TW201916246A - 靜電夾頭至鋁基座組態之黏合結構 - Google Patents
靜電夾頭至鋁基座組態之黏合結構 Download PDFInfo
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- 229910052782 aluminium Inorganic materials 0.000 title description 2
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Abstract
本案是將靜電夾頭結合到溫度控制基部的方法。根據實施方式,在包括靜電夾頭的介電主體與溫度控制基部之間形成結合層。流孔延伸穿過介電主體並且與溫度控制基部中的流孔對準。結合層亦配置有開口,開口與介電主體和溫度控制基部中的孔對準。在一個態樣中,可以將多孔插塞設置在流孔內以保護結合層。在另一態樣中,將密封件設置在流孔內以密封結合層,使其與流孔中的氣體隔離。
Description
本案的實施方式大體而言係關於用於靜電夾頭的結合層。
靜電夾頭用於各種製造和處理操作。在半導體製造中,靜電夾頭通常用於在處理腔室中支撐基板。半導體製造使包含靜電夾頭的基板支撐件暴露於處理腔室環境並暴露於環境溫度與基板處理溫度之間的溫度範圍。為了將基板溫度維持在期望的設定點,由陶瓷形成的靜電夾頭被耦接到溫度控制基部。陶瓷夾頭部分與溫度控制基部之間的導電結合材料連接該兩個主體。
基板支撐件(包括在靜電夾頭與冷卻基部之間的介面處在延伸穿過其中的任何背側氣體通路處暴露的結合材料)被暴露於製造製程的製程氣體和製程反應副產物。該等氣體和副產物中的一些在它們與結合材料接觸時可使結合材料劣化。在結合材料的製造和形成期間,還可能造成結合材料的不一致。粘附強度和材料性質的該等變化可能造成結合材料與靜電夾頭和溫度控制基部分層或局部地改變穿過結合材料的傳熱,從而造成橫跨靜電夾頭吸持表面的溫度變化。另外,靜電夾頭和溫度控制基部可以具有不同的熱膨脹係數。當基板支撐件的溫度增加時(諸如在製程操作期間),或當介電主體和溫度控制基部具有不同溫度時,結合材料中的應力因靜電夾頭和溫度控制基部的不同的熱膨脹而增大。當局部應力超過結合材料的結合強度時,應力的此種增大可能造成結合材料的局部分層。
本案通常係關於用於將陶瓷主體固定到金屬主體的結合層。流孔延伸穿過主體。插塞和密封件任選地設置在流孔內以保護結合層。在某些實施方式中,結合層可包括兩個層以形成階梯狀的結合輪廓。
本案是將靜電夾頭結合到溫度控制基部的方法。根據實施方式,在包括靜電夾頭的介電主體與溫度控制基部之間形成結合層。流孔延伸穿過介電主體並且與溫度控制基部中的流孔對準。結合層配置有開口,開口與介電主體和溫度控制基部中的孔對準。在一個態樣中,可以將多孔插塞設置在流孔內以保護結合層免受流孔中存在的氣體影響。在另一態樣中,將密封件設置在流孔內以密封結合層,使其與流孔中存在的氣體隔離。
圖1是用於處理腔室中的示例性基板支撐件的橫截面示意圖。基板支撐件100包括介電主體102和溫度控制基部104,介電主體102形成靜電夾頭。介電主體包括陶瓷材料,諸如氧化鋁或氮化鋁。溫度控制基部104包括諸如鋁之類的金屬。溫度控制基部104被固定到柱形支柱(未圖示),柱形支柱延伸穿過處理腔室的壁以將基板支撐件100支撐在其上。或者,溫度控制基部可固定到腔室內部上的基部。基板支撐件100一般可以具有圓形形狀,但是亦可利用能夠支撐基板的其他形狀,諸如矩形或卵形。結合層106設置在介電主體102的面向溫度控制基部104的下表面和溫度控制基部104的與柱形支柱相對的面向介電主體102的上表面之間。基板W可移除地設置在介電主體102的與結合層106相對的上表面上。結合層106將介電主體102固定到並熱耦合到溫度控制基部104。
電極108設置在介電主體102內。電極108連接到電源(未圖示),電源在電極上強加電壓以在介電主體102的上表面與基板W的介面處形成電磁場。電磁場與基板W相互作用以將基板W吸持到介電主體102的表面。電極可以被偏置以提供單極或雙極夾頭。
