CN111323862A - Infrared filter for sunlight interference resistance flame detection and preparation method thereof - Google Patents
Infrared filter for sunlight interference resistance flame detection and preparation method thereof Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 55
- 239000012528 membrane Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 23
- 238000001704 evaporation Methods 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 18
- 239000007888 film coating Substances 0.000 claims description 17
- 238000009501 film coating Methods 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003595 spectral effect Effects 0.000 abstract description 9
- 238000002834 transmittance Methods 0.000 abstract description 3
- 230000004044 response Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Abstract
The invention relates to an infrared filter for sunlight interference resistant flame detection, which comprises a base material, a main film system structure and a cut-off film system structure, wherein the main film system structure and the cut-off film system structure are respectively arranged on two sides of the base material. The present invention provides three alternative main membrane systems and one alternative stop membrane system. The invention also provides a corresponding preparation method. By adopting the infrared filter for sunlight interference resistant flame detection and the preparation method thereof, the overlapping part of the solar blind spectral region and the flame emission spectral region is creatively utilized for designing the filter, namely, the central wavelength is 4.35 micrometers, the bandwidth is 100 +/-10 nm, and the average transmittance in the range of 1.5-8.0 mu m of the cut-off region except the passband is less than 1 percent; in addition, the idea of the design of the talon-symmetric film system is used for the main film system structure.
Description
Technical Field
The invention relates to the technical field of flame detectors, in particular to an infrared filter for sunlight interference resistance flame detection.
Background
In recent years, with the enhancement of safety awareness of people, the demand for fire protection and alarm devices is increasing. The flame detector is the most effective fire detection and alarm device for large petrochemical industry, inflammable and explosive storage warehouses and other places. In general, whether a fire disaster occurs in an effective range can be effectively judged by detecting radiation signals of 4.3-4.6 mu m wave bands. However, in some human activity places, there are some influences in the aspects of industrial illumination, biological heat source interference, background radiation and the like, so that three-channel, four-channel and even five-channel flame detectors are derived, for example, infrared signal channels of 2.2 μm, 2.7 μm, 3.9 μm and 5.02 μm are added, and misjudgment caused by various interferences is reduced through an algorithm.
However, actual tests show that no detector capable of well recognizing flame signals under sunlight interference exists in the domestic market. The reason is that the response signals of all channels are too high under the interference of sunlight, even the response is cut off, namely, a sunlight blinding phenomenon is generated, namely, whether flames exist in a detection range or not can not be identified.
At present, the national Standard GB 15631-.
For this reason, a special filter against the interference of sunlight is required to normally recognize the flame signal under the interference of sunlight.
The patent ZL201610762639.2 infrared filter for flame detection and a preparation method thereof, and the patent ZL201911074298.X infrared filter for large-view-field flame detection and a preparation method thereof have the design targets of identifying flame signals and expanding flame detection visual angles, and the designed central wavelengths are 4.53 microns and 4.55 microns respectively. As shown in fig. 7, in the presence of solar interference, a response cut-off (the channel signal is invalid) occurs in the signal using a 4.5 micron channel infrared filter. Therefore, the filters designed by the two patents have no capability of resisting sunlight interference, and the phenomenon that sunlight interference signals are too large and even response is cut off easily occurs when the filters are used on a flame detector.
Disclosure of Invention
The invention mainly aims to provide an infrared filter for flame detection with sunlight interference resistance, aiming at the problems that the existing filter for flame detector can not resist sunlight interference, so that the flame detector has overlarge signal under the sunlight interference, even has response cut-off and can not work normally.
