CN210296330U - 用于处理基板的工艺腔室和静电吸盘 - Google Patents

用于处理基板的工艺腔室和静电吸盘 Download PDF

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CN210296330U
CN210296330U CN201921109915.0U CN201921109915U CN210296330U CN 210296330 U CN210296330 U CN 210296330U CN 201921109915 U CN201921109915 U CN 201921109915U CN 210296330 U CN210296330 U CN 210296330U
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J·西蒙斯
D·洛弗尔
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Abstract

本公开内容整体涉及一种用于处理基板的工艺腔室和静电吸盘。所述静电吸盘包括：设施板；以及绝缘体，所述绝缘体设置在冷却基部与接地板之间。支撑主体耦接到所述冷却基部以用于在所述支撑主体上支撑基板。环被配置为环绕所述绝缘体。所述环由耐受因暴露于制造工艺中造成的降解的材料形成。所述环任选地包括延伸部，所述延伸部被配置为环绕所述设施板。

Description

用于处理基板的工艺腔室和静电吸盘
技术领域
本公开内容的实施方式整体涉及用于处理基板的工艺腔室和静电吸盘。
背景技术
在集成电路的制造中，使用诸如化学气相沉积(CVD)或原子层沉积(ALD)之类的沉积工艺在半导体基板上沉积各种材料的膜。在其它操作中，使用诸如蚀刻之类的层更改工艺来暴露沉积层的一部分以进行进一步沉积。通常，这些沉积或蚀刻工艺以重复的方式用来制造电子器件(诸如半导体器件)的各种层。
随着技术进步，正在利用新的化学品和工艺来制造日益复杂的电路和半导体器件。这些化学品和工艺可能损坏在工艺腔室中使用的常规部件。
因此，需要可与新的制造工艺一起使用的用于器件制造的腔室处理部件。
实用新型内容
本公开内容整体涉及一种用于处理基板的工艺腔室和静电吸盘。
在一个实施方式中，一种工艺腔室具有主体，所述主体具有侧壁和底部。盖耦接到所述主体以限定在所述主体中的工艺容积。静电吸盘设置在所述工艺容积中。所述静电吸盘具有接地板、绝缘体、设施板、冷却基部和支撑主体。所述支撑主体中设置有电极。陶瓷环环绕所述绝缘体设置。
在另一个实施方式中，一种静电吸盘具有接地板、绝缘体、设施板、冷却基部和支撑主体。电极设置在所述支撑主体内。所述静电吸盘还具有环，所述环环绕所述绝缘体设置。所述环由陶瓷材料形成。
在又一个实施方式中，一种静电吸盘具有接地板、绝缘体、设施板、冷却基部和支撑主体。电极设置在所述支撑主体内。所述静电吸盘还包括环，所述环具有环形部分和从所述环形部分延伸的延伸部。所述环形部分环绕所述绝缘体，并且所述延伸部环绕所述设施板。
附图说明
为了能够详细地理解本公开内容的上述特征的方式，可以通过参考实施方式获得上面简要地概述的本公开内容的更具体的描述，其中一些实施方式在附图中示出。然而，应当注意，附图仅示出了示例性实施方式，并且因此不应视为限制实施方式的范围，因为本公开内容可以允许其它同等有效的实施方式。
图1是示例性处理腔室的横截面的示意性布置。
图2是根据一个实施方式的静电吸盘的横截面的示意性布置。
图3是根据另一个实施方式的静电吸盘的横截面的示意性布置。
为了便于理解，已经尽可能地使用相同的附图标记来表示各图共有的相同元件。预期的是，一个实施方式的元件和特征可以有益地并入其它实施方式中而无需进一步叙述。
具体实施方式
本公开内容整体涉及一种用于处理基板的静电吸盘。所述静电吸盘包括：设施板；以及绝缘体，所述绝缘体设置在冷却基部与接地板之间。支撑主体耦接到所述冷却基部以用于在所述支撑主体上支撑基板。环被配置为环绕所述绝缘体。所述环由耐受因暴露于制造工艺中造成的降解的材料形成。所述环任选地包括延伸部，所述延伸部被配置为环绕所述设施板。
