TWI820173B - 具有嵌入式加熱器的面板 - Google Patents
具有嵌入式加熱器的面板 Download PDFInfo
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- 238000012545 processing Methods 0.000 claims abstract description 30
- 238000012546 transfer Methods 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims description 14
- 239000011148 porous material Substances 0.000 claims description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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Abstract
公開了一種用於處理腔室的面板。該面板具有主體,該主體具有多個孔隙,該多個孔隙穿過該主體形成。撓曲件形成在該主體中,部分地包圍該多個孔隙。切口在與該撓曲件的公共半徑上穿過該主體形成。一個或多個孔口從該切口的徑向內表面延伸到該主體的外表面。加熱器設置在該撓曲件與該多個孔隙之間。該撓曲件和該切口是限制來自該加熱器的熱傳遞從其經過的熱扼流器。
Description
本公開的實施方式涉及一種用於基板處理腔室的面板,並且更具體地涉及一種用於與被加熱的面板一起使用的熱扼流器。
在積體電路的製造中,使用諸如化學氣相沉積(CVD)或原子層沉積(ALD)的沉積製程來在半導體基板上沉積各種材料的膜。在其它操作中,使用諸如蝕刻的層更改製程來暴露沉積層的一部分以進行進一步沉積。通常,這些沉積或蝕刻製程以重複的方式使用來製造電子裝置(諸如半導體裝置)的各種層。
隨著技術進步,新化學物質和製程被利用來製造日益複雜的電路和半導體裝置。通常,這些新製程涉及較高處理溫度。因此,用於執行所述製程的處理部件經常被暴露於較高溫度,諸如高於350華氏度。
因此,需要改善的基板製程腔室部件以供在升高溫度下使用。
在一個實施方式中,一種處理腔室具有主體,所述主體具有側壁和底部。蓋耦接到所述主體以在其中限定處理容積。面板耦接到所述蓋。所述面板具有主體,所述主體具有第一表面、第二表面和在所述第一表面與所述第二表面之間延伸的外表面。多個孔隙穿過所述主體形成在所述第一表面與所述第二表面之間。撓曲件形成在所述主體中,環繞所述多個孔隙,部分地包圍所述多個孔隙。切口穿過所述主體鄰接所述撓曲件形成。所述切口和所述撓曲件具有公共半徑。
在另一個實施方式中,一種用於處理腔室的面板具有主體,所述主體具有第一表面、第二表面和在所述第一表面與所述第二表面之間延伸的外表面。多個孔隙穿過所述主體形成在所述第一表面與所述第二表面之間。撓曲件形成在所述主體中,環繞所述多個孔隙。所述撓曲件部分地包圍所述多個孔隙。切口穿過所述主體鄰接所述撓曲件形成,在其中限定徑向內表面和徑向外表面。所述切口和所述撓曲件具有公共半徑。
在又一個實施方式中,一種用於處理腔室的面板具有主體,所述主體具有第一表面、第二表面和在所述第一表面與所述第二表面之間延伸的外表面。多個孔隙穿過所述主體的中心部分形成在所述第一表面與所述第二表面之間。撓曲件形成在所述主體中,部分地包圍所述多個孔隙。切口形成在所述主體的所述第一表面和所述第二表面之間。徑向內表面和徑向外表面限定在所述切口內。所述切口和所述撓曲件位於公共半徑上。一個或多個孔口在所述主體的所述外表面與所述切口的所述徑向外表面之間延伸。管道從所述切口的所述徑向內表面延伸穿過所述一個或多個孔口中的每個。帽蓋設置在所述一個或多個孔口中的每個中並環繞每個管道的一部分。
本公開涉及用於處理腔室的面板。面板具有主體,主體具有穿過其中形成的多個孔隙。撓曲件形成在主體中,部分地包圍多個孔隙。切口在與撓曲件的公共半徑上穿過主體形成。一個或多個孔口從切口的徑向內表面延伸到主體的外表面。加熱器設置在撓曲件與多個孔隙之間。撓曲件和切口是限制來自加熱器的熱傳遞從其經過的熱扼流器。多個密封件設置在撓曲件的徑向外側並保持在比主體的中心部分的溫度低的溫度下。
