CN104597549A - 4600 nm band-pass infrared filtering sensitive element - Google Patents
4600 nm band-pass infrared filtering sensitive element Download PDFInfo
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- CN104597549A CN104597549A CN201410734957.9A CN201410734957A CN104597549A CN 104597549 A CN104597549 A CN 104597549A CN 201410734957 A CN201410734957 A CN 201410734957A CN 104597549 A CN104597549 A CN 104597549A
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- 238000001914 filtration Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 4
- 238000009501 film coating Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
Abstract
The invention discloses a 4600 nm band-pass infrared filtering sensitive element. The 4600 nm band-pass infrared filtering sensitive element comprises a substrate taking Si as raw material, a first film coating layer made of Ge and SiO and a second film coating layer made of Ge and SiO; the substrate is arranged between the first film coating layer and the second film coating layer. The central wavelength of the 4600 nm band-pass infrared filtering sensitive element obtained by the invention is 4600+/-40 nm; during the medical infrared gas detection analysis process, the 4700 nm band-pass infrared filtering sensitive element can greatly improve the signal-to-noise ratio and increase testing accuracy, and is applicable to popularize and use on a large scale. Tp of peak transmittance of the filtering sensitive element is not less than 70%, the band width is equal to 138+/-20 nm, 400-5500 nm (except for passing band), and Tavg is less than 0.1%.
Description
Technical field
The present invention relates to medical infrared gas detection optical filtering sensitive element, the logical infrared filtering sensitive element of especially a kind of 4600nm band.
Background technology
Infrared filtering sensitive element filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object easily, and namely infrared ray can not reflect through object.Utilize this characteristic ultrared, only allow the infrared ray of long wavelength pass through, the ultraviolet of filtering short wavelength and visible ray.Be applied to a lot of field, at present the signal to noise ratio (S/N ratio) of rate and cut-off region be through for the optical filtering sensitive element Problems existing used in medical infrared gas detection process not high, high-precision measurement requirement can not be met.
Summary of the invention
The object of the invention is the deficiency in order to solve above-mentioned technology and the logical infrared filtering sensitive element of 4600nm band that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio) is provided.
In order to achieve the above object, the logical infrared filtering sensitive element of a kind of 4600nm band designed by the present invention, comprising with Si is raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 120nm thickness from inside to outside, the SiO layer of 257nm thickness, the Ge layer of 110nm thickness, the SiO layer of 267nm thickness, the Ge layer of 112nm thickness, the SiO layer of 278nm thickness, the Ge layer of 161nm thickness, the SiO layer of 282nm thickness, the Ge layer of 110nm thickness, the SiO layer of 239nm thickness, the Ge layer of 201nm thickness, the SiO layer of 294nm thickness, the Ge layer of 233nm thickness, the SiO layer of 287nm thickness, the Ge layer of 240nm thickness, the SiO layer of 393nm thickness, the Ge layer of 257nm thickness, the SiO layer of 201nm thickness, the Ge layer of 270nm thickness, the SiO layer of 303nm thickness, the Ge layer of 325nm thickness, the SiO layer of 284nm thickness, the Ge layer of 71nm thickness, the SiO layer of 180nm thickness, the second described film plating layer is arranged in order the Ge layer, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 1308nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 566nm thickness, the SiO layer of 602nm thickness, the Ge layer of 259nm thickness, the SiO layer of 150nm thickness that include 283nm thickness from inside to outside.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
The logical infrared filtering sensitive element of a kind of 4600nm band that the present invention obtains, its centre wavelength 4600 ± 40nm, it, in medical infrared gas detection analytic process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.Peak transmittance Tp >=70% of this optical filtering sensitive element, bandwidth=138 ± 20nm, 400 ~ 5500nm(is except passband), Tavg<0.1%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate 2, second film plating layer 3.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1.