图1是根据一个实施方式的示例性处理腔室100的局部横截面的示意性布置。处理腔室100包括具有侧壁104和底部106的主体102。盖108耦接到主体102以限定在主体102中的工艺容积110。主体102一般由金属(诸如铝或不锈钢)形成，但是可以利用适合与在处理腔室100中执行的工艺一起使用的任何材料。
面板136耦接到盖108。多个孔径150穿过面板136形成并通过形成在盖108中的开口146与工艺容积110流体连通。盖板132耦接到面板136以限定在两者之间的气室 148。气体从气体面板140通过形成在盖板132中的入口160流入气室148中。气体从气室148通过面板136中的孔径150流入工艺容积110中。
由底部106支撑的静电吸盘115设置在工艺容积110内以用于在静电吸盘115上支撑基板W。静电吸盘115包括耦接到基部116的支撑主体114。多个升降杆122任选地穿过形成在静电吸盘115中的开口121设置。升降杆122耦接到致动器120以用于升高和降低升降杆122来将基板“W”定位在支撑主体114上。真空系统(未示出)通过开口130流体地耦接到工艺容积110，以便从工艺容积110中排空流出物。
为了促进在工艺腔室100中的基板W的处理，基板W设置在支撑主体114上。电极126设置在支撑主体114内并通过基部116电耦接到电源128。电极126由电源128 选择性地偏置以产生电磁场来将基板W静电地吸紧到支撑主体114。在某些实施方式中，电极126是能够提高支撑主体114和支撑在支撑主体114上的基板W的温度的加热电极。
图2是示例性静电吸盘200的横截面。静电吸盘200可以用作图1的静电吸盘115。在图2中，为了清楚起见，没有示出开口121和升降杆122。静电吸盘200具有接地板 202、绝缘体204、设施板206和冷却基部208，冷却基部208支撑支撑主体214。接地板202一般由诸如铝之类的金属形成，并且被配置为耦接到腔室的底部。接地板202包括用于耦接机构(例如螺钉或螺栓)的孔(未示出)以用于将静电吸盘200的其它部分(诸如绝缘体204、设施板206和冷却基部208)固定到接地板202上。
绝缘体204由聚合物材料形成，聚合物材料诸如
Figure DEST_PATH_GDA0002331215300000031
聚合物(交联聚苯乙烯)、聚四氟乙烯(PTFE)、聚酰亚胺(PAI)、聚醚醚酮(PEEK)和聚醚酰亚胺等。绝缘体204用于减少在其中具有电极226的支撑主体214与接地板202之间的热和电相互作用。设施板206耦接到绝缘体204并提供用于通向冷却基部208和支撑主体214的连接的路径(即，电和/或流体导管)。设施板206也由金属(诸如铝或不锈钢)形成。
冷却基部208耦接到设施板206。冷却基部208包括设置在其中的温度控制装置210以用于控制耦接到冷却基部208的支撑主体214的温度。这里，温度控制装置210是一系列的通道210a以用于使流体(诸如，水、空气、氮、乙二醇等)从中流过。通道210a 耦接到热交换装置(未示出)以用于控制流体的温度。密封件220围绕冷却基部208的周边设置。这里，密封件220是设置在形成在冷却基部208中的沟槽中的O形环。然而，其它类型的装置可以用于密封件220。密封件220用于防止流体从冷却基部208与设施板206之间通过。
环230设置在设施板206与接地板202之间以环绕绝缘体204。环230由耐受因暴露于制造工艺中造成的降解的材料(诸如陶瓷，例如氧化铝或氧化钇等)形成。在另一个示例中，环230由石英形成。环230具有径向向外的面230b，径向向外的面230b大小设成配合在形成在接地板202中的凹槽202a内。环230还具有径向向内的表面230a，径向向内的表面230a具有比绝缘体204的外径要略大的直径。因此，开口穿过环230 形成，环230中设置绝缘体204。在一个实施方式中，环230的厚度基本上等于绝缘体 204的厚度。
密封件222设置在环230与设施板206之间以防止流体在环230与设施板206之间通过。类似地，密封件224设置在环230与接地板202之间。这里，密封件222、224 是设置在沟槽中的O形环。然而，其它类型的装置可以用于密封件222、224。环230 和密封件222、224将绝缘体204与可能损坏绝缘体204的制造工艺隔离，从而延长绝缘体204的维修寿命并增加腔室的产量。