In order to achieve the purpose, the technical scheme of the infrared filter for detecting the flame and resisting the sunlight interference is as follows: the infrared filter comprises a substrate material, a main film system structure and a cut-off film system structure, wherein the main film system structure and the cut-off film system structure are respectively arranged on two sides of the substrate material;
the structure of the main membrane system is Sub/HLHLHLH (HLHLHLHLHLHLHLHLH) 2HLH2L/Air, wherein Sub represents a substrate material, Air represents Air, H represents a Ge membrane layer with a quarter-wavelength optical thickness, L represents a ZnS membrane layer with a quarter-wavelength optical thickness, and ^2 represents that a membrane stack in brackets is repeated twice, the design wavelength is 4350nm, and the bandwidth is 90 nm;
or, the main membrane system structure is as follows: Sub/HL 2H LHL 4H LHL2H LHL/Air, wherein, Sub represents a substrate material, Air represents Air, H is a Ge film layer with quarter-wavelength optical thickness, L is an SiO film layer with quarter-wavelength optical thickness, the design wavelength is 4350nm, and the bandwidth is 100 nm;
or, the main membrane system structure is as follows: Sub/HL 6H LH L HL 4H LH L HL 6H LH L/Air, wherein the Sub represents a substrate material, the Air represents Air, H is a Ge film layer with quarter-wavelength optical thickness, L is an SiO film layer with quarter-wavelength optical thickness, the design wavelength is 4350nm, and the bandwidth is 100 nm;
the structure of the cut-off film system is as follows: sub/0.38(0.5HL0.5H) ^ 60.66 (0.5HL0.5H) ^61.50(0.5LH0.5L) ^5/Air, wherein Sub represents a single crystal silicon substrate material, Air represents Air, L is a SiO film layer of a quarter-wavelength optical thickness, H is a Ge film layer of a quarter-wavelength optical thickness, symbols ^6, ^6 and ^5 respectively represent the number of times of the film stack in the corresponding bracket, and the design wavelength is 4350 nm;
the infrared filter has a transmission center wavelength of 4.35 mu m +/-20 nm, a transmission bandwidth of 100 +/-10 nm, all the wave bands of 1.5-8 mu m except the transmission band are cut off, and the average transmission rate of a cut-off region is less than 1%.
Preferably, the substrate material is a monocrystalline silicon substrate material.
The invention also provides a method for preparing the infrared filter for resisting the sunlight interference flame detection, which comprises the following steps:
(1) putting the substrate material into a fixture, placing the fixture in a vacuum chamber of a film coating machine, and vacuumizing;
(2) baking the substrate material;
(3) ion bombarding said substrate material;
(4) coating the main film system structure layer by layer according to the film layer required by the main film system structure, and coating the cut-off film system structure layer by layer according to the film layer required by the cut-off film system structure;
(5) and (5) breaking the hollow part after the plating is finished, and taking the part.
Preferably, the step (1) is specifically:
loading the base material of monocrystalline silicon piece with fineness meeting 40/20 standard into fixture, placing in vacuum chamber of film plating machine, and pumping to 1 × 10 of vacuum degree-3Pa。
Preferably, the step (2) is specifically:
baking the substrate material at 170-190 deg.C, and keeping the constant temperature for more than 20 min.
Preferably, the step (3) is specifically:
and bombarding the substrate material by using Hall ion source ions for 5-15 min, wherein the ion source uses high-purity argon, and the gas flow is 10-20 sccm.
Preferably, the step (4) is specifically:
coating a main film system structure layer by layer according to a film layer required by the main film system structure, evaporating Ge film materials by adopting an electron beam evaporation process, and evaporating ZnS or SiO film materials by adopting a resistance evaporation process, wherein the film coating rate of the Ge film is 0.5-0.7 nm/s, the film coating rate of the ZnS film is 1.4-1.6 nm/s, and the film coating rate of the SiO film is 1.4-1.6 nm/s;
and coating a cut-off film system structure layer by layer according to the film layer required by the cut-off film system structure, evaporating the Ge film material by adopting an electron beam evaporation process, wherein the film coating rate of the Ge film is 0.5-0.7 nm/s, and evaporating the SiO film material by adopting a resistance evaporation process, wherein the film coating rate of the SiO film is 1.4-1.6 nm/s.
Preferably, when the main film system structure and the stop film system structure are plated, the deposition process uses indirect light control and crystal control to control the film thickness and the speed.
Preferably, the step (5) is specifically:
and after the plating is finished, reducing the baking temperature to 40-60 ℃, and breaking and taking out the workpiece.
Preferably, the steps further comprise:
(6) and placing the mixture into an annealing furnace for annealing, wherein the annealing temperature is 180-220 ℃, the constant temperature time is 6-8 hours, and the temperature rising/reducing speed is 1 ℃/min.
By adopting the infrared filter for sunlight interference resistant flame detection and the preparation method thereof, the overlapping part of the solar blind spectral region and the flame emission spectral region is creatively utilized for designing the filter, namely, the central wavelength is 4.35 microns, and the bandwidth is 100 +/-10 nm; in addition, the idea of the design of the talon-symmetric film system is used for the main film system structure.
Drawings
Fig. 1 is a schematic structural diagram of an infrared filter for detecting flames with sunlight interference resistance according to the present invention.
