CN104597540A - 4000 nm band-pass infrared filtering sensitive element - Google Patents
4000 nm band-pass infrared filtering sensitive element Download PDFInfo
- Publication number
- CN104597540A CN104597540A CN201410733432.3A CN201410733432A CN104597540A CN 104597540 A CN104597540 A CN 104597540A CN 201410733432 A CN201410733432 A CN 201410733432A CN 104597540 A CN104597540 A CN 104597540A
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- layer
- thickness
- sio
- band
- sensitive element
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- 238000001914 filtration Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 4
- 238000009501 film coating Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Abstract
The invention discloses a 4000 nm band-pass infrared filtering sensitive element. The 4000 nm band-pass infrared filtering sensitive element comprises a substrate taking Si as raw material, a first film coating layer made of Ge and SiO and a second film coating layer made of Ge and SiO; the substrate is arranged between the first film coating layer and the second film coating layer. The central wavelength of the 4000 nm band-pass infrared filtering sensitive element obtained by the invention is 4000+/-40 nm; during the medical infrared gas detection analysis process, the 4700 nm band-pass infrared filtering sensitive element can greatly improve the signal-to-noise ratio and increase testing accuracy, and is applicable to popularize and use on a large scale. Tp of peak transmittance of the filtering sensitive element is not less than 70%, the band width is equal to 120+/-20 nm, 400-5500 nm (except for passing band), and Tavg is less than 0.1%.
Description
Technical field
The present invention relates to medical infrared gas detection optical filtering sensitive element, the logical infrared filtering sensitive element of especially a kind of 4000nm band.
Background technology
Infrared filtering sensitive element filters, cut-off visible ray allows to pass through infrared ray simultaneously.Ultrared wavelength penetrates any object easily, and namely infrared ray can not reflect through object.Utilize this characteristic ultrared, only allow the infrared ray of long wavelength pass through, the ultraviolet of filtering short wavelength and visible ray.Be applied to a lot of field, at present the signal to noise ratio (S/N ratio) of rate and cut-off region be through for the optical filtering sensitive element Problems existing used in medical infrared gas detection process not high, high-precision measurement requirement can not be met.
Summary of the invention
The object of the invention is the deficiency in order to solve above-mentioned technology and the logical infrared filtering sensitive element of 4000nm band that a kind of measuring accuracy is high, greatly can improve signal to noise ratio (S/N ratio) is provided.
In order to achieve the above object, the logical infrared filtering sensitive element of a kind of 4000nm band designed by the present invention, comprising with Si is raw-material substrate, with Ge, SiO is the first filming layer and with Ge, SiO is the second film plating layer, and described substrate is located between the first filming layer and the second film plating layer, it is characterized in that described the first filming layer is arranged in order the Ge layer including 162nm thickness from inside to outside, the SiO layer of 220nm thickness, the Ge layer of 88nm thickness, the SiO layer of 312nm thickness, the Ge layer of 70nm thickness, the SiO layer of 198nm thickness, the Ge layer of 270nm thickness, the SiO layer of 313nm thickness, the Ge layer of 114nm thickness, the SiO layer of 330nm thickness, the Ge layer of 133nm thickness, the SiO layer of 140nm thickness, the Ge layer of 93nm thickness, the SiO layer of 397nm thickness, the Ge layer of 176nm thickness, the SiO layer of 272nm thickness, the Ge layer of 144nm thickness, the SiO layer of 552nm thickness, the Ge layer of 201nm thickness, the SiO layer of 272nm thickness, the Ge layer of 123nm thickness, the SiO layer of 419nm thickness, the Ge layer of 281nm thickness, the SiO layer of 233nm thickness, the Ge layer of 59nm thickness, the SiO layer of 395nm thickness, the Ge layer of 456nm thickness, the SiO layer of 594nm thickness, the Ge layer of 434nm thickness, the SiO layer of 376nm thickness, the second described film plating layer is arranged in order the Ge layer, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 2248nm thickness, the Ge layer of 243nm thickness, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 2248nm thickness, the Ge layer of 223nm thickness, the SiO layer of 150nm thickness that include 243nm thickness from inside to outside.
The thickness that above-mentioned each material is corresponding, its permission changes in margin tolerance, and the scope of its change belongs to the scope of this patent protection, is identity relation.The tolerance of usual thickness is at about 10nm.
The logical infrared filtering sensitive element of a kind of 4000nm band that the present invention obtains, its centre wavelength 4000 ± 40nm, it, in medical infrared gas detection analytic process, can improve signal to noise ratio (S/N ratio) greatly, improves accurate testing degree, is suitable for promoting on a large scale and using.Peak transmittance Tp >=70% of this optical filtering sensitive element, bandwidth=120 ± 20nm, 400 ~ 5500 nm(are except passband), Tavg<0.1%.
Accompanying drawing explanation
Fig. 1 is embodiment one-piece construction schematic diagram.
Fig. 2 is the infrared spectrum transmitance measured curve figure that embodiment provides.
