TWI831806B - 陶瓷混合絕緣板 - Google Patents

陶瓷混合絕緣板 Download PDF

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TWI831806B
TWI831806B TW108124857A TW108124857A TWI831806B TW I831806 B TWI831806 B TW I831806B TW 108124857 A TW108124857 A TW 108124857A TW 108124857 A TW108124857 A TW 108124857A TW I831806 B TWI831806 B TW I831806B
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ring
insulator
electrostatic chuck
facility
disposed
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強納森 西蒙斯
丹那 拉佛爾
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美商應用材料股份有限公司
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Abstract

本揭示內容通常係關於一種用於處理基板的靜電吸盤。該靜電吸盤包括：設施板；以及絕緣體，該絕緣體設置在冷卻基部與接地板之間。支撐主體耦接到該冷卻基部以用於在該支撐主體上支撐基板。環經配置為環繞該絕緣體。該環由耐受因暴露於製造製程中造成的降解的材料形成。該環任選地包括延伸部，該延伸部經配置為環繞該設施板。

Description

陶瓷混合絕緣板
本揭示內容的實施例大體而言係關於用於處理基板的靜電吸盤。
在積體電路的製造中，使用諸如化學氣相沉積(CVD)或原子層沉積(ALD)之類的沉積製程在半導體基板上沉積各種材料的薄膜。在其它操作中，使用諸如蝕刻之類的層更改製程來暴露沉積層的一部分以進行進一步沉積。通常，該等沉積或蝕刻製程以重複的方式用來製造電子元件(諸如半導體元件)的各種層。
隨著技術進步，正在利用新的化學品和製程來製造日益複雜的電路和半導體元件。該等化學品和製程可能損壞在製程腔室中使用的常規部件。
因此，需要可與新的製造製程一起使用的用於元件製造的腔室處理部件。
本揭示內容通常係關於一種用於處理基板的靜電吸盤。
在一個實施例中，一種製程腔室具有主體，該主體具有側壁和底部。蓋耦接到該主體以限定在該主體中的製程容積。靜電吸盤設置在該製程容積中。該靜電吸盤具有接地板、絕緣體、設施板、冷卻基部和支撐主體。該支撐主體中設置有電極。陶瓷環環繞該絕緣體設置。
在另一個實施例中，一種靜電吸盤具有接地板、絕緣體、設施板、冷卻基部和支撐主體。電極設置在該支撐主體內。該靜電吸盤還具有環，該環環繞該絕緣體設置。該環由陶瓷材料形成。
在又一個實施例中，一種靜電吸盤具有接地板、絕緣體、設施板、冷卻基部和支撐主體。電極設置在該支撐主體內。該靜電吸盤還包括環，該環具有環形部分和從該環形部分延伸的延伸部。該環形部分環繞該絕緣體，並且該延伸部環繞該設施板。
本揭示內容通常涉及一種用於處理基板的靜電吸盤。該靜電吸盤包括：設施板；以及絕緣體，該絕緣體設置在冷卻基部與接地板之間。支撐主體耦接到該冷卻基部以用於在該支撐主體上支撐基板。環被配置為環繞該絕緣體。該環由耐受因暴露於製造製程中造成的降解的材料形成。該環任選地包括延伸部，該延伸部被配置為環繞該設施板。
第1圖是根據一個實施例的示例性處理腔室100的局部橫截面的示意性佈置。處理腔室100包括具有側壁104和底部106的主體102。蓋108耦接到主體102以限定在主體102中的製程容積110。主體102一般由金屬(諸如鋁或不銹鋼)形成，但是可以利用適合與在處理腔室100中執行的製程一起使用的任何材料。
面板136耦接到蓋108。複數個孔徑150穿過面板136形成並通過形成在蓋108中的開口146與製程容積110流體連通。蓋板132耦接到面板136以限定在兩者之間的氣室148。氣體從氣體面板140通過形成在蓋板132中的入口160流入氣室148中。氣體從氣室148通過面板136中的孔徑150流入製程容積110中。
由底部106支撐的靜電吸盤115設置在製程容積110內以用於在靜電吸盤115上支撐基板W。靜電吸盤115包括耦接到基部116的支撐主體114。複數個升降桿122任選地穿過形成在靜電吸盤115中的開口121設置。升降桿122耦接到致動器120以用於升高和降低升降桿122來將基板「W」定位在支撐主體114上。真空系統(未示出)通過開口130流體地耦接到製程容積110，以便從製程容積110中排空流出物。