圖1示出了根據一個實施方式的處理腔室100的部分橫截面的示意性佈置。處理腔室100包括主體102,主體102具有側壁104和底部106。蓋108耦接到主體102以在其中限定處理容積110。在一個實施方式中,主體102由金屬(諸如鋁或不銹鋼)形成。然而,可以使用適於與處理腔室100中執行的製程一起使用的任何材料。
面板136耦接到蓋108。多個孔隙150穿過面板136形成並通過形成在蓋108中的開口146與處理容積110流體連通。蓋板132耦接到面板136以在其之間限定氣室148。氣體通過形成在蓋板132中的入口埠160從氣體面板140流入氣室148中。電源154與設置在面板136中的加熱器(未示出)連通,以升高加熱器的溫度。氣體從氣室148流過被加熱的面板136中的孔隙150並進入處理容積110。
基板支撐件115設置在處理容積110內,用於在其上支撐基板W。基板支撐件115包括耦接到軸116的支撐主體114。軸116耦接到支撐主體114並通過底部106中的開口118延伸到腔室主體102外。軸116耦接到致動器120以在基板裝載位置與處理位置之間豎直地致動軸116和與其耦接的支撐主體114。波紋管190耦接到底部106和致動器120,環繞軸116,以密封在其中的處理容積110。真空系統(未示出)通過開口130流體地耦接到處理容積110,以便從處理容積110排出流出物。
為了便於處理腔室100中的基板W的處理,基板W設置在支撐主體114上,與軸116相對。電極126任選地設置在支撐主體114內並通過軸116電耦接到電源128。電極126由電源128選擇性地偏置以產生電磁場來將基板W靜電吸緊到支撐主體114。在某些實施方式中,電極126是能夠提高支撐主體114和基板W(當支撐在支撐主體114上時)的溫度的加熱電極。
圖2示出了可用作圖1的面板136的面板200的俯視圖。面板200具有圓形主體202,但是也可以使用其它形狀,諸如方形或卵形。主體202由金屬(諸如鋁或不銹鋼)形成。在一個實施方式中,主體202由兩個部分202a和202b(圖3和4)形成,這兩個部分彼此耦接(諸如通過釺焊、黏結或焊接等方法)。多個孔隙204穿過主體202形成在主體202的中心部分250中。
撓曲件206形成在主體202中並部分地包圍多個孔隙204。密封件210設置在處於主體202的上表面304(圖3和4)上、在撓曲件206的徑向外側和周圍。第二密封件212(圖3和4)類似地設置在主體202的下表面306(圖3和4)上。在一個實施方式中,密封件210、212設置在相應的密封溝槽220、222(圖3)中。在這種配置中,密封件210、212是由諸如聚四氟乙烯(PTFE)、橡膠或矽樹脂的彈性材料形成的O形環。也可以預期其它密封設計,諸如片狀墊圈或黏結劑。
圖3示出了面板200的一部分的剖視圖,其示出了撓曲件206。撓曲件206由一系列交錯通道300a、300b、300c形成,交錯通道300a、300b、300c部分地穿過主體202形成。通道300a、300b和300c中的每個在其一端與主體202的相應的相對表面之間形成細橋。例如,通道300a和300b從主體部分202a的上表面304延伸穿過主體部分202a並進入主體部分202b。在該實施方式中,通道300a和300b延伸到主體部分202b中,但是不延伸穿過主體部分202b的整個厚度。因此,通道300a和300b從上表面304延伸穿過整個主體部分202a以及主體部分202b的一部分而不到下表面306。通道300c從主體部分202b的下表面306延伸穿過主體部分202b並進入主體部分202a。在該實施方式中,通道300c延伸到主體部分202a中但不達到主體部分202a的整個厚度。因此,通道300c從下表面306延伸穿過整個主體部分202b以及主體部分202a的一部分而不到上表面304。在一個實施方式中,通道300a、300b和300c交錯,使得通道300c設置在通道300a和300b之間。在所示的實施方式中,示出了形成撓曲件206的三個通道300a、300b和300c,但是可以使用其它數量的通道,諸如一個、兩個、四個、五個或甚至更多個通道。
