JP2021533268A - 埋込み型ヒータ付き面板 - Google Patents
埋込み型ヒータ付き面板 Download PDFInfo
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- JP2021533268A JP2021533268A JP2021505949A JP2021505949A JP2021533268A JP 2021533268 A JP2021533268 A JP 2021533268A JP 2021505949 A JP2021505949 A JP 2021505949A JP 2021505949 A JP2021505949 A JP 2021505949A JP 2021533268 A JP2021533268 A JP 2021533268A
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- 238000012545 processing Methods 0.000 claims abstract description 24
- 238000012546 transfer Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 22
- 239000000758 substrate Substances 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Automation & Control Theory (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Transforming Electric Information Into Light Information (AREA)
- Resistance Heating (AREA)
- Furnace Details (AREA)
Abstract
Description
Claims (15)
- 処理チャンバであって、
側壁と底部とを有する本体と、
前記本体に結合され、その中の処理領域を画定するリッドと、
前記リッドに結合された面板であって、
第1の表面、第2の表面、及び前記第1の表面と前記第2の表面との間に延在する外面を有する本体と、
前記第1の表面と前記第2の表面との間で前記本体を通して形成された複数の開孔と、
前記複数の開孔を取り囲むフレクシャであって、前記複数の開孔に部分的に外接するフレクシャと、
前記本体を通して形成され、前記フレクシャに当接するカットアウトであって、前記フレクシャと共通の半径を有する、カットアウトと
を含む面板と
を備える処理チャンバ。 - 前記カットアウト及び前記フレクシャは前記複数の開孔を取り囲むリングを形成し、前記フレクシャは前記リングの円周の約95%を形成し、前記カットアウトは前記リングの円周の約5%を形成する、請求項1に記載の処理チャンバ。
- 前記フレクシャが複数のインターリーブされたチャネルを含み、前記チャネルがそれぞれ、前記フレクシャの第1の端部及び第2の端部で前記カットアウトに開口する、請求項1に記載の処理チャンバ。
- 前記フレクシャが前記面板の熱膨張を吸収するように構成される、請求項1に記載の処理チャンバ。
- 前記面板の前記本体は、互いに結合されて前記本体を形成する第1の本体部分及び第2の本体部分を含む、請求項1に記載の処理チャンバ。
- 第1の表面、第2の表面、及び前記第1の表面と前記第2の表面との間に延在する外面を有する本体と、
前記第1の表面と前記第2の表面との間で前記本体を通して形成された複数の開孔と、
前記複数の開孔を取り囲むフレクシャであって、前記複数の開孔に部分的に外接するフレクシャと、
前記本体を通して形成され、前記フレクシャに当接するカットアウトであって、その中の半径方向内面及び半径方向外面を画定し、前記フレクシャと共通の半径を有する、カットアウトと
を含む面板。 - 前記カットアウト及び前記フレクシャは前記複数の開孔を取り囲むリングを形成し、前記フレクシャは前記リングの円周の約95%を形成し、前記カットアウトは前記リングの円周の約5%を形成する、請求項6に記載の面板。
- 前記フレクシャが複数のインターリーブされたチャネルを含み、前記チャネルがそれぞれ、前記フレクシャの第1の端部及び第2の端部でカットアウトに開口する、請求項6に記載の面板。
- 前記フレクシャが前記面板の熱膨張を吸収するように構成される、請求項6に記載の面板。
- 前記面板の前記本体は、互いに結合して前記本体を形成する第1の本体部分及び第2の本体部分を含む、請求項6に記載の面板。
- 前記第1の表面に形成された第1のシール溝及び前記第2の表面に形成された第2のシール溝を更に含み、前記第1のシール溝及び前記第2のシール溝は前記フレクシャ及び前記カットアウトに外接する、請求項6に記載の面板。
- 第1の表面、第2の表面、及び前記第1の表面と前記第2の表面との間に延在する外面を有する本体と、
前記第1の表面と前記第2の表面との間で前記本体の中央部分を通して形成された複数の開孔と、
前記複数の開孔に部分的に外接するフレクシャと、
前記本体の前記第1の表面と前記第2の表面との間に形成されたカットアウトであって、その中の半径方向内面及び半径方向外面を画定し、前記フレクシャと共通の半径を有し、前記複数の開孔を取り囲むリングを前記フレクシャと共に形成する、カットアウトと、
前記本体の前記外面と前記カットアウトの前記半径方向外面との間に延在する1又は複数のボアと、
前記カットアウトの前記半径方向内面から前記1又は複数のボアのそれぞれを通して延在するチューブと、
前記1又は複数のボアのそれぞれに配置されて各チューブの一部を取り囲むキャップであって、それぞれが肩部及び管状延長部を含む、キャップと
を含む面板。 - 前記複数の開孔を取り囲み、前記本体の前記中央部分を加熱するように構成されたヒータであって、前記ヒータのリードが前記チューブ内に配置されるヒータを更に含む、請求項12に記載の面板。
- 前記第1の表面に形成された第1のシール溝及び前記第2の表面に形成された第2のシール溝を更に含み、前記第1のシール溝及び前記第2のシール溝は前記フレクシャ及び前記カットアウトに外接する、請求項12に記載の面板。