設置在溫度控制基部104內的通道110使流體循環通過溫度控制基部104。來自溫度控制單元(未圖示)的流體(典型地是諸如Galden®之類的液體)流過通道110並返回到溫度控制單元。在某些製程中,流體用於冷卻溫度控制基部104,以便降低介電主體102和安置在其上的基板W的溫度。相反地,流體可以用於升高溫度控制基部104的溫度以加熱介電主體102和其上的基板W。在其他實施方式中,電阻加熱器(未圖示)可以設置在溫度控制基部內。在一些情況下,來自電阻加熱器的熱量結合從溫度控制基部104到流體中的傳熱用於將介電主體102或基板W維持在設定點溫度。
流孔112設置在基板支撐件100內。如圖1所示,流孔112被形成為延伸穿過介電主體102、結合層106和溫度控制基部104。在此配置中,通過流孔112引入的氣體存在於基板W的面向介電主體102的一側和介電主體102的面對表面之間的區域中。氣體被維持在足以使該氣體用作基板W與介電主體102之間的熱傳導路徑的壓力下。氣源(未圖示)耦接到流孔112。在處理期間,諸如氦之類的氣體從氣源流出並經由流孔112遞送到基板W的下表面(未暴露於腔室的處理區域的表面)。已知一些氣體使在流孔112處暴露於氣體的結合層106劣化。
圖2A和圖2B是介電主體102、溫度控制基部104和中間結合層106的橫截面示意圖。在圖2A-2B中,基板支撐件100包括與圖1的彼等類似的介電主體102和溫度控制基部104。在此,結合層106包括兩個部分層106a、106b。在圖2A-2B的實施方式中,結合層106a、106b包括結合材料片。結合層106a、106b包括有機材料,諸如矽樹脂、丙烯酸、全氟聚合物或它們的組合,但亦構想了其他材料。在某些實施方式中,結合層306另外地包括無機材料(例如氧化鋁、氮化鋁或碳化矽)以改進結合層306的特定性質,諸如熱導性。結合層106a設置在介電主體102的表面208上。結合層106b設置在溫度控制基部104的面對表面210上。結合層106a、106b在形成完整的結合層106(圖2B)之前分別地粘附到介電主體102和溫度控制基部104(圖2A),這改進了結合材料的結合性質並提高了結合材料的厚度的均勻性。最終的結合層106經由固化製程形成。結合層106可以具有在約100微米至800微米的範圍內的厚度,但是在需要時亦可更厚或更薄以實現介電主體102與溫度控制基部104之間的期望的材料性質、結合強度和傳熱性質。雖然在圖2A-2B中使用了結合材料片,但將理解,可以使用能夠形成結合層的任何方法,諸如在相應的介電主體102和溫度控制基部104的表面上澆鑄、施加糊劑、噴塗或模制結合材料。另外,可以使用不同數量的層來形成結合層106。
流孔112延伸穿過基板支撐件100。為了便於描述,圖2A-2B中圖示了一個流孔,但將理解,可利用多個孔。流孔112穿過介電主體102、結合層106和溫度控制基部104形成。流孔112的設置在溫度控制基部104內的部分包括兩個部分。第一部分從面向介電主體102的表面210朝向溫度控制基部104的主體的中心向內延伸。部分地延伸穿過溫度控制基部104的第一部分是形成柱形凹槽212的沉孔。第二部分從凹槽212延伸穿過溫度控制基部104的其餘部分,並且具有圓形的橫截面。第一部分和第二部分各自具有直徑,其中第二部分的直徑小於第一部分的直徑,如圖2A-2B所示。結合層106設置成與溫度控制基部104的表面210相鄰。開口穿過結合層106a、106b中的每一個而形成,並且開口與凹槽212的中心對準,從而形成穿過每個結合層106a、106b的孔。結合層106b的開口214具有等於或大於凹槽212的直徑的直徑。結合層106a的開口216具有小於開口214的直徑。在某些實施方式中,開口216可以具有與凹槽212的直徑實質上相等的直徑。當結合層106a、106b如圖2B所示那樣組合時,穿過結合層106的開口214、216創建「階梯狀的結合」。
