * 2006-07-13 2006-08-23 Teer Coatings Ltd Coating apparatus and coating for an article
JP5264231B2 (ja) 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US8992741B2 (en) * 2008-08-08 2015-03-31 Applied Materials, Inc. Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target
JP4537479B2 (ja) * 2008-11-28 2010-09-01 キヤノンアネルバ株式会社 スパッタリング装置
JP5414340B2 (ja) * 2009-04-24 2014-02-12 株式会社アルバック スパッタリング方法
CN103348035B (zh) * 2011-04-18 2015-08-12 吉坤日矿日石金属株式会社 溅射靶
WO2013088600A1 (ja) * 2011-12-12 2013-06-20 キヤノンアネルバ株式会社 スパッタリング装置、ターゲットおよびシールド
CN102586744B (zh) * 2011-12-30 2014-05-07 余姚康富特电子材料有限公司 靶材及其形成方法
CN103938164B (zh) * 2013-01-22 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 Ito薄膜溅射工艺方法及ito薄膜溅射设备
CN105039915B (zh) * 2015-07-28 2018-01-05 东莞市汇成真空科技有限公司 一种放电弧斑满布靶面的真空阴极电弧源
EP3880862B1 (en) 2018-11-14 2024-06-05 Applied Materials, Inc. Tilted magnetron in a pvd sputtering deposition chamber

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2030599U (zh) * 1987-12-17 1989-01-11 成都电讯工程学院 一种平面磁控溅射靶
US6464847B1 (en) * 1999-07-15 2002-10-15 Nikko Materials Company, Limited Sputtering target
CN1385553A (zh) * 2001-04-04 2002-12-18 东曹株式会社 铟锡氧化物溅射靶
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06248444A (ja) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp スパッタリング用ターゲット
JP3442831B2 (ja) * 1993-10-04 2003-09-02 株式会社日立製作所 半導体装置の製造方法
JP2000345330A (ja) * 1999-06-02 2000-12-12 Sony Corp スパッタリングターゲット
JP3791829B2 (ja) * 2000-08-25 2006-06-28 株式会社日鉱マテリアルズ パーティクル発生の少ないスパッタリングターゲット
JP4290323B2 (ja) * 2000-11-01 2009-07-01 キヤノンアネルバ株式会社 スパッタ成膜方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2030599U (zh) * 1987-12-17 1989-01-11 成都电讯工程学院 一种平面磁控溅射靶
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US6464847B1 (en) * 1999-07-15 2002-10-15 Nikko Materials Company, Limited Sputtering target
CN1385553A (zh) * 2001-04-04 2002-12-18 东曹株式会社 铟锡氧化物溅射靶

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2001-164359A 2001.06.19
JP特开2003-27225A 2003.01.29
JP特开平9-143706A 1997.06.03

Also Published As

Publication number Publication date
TWI414621B (zh) 2013-11-11
KR101108894B1 (ko) 2012-01-31
DE102005019456A1 (de) 2005-11-24
TW200538570A (en) 2005-12-01
JP4959118B2 (ja) 2012-06-20
JP2005314773A (ja) 2005-11-10
KR20060047524A (ko) 2006-05-18
CN1693531A (zh) 2005-11-09

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