CN203551823U - Aviation exhaust gas detection optical filter with 4800nm center wavelength - Google Patents
Aviation exhaust gas detection optical filter with 4800nm center wavelength Download PDFInfo
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- CN203551823U CN203551823U CN201320777852.2U CN201320777852U CN203551823U CN 203551823 U CN203551823 U CN 203551823U CN 201320777852 U CN201320777852 U CN 201320777852U CN 203551823 U CN203551823 U CN 203551823U
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- 230000003287 optical effect Effects 0.000 title claims abstract description 16
- 238000001514 detection method Methods 0.000 title abstract 9
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000011247 coating layer Substances 0.000 abstract 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N germanium monoxide Inorganic materials [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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Abstract
The utility model relates to a designed aviation exhaust gas detection optical filter with a 4800nm center wavelength. The aviation exhaust gas detection optical filter with the 4800nm center wavelength has high detection precision and can greatly improve a signal-to-noise ration. The aviation exhaust gas detection optical filter comprises a base board taking germanium as a raw material, the first coating layer taking germanium and silicon monoxide as raw materials and the second coating layer taking silicon and silicon monoxide as raw materials, wherein the base board is arranged between the first coating layer and the second coating layer. The center wavelength of the aviation exhaust gas detection optical filter is 4800+/-50nm, in an aviation exhaust gas detection process, the signal-to-noise ratio can be greatly improved, and detection accuracy is improved. According to the aviation exhaust gas detection optical filter, a peak value transmittance Tp is greater than or equal to 80%, the bandwidth is 300+/-20nm; in a range of 400-7000nm, except the bandwidth, Tavg is smaller than 0.5%.
Description
Technical field
The utility model relates to aviation tail gas gas and detects optical filter, and the aviation tail gas gas of especially a kind of centre wavelength 4800nm detects optical filter.
Background technology
Infrared fileter filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object at an easy rate, and namely infrared ray can not reflect when through object.Utilize ultrared this characteristic, only allow long wavelength's infrared ray pass through, filtering short wavelength's ultraviolet ray and visible ray.Be applied to a lot of fields, the problem existing for the optical filter using in aviation tail gas gas testing process is at present that the signal to noise ratio (S/N ratio) of transmitance and cut-off region is not high, can not meet high-precision measurement requirement.
Utility model content
The purpose of this utility model is in order to solve the deficiency of above-mentioned technology, to provide that a kind of measuring accuracy is high, the aviation tail gas gas of the centre wavelength 4800nm that can greatly improve signal to noise ratio (S/N ratio) detects optical filter.
In order to achieve the above object, the aviation tail gas gas of the centre wavelength 4800nm that the utility model is designed detects optical filter, comprises and take Ge as raw-material substrate, with Ge, SiO is the first filming layer and with Si, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, and described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 260nm thickness, the Ge layer of 104nm thickness, the SiO layer of 394nm thickness, the Ge layer of 114nm thickness, the SiO layer of 20nm thickness, the Ge layer of 189nm thickness, the SiO layer of 381nm thickness, the Ge layer of 85nm thickness, the SiO layer of 338nm thickness, the Ge layer of 144nm thickness, the SiO layer of 196nm thickness, the Ge layer of 187nm thickness, the SiO layer of 583nm thickness, the Ge layer of 136nm thickness, the SiO layer of 241nm thickness, the Ge layer of 253nm thickness, the SiO layer of 677nm thickness, the Ge layer of 151nm thickness, the SiO layer of 219nm thickness, the Ge layer of 217nm thickness, the SiO layer of 689nm thickness, the Ge layer of 259nm thickness, the SiO layer of 197nm thickness, the Ge layer of 119nm thickness and the SiO layer of 120nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Si layer of 350nm thickness, the SiO layer of 2769nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 2769nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 1385nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 399nm thickness and the SiO layer of 660nm thickness.
Thickness corresponding to above-mentioned each material, its permission changes in margin tolerance, and the scope of its variation belongs to the scope of this patent protection, is identity relation.Conventionally the tolerance of thickness is in 10nm left and right.