一系列的輪葉218形成在介電主體102內,並且它們經配置以與凹槽212和開口214、216對準以部分地限定流孔112。圖2A-2B中圖示了兩個輪葉,該兩個輪葉結合相鄰的介電主體102側壁限定三個通路,但是本文中的實施方式可用任何適用數量的輪葉來實踐。插塞220任選地設置在介電主體102內,與流孔112對準。插塞220由多孔材料形成,多孔材料諸如陶瓷,可以是氧化鋁或氧化鋯。插塞220具有一定的孔隙率,諸如在10%和80%之間的孔隙率範圍,這允許氣體從凹槽212通過開口214、216到達輪葉218之間的通路並且與支撐在介電主體102上時的基板W和介電主體102之間的區域流體連通。插塞220進一步防止顆粒、離子化顆粒或離子化氣體在基板W不在介電主體102上時從處理區域通過輪葉218之間的通路並進入由開口214、216限定的氣體容積區域中。
圖2A-2B中所示的階梯狀的結合因形成兩個部分層且然後形成完整的結合層而有利地提高了結合層的均勻性。藉由提高結合材料的均勻性,結合材料對因暴露於製程氣體而造成的劣化的抵抗力增加。另外,橫跨介電主體與溫度控制基部之間的結合層,粘附是一致的,這防止了因溫度控制基部和介電主體中的一者或兩者的熱膨脹導致的應力而造成的局部分層。
圖3圖示了類似圖1和圖2A-2B那樣的基板支撐件100的示意性橫截面。圖3的基板支撐件100含有與圖1-2B相同的部件,這些部件共用相同的附圖標記,並且為了簡潔而將不再進行討論。結合層306設置在介電主體102與溫度控制基部104之間,從而將介電主體102和溫度控制基部104固定在一起。在圖3的實施方式中,使用單個結合材料片。然而,應理解,存在施加結合材料的其他方法,例如澆鑄、施加糊劑、噴塗或模制、或使用多層片材。結合層306包括有機材料,諸如矽樹脂、丙烯酸、全氟聚合物或它們的組合,但亦已構想能夠形成結合的其他材料。在某些實施方式中,結合層306另外地包括無機材料(例如氧化鋁、氮化鋁或碳化矽)以改進結合層306的特定性質,諸如熱導性。環形開口302穿過結合層306形成,並且經配置以與柱形凹槽212和輪葉218對準,柱形凹槽212和輪葉218結合環形開口302部分地限定流孔112。同樣,圖3中圖示了單個流孔112,但是亦可利用任何適用數量的孔。開口302的直徑小於柱形凹槽212的直徑,使得藉由將結合層306的邊緣施加在凹槽212上來形成肩部。肩部和開口302用作通向任選地設置在其中的輪葉218或插塞220的氣流的扼流件。開口302亦具有小於插塞220的直徑的直徑,使得結合層306在插塞220下方延伸,如圖3所示。在此,插塞220同樣用於防止顆粒、材料的離子化顆粒或來自製程環境的離子化氣體在基板W不存在於介電主體102上時到達結合材料。藉由在凹槽212上延伸結合層306,溫度控制基部104的暴露於腐蝕性製程氣體的表面區域減小,這顯著減少了對金屬溫度控制基部104的腐蝕。
圖4圖示了類似於圖1-3那樣的基板支撐件100,並且相同的部件共用相同的附圖標記。為了簡潔,在此將再次略去對相同的部件的描述。結合層406設置在介電主體102與溫度控制基部104之間並將它們固定在一起。單個流孔112被示出為設置在基板支撐件100中,但是亦可利用任何適用數量。環形開口414穿過結合層406形成以部分地限定流孔112。開口414具有實質上大於柱形凹槽212的直徑。密封件404(諸如O形環)任選地設置在開口414的擴大的直徑中。密封件404用於密封結合層406以使其與在流孔112內流動的氣體隔離。密封件404包括能夠禁得起因氣體化學物質造成的劣化的材料。在某些實施方式中,密封件404包括聚合物,諸如全氟聚合物(例如,Viton®或XPE)、聚四氟乙烯(PTFE)或矽樹脂。還構想了其他材料,諸如另外的石油基聚合物。可以利用適於與在流孔112中流動的製程氣體接觸的任何材料。