為了促進在處理腔室100中的基板W的處理，基板W設置在支撐主體114上。電極126設置在支撐主體114內並經由基部116電耦接到電源128。電極126由電源128選擇性地偏置以產生電磁場來將基板W靜電地吸緊到支撐主體114。在某些實施例中，電極126是能夠提高支撐主體114和支撐在支撐主體114上的基板W的溫度的加熱電極。
第2圖是示例性靜電吸盤200的橫截面。靜電吸盤200可以用作第1圖的靜電吸盤115。在第2圖中，為了清楚起見，沒有示出開口121和升降桿122。靜電吸盤200具有接地板202、絕緣體204、設施板206和冷卻基部208，冷卻基部208支撐支撐主體214。接地板202一般由諸如鋁之類的金屬形成，並且經配置為耦接到腔室的底部。接地板202包括用於耦接機構(例如螺釘或螺栓)的孔(未示出)以用於將靜電吸盤200的其它部分(諸如絕緣體204、設施板206和冷卻基部208)固定到接地板202上。
絕緣體204由聚合物材料形成，聚合物材料諸如REXOLITE®聚合物(交聯聚苯乙烯)、聚四氟乙烯(PTFE)、聚醯亞胺(PAI)、聚醚醚酮(PEEK)和聚醚醯亞胺等。絕緣體204用於減少在其中具有電極226的支撐主體214與接地板202之間的熱和電相互作用。設施板206耦接到絕緣體204並提供用於通向冷卻基部208和支撐主體214的連接的路徑(亦即，電和/或流體導管)。設施板206也由金屬(諸如鋁或不銹鋼)形成。
冷卻基部208耦接到設施板206。冷卻基部208包括設置在其中的溫度控制裝置210以用於控制耦接到冷卻基部208的支撐主體214的溫度。這裡，溫度控制裝置210是一系列的通道210a以用於使流體(諸如，水、空氣、氮、乙二醇等)從中流過。通道210a耦接到熱交換裝置(未示出)以用於控制流體的溫度。密封件220圍繞冷卻基部208的周邊設置。這裡，密封件220是設置在形成在冷卻基部208中的溝槽中的O形環。然而，其它類型的裝置可以用於密封件220。密封件220用於防止流體從冷卻基部208與設施板206之間通過。
環230設置在設施板206與接地板202之間以環繞絕緣體204。環230由耐受因暴露於製造製程中造成的降解的材料(諸如陶瓷，例如氧化鋁或氧化釔等)形成。在另一個實例中，環230由石英形成。環230具有徑向向外的面230b，徑向向外的面230b大小設成配合在形成在接地板202中的凹槽202a內。環230還具有徑向向內的表面230a，徑向向內的表面230a具有比絕緣體204的外徑要略大的直徑。因此，開口穿過環230形成，環230中設置絕緣體204。在一個實施例中，環230的厚度基本上等於絕緣體204的厚度。
密封件222設置在環230與設施板206之間以防止流體在環230與設施板206之間通過。類似地，密封件224設置在環230與接地板202之間。這裡，密封件222、224是設置在溝槽中的O形環。然而，其它類型的裝置可以用於密封件222、224。環230和密封件222、224將絕緣體204與可能損壞絕緣體204的製造製程隔離，從而延長絕緣體204的維修壽命並增加腔室的產量。
第3圖是示例性靜電吸盤300的橫截面。靜電吸盤300類似於靜電吸盤200，但是使用不同的環330和設施板306。靜電吸盤300還具有冷卻基部308、設施板306和設置在接地板302上的絕緣體302。支撐主體314耦接到冷卻基部308。冷卻基部308包括通道310a以作為溫度控制裝置310的一部分用於使流體在通道310a中流動來控制支撐主體314的溫度。
環330設置在冷卻基部308與接地板302之間。環330由耐受因暴露於製造製程中造成的降解的材料形成。示例性材料包括陶瓷（諸如氧化鋁、氧化釔等）或石英。在此實施例中，環330具有環形部分330a和延伸部330b。環形部分330a在下表面332處耦接到接地板302。環形部分330a具有徑向向外的表面330c，徑向向外的表面330c大小設為設置在形成在接地板302中的凹槽302a內。環形部分330a還具有徑向向內的表面330d，徑向向內的表面330d限定穿過環形部分330a的開口。徑向向內的表面330d具有比絕緣體304的外徑要略微大的直徑，因此絕緣體304可以設置在開口內。在一個實施例中，絕緣體304的厚度基本上等於環形部分330a的厚度。
延伸部330b從環形部分330a的上表面334延伸。延伸部330b具有徑向向外的表面330f，徑向向外的表面330f具有比環形部分330a的徑向向外的表面330c的直徑小的直徑。延伸部330b還具有徑向向內的表面330g，徑向向內的表面330g具有比環形部分330a的徑向向內的表面330d的直徑大的直徑。因此，肩部336形成在環形部分330a與延伸部330b之間。設施板306的一部分設置在肩部336上，其中延伸部330b環繞設施板306。在一個實例中，延伸部330b具有基本上等於設施板306的厚度的厚度。冷卻基部308在其與環形部分330a相對的一端處耦接到延伸部330b。