加熱器302設置在形成在主體202的部分202b中的溝槽310內。加熱器302中具有加熱器引線302a。撓曲件206用作熱扼流器,其限制從靠近加熱器302的區域(諸如中心部分250(圖2))到在熱扼流器的徑向外側的靠近密封件210、212的區域的熱傳遞。跨撓曲件206的溫度差值可以是例如50華氏度、100華氏度、150華氏度或甚至更高。因此,面板200的中心部分250可以由加熱器302加熱到高溫,諸如350華氏度、400華氏度、500華氏度或甚至更高,而跨越撓曲件206的靠近密封件210、212的區域維持在低於密封件210、212的熱降解溫度的溫度下。密封件的示例性溫度低於250華氏度,諸如約200華氏度,或例如約150華氏度。
熱降解溫度被認為是用於形成密封件210、212的材料開始熱降解時的溫度。因此,密封件210、212提供隔離並有助於維持氣室148(圖1)和處理容積110(圖1)中的真空。應當理解,密封件210、212可以設置在其它位置處,諸如在蓋108或蓋板132的與面板200相對的表面中。
另外,面板200在其溫度升高時膨脹。由於熱膨脹空間不足,諸如安裝硬體的約束,這種熱膨脹可能使常規面板設計過應力。撓曲件206吸收熱膨脹並使面板200在被加熱器302加熱時能夠熱膨脹而不過應力。
參考圖2,撓曲件206部分地包圍多個孔隙204。切口240穿過主體202形成在撓曲件206處。也就是說,撓曲件206的第一端206a起始於切口240處,而撓曲件206的第二端206b在跨過面板200的弧之後終止於切口240處。切口240具有的寬度大於撓曲件206的寬度,使得通道300a、300b、300c在第一端206a和第二端206b處通向切口240,如圖4中的陰影所示。
撓曲件206和切口240形成具有環繞孔隙204的圓周的環。在一個示例中,撓曲件206形成環的大於75%的圓周,諸如約85%,而切口240形成該圓周的剩餘部分。在另一個示例中,撓曲件206形成環的圓周的約95%,而切口240形成環的圓周的約5%。切口240和撓曲件206設置在公共半徑上。也就是說,切口240和撓曲件206位於距主體202的中心點的共同徑向距離處。
圖4示出了面板200的一部分的剖視圖,其示出了切口240。如圖所示,切口240延伸穿過主體202的兩個部分202a、202b,以在切口240內限定徑向內表面402和徑向外表面404。孔口408形成在主體202的外表面406與切口240的徑向外表面404之間。管道410從切口240的徑向內表面402延伸穿過孔口408。加熱器302的加熱器引線302a設置在管道410內,使得能夠在加熱器302的設置在主體202內的部分與外部電源(諸如圖1的電源154)之間連通。在圖4中,為了清楚起見,加熱器302和加熱器引線302a被示出為簡單形狀。
帽蓋420經設置以環繞管道410的在孔口408內的部分。帽蓋420具有管狀延伸件424,管狀延伸件424具有第一直徑,第一直徑的大小設定為配合在孔口408內。帽蓋420還具有肩部422,肩部422具有比管狀延伸件424的第一直徑大的第二直徑。肩部422靠著主體202的外表面406安置。開口426穿過帽蓋420形成,並且其大小設定為使管道410的一部分設置在其中。帽蓋420填充限定在孔口408與管道410之間的空間。
密封件430設置在形成在肩部422中的密封溝槽430a中並在外表面406與肩部422之間進行壓縮。類似地,密封件432設置在管狀延伸件424中的密封溝槽432a中並在管狀延伸件424與管道410之間進行壓縮。密封件430、432防止帽蓋420與主體202之間發生流體洩漏,從而有助於維持氣室148(圖1)和處理容積110(圖1)中的真空。切口240用作熱扼流器以防止從加熱器302到設置在帽蓋420中的密封件430、432的熱傳遞。因此,加熱器302可以在密封件430、432維持在亞熱降解溫度處時將面板200的中心部分加熱到高溫。應當理解,密封件430、432可以設置在其它位置處,諸如在主體202的與帽蓋420相對的表面中。
另外,管道410將加熱器302的引線302a與氣室148(圖1)和處理容積110(圖1)內的真空隔離。因此,加熱器302可以耦接到在處理容積110外的電源,諸如電源154(圖1),但是能夠加熱面板200的暴露於處理容積110的一部分。如上面所討論,撓曲件206允許主體202在被加熱器302加熱時的熱膨脹而沒有其過應力。通過形成孔口408,管道410也能夠在沒有過應力的情況下熱膨脹。帽蓋420吸收管道410的熱膨脹,同時維持管道410與主體202之間的密封。