In figure: the first filming layer 1, substrate 2, second film plating layer 3.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1.
As depicted in figs. 1 and 2, the logical infrared filtering sensitive element of a kind of 4000nm band that the present embodiment describes, comprising with Si is raw-material substrate 2, with Ge, SiO is the first filming layer 1 and with Ge, SiO is the second film plating layer 3, and described substrate 2 is located between the first filming layer 1 and the second film plating layer 3, and described the first filming layer 1 is arranged in order the Ge layer including 162nm thickness from inside to outside, the SiO layer of 220nm thickness, the Ge layer of 88nm thickness, the SiO layer of 312nm thickness, the Ge layer of 70nm thickness, the SiO layer of 198nm thickness, the Ge layer of 270nm thickness, the SiO layer of 313nm thickness, the Ge layer of 114nm thickness, the SiO layer of 330nm thickness, the Ge layer of 133nm thickness, the SiO layer of 140nm thickness, the Ge layer of 93nm thickness, the SiO layer of 397nm thickness, the Ge layer of 176nm thickness, the SiO layer of 272nm thickness, the Ge layer of 144nm thickness, the SiO layer of 552nm thickness, the Ge layer of 201nm thickness, the SiO layer of 272nm thickness, the Ge layer of 123nm thickness, the SiO layer of 419nm thickness, the Ge layer of 281nm thickness, the SiO layer of 233nm thickness, the Ge layer of 59nm thickness, the SiO layer of 395nm thickness, the Ge layer of 456nm thickness, the SiO layer of 594nm thickness, the Ge layer of 434nm thickness, the SiO layer of 376nm thickness, described the second film plating layer (3) is arranged in order the Ge layer, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 2248nm thickness, the Ge layer of 243nm thickness, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 2248nm thickness, the Ge layer of 223nm thickness, the SiO layer of 150nm thickness that include 243nm thickness from inside to outside.
Claims (1)
1. the logical infrared filtering sensitive element of 4000nm band, comprising with Si is raw-material substrate (2), with Ge, SiO is the first filming layer (1) and with Ge, SiO is the second film plating layer (3), and described substrate (2) is located between the first filming layer (1) and the second film plating layer (3), it is characterized in that described the first filming layer (1) is arranged in order the Ge layer including 162nm thickness from inside to outside, the SiO layer of 220nm thickness, the Ge layer of 88nm thickness, the SiO layer of 312nm thickness, the Ge layer of 70nm thickness, the SiO layer of 198nm thickness, the Ge layer of 270nm thickness, the SiO layer of 313nm thickness, the Ge layer of 114nm thickness, the SiO layer of 330nm thickness, the Ge layer of 133nm thickness, the SiO layer of 140nm thickness, the Ge layer of 93nm thickness, the SiO layer of 397nm thickness, the Ge layer of 176nm thickness, the SiO layer of 272nm thickness, the Ge layer of 144nm thickness, the SiO layer of 552nm thickness, the Ge layer of 201nm thickness, the SiO layer of 272nm thickness, the Ge layer of 123nm thickness, the SiO layer of 419nm thickness, the Ge layer of 281nm thickness, the SiO layer of 233nm thickness, the Ge layer of 59nm thickness, the SiO layer of 395nm thickness, the Ge layer of 456nm thickness, the SiO layer of 594nm thickness, the Ge layer of 434nm thickness, the SiO layer of 376nm thickness, described the second film plating layer (3) is arranged in order the Ge layer, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 2248nm thickness, the Ge layer of 243nm thickness, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 562nm thickness, the Ge layer of 243nm thickness, the SiO layer of 2248nm thickness, the Ge layer of 223nm thickness, the SiO layer of 150nm thickness that include 243nm thickness from inside to outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410733432.3A CN104597540A (en) | 2014-12-07 | 2014-12-07 | 4000 nm band-pass infrared filtering sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410733432.3A CN104597540A (en) | 2014-12-07 | 2014-12-07 | 4000 nm band-pass infrared filtering sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104597540A true CN104597540A (en) | 2015-05-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410733432.3A Pending CN104597540A (en) | 2014-12-07 | 2014-12-07 | 4000 nm band-pass infrared filtering sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104597540A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323862A (en) * | 2020-03-11 | 2020-06-23 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for sunlight interference resistance flame detection and preparation method thereof |
-
2014
- 2014-12-07 CN CN201410733432.3A patent/CN104597540A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111323862A (en) * | 2020-03-11 | 2020-06-23 | 上海翼捷工业安全设备股份有限公司 | Infrared filter for sunlight interference resistance flame detection and preparation method thereof |
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Address after: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant after: Hangzhou Mai peak Polytron Technologies Inc Address before: Xingguo Qianjiang Economic Development Zone 503-2-101 311188 Hangzhou Road, Zhejiang Province Applicant before: Multi IR Optoelectronics Co., Ltd. |
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| COR | Change of bibliographic data | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150506 |
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| RJ01 | Rejection of invention patent application after publication |