图3是示例性静电吸盘300的横截面。静电吸盘300类似于静电吸盘200，但是使用不同的环330和设施板306。静电吸盘300还具有冷却基部308、设施板306和设置在接地板302上的绝缘体302。支撑主体314耦接到冷却基部308。冷却基部308包括通道310a以作为温度控制装置310的一部分用于使流体在通道310a中流动来控制支撑主体314的温度。
环330设置在冷却基部308与接地板302之间。环330由耐受因暴露于制造工艺中造成的降解的材料形成。示例性材料包括陶瓷(诸如氧化铝、氧化钇等)或石英。在此实施方式中，环330具有环形部分330a和延伸部330b。环形部分330a在下表面332处耦接到接地板302。环形部分330a具有径向向外的表面330c，径向向外的表面330c大小设为设置在形成在接地板302中的凹槽302a内。环形部分330a还具有径向向内的表面330d，径向向内的表面330d限定穿过环形部分330a的开口。径向向内的表面330d 具有比绝缘体304的外径要略微大的直径，因此绝缘体304可以设置在开口内。在一个实施方式中，绝缘体304的厚度基本上等于环形部分330a的厚度。
延伸部330b从环形部分330a的上表面334延伸。延伸部330b具有径向向外的表面330f，径向向外的表面330f具有比环形部分330a的径向向外的表面330c的直径小的直径。延伸部330b还具有径向向内的表面330g，径向向内的表面330g具有比环形部分 330a的径向向内的表面330d的直径大的直径。因此，肩部336形成在环形部分330a与延伸部330b之间。设施板306的一部分设置在肩部336上，其中延伸部330b环绕设施板306。在一个示例中，延伸部330b具有基本上等于设施板306的厚度的厚度。冷却基部308在其与环形部分330a相对的一端处耦接到延伸部330b。
密封件320设置在延伸部330b与冷却基部308之间以防止流体从两者之间通过。类似地，密封件324设置在环形部分330a与接地板302之间。这里，密封件320、324 是设置在沟槽中的O形环，但是也可以使用其它装置。环330和密封件320、324将绝缘体304和设施板306与制造工艺隔离。用于形成绝缘体304和设施板306的材料易于因暴露于制造工艺中而降解。然而，环330和密封件320、324保护绝缘体304和设施板306免于降解，从而延长制造寿命。另外，延伸部330b的使用消除对设施板306与环330之间的密封件的需要。通过消除密封件，进一步地减少设施板306和绝缘体304 潜在暴露于制造工艺，从而增加对设施板306和绝缘体304的保护。
在操作期间，电极326将吸紧力施加到基板W(图1)。在常规设计中，绝缘体304 和设施板306吸收对吸紧力的反作用力以及在腔室内存在的真空力。随着时间推移，重复吸收会使绝缘体304和设施板306疲劳，这对这些部件造成损坏，诸如使其破裂。然而，通过利用本文所述的实施方式，环330(而非绝缘体304和设施板306)吸收由吸紧电极326施加到静电吸盘300的力。因此，环330防止绝缘体304和设施板306因吸紧力和真空力而损坏，并且延长绝缘体304和设施板306的寿命。
在一个示例中，静电吸盘200、300的介电性质被配置为向基板W提供足够的吸紧力(图1)。例如，陶瓷材料(即，环230、330)和聚合物材料(即，设施板206、306和绝缘体204、304)的量改变静电吸盘200、300的电容。环230、330、设施板206、306和绝缘体204、304的大小设定经选择为提供静电吸盘200、300的期望的电容。在图3中所示的一个示例中，设施板306具有切口350，切口350大小设为根据需要增大或减小静电吸盘300的电容。切口350的大小和布置经选择为获得期望的电容。
虽然前述内容针对本公开内容的实施方式，但是可以在不脱离本公开内容的基本范围的情况下设计本公开内容的其它和进一步的实施方式，并且本公开内容的范围由所附权利要求确定。