圖5示出了面板200的側視圖,其示出了管道410,其中帽蓋420被移除。如圖所示,兩個管道410延伸穿過形成在主體202中的相應孔口408。孔口408定位在切口240內(以陰影指示)。應當理解,其它數量的管道410可以與其它數量的孔口408一起使用。例如,兩個管道410可以穿過單個孔口408設置。
本文所述的實施方式有利地提供能夠在高溫處理(諸如高於350華氏度或更高)中使用的面板。通過利用本文所述的撓曲件,面板能夠達到先進製程所利用的高溫。撓曲件使面板能夠熱膨脹而沒有過應力。另外,撓曲件提供了在面板的中心加熱的部分和設置在撓曲件的徑向外側的密封件之間的熱扼流器。密封件維持在低於用於形成密封件的材料的熱降解溫度的溫度下。如本文所述的管道和帽蓋用於容納加熱器的引線並將加熱器與處理腔室內的真空隔離。帽蓋有利地允許管道的熱膨脹而不使其過應力,並且有助於維持處理腔室內的真空。
雖然前述內容針對的是本公開的實施方式,但是可以在不脫離本公開的基本範圍的情況下設計本公開的其它和進一步實施方式,並且本公開的範圍由所附申請專利範圍決定。
100:處理腔室
102:主體
102:腔室主體
104:側壁
106:底部
108:蓋
110:處理容積
114:支撐主體
115:基板支撐件
116:軸
118:開口
120:致動器
126:電極
128:電源
130:開口
132:蓋板
136:面板
140:氣體面板
146:開口
148:氣室
150:孔隙
154:電源
160:入口埠
190:波紋管
200:面板
202:主體
204:孔隙
206:撓曲件
210:密封件
212:密封件
220:相應密封溝槽
222:相應密封溝槽
240:切口
250:中心部分
302:加熱器
304:上表面
306:表面
310:溝槽
402:內表面
404:外表面
406:外表面
408:孔口
408:相應孔口
410:管道
420:帽蓋
422:肩部
424:管狀延伸件
426:開口
430:密封件
432:密封件
202a:主體部分
202b:主體部分
206a:第一端
206b:第二端
300a:通道
300b:通道
300c:通道
302a:加熱器引線
430a:密封溝槽
432a:密封溝槽
因此,為了能夠詳細地理解本公開的上述特徵的方式,可以通過參考實施方式獲得上面簡要地概述的本公開的更具體的描述,實施方式中的一些在附圖中示出。然而,應當注意,附圖僅示出了示例性實施方式,並且因此不應視為限制本公開的範圍,因為本公開可以允許其它同等有效的實施方式。
圖1示出了根據本公開的一個實施方式的處理腔室的示意性剖視圖。
圖2示出了根據本公開的另一個實施方式的面板的俯視圖。
圖3示出了圖2的面板的一部分的剖視圖。
圖4示出了圖2的面板的一部分的剖視圖。
圖5示出了圖2的面板的一部分的透視圖。
為了便於理解,在可能情況下,使用相同的附圖標記來表示各圖共有的相同要素。預期的是,一個實施方式的要素和特徵可以有利地併入其它實施方式,而無需進一步敘述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記)
無
200:面板
202:主體
204:孔隙
206:撓曲件
206a:第一端
206b:第二端
210:密封件
240:切口
250:中心部分
410:管道
Claims (20)
- 一種處理腔室,包括: 一主體,該主體具有一側壁和一底部;一蓋,該蓋耦接到該主體,以在其中限定一處理容積;以及一面板,該面板耦接到該蓋,該面板包括:一主體,該主體具有一第一表面、一第二表面和在該第一表面與該第二表面之間延伸的一外表面;多個孔隙,該多個孔隙穿過該主體形成在該第一表面與該第二表面之間;一撓曲件,該撓曲件環繞該多個孔隙,該撓曲件部分地包圍該多個孔隙;以及一切口,該切口穿過該主體鄰接該撓曲件形成,該切口和該撓曲件具有一公共半徑。
- 如請求項1所述的處理腔室,其中該切口和該撓曲件形成環繞該多個孔隙的一環,該撓曲件形成該環的一圓周的約95%,並且該切口形成該環的該圓周的約5%。
- 如請求項1所述的處理腔室,其中該撓曲件包括多個交錯通道,並且其中該通道各自在該撓曲件的一第一端和一第二端處通向該切口。
