CN110808201A - 具有嵌入式加热器的面板 - Google Patents

具有嵌入式加热器的面板 Download PDF

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CN110808201A
CN110808201A CN201910717559.9A CN201910717559A CN110808201A CN 110808201 A CN110808201 A CN 110808201A CN 201910717559 A CN201910717559 A CN 201910717559A CN 110808201 A CN110808201 A CN 110808201A
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D·黄
张宇星
K·高希
K·阿拉亚瓦里
A·K·班塞尔
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Applied Materials Inc
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Abstract

公开了一种用于处理腔室的面板。所述面板具有主体，所述主体具有多个孔隙，所述多个孔隙穿过所述主体形成。挠曲件形成在所述主体中，部分地包围所述多个孔隙。切口在与所述挠曲件的公共半径上穿过所述主体形成。一个或多个孔口从所述切口的径向内表面延伸到所述主体的外表面。加热器设置在所述挠曲件与所述多个孔隙之间。所述挠曲件和所述切口是限制来自所述加热器的热传递从其经过的热扼流器。

Description

具有嵌入式加热器的面板
技术领域
本公开的实施方式涉及一种用于基板处理腔室的面板，并且更具体地涉及一种用于与被加热的面板一起使用的热扼流器。
背景技术
在集成电路的制造中，使用诸如化学气相沉积(CVD)或原子层沉积(ALD)的沉积工艺来在半导体基板上沉积各种材料的膜。在其它操作中，使用诸如蚀刻的层更改工艺来暴露沉积层的一部分以进行进一步沉积。通常，这些沉积或蚀刻工艺以重复的方式使用来制造电子器件(诸如半导体器件)的各种层。
随着技术进步，新化学物质和工艺被利用来制造日益复杂的电路和半导体器件。通常，这些新工艺涉及较高处理温度。因此，用于执行所述工艺的处理部件经常被暴露于较高温度，诸如高于350华氏度。
因此，需要改善的基板工艺腔室部件以供在升高温度下使用。
发明内容
在一个实施方式中，一种处理腔室具有主体，所述主体具有侧壁和底部。盖耦接到所述主体以在其中限定处理容积。面板耦接到所述盖。所述面板具有主体，所述主体具有第一表面、第二表面和在所述第一表面与所述第二表面之间延伸的外表面。多个孔隙穿过所述主体形成在所述第一表面与所述第二表面之间。挠曲件形成在所述主体中，环绕所述多个孔隙，部分地包围所述多个孔隙。切口穿过所述主体邻接所述挠曲件形成。所述切口和所述挠曲件具有公共半径。
在另一个实施方式中，一种用于处理腔室的面板具有主体，所述主体具有第一表面、第二表面和在所述第一表面与所述第二表面之间延伸的外表面。多个孔隙穿过所述主体形成在所述第一表面与所述第二表面之间。挠曲件形成在所述主体中，环绕所述多个孔隙。所述挠曲件部分地包围所述多个孔隙。切口穿过所述主体邻接所述挠曲件形成，在其中限定径向内表面和径向外表面。所述切口和所述挠曲件具有公共半径。
在又一个实施方式中，一种用于处理腔室的面板具有主体，所述主体具有第一表面、第二表面和在所述第一表面与所述第二表面之间延伸的外表面。多个孔隙穿过所述主体的中心部分形成在所述第一表面与所述第二表面之间。挠曲件形成在所述主体中，部分地包围所述多个孔隙。切口形成在所述主体的所述第一表面和所述第二表面之间。径向内表面和径向外表面限定在所述切口内。所述切口和所述挠曲件位于公共半径上。一个或多个孔口在所述主体的所述外表面与所述切口的所述径向外表面之间延伸。管道从所述切口的所述径向内表面延伸穿过所述一个或多个孔口中的每个。帽盖设置在所述一个或多个孔口中的每个中并环绕每个管道的一部分。
附图说明