FIG. 2 is a spectral diagram of a filter in which the main membrane structure of the infrared filter provided by the present invention adopts a Sub/HLHLHLH (HLHLHLHLHLHLH) 2HLH2L/Air structure.
FIG. 3 is a spectral diagram of an optical filter in which the main film structure of the infrared optical filter provided by the present invention adopts a Sub/HL 2H LHL 4H LHL2H LHL/Air structure.
FIG. 4 is a spectrum diagram of a filter having a Sub/HL 6H LH L HL 4H LH 6H LH L/Air structure as a main film structure in the infrared filter provided by the present invention.
Fig. 5 is a graph of atmospheric transmittance VS wavelength.
FIG. 6 is a graph of a typical fuel flame emission spectrum.
FIG. 7 is a graph of the signal intensity of a flame under sunlight interference measured using two channels, a 4.53 μm filter and a 4.35 μm filter.
Detailed Description
In order to clearly understand the technical contents of the present invention, the following examples are given in detail.
As shown in fig. 1, in an embodiment of the infrared filter for detecting flame with sunlight interference resistance provided by the present invention, the infrared filter includes a middle substrate, an upper main film structure and a lower cut-off film structure, and the main film structure and the cut-off film structure are respectively disposed on the upper and lower sides of the substrate.
As the base material, it is preferable to use double-side polished single crystal silicon as the base material, and to plate the main film system structure and the cut film system structure on both sides thereof, respectively.
As shown in fig. 5 to 6, the optical filter provided by the present invention creatively combines the overlapping region of the solar spectrum and the flame emission spectrum at the earth surface, and designs and prepares the infrared filter with the central wavelength of 4.35 μm and the passband half-height width (bandwidth for short) of 100 ± 10nm, so that when the optical filter provided by the present invention is used in a flame detector, the optical filter can obviously play a role in resisting the sunlight interference.
As shown in fig. 7, in the presence of sunlight interference, a response cutoff phenomenon (the channel signal is invalid) occurs in the 4.5 micron channel signal, while the 4.35 micron channel signal reacts well, the signal cutoff phenomenon does not occur, and the flame signal can also work normally, and can be successfully identified by combining with the algorithm of the flame detector.
Because the sunlight spectrum at the earth surface has a solar blind area, namely the light of 4.2-4.4 mu m is completely absorbed by the atmosphere, and meanwhile, the emission spectrum of the flame is in a wave band of 4.3-4.6 mu m, the overlapped area of the two in the wave band of 4.3-4.4 mu m can detect the flame and can resist the sunlight interference.
The infrared filter with the central wavelength of 4.35 mu m and the passband half-height width of 100 +/-10 nm comprises a main film system structure and a cut-off film system structure, wherein the main film system structure is used for realizing the narrow band-pass characteristic of a main peak of 4.3-4.4 mu m, but a plurality of mixed peaks appear in a cut-off region; the cut-off film system structure provided by the invention is used for realizing the characteristic of completely cutting off all the mixed peaks in the main film system structure and allowing the main peaks to penetrate.
The invention provides three main membrane system structures capable of realizing the functions:
(1) the structure of the main membrane system is Sub/HLHLHLH (HLHLHLHLHLHLHLHLHLH) 2HLH2L/Air, wherein Sub represents a monocrystalline silicon substrate material, Air represents Air, H represents a Ge membrane layer with a quarter-wavelength optical thickness, L represents a ZnS membrane layer with a quarter-wavelength optical thickness, and ^2 represents that a membrane stack in brackets is repeated twice, the design wavelength is 4350nm, and the bandwidth is 90 nm; alternatively, the first and second electrodes may be,
(2) the main membrane system structure is as follows: Sub/HL 2H LHL 4H LHL2H LHL/Air, wherein, the Sub represents a monocrystalline silicon substrate material, the Air represents Air, H is a Ge film layer with a quarter-wavelength optical thickness, L is an SiO film layer with a quarter-wavelength optical thickness, the design wavelength is 4350nm, and the bandwidth is 100 nm; alternatively, the first and second electrodes may be,
(3) the main membrane system structure is as follows: the substrate is a single crystal silicon substrate material, the Air represents Air, H is a Ge film layer with quarter-wavelength optical thickness, L is an SiO film layer with quarter-wavelength optical thickness, the design wavelength is 4350nm, and the bandwidth is 100 nm.