Claims (20)

1.一种用于处理基板的工艺腔室，包括：
主体，所述主体具有侧壁和底部；
盖，所述盖耦接到所述主体以限定在所述主体中的工艺容积；以及
静电吸盘，所述静电吸盘设置在所述工艺容积中，所述静电吸盘包括：
接地板；
绝缘体，所述绝缘体设置在所述接地板上；
设施板，所述设施板设置在所述绝缘体上；
冷却基部，所述冷却基部设置在所述设施板上；
支撑主体，所述支撑主体设置在所述冷却基部上，所述支撑主体中具有电极；以及
环，所述环环绕所述绝缘体设置，其中所述环由陶瓷材料形成。
2.如权利要求1所述的工艺腔室，其中所述环具有内表面，所述内表面限定穿过所述环的开口，其中所述绝缘体设置在所述开口中。
3.如权利要求1所述的工艺腔室，其中所述环包括环形部分和延伸部。
4.如权利要求3所述的工艺腔室，其中所述绝缘体被所述环形部分环绕，并且所述设施板被所述延伸部环绕。
5.如权利要求1所述的工艺腔室，其中所述绝缘体由聚合物材料形成。
6.如权利要求1所述的工艺腔室，其中所述环由氧化铝或氧化钇形成。
7.一种用于处理基板的静电吸盘，包括：
接地板；
绝缘体，所述绝缘体设置在所述接地板上；
设施板，所述设施板设置在所述绝缘体上；
冷却基部，所述冷却基部设置在所述设施板上；
支撑主体，所述支撑主体设置在所述冷却基部上，所述支撑主体中具有电极；以及
环，所述环环绕所述绝缘体设置，其中所述环由陶瓷材料形成。
8.如权利要求7所述的静电吸盘，进一步包括：
第一密封件，所述第一密封件设置在所述环与所述设施板之间；以及
第二密封件，所述第二密封件设置在所述环与所述接地板之间。
9.如权利要求8所述的静电吸盘，其中所述第一密封件、所述第二密封件和所述环隔离设置在所述环内的所述绝缘体。
10.如权利要求7所述的静电吸盘，其中所述环具有径向向内的表面，所述径向向内的表面限定穿过所述环的开口，并且其中所述绝缘体设置在所述开口内。
11.如权利要求7所述的静电吸盘，其中所述绝缘体由聚合物材料形成。
12.如权利要求7所述的静电吸盘，其中所述环由氧化铝或氧化钇形成。
13.一种用于处理基板的静电吸盘，包括：
接地板；
绝缘体，所述绝缘体设置在所述接地板上；
设施板，所述设施板设置在所述绝缘体上；
冷却基部，所述冷却基部设置在所述设施板上；
支撑主体，所述支撑主体设置在所述冷却基部上，所述支撑主体中具有电极；以及
环，所述环包括：
环形部分，所述环形部分环绕所述绝缘体；以及
延伸部，所述延伸部从所述环形部分延伸，其中所述延伸部环绕所述设施板。
14.如权利要求13所述的静电吸盘，进一步包括：
第一密封件，所述第一密封件设置在所述环与所述冷却基部之间；以及
第二密封件，所述第二密封件设置在所述环与所述接地板之间。
15.如权利要求14所述的静电吸盘，其中所述第一密封件、所述第二密封件和所述环将设置在所述环内的所述绝缘体和所述设施板隔离。
16.如权利要求13所述的静电吸盘，其中所述环形部分具有径向向内的表面，所述径向向内的表面限定穿过所述环的开口，并且其中所述绝缘体设置在所述开口内。
17.如权利要求13所述的静电吸盘，其中所述延伸部具有径向向内的表面，所述径向向内的表面被配置为环绕所述设施板。
18.如权利要求17所述的静电吸盘，其中肩部形成在所述环形部分与所述延伸部之间，其中所述设施板的一部分设置在所述肩部上。
19.如权利要求13所述的静电吸盘，其中所述绝缘体由聚合物材料形成。
20.如权利要求13所述的静电吸盘，其中所述环由氧化铝或氧化钇形成。
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