因此，为了能够详细地理解本公开的上述特征的方式，可以通过参考实施方式获得上面简要地概述的本公开的更具体的描述，实施方式中的一些在附图中示出。然而，应当注意，附图仅示出了示例性实施方式，并且因此不应视为限制本公开的范围，因为本公开可以允许其它同等有效的实施方式。
图1示出了根据本公开的一个实施方式的处理腔室的示意性剖视图。
图2示出了根据本公开的另一个实施方式的面板的俯视图。
图3示出了图2的面板的一部分的剖视图。
图4示出了图2的面板的一部分的剖视图。
图5示出了图2的面板的一部分的透视图。
为了便于理解，在可能情况下，使用相同的附图标记来表示各图共有的相同要素。预期的是，一个实施方式的要素和特征可以有利地并入其它实施方式，而无需进一步叙述。
具体实施方式
本公开涉及用于处理腔室的面板。面板具有主体，主体具有穿过其中形成的多个孔隙。挠曲件形成在主体中，部分地包围多个孔隙。切口在与挠曲件的公共半径上穿过主体形成。一个或多个孔口从切口的径向内表面延伸到主体的外表面。加热器设置在挠曲件与多个孔隙之间。挠曲件和切口是限制来自加热器的热传递从其经过的热扼流器。多个密封件设置在挠曲件的径向外侧并保持在比主体的中心部分的温度低的温度下。
图1示出了根据一个实施方式的处理腔室100的部分横截面的示意性布置。处理腔室100包括主体102，主体102具有侧壁104和底部106。盖108耦接到主体102以在其中限定处理容积110。在一个实施方式中，主体102由金属(诸如铝或不锈钢)形成。然而，可以使用适于与处理腔室100中执行的工艺一起使用的任何材料。
面板136耦接到盖108。多个孔隙150穿过面板136形成并通过形成在盖108中的开口146与处理容积110流体连通。盖板132耦接到面板136以在其之间限定气室148。气体通过形成在盖板132中的入口端口160从气体面板140流入气室148中。电源154与设置在面板136中的加热器(未示出)连通，以升高加热器的温度。气体从气室148流过被加热的面板136中的孔隙150并进入处理容积110。
基板支撑件115设置在处理容积110内，用于在其上支撑基板W。基板支撑件115包括耦接到轴116的支撑主体114。轴116耦接到支撑主体114并通过底部106中的开口118延伸到腔室主体102外。轴116耦接到致动器120以在基板装载位置与处理位置之间竖直地致动轴116和与其耦接的支撑主体114。波纹管190耦接到底部106和致动器120，环绕轴116，以密封在其中的处理容积110。真空系统(未示出)通过开口130流体地耦接到处理容积110，以便从处理容积110排出流出物。
为了便于处理腔室100中的基板W的处理，基板W设置在支撑主体114上，与轴116相对。电极126任选地设置在支撑主体114内并通过轴116电耦接到电源128。电极126由电源128选择性地偏置以产生电磁场来将基板W静电吸紧到支撑主体114。在某些实施方式中，电极126是能够提高支撑主体114和基板W(当支撑在支撑主体114上时)的温度的加热电极。
图2示出了可用作图1的面板136的面板200的俯视图。面板200具有圆形主体202，但是也可以使用其它形状，诸如方形或卵形。主体202由金属(诸如铝或不锈钢)形成。在一个实施方式中，主体202由两个部分202a和202b(图3和4)形成，这两个部分彼此耦接(诸如通过钎焊、粘结或焊接等方法)。多个孔隙204穿过主体202形成在主体202的中心部分250中。
挠曲件206形成在主体202中并部分地包围多个孔隙204。密封件210设置在处于主体202的上表面304(图3和4)上、在挠曲件206的径向外侧和周围。第二密封件212(图3和4)类似地设置在主体202的下表面306(图3和4)上。在一个实施方式中，密封件210、212设置在相应的密封沟槽220、222(图3)中。在这种配置中，密封件210、212是由诸如聚四氟乙烯(PTFE)、橡胶或硅树脂的弹性材料形成的O形环。也可以预期其它密封设计，诸如片状垫圈或粘结剂。