The third type of main film structure is the same as that of patent ZL201610762639.2 in terms of film structure, but the center wavelength of the main film system of patent ZL201610762639.2 is 4530nm, which is different from 4350nm of the present invention, and as shown in fig. 7, the optical filter disclosed in patent ZL201610762639.2 cannot achieve the anti-solar interference function.
The present invention provides a cut-off film system structure capable of realizing the above functions:
the structure of the cut-off film system is as follows: sub/0.38(0.5HL0.5H) ^ 60.66 (0.5HL0.5H) ^61.50(0.5LH0.5L) ^5/Air, wherein Sub represents single crystal silicon substrate material, Air represents Air, L is a SiO film layer of quarter-wavelength optical thickness, H is a Ge film layer of quarter-wavelength optical thickness, symbols ^6, ^5 respectively represent the number of times that the film stack in the corresponding bracket is repeated, and the design wavelength is 4350 nm.
The cut-off film system structure of the optical filter provided by the invention adopts a mode of combining the long-wave pass film stack and the short-wave pass film stack, and has the advantages of wide cut-off wave band, wide pass-band wave band and low wavelength positioning requirement.
As shown in FIGS. 2 to 4, the infrared filter with the anti-interference effect of sunlight can be obtained by using the main film system structure and the cut-off film system structure provided by the invention, that is, the infrared filter has a transmission center wavelength of 4.35 μm + -20 nm, a transmission bandwidth of 100 + -10 nm, all the wave bands of 1.5 to 8 μm except the transmission band are cut off, and the average transmittance of the cut-off region is less than 1%.
The invention also provides a method for preparing the infrared filter for resisting the sunlight interference flame detection, which comprises the following steps:
(1) loading the monocrystalline silicon wafer substrate material into a fixture, placing the fixture in a vacuum chamber of a coating machine, and vacuumizing;
(2) baking the substrate material;
(3) ion bombarding said substrate material;
(4) coating the main film system structure layer by layer according to the film layer required by the main film system structure, and coating the cut-off film system structure layer by layer according to the film layer required by the cut-off film system structure;
(5) and (5) breaking the hollow part after the plating is finished, and taking the part.
Wherein the step (1) specifically comprises the steps of loading the monocrystalline silicon piece substrate material with the smoothness meeting 40/20 standard into a clamp, placing the clamp into a vacuum chamber of a film coating machine, and pumping the background vacuum degree to 1 × 10-3Pa. 40/20 Standard refers to U.S. military Standard MIL-PRF-13830B, and the finish 40/20 represents a limiting class of surface defects, where 40 represents a mark to limit scratch size and 20 represents a mark to limit pock size.
The step (2) is specifically as follows: baking the substrate material at 170-190 deg.C, and keeping the constant temperature for more than 20 min. Preferably, the base material is baked at 180 ℃ and kept at a constant temperature for more than 30 minutes.
The step (3) is specifically as follows: and bombarding the substrate material by using Hall ion source ions for 5-15 min, wherein the ion source uses high-purity argon, and the gas flow is 10-20 sccm. Preferably, the ion bombardment is performed with a Hall ion source for about 10 minutes, with a gas flow of 15 sccm.
The step (4) is specifically as follows: plating a main film system structure layer by layer according to the film layer thickness required by the main film system structure, evaporating Ge film materials by adopting an electron beam evaporation process, and evaporating ZnS or SiO film materials by adopting a resistance evaporation process, wherein the film plating rate of the Ge film is 0.5-0.7 nm/s, the film plating rate of the ZnS film is 1.4-1.6 nm/s, and the film plating rate of the SiO film is 1.4-1.6 nm/s; preferably, the plating rate of the Ge film is 0.6nm/s, the plating rate of the ZnS film is 1.5nm/s, and the plating rate of the SiO film is 1.5 nm/s. Wherein, in the deposition process, the thickness and the speed of the film are controlled by combining indirect light control and crystal control.
In order to accurately control the central wavelength of the main film system structure when plating the main film system structure, the substrate is preferably placed only one circle along the position with the best film thickness uniformity on the workpiece rack.
