CN211700228U - 结合层结构 - Google Patents
结合层结构 Download PDFInfo
- Publication number
- CN211700228U CN211700228U CN201921479845.8U CN201921479845U CN211700228U CN 211700228 U CN211700228 U CN 211700228U CN 201921479845 U CN201921479845 U CN 201921479845U CN 211700228 U CN211700228 U CN 211700228U
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- Prior art keywords
- bonding layer
- diameter
- layer structure
- opening
- bonding
- Prior art date
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- 239000000463 material Substances 0.000 claims description 36
- 238000007789 sealing Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 description 35
- 239000007789 gas Substances 0.000 description 27
- 239000012530 fluid Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920005548 perfluoropolymer Polymers 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/18—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
- Y10T428/24331—Composite web or sheet including nonapertured component
- Y10T428/24339—Keyed
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Flanged Joints, Insulating Joints, And Other Joints (AREA)
- Ceramic Products (AREA)
- Mechanical Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/724,045 | 2017-10-03 | ||
| US15/724,045 US10688750B2 (en) | 2017-10-03 | 2017-10-03 | Bonding structure of E chuck to aluminum base configuration |
| CN201821592086.1U CN209461436U (zh) | 2017-10-03 | 2018-09-28 | 结合层结构 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821592086.1U Division CN209461436U (zh) | 2017-10-03 | 2018-09-28 | 结合层结构 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211700228U true CN211700228U (zh) | 2020-10-16 |
Family
ID=65896401
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921479845.8U Active CN211700228U (zh) | 2017-10-03 | 2018-09-28 | 结合层结构 |
| CN201821592086.1U Active CN209461436U (zh) | 2017-10-03 | 2018-09-28 | 结合层结构 |
| CN202510891131.1A Pending CN120727644A (zh) | 2017-10-03 | 2018-09-28 | E吸盘与铝基构造的结合结构 |
| CN201811139451.8A Active CN109599356B (zh) | 2017-10-03 | 2018-09-28 | E吸盘与铝基构造的结合结构 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821592086.1U Active CN209461436U (zh) | 2017-10-03 | 2018-09-28 | 结合层结构 |
| CN202510891131.1A Pending CN120727644A (zh) | 2017-10-03 | 2018-09-28 | E吸盘与铝基构造的结合结构 |
| CN201811139451.8A Active CN109599356B (zh) | 2017-10-03 | 2018-09-28 | E吸盘与铝基构造的结合结构 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US10688750B2 (enExample) |
| JP (3) | JP7353024B2 (enExample) |
| KR (2) | KR102669140B1 (enExample) |
| CN (4) | CN211700228U (enExample) |
| TW (2) | TWI806799B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10688750B2 (en) | 2017-10-03 | 2020-06-23 | Applied Materials, Inc. | Bonding structure of E chuck to aluminum base configuration |
| US10847402B2 (en) | 2018-04-02 | 2020-11-24 | Applied Materials, Inc. | Bond protection around porous plugs |
| US11456161B2 (en) | 2018-06-04 | 2022-09-27 | Applied Materials, Inc. | Substrate support pedestal |
| KR20240115347A (ko) | 2019-05-24 | 2024-07-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 접합 층 보호가 개선된 기판 지지 캐리어 |
| JP7291046B2 (ja) * | 2019-09-18 | 2023-06-14 | 新光電気工業株式会社 | 基板固定装置 |
| JP7319158B2 (ja) * | 2019-09-30 | 2023-08-01 | 日本特殊陶業株式会社 | 保持装置 |
| CN112908919B (zh) * | 2019-12-04 | 2024-07-09 | 中微半导体设备(上海)股份有限公司 | 静电吸盘装置及包括该静电吸盘装置的等离子体处理装置 |
| JP7458195B2 (ja) * | 2020-02-10 | 2024-03-29 | 東京エレクトロン株式会社 | 載置台、プラズマ処理装置及びクリーニング処理方法 |
| JP7634644B2 (ja) * | 2021-02-17 | 2025-02-21 | アプライド マテリアルズ インコーポレイテッド | 多孔性プラグ結合 |
| US11794296B2 (en) | 2022-02-03 | 2023-10-24 | Applied Materials, Inc. | Electrostatic chuck with porous plug |
| JP7645838B2 (ja) | 2022-03-31 | 2025-03-14 | 日本碍子株式会社 | ウエハ載置台 |
| US12340980B2 (en) | 2022-04-01 | 2025-06-24 | Applied Materials, Inc. | Plasma showerhead with improved uniformity |
| WO2024129283A1 (en) * | 2022-12-16 | 2024-06-20 | Lam Research Corporation | Electrostatic chuck with halogen modulated silicone dike |
| US20250037978A1 (en) * | 2023-07-24 | 2025-01-30 | Applied Materials, Inc. | Gas distribution assemblies for semiconductor devices |
