CS199407B1 - Injection integrated circuit - Google Patents

Injection integrated circuit Download PDF

Info

Publication number
CS199407B1
CS199407B1 CS900577A CS900577A CS199407B1 CS 199407 B1 CS199407 B1 CS 199407B1 CS 900577 A CS900577 A CS 900577A CS 900577 A CS900577 A CS 900577A CS 199407 B1 CS199407 B1 CS 199407B1
Authority
CS
Czechoslovakia
Prior art keywords
transistor
electrode
integrated circuit
ele
substrate
Prior art date
Application number
CS900577A
Other languages
Czech (cs)
English (en)
Inventor
Artases R Nazarjan
Vjaceslav J Kremlev
Viljam N Kokin
Viktor I Sladkov
Boris V Venkov
Vadim V Lavrov
Original Assignee
Artases R Nazarjan
Kremlev V J
Kokin Viliam N
Viktor I Sladkov
Boris V Venkov
Vadim V Lavrov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU772441385A external-priority patent/SU602055A1/ru
Priority claimed from SU772537101A external-priority patent/SU646391A1/ru
Application filed by Artases R Nazarjan, Kremlev V J, Kokin Viliam N, Viktor I Sladkov, Boris V Venkov, Vadim V Lavrov filed Critical Artases R Nazarjan
Publication of CS199407B1 publication Critical patent/CS199407B1/cs

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09418—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CS900577A 1977-01-06 1977-12-29 Injection integrated circuit CS199407B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SU772441385A SU602055A1 (ru) 1977-01-06 1977-01-06 Интегральный логический элемент
SU772537101A SU646391A1 (ru) 1977-11-01 1977-11-01 Полевой транзистор
SU2537006 1977-11-11

Publications (1)

Publication Number Publication Date
CS199407B1 true CS199407B1 (en) 1980-07-31

Family

ID=27356306

Family Applications (1)

Application Number Title Priority Date Filing Date
CS900577A CS199407B1 (en) 1977-01-06 1977-12-29 Injection integrated circuit

Country Status (9)

Country Link
JP (1) JPS53108291A (US20050271598A1-20051208-C00001.png)
CH (1) CH616276A5 (US20050271598A1-20051208-C00001.png)
CS (1) CS199407B1 (US20050271598A1-20051208-C00001.png)
DD (1) DD136907A1 (US20050271598A1-20051208-C00001.png)
DE (1) DE2800335A1 (US20050271598A1-20051208-C00001.png)
FR (1) FR2377123A1 (US20050271598A1-20051208-C00001.png)
GB (1) GB1565918A (US20050271598A1-20051208-C00001.png)
NL (1) NL7800046A (US20050271598A1-20051208-C00001.png)
PL (1) PL119495B1 (US20050271598A1-20051208-C00001.png)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540051A (en) * 1978-09-12 1980-03-21 Mitsubishi Electric Corp T-joint and production thereof
JPS573651Y2 (US20050271598A1-20051208-C00001.png) * 1979-10-08 1982-01-22
GB2130790B (en) * 1982-10-26 1986-04-16 Plessey Co Plc Integrated injection logic device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321796C2 (de) * 1973-04-30 1982-07-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor
JPS5811102B2 (ja) * 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路

Also Published As

Publication number Publication date
PL119495B1 (en) 1982-01-30
CH616276A5 (en) 1980-03-14
JPS53108291A (en) 1978-09-20
PL203827A1 (pl) 1978-10-23
FR2377123B1 (US20050271598A1-20051208-C00001.png) 1980-05-16
FR2377123A1 (fr) 1978-08-04
DD136907A1 (de) 1979-08-01
DE2800335A1 (de) 1978-07-13
NL7800046A (nl) 1978-07-10
GB1565918A (en) 1980-04-23

Similar Documents

Publication Publication Date Title
CN101325218B (zh) 场效应晶体管、包括场效应晶体管的逻辑电路及制造方法
US7518209B2 (en) Isolation of a high-voltage diode between a high-voltage region and a low-voltage region of an integrated circuit
US9941266B2 (en) Semiconductor device
JP2017147433A (ja) 半導体装置
CN102915987A (zh) 半导体装置
US10249623B2 (en) Semiconductor integrated circuit
JPH055382B2 (US20050271598A1-20051208-C00001.png)
KR20090051611A (ko) 전력 반도체 소자
US20020197860A1 (en) Smart power device and method for fabricating the same
US6525383B1 (en) Power MOSFET
CN105895529B (zh) 半导体器件制造方法及半导体器件
CN1108814A (zh) 带有公共基区的晶体管
CS199407B1 (en) Injection integrated circuit
KR100442462B1 (ko) 전면에 차단층이 배치된 에미터 영역을 가지는 전력용반도체 소자
JP3872827B2 (ja) 高耐圧半導体素子
DE112014006726T5 (de) Halbleitervorrichtung, Leistungsmodul, Stromrichtvorrichtung, Fahrzeug und Schienenfahrzeug
JPS62109365A (ja) 半導体装置
EP0109692A1 (en) Semiconductor device for a MOSFET
JPH0563202A (ja) 半導体装置
JPS63164473A (ja) 半導体装置
JPS62217664A (ja) 半導体装置
KR101836258B1 (ko) 반도체 소자 및 그 제조 방법
Pendharkar Technology requirements for automotive electronics
JPH01251755A (ja) サイリスタ
JPS57176781A (en) Superconductive device