SG11202100144UA - Faceplate with embedded heater - Google Patents
Faceplate with embedded heaterInfo
- Publication number
- SG11202100144UA SG11202100144UA SG11202100144UA SG11202100144UA SG11202100144UA SG 11202100144U A SG11202100144U A SG 11202100144UA SG 11202100144U A SG11202100144U A SG 11202100144UA SG 11202100144U A SG11202100144U A SG 11202100144UA SG 11202100144U A SG11202100144U A SG 11202100144UA
- Authority
- SG
- Singapore
- Prior art keywords
- faceplate
- embedded heater
- heater
- embedded
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Automation & Control Theory (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Drying Of Semiconductors (AREA)
- Resistance Heating (AREA)
- Furnace Details (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862715069P | 2018-08-06 | 2018-08-06 | |
PCT/US2019/041742 WO2020033108A1 (en) | 2018-08-06 | 2019-07-13 | Faceplate with embedded heater |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202100144UA true SG11202100144UA (en) | 2021-03-30 |
Family
ID=69228404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202100144UA SG11202100144UA (en) | 2018-08-06 | 2019-07-13 | Faceplate with embedded heater |
Country Status (7)
Country | Link |
---|---|
US (1) | US10889894B2 (en) |
JP (1) | JP2021533268A (en) |
KR (1) | KR20210030484A (en) |
CN (2) | CN110808201A (en) |
SG (1) | SG11202100144UA (en) |
TW (1) | TWI820173B (en) |
WO (1) | WO2020033108A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SI3397651T1 (en) | 2015-12-29 | 2020-11-30 | Galderma S.A. | Carbohydrate crosslinker |
US11242600B2 (en) | 2020-06-17 | 2022-02-08 | Applied Materials, Inc. | High temperature face plate for deposition application |
US11851758B2 (en) * | 2021-04-20 | 2023-12-26 | Applied Materials, Inc. | Fabrication of a high temperature showerhead |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
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US5350480A (en) * | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
US5882411A (en) | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
KR100302609B1 (en) * | 1999-05-10 | 2001-09-13 | 김영환 | Temperature controllable gas distributor |
US6307184B1 (en) | 1999-07-12 | 2001-10-23 | Fsi International, Inc. | Thermal processing chamber for heating and cooling wafer-like objects |
JP4672113B2 (en) * | 2000-07-07 | 2011-04-20 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
JP4791637B2 (en) * | 2001-01-22 | 2011-10-12 | キヤノンアネルバ株式会社 | CVD apparatus and processing method using the same |
US6811651B2 (en) * | 2001-06-22 | 2004-11-02 | Tokyo Electron Limited | Gas temperature control for a plasma process |
TW573053B (en) * | 2001-09-10 | 2004-01-21 | Anelva Corp | Surface processing apparatus |
US6955725B2 (en) * | 2002-08-15 | 2005-10-18 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
JP4536662B2 (en) * | 2003-09-03 | 2010-09-01 | 東京エレクトロン株式会社 | Gas processing apparatus and heat dissipation method |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US7776156B2 (en) * | 2005-02-10 | 2010-08-17 | Applied Materials, Inc. | Side RF coil and side heater for plasma processing apparatus |
KR100688838B1 (en) * | 2005-05-13 | 2007-03-02 | 삼성에스디아이 주식회사 | Apparatus for catalyst enhanced chemical vapor deposition and the catalyst enhanced chemical vapor deposition method |
JP5068471B2 (en) * | 2006-03-31 | 2012-11-07 | 東京エレクトロン株式会社 | Substrate processing equipment |
KR100849929B1 (en) | 2006-09-16 | 2008-08-26 | 주식회사 피에조닉스 | Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof |
US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
US8216418B2 (en) * | 2007-06-13 | 2012-07-10 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
US8673080B2 (en) * | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
US8137467B2 (en) * | 2007-10-16 | 2012-03-20 | Novellus Systems, Inc. | Temperature controlled showerhead |