密封件320設置在延伸部330b與冷卻基部308之間以防止流體從兩者之間通過。類似地，密封件324設置在環形部分330a與接地板302之間。這裡，密封件320、324是設置在溝槽中的O形環，但是也可以使用其它裝置。環330和密封件320、324將絕緣體304和設施板306與製造製程隔離。用於形成絕緣體304和設施板306的材料易於因暴露於製造製程中而降解。然而，環330和密封件320、324保護絕緣體304和設施板306免於降解，從而延長製造壽命。另外，延伸部330b的使用減弱對設施板306與環330之間的密封件的需要。藉由減弱密封件，進一步地減少設施板306和絕緣體304潛在暴露於製造製程，從而增加對設施板306和絕緣體304的保護。
在操作期間，電極326將吸緊力施加到基板W(第1圖)。在常規設計中，絕緣體304和設施板306吸收對吸緊力的反作用力以及在腔室內存在的真空力。隨著時間推移，重複吸收會使絕緣體304和設施板306疲勞，這對該等部件造成損壞，諸如使其破裂。然而，藉由利用本文所述的實施例，環330（而非絕緣體304和設施板306）吸收由吸緊電極326施加到靜電吸盤300的力。因此，環330防止絕緣體304和設施板306因吸緊力和真空力而損壞，並且延長絕緣體304和設施板306的壽命。
在一個實例中，靜電吸盤200、300的介電性質經配置為向基板W提供足夠的吸緊力(第1圖)。例如，陶瓷材料(即，環230、330)和聚合物材料(即，設施板206、306和絕緣體204、304)的量改變靜電吸盤200、300的電容。環230、330、設施板206、306和絕緣體204、304的大小設定經選擇為提供靜電吸盤200、300的期望的電容。在第3圖中所示的一個實例中，設施板306具有切口350，切口350大小設為根據需要增大或減小靜電吸盤300的電容。切口350的大小和佈置經選擇為獲得期望的電容。
雖然前述內容針對本揭示內容的實施例，但是可以在不脫離本揭示內容的基本範圍的情況下設計本揭示內容的其它和進一步的實施例，並且本揭示內容的範圍由所附申請專利範圍確定。
100‧‧‧處理腔室 102‧‧‧主體 104‧‧‧側壁 106‧‧‧底部 108‧‧‧蓋 110‧‧‧製程容積 114‧‧‧支撐主體 115‧‧‧靜電吸盤 116‧‧‧基部 120‧‧‧致動器 121‧‧‧開口 122‧‧‧升降桿 126‧‧‧電極 128‧‧‧電源 130‧‧‧開口 132‧‧‧蓋板 136‧‧‧面板 140‧‧‧氣體面板 146‧‧‧開口 148‧‧‧氣室 150‧‧‧孔徑 160‧‧‧入口 200‧‧‧靜電吸盤 202‧‧‧接地板 202a‧‧‧凹槽 204‧‧‧絕緣體 206‧‧‧設施板 208‧‧‧冷卻基部 210‧‧‧溫度控制裝置 210a‧‧‧通道 214‧‧‧支撐主體 220‧‧‧密封件 222‧‧‧密封件 224‧‧‧密封件 226‧‧‧電極 230‧‧‧環 230a‧‧‧徑向向內的表面 230b‧‧‧徑向向外的面 300‧‧‧靜電吸盤 302‧‧‧接地板 302a‧‧‧凹槽 304‧‧‧絕緣體 306‧‧‧設施板 308‧‧‧冷卻基部 310‧‧‧溫度控制裝置 310a‧‧‧通道 314‧‧‧支撐主體 320‧‧‧密封件 324‧‧‧密封件 326‧‧‧電極 330‧‧‧環 330a‧‧‧環形部分 330b‧‧‧延伸部 330c‧‧‧徑向向外的表面 330d‧‧‧徑向向內的表面 330f‧‧‧徑向向外的表面 330g‧‧‧徑向向內的表面 332‧‧‧下表面 334‧‧‧上表面 336‧‧‧肩部 350‧‧‧切口
為了能夠詳細地理解本揭示內容的上述特徵的方式，可以藉由參考實施例獲得上文簡要地概述的本揭示內容的更特定的描述，其中一些實施例在附圖中示出。然而，應當注意，附圖僅圖示了示例性實施例，並且因此不應視為限制實施例的範圍，因為本揭示內容可以允許其它同等有效的實施例。
第1圖是示例性處理腔室的橫截面的示意性佈置。
第2圖是根據一個實施例的靜電吸盤的橫截面的示意性佈置。
第3圖是根據另一個實施例的靜電吸盤的橫截面的示意性佈置。
為了便於理解，已經盡可能地使用相同的元件符號來表示各圖共有的相同元件。預期的是，一個實施例的元件和特徵可以有益地併入其它實施例中而無需進一步敘述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
200‧‧‧靜電吸盤
202‧‧‧接地板
202a‧‧‧凹槽
204‧‧‧絕緣體
206‧‧‧設施板
208‧‧‧冷卻基部
210‧‧‧溫度控制裝置
210a‧‧‧通道
214‧‧‧支撐主體
220‧‧‧密封件
222‧‧‧密封件
224‧‧‧密封件
226‧‧‧電極
230‧‧‧環
230a‧‧‧徑向向內的表面
230b‧‧‧徑向向外的面