After the main film system structure is plated, turning over the substrate plated with the main film system structure, loading the substrate into a clamp, placing the clamp on a workpiece disc as much as possible, plating a stop film system structure layer by layer according to the film thickness required by the stop film system structure, evaporating Ge film materials by adopting an electron beam evaporation process, wherein the film coating rate of the Ge film is 0.5-0.7 nm/s, evaporating SiO film materials by adopting a resistance evaporation process, and the film coating rate of the SiO film is 1.4-1.6 nm/s. Preferably, the film coating rate of the Ge film is 0.6nm/s, the film coating rate of the SiO film is 1.5nm/s, and the thickness and the rate of the film are controlled by combining indirect light control and crystal control in the deposition process.
The step (5) is specifically as follows: and after the plating is finished, reducing the baking temperature to 40-60 ℃, and breaking and taking out the workpiece. Preferably, after the plating is finished, the workpiece is broken and taken out when the baking temperature is reduced to 50 ℃.
The method for preparing the infrared filter for resisting the sunlight interference flame detection further comprises the following steps:
(6) measuring a transmittance spectrum of the optical filter at normal incidence by using a PE spectral two-point Fourier transform infrared spectrometer, and detecting whether the spectrum of the optical filter meets design indexes;
(7) and (3) placing the plated optical filter into an annealing furnace for annealing, wherein the annealing temperature is 180-220 ℃, preferably 200 ℃, the constant temperature time is 6-8 hours, and the temperature rising/reducing speed is 1 ℃/min.
By adopting the infrared filter for sunlight interference resistant flame detection and the preparation method thereof, the overlapping part of the solar blind spectral region and the flame emission spectral region is creatively utilized for designing the filter, namely, the central wavelength is 4.35 microns, and the bandwidth is 100 +/-10 nm; in addition, the idea of the design of the talon-symmetric film system is used for the film system structure.
In this specification, the invention has been described with reference to specific embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the invention. The specification and drawings are, accordingly, to be regarded in an illustrative rather than a restrictive sense.
Claims (10)
1. The infrared filter for detecting the flame and resisting the sunlight interference is characterized by comprising a base material, a main film system structure and a cut-off film system structure, wherein the main film system structure and the cut-off film system structure are respectively arranged on two sides of the base material;
the structure of the main membrane system is Sub/HLHLHLH (HLHLHLHLHLHLHLHLH) 2HLH2L/Air, wherein Sub represents a substrate material, Air represents Air, H represents a Ge membrane layer with a quarter-wavelength optical thickness, L represents a ZnS membrane layer with a quarter-wavelength optical thickness, and ^2 represents that a membrane stack in brackets is repeated twice, the design wavelength is 4350nm, and the bandwidth is 90 nm;
or, the main membrane system structure is as follows: Sub/HL 2H LHL 4H LHL2H LHL/Air, wherein, Sub represents a substrate material, Air represents Air, H is a Ge film layer with quarter-wavelength optical thickness, L is an SiO film layer with quarter-wavelength optical thickness, the design wavelength is 4350nm, and the bandwidth is 100 nm;
or, the main membrane system structure is as follows: Sub/HL 6H LH L HL 4H LH L HL 6H LH L/Air, wherein the Sub represents a substrate material, the Air represents Air, H is a Ge film layer with quarter-wavelength optical thickness, L is an SiO film layer with quarter-wavelength optical thickness, the design wavelength is 4350nm, and the bandwidth is 100 nm;
the structure of the cut-off film system is as follows: sub/0.38(0.5HL0.5H) ^ 60.66 (0.5HL0.5H) ^61.50(0.5LH0.5L) ^5/Air, wherein Sub represents a substrate material, Air represents Air, L is a SiO film layer of a quarter-wavelength optical thickness, H is a Ge film layer of a quarter-wavelength optical thickness, symbols ^6, ^5 respectively represent the number of times that the film stack in the corresponding bracket is repeated, and the design wavelength is 4350 nm;
the transmission center wavelength of the infrared filter is 4.35 mu m +/-20 nm, the transmission bandwidth is 100 +/-10 nm, the rest 1.5-8 mu m wave bands except the transmission band are completely cut off, and the average transmission rate of a cut-off region is less than 1%.
2. The infrared filter for detecting flame resistant to solar interference according to claim 1, wherein the base material is a single crystal silicon base material.
3. A method for preparing the infrared filter for flame detection against solar interference according to claim 1, comprising the steps of:
(1) putting the substrate material into a fixture, placing the fixture in a vacuum chamber of a film coating machine, and vacuumizing;
(2) baking the substrate material;
(3) ion bombarding said substrate material;
(4) coating the main film system structure layer by layer according to the film layer required by the main film system structure, and coating the cut-off film system structure layer by layer according to the film layer required by the cut-off film system structure;
(5) and (5) breaking the hollow part after the plating is finished, and taking the part.