图3示出了面板200的一部分的剖视图，其示出了挠曲件206。挠曲件206由一系列交错通道300a、300b、300c形成，交错通道300a、300b、300c部分地穿过主体202形成。通道300a、300b和300c中的每个在其一端与主体202的相应的相对表面之间形成细桥。例如，通道300a和300b从主体部分202a的上表面304延伸穿过主体部分202a并进入主体部分202b。在该实施方式中，通道300a和300b延伸到主体部分202b中，但是不延伸穿过主体部分202b的整个厚度。因此，通道300a和300b从上表面304延伸穿过整个主体部分202a以及主体部分202b的一部分而不到下表面306。通道300c从主体部分202b的下表面306延伸穿过主体部分202b并进入主体部分202a。在该实施方式中，通道300c延伸到主体部分202a中但不达到主体部分202a的整个厚度。因此，通道300c从下表面306延伸穿过整个主体部分202b以及主体部分202a的一部分而不到上表面304。在一个实施方式中，通道300a、300b和300c交错，使得通道300c设置在通道300a和300b之间。在所示的实施方式中，示出了形成挠曲件206的三个通道300a、300b和300c，但是可以使用其它数量的通道，诸如一个、两个、四个、五个或甚至更多个通道。
加热器302设置在形成在主体202的部分202b中的沟槽310内。加热器302中具有加热器引线302a。挠曲件206用作热扼流器，其限制从靠近加热器302的区域(诸如中心部分250(图2))到在热扼流器的径向外侧的靠近密封件210、212的区域的热传递。跨挠曲件206的温度差值可以是例如50华氏度、100华氏度、150华氏度或甚至更高。因此，面板200的中心部分250可以由加热器302加热到高温，诸如350华氏度、400华氏度、500华氏度或甚至更高，而跨越挠曲件206的靠近密封件210、212的区域维持在低于密封件210、212的热降解温度的温度下。密封件的示例性温度低于250华氏度，诸如约200华氏度，或例如约150华氏度。
热降解温度被认为是用于形成密封件210、212的材料开始热降解时的温度。因此，密封件210、212提供隔离并有助于维持气室148(图1)和处理容积110(图1)中的真空。应当理解，密封件210、212可以设置在其它位置处，诸如在盖108或盖板132的与面板200相对的表面中。
另外，面板200在其温度升高时膨胀。由于热膨胀空间不足，诸如安装硬件的约束，这种热膨胀可能使常规面板设计过应力。挠曲件206吸收热膨胀并使面板200在被加热器302加热时能够热膨胀而不过应力。
参考图2，挠曲件206部分地包围多个孔隙204。切口240穿过主体202形成在挠曲件206处。也就是说，挠曲件206的第一端206a起始于切口240处，而挠曲件206的第二端206b在跨过面板200的弧之后终止于切口240处。切口240具有的宽度大于挠曲件206的宽度，使得通道300a、300b、300c在第一端206a和第二端206b处通向切口240，如图4中的阴影所示。
挠曲件206和切口240形成具有环绕孔隙204的圆周的环。在一个示例中，挠曲件206形成环的大于75％的圆周，诸如约85％，而切口240形成该圆周的剩余部分。在另一个示例中，挠曲件206形成环的圆周的约95％，而切口240形成环的圆周的约5％。切口240和挠曲件206设置在公共半径上。也就是说，切口240和挠曲件206位于距主体202的中心点的共同径向距离处。
图4示出了面板200的一部分的剖视图，其示出了切口240。如图所示，切口240延伸穿过主体202的两个部分202a、202b，以在切口240内限定径向内表面402和径向外表面404。孔口408形成在主体202的外表面406与切口240的径向外表面404之间。管道410从切口240的径向内表面402延伸穿过孔口408。加热器302的加热器引线302a设置在管道410内，使得能够在加热器302的设置在主体202内的部分与外部电源(诸如图1的电源154)之间连通。在图4中，为了清楚起见，加热器302和加热器引线302a被示出为简单形状。
帽盖420经设置以环绕管道410的在孔口408内的部分。帽盖420具有管状延伸件424，管状延伸件424具有第一直径，第一直径的大小设定为配合在孔口408内。帽盖420还具有肩部422，肩部422具有比管状延伸件424的第一直径大的第二直径。肩部422靠着主体202的外表面406安置。开口426穿过帽盖420形成，并且其大小设定为使管道410的一部分设置在其中。帽盖420填充限定在孔口408与管道410之间的空间。
