CN204374466U

CN204374466U - The logical infrared filtering sensitive element of 4270nm band

Info

Publication number: CN204374466U
Application number: CN201420757540.XU
Authority: CN
Inventors: 王继平; 余初旺; 吕晶
Original assignee: MULTI IR OPTOELECTRONICS CO Ltd
Current assignee: MULTI IR OPTOELECTRONICS CO Ltd
Priority date: 2014-12-07
Filing date: 2014-12-07
Publication date: 2015-06-03
Anticipated expiration: 2024-12-07

Abstract

The utility model discloses a kind of 4270nm and be with logical infrared filtering sensitive element, comprising with Si is raw-material substrate, be the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer with Ge, SiO for the first filming layer with Ge, SiO.The logical infrared filtering sensitive element of a kind of 4270nm band that the utility model obtains, its centre wavelength 4270 ± 40nm, it, in medical infrared gas detection analytic process, can improve signal to noise ratio (S/N ratio) greatly, improve accurate testing degree, be suitable for promoting on a large scale and using.Peak transmittance Tp >=70% of this optical filtering sensitive element, bandwidth=128 ± 20nm, 400 ~ 5500nm(is except passband), Tavg<0.1%.

Description

The logical infrared filtering sensitive element of 4270nm band

Technical field

The utility model relates to medical infrared gas detection optical filtering sensitive element, the logical infrared filtering sensitive element of especially a kind of 4270nm band.

Background technology

Infrared filtering sensitive element filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object easily, and namely infrared ray can not reflect through object.Utilize this characteristic ultrared, only allow the infrared ray of long wavelength pass through, the ultraviolet of filtering short wavelength and visible ray.Be applied to a lot of field, at present the signal to noise ratio (S/N ratio) of rate and cut-off region be through for the optical filtering sensitive element Problems existing used in medical infrared gas detection process not high, high-precision measurement requirement can not be met.

Utility model content

The purpose of this utility model is deficiency in order to solve above-mentioned technology and provides the logical infrared filtering sensitive element of 4270nm band that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio).

In order to achieve the above object, the logical infrared filtering sensitive element of a kind of 4270nm band designed by the utility model, comprising with Si is raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 162nm thickness from inside to outside, the SiO layer of 220nm thickness, the Ge layer of 88nm thickness, the SiO layer of 312nm thickness, the Ge layer of 70nm thickness, the SiO layer of 198nm thickness, the Ge layer of 270nm thickness, the SiO layer of 313nm thickness, the Ge layer of 114nm thickness, the SiO layer of 330nm thickness, the Ge layer of 133nm thickness, the SiO layer of 140nm thickness, the Ge layer of 93nm thickness, the SiO layer of 397nm thickness, the Ge layer of 176nm thickness, the SiO layer of 272nm thickness, the Ge layer of 144nm thickness, the SiO layer of 552nm thickness, the Ge layer of 201nm thickness, the SiO layer of 272nm thickness, the Ge layer of 123nm thickness, the SiO layer of 419nm thickness, the Ge layer of 281nm thickness, the SiO layer of 233nm thickness, the Ge layer of 59nm thickness, the SiO layer of 395nm thickness, the Ge layer of 456nm thickness, the SiO layer of 594nm thickness, the Ge layer of 434nm thickness, the SiO layer of 376nm thickness, the second described film plating layer is arranged in order the Ge layer, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 1206nm thickness, the Ge layer of 261nm thickness, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 3620nm thickness, the Ge layer of 249nm thickness, the SiO layer of 150nm thickness that include 261nm thickness from inside to outside.

The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.

The logical infrared filtering sensitive element of a kind of 4270nm band that the utility model obtains, its centre wavelength 4270 ± 40nm, it, in medical infrared gas detection analytic process, can improve signal to noise ratio (S/N ratio) greatly, improve accurate testing degree, be suitable for promoting on a large scale and using.Peak transmittance Tp >=70% of this optical filtering sensitive element, bandwidth=128 ± 20nm, 400 ~ 5500nm(is except passband), Tavg<0.1%.

Accompanying drawing explanation

Fig. 1 is embodiment one-piece construction schematic diagram.

Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.

In figure: the first filming layer 1, substrate 2, second film plating layer 3.

Embodiment

Below by embodiment, the utility model will be further described by reference to the accompanying drawings.

Embodiment 1.

As Fig. 1, shown in Fig. 2, the logical infrared filtering sensitive element of a kind of 4270nm band that the present embodiment describes, comprising with Si is raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 162nm thickness from inside to outside, the SiO layer of 220nm thickness, the Ge layer of 88nm thickness, the SiO layer of 312nm thickness, the Ge layer of 70nm thickness, the SiO layer of 198nm thickness, the Ge layer of 270nm thickness, the SiO layer of 313nm thickness, the Ge layer of 114nm thickness, the SiO layer of 330nm thickness, the Ge layer of 133nm thickness, the SiO layer of 140nm thickness, the Ge layer of 93nm thickness, the SiO layer of 397nm thickness, the Ge layer of 176nm thickness, the SiO layer of 272nm thickness, the Ge layer of 144nm thickness, the SiO layer of 552nm thickness, the Ge layer of 201nm thickness, the SiO layer of 272nm thickness, the Ge layer of 123nm thickness, the SiO layer of 419nm thickness, the Ge layer of 281nm thickness, the SiO layer of 233nm thickness, the Ge layer of 59nm thickness, the SiO layer of 395nm thickness, the Ge layer of 456nm thickness, the SiO layer of 594nm thickness, the Ge layer of 434nm thickness, the SiO layer of 376nm thickness, the second described film plating layer 3 is arranged in order the Ge layer, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 1206nm thickness, the Ge layer of 261nm thickness, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 3620nm thickness, the Ge layer of 249nm thickness, the SiO layer of 150nm thickness that include 261nm thickness from inside to outside.

Claims

1. the logical infrared filtering sensitive element of 4270nm band, comprising with Si is raw-material substrate (2), with Ge, SiO is the first filming layer (1) and with Ge, SiO is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 162nm thickness from inside to outside, the SiO layer of 220nm thickness, the Ge layer of 88nm thickness, the SiO layer of 312nm thickness, the Ge layer of 70nm thickness, the SiO layer of 198nm thickness, the Ge layer of 270nm thickness, the SiO layer of 313nm thickness, the Ge layer of 114nm thickness, the SiO layer of 330nm thickness, the Ge layer of 133nm thickness, the SiO layer of 140nm thickness, the Ge layer of 93nm thickness, the SiO layer of 397nm thickness, the Ge layer of 176nm thickness, the SiO layer of 272nm thickness, the Ge layer of 144nm thickness, the SiO layer of 552nm thickness, the Ge layer of 201nm thickness, the SiO layer of 272nm thickness, the Ge layer of 123nm thickness, the SiO layer of 419nm thickness, the Ge layer of 281nm thickness, the SiO layer of 233nm thickness, the Ge layer of 59nm thickness, the SiO layer of 395nm thickness, the Ge layer of 456nm thickness, the SiO layer of 594nm thickness, the Ge layer of 434nm thickness, the SiO layer of 376nm thickness, described the second film plating layer (3) is arranged in order the Ge layer, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 1206nm thickness, the Ge layer of 261nm thickness, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 603nm thickness, the Ge layer of 261nm thickness, the SiO layer of 3620nm thickness, the Ge layer of 249nm thickness, the SiO layer of 150nm thickness that include 261nm thickness from inside to outside.