類似於圖2-3的插塞220的插塞420任選地設置在介電主體102中,與輪葉218相鄰。插塞420和輪葉218可以以單件提供。插塞420包括多孔材料,諸如陶瓷,其中孔隙率可以具有一定範圍,諸如10%至80%的孔隙率,以允許氣流通過插塞420通向由輪葉218結合相鄰的介電主體102側壁限定的通路。插塞420就像插塞220那樣亦用於防止材料的離子化顆粒或來自製程環境的離子化氣體在基板W不存在於介電主體102上時到達結合材料。插塞420經配置以接收環408。環408設置成與密封件404相鄰並與密封件404和插塞420兩者接觸。環408可以包括金屬或陶瓷材料。環408為密封件404提供了改進的密封表面。密封件404接觸環408以創建第一密封點。在環408對面,密封件404接觸溫度控制基部104以創建第二密封點。第一密封點和第二密封點防止氣體繞過密封件404並將結合層406與流孔112內的氣體隔離。本文中的實施方式提供了改進的密封以保護結合層406免受製程氣體影響,由此增加了結合材料的壽命和耐久性。
在某些實施方式中,結合層406的結合材料可經選擇以改進一種或多種期望的性質,諸如傳熱或高溫粘附。具有期望性質的一些材料可反過來具有對因暴露於流孔112內的製程氣體而導致的劣化的較小的抵抗力。藉由利用如圖4所示的密封件404和環408,可選擇抵抗力較小的材料來用於結合材料,因為密封件404將結合層406與製程氣體隔離。第二密封件(未圖示)可以設置在結合層406的外周邊處,由此,與密封件404、介電主體102和溫度控制基部104結合來封裝結合層406。因此,基板支撐件100可以具有帶有期望特性的結合層,而不降低結合層的壽命和耐久性。
將理解,本文揭示的實施方式並不限於靜電夾頭。實施方式可用其中利用結合層的任何結構進行實踐。將進一步理解,本文揭示的示例性幾何形狀並不限制實施方式的範圍。已構想了流孔和主體的其他幾何形狀。
雖然前述內容針對本案的實施方式,但是亦可在不脫離本案的基本範圍的情況下設計本案的其他和進一步實施方式,並且本案的範圍由隨附申請專利範圍確定。
100‧‧‧基板支撐件
102‧‧‧介電主體
104‧‧‧溫度控制基部
106‧‧‧結合層
106a‧‧‧結合層
106b‧‧‧結合層
108‧‧‧電極
110‧‧‧通道
112‧‧‧流孔
208‧‧‧表面
210‧‧‧表面
212‧‧‧凹槽
212‧‧‧凹槽
214‧‧‧開口
216‧‧‧開口
218‧‧‧輪葉
220‧‧‧插塞
302‧‧‧開口
306‧‧‧結合層
404‧‧‧密封件
406‧‧‧結合層
408‧‧‧環
414‧‧‧開口
420‧‧‧插塞
為了可詳細地理解本案的上述特徵結構所用方式,上文簡要地概述的本案的更特定的描述可以參考實施方式進行,實施方式中的一些圖示在隨附附圖中。然而,將注意,隨附附圖僅圖示了示例性的實施方式,並且因此不應視為限制本案的範圍,因為本案可允許其他等效實施方式。
圖1是示例性基板支撐件的橫截面示意圖。
圖2A-2B是根據一個實施方式的將靜電夾頭和溫度控制構件固定在一起的結合結構的橫截面示意圖。
圖3是根據一個實施方式的將靜電夾頭和溫度控制構件固定在一起的結合結構的橫截面示意圖。
圖4是根據一個實施方式的將靜電夾頭和溫度控制構件固定在一起的結合結構的橫截面示意圖。
為了促進理解,已盡可能使用相同的元件符號標示各圖共有的相同要素。將構想,一個實施方式的要素和特徵可有益地併入其他實施方式,而無需關於其他實施方式來進行贅述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
Claims (20)
- 一種結合層結構,包括: 一第一主體,具有從其中穿過的一流孔; 一第二主體,具有從其中穿過的一流孔;和 一結合層,設置在該第一主體與該第二主體之間,該結合層包括: 第一結合層,具有延伸穿過該第一結合層的第一開口;和 第二結合層,具有延伸穿過該第二結合層的第二開口,其中該第二開口具有大於該第一開口的直徑的直徑。
- 如請求項1所述之結合層結構,其中該第一層和該第二層包括一結合材料片。
- 如請求項1所述之結合層結構,其中該結合層包括一有機材料。
- 如請求項3所述之結合層結構,其中該有機材料包括矽樹脂、丙烯酸或全氟聚合物。
- 如請求項1所述之結合層結構,其進一步包括一多孔插塞,該多孔插塞設置成與該結合層相鄰。
- 如請求項1所述之結合層結構,其中穿過該第一主體的流孔的、穿過該第二主體的流孔的、穿過該第一結合層的開口的和穿過該第二結合層的開口的中心沿著從其中延伸穿過的一軸線對準。