密封件430设置在形成在肩部422中的密封沟槽430a中并在外表面406与肩部422之间进行压缩。类似地，密封件432设置在管状延伸件424中的密封沟槽432a中并在管状延伸件424与管道410之间进行压缩。密封件430、432防止帽盖420与主体202之间发生流体泄漏，从而有助于维持气室148(图1)和处理容积110(图1)中的真空。切口240用作热扼流器以防止从加热器302到设置在帽盖420中的密封件430、432的热传递。因此，加热器302可以在密封件430、432维持在亚热降解温度处时将面板200的中心部分加热到高温。应当理解，密封件430、432可以设置在其它位置处，诸如在主体202的与帽盖420相对的表面中。
另外，管道410将加热器302的引线302a与气室148(图1)和处理容积110(图1)内的真空隔离。因此，加热器302可以耦接到在处理容积110外的电源，诸如电源154(图1)，但是能够加热面板200的暴露于处理容积110的一部分。如上面所讨论，挠曲件206允许主体202在被加热器302加热时的热膨胀而没有其过应力。通过形成孔口408，管道410也能够在没有过应力的情况下热膨胀。帽盖420吸收管道410的热膨胀，同时维持管道410与主体202之间的密封。
图5示出了面板200的侧视图，其示出了管道410，其中帽盖420被移除。如图所示，两个管道410延伸穿过形成在主体202中的相应孔口408。孔口408定位在切口240内(以阴影指示)。应当理解，其它数量的管道410可以与其它数量的孔口408一起使用。例如，两个管道410可以穿过单个孔口408设置。
本文所述的实施方式有利地提供能够在高温处理(诸如高于350华氏度或更高)中使用的面板。通过利用本文所述的挠曲件，面板能够达到先进工艺所利用的高温。挠曲件使面板能够热膨胀而没有过应力。另外，挠曲件提供了在面板的中心加热的部分和设置在挠曲件的径向外侧的密封件之间的热扼流器。密封件维持在低于用于形成密封件的材料的热降解温度的温度下。如本文所述的管道和帽盖用于容纳加热器的引线并将加热器与处理腔室内的真空隔离。帽盖有利地允许管道的热膨胀而不使其过应力，并且有助于维持处理腔室内的真空。
虽然前述内容针对的是本公开的实施方式，但是可以在不脱离本公开的基本范围的情况下设计本公开的其它和进一步实施方式，并且本公开的范围由所附权利要求书确定。
元件符号列表
100 处理腔室
102 主体
102 腔室主体
104 侧壁
106 底部
108 盖
110 处理容积
114 支撑主体
115 基板支撑件
116 轴
118 开口
120 致动器
126 电极
128 电源
130 开口
132 盖板
136 面板
140 气体面板
146 开口
148 气室
150 孔隙
154 电源
160 入口端口
190 波纹管
200 面板
202 主体
204 孔隙
206 挠曲件
210 密封件
212 密封件
220 相应密封沟槽
222 相应密封沟槽
240 切口
250 中心部分
302 加热器
304 上表面
306 表面
310 沟槽
402 内表面
404 外表面
406 外表面
408 孔口
408 相应孔口
410 管道
420 帽盖
422 肩部
424 管状延伸件
426 开口
430 密封件
432 密封件
202a 主体部分
202b 主体部分
206a 第一端
206b 第二端
300a 通道
300b 通道
300c 通道
302a 加热器引线
430a 密封沟槽
432a 密封沟槽

Claims (20)

1.一种处理腔室，包括：
主体，所述主体具有侧壁和底部；
盖，所述盖耦接到所述主体，以在其中限定处理容积；以及
面板，所述面板耦接到所述盖，所述面板包括：
主体，所述主体具有第一表面、第二表面和在所述第一表面与所述第二表面之间延伸的外表面；
多个孔隙，所述多个孔隙穿过所述主体形成在所述第一表面与所述第二表面之间；