4. The method of claim 3, wherein the step (1) is specifically as follows:
loading the base material of monocrystalline silicon piece with fineness meeting 40/20 standard into fixture, placing in vacuum chamber of film plating machine, and pumping to 1 × 10 of vacuum degree-3Pa。
5. The method of claim 3, wherein the step (2) is specifically as follows:
baking the substrate material at 170-190 deg.C, and keeping the constant temperature for more than 20 min.
6. The method of claim 3, wherein the step (3) is specifically as follows:
and bombarding the substrate material by using Hall ion source ions for 5-15 min, wherein the ion source uses high-purity argon, and the gas flow is 10-20 sccm.
7. The method of claim 3, wherein the step (4) is specifically as follows:
coating a main film system structure layer by layer according to a film layer required by the main film system structure, evaporating a Ge film material by adopting an electron beam evaporation process, and evaporating a ZnS or SiO film material by adopting a resistance evaporation process, wherein the film coating rate of the Ge film is 0.5-0.7 nm/s, the film coating rate of the ZnS film is 1.4-1.6 nm/s, and the film coating rate of the SiO film is 1.4-1.6 nm/s;
and coating a cut-off film system structure layer by layer according to the film layer required by the cut-off film system structure, evaporating the Ge film material by adopting an electron beam evaporation process, wherein the film coating rate of the Ge film is 0.5-0.7 nm/s, and evaporating the SiO film material by adopting a resistance evaporation process, wherein the film coating rate of the SiO film is 1.4-1.6 nm/s.
8. The method of claim 7, wherein the deposition process uses indirect light control and crystal control to control the film thickness and rate when the main film structure and the cut-off film structure are coated.
9. The method of claim 3, wherein the step (5) is specifically as follows:
and after the plating is finished, reducing the baking temperature to 40-60 ℃, and breaking and taking out the workpiece.
10. The method of claim 3, wherein the step of further comprises:
(6) and placing the mixture into an annealing furnace for annealing, wherein the annealing temperature is 180-220 ℃, the constant temperature time is 6-8 hours, and the temperature rising/reducing speed is 1 ℃/min.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111596396A (en) * | 2020-07-21 | 2020-08-28 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for chloroethylene gas detection, gas sensor and preparation method |
| CN114966911A (en) * | 2022-06-28 | 2022-08-30 | 无锡泓瑞航天科技有限公司 | Antireflective film group for silicon substrate and application thereof |
| CN115079314A (en) * | 2022-07-25 | 2022-09-20 | 无锡泓瑞航天科技有限公司 | Intermediate infrared spectrum optical window suitable for low-temperature and high-temperature environments |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1270042A (en) * | 1970-05-29 | 1972-04-12 | Standard Telephones Cables Ltd | Optical filters |
| JPH03210503A (en) * | 1990-01-14 | 1991-09-13 | Horiba Ltd | Multilayer film interference filter |
| JPH05313013A (en) * | 1992-05-09 | 1993-11-26 | Horiba Ltd | Multilayer film optical filter |
| CN2932335Y (en) * | 2006-04-04 | 2007-08-08 | 上海安誉智能科技有限公司 | Double-wavelength infrared flame detector |
| CN202275173U (en) * | 2012-03-12 | 2012-06-13 | 杭州麦乐克电子科技有限公司 | Infrared filter allowing transmission of 3650-nanometer long waves |
| CN202275174U (en) * | 2012-03-12 | 2012-06-13 | 杭州麦乐克电子科技有限公司 | 3400-nanometer band-pass infrared filter |
| CN202305861U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 3,000-5,000nm band-pass infrared filter |
| CN202472019U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 5,300-nano band pass infrared optical filter |
| CN202472020U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | Infrared optical filter with 4640-nanometer bandpass |
| CN202472024U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 5,020-nano band-pass infrared optical filter |
| CN104597540A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 4000 nm band-pass infrared filtering sensitive element |
| CN104597549A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 4600 nm band-pass infrared filtering sensitive element |
| CN204374467U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | The logical infrared filtering sensitive element of 4600nm band |