Claims (20)

  1. 一種製程腔室，包括：一主體，該主體具有一側壁和一底部；一蓋，該蓋耦接到該主體以限定在該主體中的一製程容積；以及一靜電吸盤，該靜電吸盤設置在該製程容積中，該靜電吸盤包括：一接地板；一絕緣體，該絕緣體設置在該接地板上；一設施板，該設施板設置在該絕緣體上；一冷卻基部，該冷卻基部設置在該設施板上；一支撐主體，該支撐主體設置在該冷卻基部上，該支撐主體中具有一電極；以及一環，該環環繞整個該絕緣體設置，其中該環由一陶瓷材料形成，其中該環或該環的一環形部分的一厚度基本上等於該絕緣體的一厚度。
  2. 如請求項1所述之製程腔室，其中該環具有一內表面，該內表面限定穿過該環的一開口，其中該絕緣體設置在該開口中。
  3. 如請求項1所述之製程腔室，其中該環包括該環形部分和一延伸部。
  4. 如請求項3所述之製程腔室，其中該絕緣體 被該環形部分環繞，並且該設施板被該延伸部環繞。
  5. 如請求項1所述之製程腔室，其中該絕緣體由一聚合物材料形成。
  6. 如請求項1所述之製程腔室，其中該環由氧化鋁或氧化釔形成。
  7. 一種靜電吸盤，包括：一接地板；一絕緣體，該絕緣體設置在該接地板上；一設施板，該設施板設置在該絕緣體上；一冷卻基部，該冷卻基部設置在該設施板上；一支撐主體，該支撐主體設置在該冷卻基部上，該支撐主體中具有一電極；以及一環，該環環繞整個該絕緣體設置，其中該環由一陶瓷材料形成，且其中該環或該環的一環形部分的一厚度基本上等於該絕緣體的一厚度。
  8. 如請求項7所述之靜電吸盤，進一步包括：一第一密封件，該第一密封件設置在該環與該設施板之間；以及一第二密封件，該第二密封件設置在該環與該接地板之間。
  9. 如請求項8所述之靜電吸盤，其中該第一密封件、該第二密封件和該環隔離設置在該環內的該絕 緣體。
  10. 如請求項7所述之靜電吸盤，其中該環具有一徑向向內的表面，該徑向向內的表面限定穿過該環的一開口，並且其中該絕緣體設置在該開口內。
  11. 如請求項7所述之靜電吸盤，其中該絕緣體由一聚合物材料形成。
  12. 如請求項7所述之靜電吸盤，其中該環由氧化鋁或氧化釔形成。
  13. 一種靜電吸盤，包括：一接地板；一絕緣體，該絕緣體設置在該接地板上；一設施板，該設施板設置在該絕緣體上；一冷卻基部，該冷卻基部設置在該設施板上；一支撐主體，該支撐主體設置在該冷卻基部上，該支撐主體中具有一電極；以及一環，該環包括：一環形部分，該環形部分環繞整個該絕緣體；以及一延伸部，該延伸部從該環形部分延伸，其中該延伸部環繞該設施板，其中該環形部分的一厚度基本上等於該絕緣體的一厚度。
  14. 如請求項13所述之靜電吸盤，進一步包 括：一第一密封件，該第一密封件設置在該環與該冷卻基部之間；以及一第二密封件，該第二密封件設置在該環與該接地板之間。
  15. 如請求項14所述之靜電吸盤，其中該第一密封件、該第二密封件和該環將設置在該環內的該絕緣體和該設施板隔離。
  16. 如請求項13所述之靜電吸盤，其中該環形部分具有一徑向向內的表面，該徑向向內的表面限定穿過該環的一開口，並且其中該絕緣體設置在該開口內。
  17. 如請求項13所述之靜電吸盤，其中該延伸部具有一徑向向內的表面，該徑向向內的表面經配置為環繞該設施板。
  18. 如請求項17所述之靜電吸盤，其中一肩部形成在該環形部分與該延伸部之間，其中該設施板的一部分設置在該肩部上。
  19. 如請求項13所述之靜電吸盤，其中該絕緣體由一聚合物材料形成。
  20. 如請求項13所述之靜電吸盤，其中該環由氧化鋁或氧化釔形成。
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