- 如請求項1所述的處理腔室,其中該撓曲件被配置為吸收該面板的熱膨脹。
- 如請求項1所述的處理腔室,其中該面板的該主體包括耦接在一起以形成該主體的一第一主體部分和一第二主體部分。
- 一種面板,包括: 一主體,該主體具有一第一表面、一第二表面和在該第一表面與該第二表面之間延伸的一外表面; 多個孔隙,該多個孔隙穿過該主體形成在該第一表面與該第二表面之間; 撓曲件,該撓曲件環繞該多個孔隙,該撓曲件部分地包圍該多個孔隙;以及 一切口,該切口穿過該主體鄰接該撓曲件形成,該切口在其中限定一徑向內表面和一徑向外表面,並且該切口和該撓曲件具有一公共半徑。
- 如請求項6所述的面板,其中該切口和該撓曲件形成環繞該多個孔隙的一環,該撓曲件形成該環的圓周的約95%,並且該切口形成該環的該圓周的約5%。
- 如請求項6所述的面板,其中該撓曲件包括多個交錯通道,並且其中該通道各自在該撓曲件的一第一端和一第二端處通向該切口。
- 如請求項6所述的面板,其中該撓曲件被配置為吸收該面板的熱膨脹。
- 如請求項6所述的面板,其中該面板的該主體包括耦接在一起以形成該主體的一第一主體部分和一第二主體部分。
- 如請求項6所述的面板,進一步包括形成在該第一表面中的一第一密封溝槽和形成在該第二表面中的一第二密封溝槽,其中該第一密封溝槽和該第二密封溝槽包圍該撓曲件和該切口。
- 一種面板,包括: 一主體,該主體具有一第一表面、一第二表面和在該第一表面與該第二表面之間延伸的一外表面; 多個孔隙,該多個孔隙穿過該主體的一中心部分形成在該第一表面與該第二表面之間; 一撓曲件,該撓曲件部分地包圍該多個孔隙; 一切口,該切口形成在該主體的該第一表面和該第二表面之間,該切口在其中限定一徑向內表面和一徑向外表面,其中該切口和該撓曲件具有一公共半徑; 一個或多個孔口,該一個或多個孔口在該主體的該外表面與該切口的該徑向外表面之間延伸; 一管道,該管道從該切口的該徑向內表面延伸穿過該一個或多個孔口中的每個;以及 一帽蓋,該帽蓋設置在該一個或多個孔口中的每個中並環繞每個管道的一部分。
- 如請求項12所述的面板,進一步包括一加熱器,該加熱器環繞該多個孔隙並被配置為加熱該主體的中心部分。
- 如請求項13所述的面板,其中該加熱器的引線設置在該管道內。
- 如請求項12所述的面板,進一步包括形成在該第一表面中的一第一密封溝槽和形成在該第二表面中的一第二密封溝槽,其中該第一密封溝槽和該第二密封溝槽包圍該撓曲件和該切口。
- 如請求項12所述的面板,其中該撓曲件是限制從該主體的該中心部分到該撓曲件的一徑向向外的區域的熱傳遞的一熱扼流器。
- 如請求項12所述的面板,其中每個帽蓋包括一肩部和一管狀延伸件。
- 如請求項12所述的面板,其中該切口是限制從該主體的該中心部分到該帽蓋的熱傳遞的一熱扼流器。
- 如請求項12所述的面板,其中該切口和該撓曲件形成環繞該多個孔隙的一環,該撓曲件形成該環的圓周的約95%,並且該切口形成該環的該圓周的約5%。
- 如請求項12所述的面板,其中該撓曲件包括多個交錯通道,並且其中該通道各自在該撓曲件的一第一端和一第二端處通向該切口。
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Also Published As
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SG11202100144UA (en) | 2021-03-30 |
TW202020215A (zh) | 2020-06-01 |
CN110808201A (zh) | 2020-02-18 |
WO2020033108A1 (en) | 2020-02-13 |
JP2021533268A (ja) | 2021-12-02 |
CN210182327U (zh) | 2020-03-24 |
KR20210030484A (ko) | 2021-03-17 |
US10889894B2 (en) | 2021-01-12 |
US20200040452A1 (en) | 2020-02-06 |
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