As depicted in figs. 1 and 2, the logical infrared filtering sensitive element of a kind of 4600nm band that the present embodiment describes, comprising with Si is raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 120nm thickness from inside to outside, the SiO layer of 257nm thickness, the Ge layer of 110nm thickness, the SiO layer of 267nm thickness, the Ge layer of 112nm thickness, the SiO layer of 278nm thickness, the Ge layer of 161nm thickness, the SiO layer of 282nm thickness, the Ge layer of 110nm thickness, the SiO layer of 239nm thickness, the Ge layer of 201nm thickness, the SiO layer of 294nm thickness, the Ge layer of 233nm thickness, the SiO layer of 287nm thickness, the Ge layer of 240nm thickness, the SiO layer of 393nm thickness, the Ge layer of 257nm thickness, the SiO layer of 201nm thickness, the Ge layer of 270nm thickness, the SiO layer of 303nm thickness, the Ge layer of 325nm thickness, the SiO layer of 284nm thickness, the Ge layer of 71nm thickness, the SiO layer of 180nm thickness, the second described film plating layer 3 is arranged in order the Ge layer, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 1308nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 566nm thickness, the SiO layer of 602nm thickness, the Ge layer of 259nm thickness, the SiO layer of 150nm thickness that include 283nm thickness from inside to outside.
Claims (1)
1. the logical infrared filtering sensitive element of 4600nm band, comprising with Si is raw-material substrate (2), with Ge, SiO is the first filming layer (1) and with Ge, SiO is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 120nm thickness from inside to outside, the SiO layer of 257nm thickness, the Ge layer of 110nm thickness, the SiO layer of 267nm thickness, the Ge layer of 112nm thickness, the SiO layer of 278nm thickness, the Ge layer of 161nm thickness, the SiO layer of 282nm thickness, the Ge layer of 110nm thickness, the SiO layer of 239nm thickness, the Ge layer of 201nm thickness, the SiO layer of 294nm thickness, the Ge layer of 233nm thickness, the SiO layer of 287nm thickness, the Ge layer of 240nm thickness, the SiO layer of 393nm thickness, the Ge layer of 257nm thickness, the SiO layer of 201nm thickness, the Ge layer of 270nm thickness, the SiO layer of 303nm thickness, the Ge layer of 325nm thickness, the SiO layer of 284nm thickness, the Ge layer of 71nm thickness, the SiO layer of 180nm thickness, described the second film plating layer (3) is arranged in order the Ge layer, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 1308nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 283nm thickness, the SiO layer of 654nm thickness, the Ge layer of 566nm thickness, the SiO layer of 602nm thickness, the Ge layer of 259nm thickness, the SiO layer of 150nm thickness that include 283nm thickness from inside to outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410734957.9A CN104597549B (en) | 2014-12-07 | 2014-12-07 | 4600 nm band-pass infrared filtering sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410734957.9A CN104597549B (en) | 2014-12-07 | 2014-12-07 | 4600 nm band-pass infrared filtering sensitive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104597549A true CN104597549A (en) | 2015-05-06 |
| CN104597549B CN104597549B (en) | 2017-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410734957.9A Active CN104597549B (en) | 2014-12-07 | 2014-12-07 | 4600 nm band-pass infrared filtering sensitive element |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105842770A (en) * | 2016-05-17 | 2016-08-10 | 江苏大学 | CO2 gas detection infrared filter and preparation method thereof |
| CN111323862A (en) * | 2020-03-11 | 2020-06-23 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for sunlight interference resistance flame detection and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202305861U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 3,000-5,000nm band-pass infrared filter |
| CN202472019U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 5,300-nano band pass infrared optical filter |
| CN203551828U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Astronomical optical filter with 3600-4000 nm pass band for observing graphic spectrums |
| CN204374467U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | The logical infrared filtering sensitive element of 4600nm band |
-
2014
- 2014-12-07 CN CN201410734957.9A patent/CN104597549B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202305861U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 3,000-5,000nm band-pass infrared filter |
| CN202472019U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 5,300-nano band pass infrared optical filter |
| CN203551828U (en) * | 2013-11-29 | 2014-04-16 | 杭州麦乐克电子科技有限公司 | Astronomical optical filter with 3600-4000 nm pass band for observing graphic spectrums |
| CN204374467U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | The logical infrared filtering sensitive element of 4600nm band |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105842770A (en) * | 2016-05-17 | 2016-08-10 | 江苏大学 | CO2 gas detection infrared filter and preparation method thereof |
| CN105842770B (en) * | 2016-05-17 | 2018-06-01 | 江苏大学 | A kind of CO2Gas detection infrared fileter and preparation method thereof |
| CN111323862A (en) * | 2020-03-11 | 2020-06-23 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for sunlight interference resistance flame detection and preparation method thereof |
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| CN104597549B (en) | 2017-05-03 |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant before: Multi IR Optoelectronics Co., Ltd. |
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