US20090095218A1 (en) * | 2007-10-16 | 2009-04-16 | Novellus Systems, Inc. | Temperature controlled showerhead |
US8876024B2 (en) * | 2008-01-10 | 2014-11-04 | Applied Materials, Inc. | Heated showerhead assembly |
US8291856B2 (en) * | 2008-03-07 | 2012-10-23 | Tokyo Electron Limited | Gas heating device for a vapor deposition system |
US8187413B2 (en) * | 2008-03-18 | 2012-05-29 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket |
JP2010016225A (en) * | 2008-07-04 | 2010-01-21 | Tokyo Electron Ltd | Thermal control mechanism and semiconductor manufacturing device using the same |
US8221582B2 (en) * | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8272346B2 (en) * | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
US8272347B2 (en) * | 2009-09-14 | 2012-09-25 | Tokyo Electron Limited | High temperature gas heating device for a vapor deposition system |
US9034142B2 (en) | 2009-12-18 | 2015-05-19 | Novellus Systems, Inc. | Temperature controlled showerhead for high temperature operations |
US8733280B2 (en) | 2010-12-20 | 2014-05-27 | Intermolecular, Inc. | Showerhead for processing chamber |
US8470127B2 (en) * | 2011-01-06 | 2013-06-25 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
KR101970184B1 (en) * | 2011-03-01 | 2019-04-18 | 어플라이드 머티어리얼스, 인코포레이티드 | Thin heated substrate support |
US8562785B2 (en) * | 2011-05-31 | 2013-10-22 | Lam Research Corporation | Gas distribution showerhead for inductively coupled plasma etch reactor |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20140235069A1 (en) | 2013-02-15 | 2014-08-21 | Novellus Systems, Inc. | Multi-plenum showerhead with temperature control |
US9677176B2 (en) * | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
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US10431435B2 (en) * | 2014-08-01 | 2019-10-01 | Applied Materials, Inc. | Wafer carrier with independent isolated heater zones |
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JP6504017B2 (en) * | 2015-10-21 | 2019-04-24 | 東京エレクトロン株式会社 | Substrate processing equipment |
JP6606403B2 (en) * | 2015-11-05 | 2019-11-13 | 株式会社ニューフレアテクノロジー | Shower plate, vapor phase growth apparatus, and vapor phase growth method |
WO2017218044A1 (en) * | 2016-06-15 | 2017-12-21 | Applied Materials, Inc. | Gas distribution plate assembly for high power plasma etch processes |
US11004662B2 (en) * | 2017-02-14 | 2021-05-11 | Lam Research Corporation | Temperature controlled spacer for use in a substrate processing chamber |
TWI815813B (en) * | 2017-08-04 | 2023-09-21 | 荷蘭商Asm智慧財產控股公司 | Showerhead assembly for distributing a gas within a reaction chamber |
US20190048467A1 (en) | 2017-08-10 | 2019-02-14 | Applied Materials, Inc. | Showerhead and process chamber incorporating same |
KR102190954B1 (en) * | 2018-01-24 | 2020-12-14 | 어플라이드 머티어리얼스, 인코포레이티드 | High temperature faceplate with thermal choke and cooling |
-
2019
- 2019-07-12 US US16/510,845 patent/US10889894B2/en active Active
- 2019-07-13 SG SG11202100144UA patent/SG11202100144UA/en unknown
- 2019-07-13 JP JP2021505949A patent/JP2021533268A/en active Pending
- 2019-07-13 WO PCT/US2019/041742 patent/WO2020033108A1/en active Application Filing
- 2019-07-13 KR KR1020217006707A patent/KR20210030484A/en not_active Application Discontinuation
- 2019-08-05 CN CN201910717559.9A patent/CN110808201A/en active Pending
- 2019-08-05 TW TW108127689A patent/TWI820173B/en active
- 2019-08-05 CN CN201921254411.8U patent/CN210182327U/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI820173B (en) | 2023-11-01 |
WO2020033108A1 (en) | 2020-02-13 |
JP2021533268A (en) | 2021-12-02 |
KR20210030484A (en) | 2021-03-17 |
CN110808201A (en) | 2020-02-18 |
CN210182327U (en) | 2020-03-24 |
TW202020215A (en) | 2020-06-01 |
US10889894B2 (en) | 2021-01-12 |
US20200040452A1 (en) | 2020-02-06 |
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