| WO2025038231A1 (en) * | 2023-08-16 | 2025-02-20 | Lam Research Corporation | Electrostatic chuck with ceramic coating adhesion |
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| US6490144B1 (en) | 1999-11-29 | 2002-12-03 | Applied Materials, Inc. | Support for supporting a substrate in a process chamber |
| US7411331B2 (en) * | 2002-05-10 | 2008-08-12 | Massachusetts Institute Of Technology | Dielectric elastomer actuated systems and methods |
| US7789736B2 (en) * | 2006-10-13 | 2010-09-07 | Applied Materials, Inc. | Stepped retaining ring |
| KR101553423B1 (ko) | 2007-12-19 | 2015-09-15 | 램 리써치 코포레이션 | 반도체 진공 프로세싱 장치용 필름 점착제 |
| US9520314B2 (en) | 2008-12-19 | 2016-12-13 | Applied Materials, Inc. | High temperature electrostatic chuck bonding adhesive |
| US20100326602A1 (en) * | 2009-06-30 | 2010-12-30 | Intevac, Inc. | Electrostatic chuck |
| JP5604888B2 (ja) * | 2009-12-21 | 2014-10-15 | 住友大阪セメント株式会社 | 静電チャックの製造方法 |
| JP5558178B2 (ja) * | 2010-04-07 | 2014-07-23 | オリンパス株式会社 | 蛍光観察装置 |
| JP5143184B2 (ja) | 2010-05-07 | 2013-02-13 | 日本碍子株式会社 | ウエハー載置装置の製造方法 |
| KR20110138788A (ko) * | 2010-06-22 | 2011-12-28 | 하나 마이크론(주) | 적층형 반도체 패키지 |
| WO2013047555A1 (ja) | 2011-09-28 | 2013-04-04 | 住友大阪セメント株式会社 | 静電チャック装置 |
| CN103843128B (zh) * | 2011-09-30 | 2017-11-21 | 应用材料公司 | 静电夹具 |
| KR101196441B1 (ko) * | 2011-12-20 | 2012-11-01 | 이준호 | 정전 척의 리페어 방법 |
| JP6047506B2 (ja) | 2012-02-08 | 2016-12-21 | 東京エレクトロン株式会社 | 静電チャック装置 |
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| JP6110159B2 (ja) | 2013-02-22 | 2017-04-05 | 日本特殊陶業株式会社 | 複合部材及びその製造方法 |
| JP5633766B2 (ja) | 2013-03-29 | 2014-12-03 | Toto株式会社 | 静電チャック |
| KR101385950B1 (ko) * | 2013-09-16 | 2014-04-16 | 주식회사 펨빅스 | 정전척 및 정전척 제조 방법 |
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| JP5811513B2 (ja) | 2014-03-27 | 2015-11-11 | Toto株式会社 | 静電チャック |
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| CN107258012B (zh) | 2015-03-20 | 2021-04-16 | 应用材料公司 | 以高温聚合物接合剂接合至金属基底的陶瓷静电夹盘 |
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| US9608550B2 (en) | 2015-05-29 | 2017-03-28 | Lam Research Corporation | Lightup prevention using multi-layer ceramic fabrication techniques |
| US11227749B2 (en) | 2016-02-18 | 2022-01-18 | Lam Research Corporation | 3D printed plasma arrestor for an electrostatic chuck |
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| JP6604239B2 (ja) * | 2016-03-08 | 2019-11-13 | 住友大阪セメント株式会社 | 静電チャック装置 |
| JP6688715B2 (ja) | 2016-09-29 | 2020-04-28 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| US10688750B2 (en) | 2017-10-03 | 2020-06-23 | Applied Materials, Inc. | Bonding structure of E chuck to aluminum base configuration |
| JP6994981B2 (ja) | 2018-02-26 | 2022-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及び載置台の製造方法 |
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2017
- 2017-10-03 US US15/724,045 patent/US10688750B2/en active Active
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2018
- 2018-07-20 JP JP2018136555A patent/JP7353024B2/ja active Active
- 2018-09-28 CN CN201921479845.8U patent/CN211700228U/zh active Active
- 2018-09-28 CN CN201821592086.1U patent/CN209461436U/zh active Active
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| US10688750B2 (en) | 2020-06-23 |
| US11192323B2 (en) | 2021-12-07 |
| JP2019068044A (ja) | 2019-04-25 |
| CN109599356B (zh) | 2025-07-04 |
| TWI806799B (zh) | 2023-06-21 |
| TW201916246A (zh) | 2019-04-16 |
| US11794441B2 (en) | 2023-10-24 |
| KR20190039389A (ko) | 2019-04-11 |
| CN209461436U (zh) | 2019-10-01 |
| KR102669140B1 (ko) | 2024-05-29 |
| JP7353024B2 (ja) | 2023-09-29 |
| CN109599356A (zh) | 2019-04-09 |
| JP2025122029A (ja) | 2025-08-20 |
| TW202312345A (zh) | 2023-03-16 |
| KR20240074739A (ko) | 2024-05-28 |
| JP7682966B2 (ja) | 2025-05-26 |
| TWI786194B (zh) | 2022-12-11 |
| US20200276785A1 (en) | 2020-09-03 |
| US20220063236A1 (en) | 2022-03-03 |
| US20190099977A1 (en) | 2019-04-04 |
| JP2023171803A (ja) | 2023-12-05 |
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