- 前記フレクシャが複数のインターリーブされたチャネルを含み、前記チャネルがそれぞれ、前記フレクシャの第1の端部及び第2の端部で前記カットアウトに開口する、請求項12に記載の面板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862715069P | 2018-08-06 | 2018-08-06 | |
US62/715,069 | 2018-08-06 | ||
PCT/US2019/041742 WO2020033108A1 (en) | 2018-08-06 | 2019-07-13 | Faceplate with embedded heater |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021533268A true JP2021533268A (ja) | 2021-12-02 |
JPWO2020033108A5 JPWO2020033108A5 (ja) | 2022-07-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2021505949A Pending JP2021533268A (ja) | 2018-08-06 | 2019-07-13 | 埋込み型ヒータ付き面板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10889894B2 (ja) |
JP (1) | JP2021533268A (ja) |
KR (1) | KR20210030484A (ja) |
CN (2) | CN110808201A (ja) |
SG (1) | SG11202100144UA (ja) |
TW (1) | TWI820173B (ja) |
WO (1) | WO2020033108A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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DK3623390T3 (da) | 2015-12-29 | 2023-09-25 | Galderma Sa | Kulhydrattværbinder |
US11242600B2 (en) | 2020-06-17 | 2022-02-08 | Applied Materials, Inc. | High temperature face plate for deposition application |
US11851758B2 (en) | 2021-04-20 | 2023-12-26 | Applied Materials, Inc. | Fabrication of a high temperature showerhead |
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US5882411A (en) | 1996-10-21 | 1999-03-16 | Applied Materials, Inc. | Faceplate thermal choke in a CVD plasma reactor |
US6086677A (en) | 1998-06-16 | 2000-07-11 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
KR100302609B1 (ko) * | 1999-05-10 | 2001-09-13 | 김영환 | 온도가변 가스 분사 장치 |
US6307184B1 (en) | 1999-07-12 | 2001-10-23 | Fsi International, Inc. | Thermal processing chamber for heating and cooling wafer-like objects |
JP4672113B2 (ja) * | 2000-07-07 | 2011-04-20 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
JP4791637B2 (ja) * | 2001-01-22 | 2011-10-12 | キヤノンアネルバ株式会社 | Cvd装置とこれを用いた処理方法 |
US6811651B2 (en) * | 2001-06-22 | 2004-11-02 | Tokyo Electron Limited | Gas temperature control for a plasma process |
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- 2019-07-13 SG SG11202100144UA patent/SG11202100144UA/en unknown
- 2019-07-13 JP JP2021505949A patent/JP2021533268A/ja active Pending
- 2019-07-13 KR KR1020217006707A patent/KR20210030484A/ko active IP Right Grant
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- 2019-08-05 CN CN201921254411.8U patent/CN210182327U/zh active Active
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TW202020215A (zh) | 2020-06-01 |
TWI820173B (zh) | 2023-11-01 |
US10889894B2 (en) | 2021-01-12 |
CN110808201A (zh) | 2020-02-18 |
WO2020033108A1 (en) | 2020-02-13 |
CN210182327U (zh) | 2020-03-24 |
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