- 一種結合層結構,包括: 一第一主體,具有從其中穿過的一第一孔; 一第二主體,具有從其中穿過的一第二孔; 一結合層,設置在該第一主體與該第二主體之間;及 一開口,穿過該結合材料層形成,其中該開口具有比穿過該第一主體的孔的一寬度和穿過該第二主體的孔的一寬度兩者小的一直徑。
- 如請求項7所述之結合層結構,其中該結合層包括一結合材料片。
- 如請求項7所述之結合層結構,其中該結合層包括一有機材料。
- 如請求項9所述之結合層結構,其中該有機材料包括矽樹脂、丙烯酸或全氟聚合物。
- 如請求項7所述之結合層結構,其進一步包括一多孔插塞,該多孔插塞設置成與該結合層相鄰。
- 如請求項7所述之結合層結構,其中穿過該第一主體的孔的、穿過該第二主體的孔的和穿過該結合層的該開口的中心沿著從其中延伸穿過的一軸線對準。
- 如請求項11所述之結合層結構,其中該插塞具有比穿過該結合層的該開口的該直徑大的一寬度。
- 一種結合層結構,包括: 一第一主體,具有從其中穿過的一孔; 一第二主體,具有從其中穿過的一孔; 一結合層,設置在該第一主體與該第二主體之間; 一開口,穿過該結合材料層形成,其中該開口具有實質上大於穿過該第二主體的孔的一寬度的一直徑; 一插塞,設置成與該孔相鄰; 一密封件,設置在該結合層的該開口內;和 一環,設置在該插塞與該密封件之間,其中該環的一表面限定用於該密封件的一密封表面。
- 如請求項14所述之結合層結構,其中該第一主體的孔的、該第二主體的孔的和穿過該結合層的該開口的中心沿著從其中延伸穿過的一軸線對準。
- 如請求項14所述之結合層結構,其中該結合層包括一結合材料片。
- 如請求項14所述之結合層結構,其中該結合層包括一有機材料。
- 如請求項17所述之結合層結構,其中該有機材料包括矽樹脂、丙烯酸或全氟聚合物。
- 如請求項14所述之結合層結構,該開口具有小於該插塞的一寬度的一直徑。
- 如請求項14所述之結合層結構,其中該密封件包括一O形環。
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JP7291046B2 (ja) * | 2019-09-18 | 2023-06-14 | 新光電気工業株式会社 | 基板固定装置 |
JP7319158B2 (ja) * | 2019-09-30 | 2023-08-01 | 日本特殊陶業株式会社 | 保持装置 |
CN112908919A (zh) * | 2019-12-04 | 2021-06-04 | 中微半导体设备(上海)股份有限公司 | 静电吸盘装置及包括该静电吸盘装置的等离子体处理装置 |
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TWI789585B (zh) * | 2019-05-24 | 2023-01-11 | 美商應用材料股份有限公司 | 具有改良的接合層保護之基板支撐載體 |
US11651987B2 (en) | 2019-05-24 | 2023-05-16 | Applied Materials, Inc. | Substrate support carrier with improved bond layer protection |
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US11192323B2 (en) | 2021-12-07 |
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CN109599356A (zh) | 2019-04-09 |
TWI786194B (zh) | 2022-12-11 |
TWI806799B (zh) | 2023-06-21 |
US10688750B2 (en) | 2020-06-23 |
US20220063236A1 (en) | 2022-03-03 |
KR20190039389A (ko) | 2019-04-11 |
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