| CN204374466U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | The logical infrared filtering sensitive element of 4270nm band |
| CN105487154A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared imaging optical filter with a passing band of 3600 to 4950nm |
| CN106125182A (en) * | 2016-08-30 | 2016-11-16 | 镇江爱豪科思电子科技有限公司 | A kind of flame detecting infrared fileter and preparation method thereof |
| CN106291795A (en) * | 2016-08-30 | 2017-01-04 | 镇江爱豪科思电子科技有限公司 | A kind of CO gas detecting infrared fileter and preparation method thereof |
| CN110568538A (en) * | 2019-11-06 | 2019-12-13 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for large-field-of-view flame detection and preparation method thereof |
| CN110794490A (en) * | 2019-11-25 | 2020-02-14 | 中国科学院上海光学精密机械研究所 | Design and preparation method of medium-wave infrared antireflection film |
-
2020
- 2020-03-11 CN CN202010167457.7A patent/CN111323862A/en active Pending
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1270042A (en) * | 1970-05-29 | 1972-04-12 | Standard Telephones Cables Ltd | Optical filters |
| JPH03210503A (en) * | 1990-01-14 | 1991-09-13 | Horiba Ltd | Multilayer film interference filter |
| JPH05313013A (en) * | 1992-05-09 | 1993-11-26 | Horiba Ltd | Multilayer film optical filter |
| CN2932335Y (en) * | 2006-04-04 | 2007-08-08 | 上海安誉智能科技有限公司 | Double-wavelength infrared flame detector |
| CN202275173U (en) * | 2012-03-12 | 2012-06-13 | 杭州麦乐克电子科技有限公司 | Infrared filter allowing transmission of 3650-nanometer long waves |
| CN202275174U (en) * | 2012-03-12 | 2012-06-13 | 杭州麦乐克电子科技有限公司 | 3400-nanometer band-pass infrared filter |
| CN202305861U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | 3,000-5,000nm band-pass infrared filter |
| CN202472019U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 5,300-nano band pass infrared optical filter |
| CN202472020U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | Infrared optical filter with 4640-nanometer bandpass |
| CN202472024U (en) * | 2012-03-12 | 2012-10-03 | 杭州麦乐克电子科技有限公司 | 5,020-nano band-pass infrared optical filter |
| CN104597540A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 4000 nm band-pass infrared filtering sensitive element |
| CN104597549A (en) * | 2014-12-07 | 2015-05-06 | 杭州麦乐克电子科技有限公司 | 4600 nm band-pass infrared filtering sensitive element |
| CN204374467U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | The logical infrared filtering sensitive element of 4600nm band |
| CN204374466U (en) * | 2014-12-07 | 2015-06-03 | 杭州麦乐克电子科技有限公司 | The logical infrared filtering sensitive element of 4270nm band |
| CN105487154A (en) * | 2015-12-30 | 2016-04-13 | 杭州麦乐克电子科技有限公司 | Infrared imaging optical filter with a passing band of 3600 to 4950nm |
| CN106125182A (en) * | 2016-08-30 | 2016-11-16 | 镇江爱豪科思电子科技有限公司 | A kind of flame detecting infrared fileter and preparation method thereof |
| CN106291795A (en) * | 2016-08-30 | 2017-01-04 | 镇江爱豪科思电子科技有限公司 | A kind of CO gas detecting infrared fileter and preparation method thereof |
| CN110568538A (en) * | 2019-11-06 | 2019-12-13 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for large-field-of-view flame detection and preparation method thereof |
| CN110794490A (en) * | 2019-11-25 | 2020-02-14 | 中国科学院上海光学精密机械研究所 | Design and preparation method of medium-wave infrared antireflection film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111596396A (en) * | 2020-07-21 | 2020-08-28 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for chloroethylene gas detection, gas sensor and preparation method |
| CN114966911A (en) * | 2022-06-28 | 2022-08-30 | 无锡泓瑞航天科技有限公司 | Antireflective film group for silicon substrate and application thereof |
| CN114966911B (en) * | 2022-06-28 | 2024-04-02 | 无锡泓瑞航天科技有限公司 | Anti-reflection film group for silicon substrate and application thereof |
| CN115079314A (en) * | 2022-07-25 | 2022-09-20 | 无锡泓瑞航天科技有限公司 | Intermediate infrared spectrum optical window suitable for low-temperature and high-temperature environments |
| CN115079314B (en) * | 2022-07-25 | 2024-01-16 | 无锡泓瑞航天科技有限公司 | Mid-infrared spectrum optical window suitable for low-temperature and high-temperature environments |
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Application publication date: 20200623 |