挠曲件，所述挠曲件环绕所述多个孔隙，所述挠曲件部分地包围所述多个孔隙；以及
切口，所述切口穿过所述主体邻接所述挠曲件形成，所述切口和所述挠曲件具有公共半径。
2.如权利要求1所述的处理腔室，其中所述切口和所述挠曲件形成环绕所述多个孔隙的环，所述挠曲件形成所述环的圆周的约95％，并且所述切口形成所述环的所述圆周的约5％。
3.如权利要求1所述的处理腔室，其中所述挠曲件包括多个交错通道，并且其中所述通道各自在所述挠曲件的第一端和第二端处通向所述切口。
4.如权利要求1所述的处理腔室，其中所述挠曲件被配置为吸收所述面板的热膨胀。
5.如权利要求1所述的处理腔室，其中所述面板的所述主体包括耦接在一起以形成所述主体的第一主体部分和第二主体部分。
6.一种面板，包括：
主体，所述主体具有第一表面、第二表面和在所述第一表面与所述第二表面之间延伸的外表面；
多个孔隙，所述多个孔隙穿过所述主体形成在所述第一表面与所述第二表面之间；
挠曲件，所述挠曲件环绕所述多个孔隙，所述挠曲件部分地包围所述多个孔隙；以及
切口，所述切口穿过所述主体邻接所述挠曲件形成，所述切口在其中限定径向内表面和径向外表面，并且所述切口和所述挠曲件具有公共半径。
7.如权利要求6所述的面板，其中所述切口和所述挠曲件形成环绕所述多个孔隙的环，所述挠曲件形成所述环的圆周的约95％，并且所述切口形成所述环的所述圆周的约5％。
8.如权利要求6所述的面板，其中所述挠曲件包括多个交错通道，并且其中所述通道各自在所述挠曲件的第一端和第二端处通向所述切口。
9.如权利要求6所述的面板，其中所述挠曲件被配置为吸收所述面板的热膨胀。
10.如权利要求6所述的面板，其中所述面板的所述主体包括耦接在一起以形成所述主体的第一主体部分和第二主体部分。
11.如权利要求6所述的面板，进一步包括形成在所述第一表面中的第一密封沟槽和形成在所述第二表面中的第二密封沟槽，其中所述第一密封沟槽和所述第二密封沟槽包围所述挠曲件和所述切口。
12.一种面板，包括：
主体，所述主体具有第一表面、第二表面和在所述第一表面与所述第二表面之间延伸的外表面；
多个孔隙，所述多个孔隙穿过所述主体的中心部分形成在所述第一表面与所述第二表面之间；
挠曲件，所述挠曲件部分地包围所述多个孔隙；
切口，所述切口形成在所述主体的所述第一表面和所述第二表面之间，所述切口在其中限定径向内表面和径向外表面，其中所述切口和所述挠曲件具有公共半径；
一个或多个孔口，所述一个或多个孔口在所述主体的所述外表面与所述切口的所述径向外表面之间延伸；
管道，所述管道从所述切口的所述径向内表面延伸穿过所述一个或多个孔口中的每个；以及
帽盖，所述帽盖设置在所述一个或多个孔口中的每个中并环绕每个管道的一部分。
13.如权利要求12所述的面板，进一步包括加热器，所述加热器环绕所述多个孔隙并被配置为加热所述主体的中心部分。
14.如权利要求13所述的面板，其中所述加热器的引线设置在所述管道内。
15.如权利要求12所述的面板，进一步包括形成在所述第一表面中的第一密封沟槽和形成在所述第二表面中的第二密封沟槽，其中所述第一密封沟槽和所述第二密封沟槽包围所述挠曲件和所述切口。
16.如权利要求12所述的面板，其中所述挠曲件是限制从所述主体的所述中心部分到所述挠曲件的径向向外的区域的热传递的热扼流器。
17.如权利要求12所述的面板，其中每个帽盖包括肩部和管状延伸件。
18.如权利要求12所述的面板，其中所述切口是限制从所述主体的所述中心部分到所述帽盖的热传递的热扼流器。
19.如权利要求12所述的面板，其中所述切口和所述挠曲件形成环绕所述多个孔隙的环，所述挠曲件形成所述环的圆周的约95％，并且所述切口形成所述环的所述圆周的约5％。
20.如权利要求12所述的面板，其中所述挠曲件包括多个交错通道，并且其中所述通道各自在所述挠曲件的第一端和第二端处通向所述切口。
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TWI820173B (zh) 2023-11-01
US10889894B2 (en) 2021-01-12
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