The aviation tail gas gas of the resulting centre wavelength 4800nm of the utility model detects optical filter, its centre wavelength 4800 ± 50nm, and it,, in aviation tail gas gas testing process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree.Peak transmittance Tp >=80% of this optical filter, bandwidth=300 ± 20nm, 400～7000nm(is except passband), Tavg<0.5%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram;
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
Embodiment 1:
As Fig. 1, shown in Fig. 2, the aviation tail gas gas of the centre wavelength 4800nm that the present embodiment is described detects optical filter, comprises and take Ge as raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Si, SiO is the second film plating layer 3, and described substrate 2 is between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 260nm thickness, the Ge layer of 104nm thickness, the SiO layer of 394nm thickness, the Ge layer of 114nm thickness, the SiO layer of 20nm thickness, the Ge layer of 189nm thickness, the SiO layer of 381nm thickness, the Ge layer of 85nm thickness, the SiO layer of 338nm thickness, the Ge layer of 144nm thickness, the SiO layer of 196nm thickness, the Ge layer of 187nm thickness, the SiO layer of 583nm thickness, the Ge layer of 136nm thickness, the SiO layer of 241nm thickness, the Ge layer of 253nm thickness, the SiO layer of 677nm thickness, the Ge layer of 151nm thickness, the SiO layer of 219nm thickness, the Ge layer of 217nm thickness, the SiO layer of 689nm thickness, the Ge layer of 259nm thickness, the SiO layer of 197nm thickness, the Ge layer of 119nm thickness and the SiO layer of 120nm thickness, described the second film plating layer 3 is arranged in order and includes from inside to outside: the Si layer of 350nm thickness, the SiO layer of 2769nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 2769nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 1385nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 399nm thickness and the SiO layer of 660nm thickness.
Claims (1)
1. the aviation tail gas gas of centre wavelength 4800nm detects an optical filter, comprises and take Ge as raw-material substrate, with Ge, SiO is the first filming layer and with Si, SiO is the second film plating layer, and described substrate is between the first filming layer and the second film plating layer, it is characterized in that: described the first filming layer is arranged in order and includes from inside to outside: the Ge layer of 178nm thickness, the SiO layer of 260nm thickness, the Ge layer of 104nm thickness, the SiO layer of 394nm thickness, the Ge layer of 114nm thickness, the SiO layer of 20nm thickness, the Ge layer of 189nm thickness, the SiO layer of 381nm thickness, the Ge layer of 85nm thickness, the SiO layer of 338nm thickness, the Ge layer of 144nm thickness, the SiO layer of 196nm thickness, the Ge layer of 187nm thickness, the SiO layer of 583nm thickness, the Ge layer of 136nm thickness, the SiO layer of 241nm thickness, the Ge layer of 253nm thickness, the SiO layer of 677nm thickness, the Ge layer of 151nm thickness, the SiO layer of 219nm thickness, the Ge layer of 217nm thickness, the SiO layer of 689nm thickness, the Ge layer of 259nm thickness, the SiO layer of 197nm thickness, the Ge layer of 119nm thickness and the SiO layer of 120nm thickness, described the second film plating layer is arranged in order and includes from inside to outside: the Si layer of 350nm thickness, the SiO layer of 2769nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 2769nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 350nm thickness, the SiO layer of 1385nm thickness, the Si layer of 350nm thickness, the SiO layer of 692nm thickness, the Si layer of 399nm thickness and the SiO layer of 660nm thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320777852.2U CN203551823U (en) | 2013-11-29 | 2013-11-29 | Aviation exhaust gas detection optical filter with 4800nm center wavelength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320777852.2U CN203551823U (en) | 2013-11-29 | 2013-11-29 | Aviation exhaust gas detection optical filter with 4800nm center wavelength |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203551823U true CN203551823U (en) | 2014-04-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320777852.2U Expired - Lifetime CN203551823U (en) | 2013-11-29 | 2013-11-29 | Aviation exhaust gas detection optical filter with 4800nm center wavelength |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203551823U (en) |
-
2013
- 2013-11-29 CN CN201320777852.2U patent/CN203551823U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee after: HANGZHOU MULTI IR TECHNOLOGY CO.,LTD. Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Patentee before: MULTI IR OPTOELECTRONICS Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140416 |